| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Mount | Mounting Type | Package / Case | Surface Mount | Number of Pins | Supplier Device Package | Base Product Number | Frequency(Max) | Memory Types | Mfr | Package | Product Status | Operating Temperature | Packaging | Published | Series | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | Technology | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Supply Voltage | Terminal Pitch | Reach Compliance Code | Frequency | Time@Peak Reflow Temperature-Max (s) | Pin Count | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Interface | Number of Circuits | Max Supply Voltage | Min Supply Voltage | Memory Size | Number of Ports | Nominal Supply Current | Max Supply Current | Supply Current-Max | Access Time | Memory Format | Memory Interface | Data Bus Width | Organization | Output Characteristics | Memory Width | Write Cycle Time - Word, Page | Address Bus Width | Density | Standby Current-Max | Memory Density | Access Time (Max) | I/O Type | Sync/Async | Word Size | Standby Voltage-Min | Output Enable | Memory Organization | Height Seated (Max) | Length | Width | Thickness | Radiation Hardening | RoHS Status | Lead Free |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. Тип70T3509MS133BPGIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM 1024Kx36 STD-PWR 2.5V DUAL PORT RAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 14 Weeks | Surface Mount | - | BGA | - | 256 | - | - | 133MHz | RAM, SDR, SRAM | - | - | - | - | Bulk | 2009 | - | e1 | yes | Active | 3 (168 Hours) | 256 | - | Tin/Silver/Copper (Sn/Ag/Cu) | 85°C | -40°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | - | - | BOTTOM | BALL | 260 | 1 | 2.5V | 1mm | - | 133MHz | 30 | 256 | - | 2.5V | - | - | INDUSTRIAL | - | Parallel | - | 2.6V | 2.4V | 4.5MB | 2 | 1.37A | - | - | 4.2 ns | - | - | - | 1MX36 | 3-STATE | - | - | 40b | 36 Mb | 0.08A | - | - | COMMON | Synchronous | 36b | - | - | - | 1.7mm | 17mm | 17mm | 1.76mm | No | RoHS Compliant | Lead Free | ||
| 70T3509MS133BPGI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71024S12TYG8Anlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Single 5V 1M-Bit 128K x 8 12ns 32-Pin SOJ T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | - | - | - | 32 | - | - | - | RAM, SDR, SRAM - Asynchronous | - | - | - | - | - | 2013 | - | e3 | yes | Active | 3 (168 Hours) | 32 | - | Matte Tin (Sn) - annealed | 70°C | 0°C | - | - | - | DUAL | J BEND | 260 | 1 | 5V | - | - | - | - | 32 | - | 5V | - | 5V | COMMERCIAL | - | Parallel | - | 5.5V | 4.5V | 128kB | 1 | 160mA | - | - | 12 ns | - | - | - | - | 3-STATE | - | - | 17b | 1 Mb | - | - | - | COMMON | Asynchronous | 8b | - | - | - | 3.76mm | 21.95mm | 7.6mm | 2.67mm | No | RoHS Compliant | Lead Free | ||
| 71024S12TYG8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V3556S166PFGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 3.3V 4.5M-Bit 128K x 36 3.5ns 100-Pin TQFP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | Surface Mount | - | TQFP | - | 100 | - | - | 166MHz | RAM, SDR, SRAM | - | - | - | - | - | 2006 | - | e3 | yes | Active | 3 (168 Hours) | 100 | - | Matte Tin (Sn) - annealed | 70°C | 0°C | - | - | - | QUAD | GULL WING | 260 | 1 | 3.3V | 0.65mm | - | 166MHz | 30 | 100 | - | 3.3V | - | - | COMMERCIAL | - | Parallel | - | 3.465V | 3.135V | 512kB | 1 | 350mA | - | - | 3.5 ns | - | - | - | - | 3-STATE | - | - | 17b | 4.5 Mb | 0.04A | - | - | COMMON | Synchronous | 36b | - | - | - | - | 20mm | 14mm | 1.4mm | No | RoHS Compliant | Lead Free | ||
| 71V3556S166PFG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V67903S75PFGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 3.3V 9M-Bit 512K x 18 7.5ns 100-Pin TQFP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Surface Mount | - | TQFP | - | 100 | - | - | 117MHz | RAM, SDR, SRAM | - | - | - | - | - | 2004 | - | e3 | yes | Active | 3 (168 Hours) | 100 | - | Matte Tin (Sn) - annealed | 70°C | 0°C | FLOW-THROUGH ARCHITECTURE | - | - | QUAD | GULL WING | 260 | 1 | 3.3V | 0.65mm | - | 117MHz | 30 | 100 | - | 3.3V | - | - | COMMERCIAL | - | Parallel | - | 3.465V | 3.135V | 1.1MB | 1 | 265mA | - | - | 7.5 ns | - | - | - | - | 3-STATE | - | - | 19b | 9 Mb | 0.05A | - | - | COMMON | Synchronous | 18b | - | - | - | - | 20mm | 14mm | 1.4mm | No | RoHS Compliant | Lead Free | ||
| 71V67903S75PFG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V65603S100PFGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 3.3V 9M-Bit 256K x 36 5ns 100-Pin TQFP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Surface Mount | - | TQFP | - | 100 | - | - | 100MHz | RAM, SDR, SRAM | - | - | - | - | - | 2005 | - | e3 | yes | Active | 3 (168 Hours) | 100 | - | Matte Tin (Sn) - annealed | 70°C | 0°C | BURST COUNTER | - | - | QUAD | GULL WING | 260 | 1 | 3.3V | 0.65mm | - | 100MHz | 30 | 100 | Not Qualified | 3.3V | - | - | COMMERCIAL | - | Parallel | - | 3.465V | 3.135V | 1.1MB | 1 | 250mA | - | - | 10 ns | - | - | - | 256KX36 | 3-STATE | - | - | 18b | 9 Mb | 0.04A | - | - | COMMON | Synchronous | 36b | - | - | - | - | 20mm | 14mm | 1.4mm | - | RoHS Compliant | Lead Free | ||
| 71V65603S100PFG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V124SA12YGIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM 128Kx8 ASYNCHRONOUS 3.3V STATIC RAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | - | - | - | 32 | - | - | - | RAM, SDR, SRAM - Asynchronous | - | - | - | - | - | 2013 | - | e3 | yes | Active | 3 (168 Hours) | 32 | - | Matte Tin (Sn) - annealed | 85°C | -40°C | - | - | - | DUAL | J BEND | 260 | 1 | 3.3V | - | - | - | - | 32 | - | 3.3V | - | - | INDUSTRIAL | - | Parallel | - | 3.6V | 3V | 128kB | 1 | 140mA | 140mA | - | 12 ns | - | - | - | - | 3-STATE | - | - | 17b | 1 Mb | - | - | - | COMMON | Asynchronous | 8b | 3V | - | - | 3.683mm | 20.9mm | 10.2mm | 2.2mm | No | RoHS Compliant | Lead Free | ||
| 71V124SA12YGI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V25761S200PFGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 3.3V 4.5M-Bit 128K x 36 3.1ns 100-Pin TQFP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | - | TQFP | YES | 100 | - | - | 200MHz | RAM, SDR, SRAM | - | - | - | - | - | 2009 | - | e3 | yes | Active | 3 (168 Hours) | 100 | - | Matte Tin (Sn) - annealed | 70°C | 0°C | PIPELINED ARCHITECTURE | - | - | QUAD | GULL WING | 260 | 1 | 3.3V | 0.65mm | - | 200MHz | 30 | 100 | - | 3.3V | - | - | COMMERCIAL | - | Parallel | - | 3.465V | 3.135V | 512kB | 1 | - | - | 0.36mA | 3.1 ns | - | - | - | - | 3-STATE | - | - | 17b | 4.5 Mb | 0.03A | - | - | COMMON | - | - | - | - | - | - | 20mm | 14mm | 1.4mm | No | RoHS Compliant | Lead Free | ||
| 71V25761S200PFG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71256L35YGI8Anlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Single 5V 256K-Bit 32K x 8 35ns 28-Pin SOJ T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | - | - | - | 28 | - | - | - | RAM, SDR, SRAM - Asynchronous | - | - | - | - | Tape & Reel | 2011 | - | e3 | yes | Active | 3 (168 Hours) | 28 | EAR99 | Matte Tin (Sn) | 85°C | -40°C | - | - | - | DUAL | J BEND | 260 | 1 | 5V | - | - | - | - | 28 | - | 5V | - | 5V | INDUSTRIAL | - | Parallel | - | 5.5V | 4.5V | 32kB | 1 | 115mA | - | - | 35 ns | - | - | - | 32KX8 | 3-STATE | - | - | 15b | 256 kb | - | - | - | COMMON | Asynchronous | 8b | 2V | - | - | 3.556mm | 17.9mm | 7.6mm | 2.67mm | No | RoHS Compliant | Lead Free | ||
| 71256L35YGI8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип70V657S10BFGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Dual 3.3V 1.125M-Bit 32K x 36 10ns 208-Pin CABGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | - | - | - | 208 | - | - | - | RAM, SDR, SRAM | - | - | - | - | - | 2009 | - | e1 | yes | Active | 3 (168 Hours) | 208 | - | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | - | - | - | BOTTOM | BALL | 260 | 1 | 3.3V | 0.8mm | - | - | 30 | 208 | - | 3.3V | - | - | COMMERCIAL | - | Parallel | - | 3.45V | 3.15V | 128kB | 2 | 500mA | - | - | 10 ns | - | - | - | - | 3-STATE | - | - | 30b | 1.1 Mb | 0.015A | - | - | COMMON | Asynchronous | 36b | - | - | - | - | 15mm | 15mm | 1.4mm | No | RoHS Compliant | Lead Free | ||
| 70V657S10BFG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V65803S133BQGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 3.3V 9M-Bit 512K x 18 4.2ns 165-Pin CABGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | - | - | - | YES | 165 | - | - | 133MHz | RAM, SDR, SRAM | - | - | - | - | - | 2005 | - | e1 | yes | Active | 3 (168 Hours) | 165 | - | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | BURST COUNTER | - | - | BOTTOM | BALL | 260 | 1 | 3.3V | - | - | 133MHz | 30 | 165 | - | 3.3V | - | - | COMMERCIAL | - | Parallel | - | 3.465V | 3.135V | 1.1MB | 1 | - | - | 0.3mA | 7.5 ns | - | - | - | - | 3-STATE | - | - | 19b | 9 Mb | 0.04A | - | - | COMMON | - | - | - | - | - | - | 15mm | 13mm | 1.2mm | No | RoHS Compliant | Lead Free | ||
| 71V65803S133BQG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V67903S75PFGIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 3.3V 9M-Bit 512K x 18 7.5ns 100-Pin TQFP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Surface Mount | - | TQFP | - | 100 | - | - | 117MHz | RAM, SDR, SRAM | - | - | - | - | - | 2004 | - | e3 | yes | Active | 3 (168 Hours) | 100 | - | Matte Tin (Sn) - annealed | 85°C | -40°C | FLOW-THROUGH ARCHITECTURE | - | - | QUAD | GULL WING | 260 | 1 | 3.3V | 0.65mm | - | 117MHz | 30 | 100 | - | 3.3V | - | - | INDUSTRIAL | - | Parallel | - | 3.465V | 3.135V | 1.1MB | 1 | 285mA | - | - | 7.5 ns | - | - | - | - | 3-STATE | - | - | 19b | 9 Mb | 0.07A | - | - | COMMON | Synchronous | 18b | - | - | - | - | 20mm | 14mm | 1.4mm | No | RoHS Compliant | Lead Free | ||
| 71V67903S75PFGI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIDT71024S12YAnlielectronics Тип | Integrated Device Technology (IDT) |
IC SRAM 1MBIT 12NS 32SOJ
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | YES | 32 | - | - | - | RAM, SRAM - Asynchronous | - | - | - | - | - | 1997 | - | e0 | no | - | 3 (168 Hours) | 32 | 3A991.B.2.B | Tin/Lead (Sn85Pb15) | 70°C | 0°C | - | - | - | DUAL | J BEND | 225 | 1 | 5V | 1.27mm | not_compliant | - | 30 | 32 | Not Qualified | - | 5.5V | 5V | COMMERCIAL | 4.5V | Parallel | - | - | - | - | 1 | - | - | 0.16mA | - | - | - | - | 128KX8 | 3-STATE | 8 | - | - | - | 0.01A | 1048576 bit | 12 ns | COMMON | - | - | 4.5V | YES | - | 3.683mm | 20.96mm | 10.16mm | - | - | Non-RoHS Compliant | - | ||
| IDT71024S12Y | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V2546S100PFGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 3.3V 4.5M-Bit 128K x 36 5ns 100-Pin TQFP Tray
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | Surface Mount | - | TQFP | - | 100 | - | - | 100MHz | RAM, SDR, SRAM | - | - | - | - | - | 2009 | - | e3 | yes | Active | 3 (168 Hours) | 100 | - | Matte Tin (Sn) - annealed | 70°C | 0°C | PIPELINED ARCHITECTURE | - | - | QUAD | GULL WING | 260 | 1 | 3.3V | 0.65mm | - | 100MHz | 30 | 100 | - | 3.3V | - | - | COMMERCIAL | - | Parallel | - | 3.465V | 3.135V | 512kB | 1 | 250mA | - | - | 5 ns | - | - | - | - | 3-STATE | - | - | 17b | 4.5 Mb | 0.04A | - | - | COMMON | Synchronous | 36b | - | - | - | - | 20mm | 14mm | 1.4mm | No | RoHS Compliant | Lead Free | ||
| 71V2546S100PFG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип6116LA20SOGIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Single 5V 16K-Bit 2K x 8 20ns 24-Pin SOIC Tube/Tray
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | - | SOIC | - | 24 | - | - | - | RAM, SDR, SRAM - Asynchronous | - | - | - | - | - | 2013 | - | e3 | yes | Active | 1 (Unlimited) | 24 | EAR99 | Matte Tin (Sn) - annealed | 85°C | -40°C | - | - | - | DUAL | GULL WING | 260 | 1 | 5V | - | - | - | 30 | 24 | - | 5V | - | 5V | INDUSTRIAL | - | Parallel | - | 5.5V | 4.5V | 2kB | 1 | 95mA | - | - | 20 ns | - | - | - | 2KX8 | 3-STATE | - | - | 11b | 16 kb | 0.00003A | - | - | COMMON | Asynchronous | 8b | 2V | - | - | - | 15.4mm | 7.6mm | 2.34mm | No | RoHS Compliant | Lead Free | ||
| 6116LA20SOGI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71342LA25PFGIAnlielectronics Тип | Integrated Device Technology (IDT) |
FIFO 5V DUAL-PORT RAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | - | - | TQFP | YES | 64 | - | - | - | RAM, SRAM | - | - | - | - | Bulk | 2009 | - | - | - | - | - | 64 | EAR99 | - | 85°C | -40°C | - | - | - | QUAD | GULL WING | - | 1 | 5V | 0.8mm | - | - | - | - | - | 5V | - | 5V | INDUSTRIAL | - | Parallel | 2 | 5.5V | 4.5V | 4kB | 2 | - | - | - | 25 ns | - | - | 8b | 4KX8 | 3-STATE | 8 | - | 24b | 32 kb | 0.0015A | - | - | COMMON | - | - | 2V | - | - | - | - | - | - | No | RoHS Compliant | - | ||
| 71342LA25PFGI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V016SA15PHGI8Anlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Single 3.3V 1M-Bit 64K x 16 15ns 44-Pin TSOP-II T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | Surface Mount | - | TSOP | - | 44 | - | - | - | RAM, SDR, SRAM - Asynchronous | - | - | - | - | Tape & Reel | 2011 | - | e3 | yes | Active | 3 (168 Hours) | 44 | - | Matte Tin (Sn) - annealed | 85°C | -40°C | - | - | - | DUAL | GULL WING | 260 | 1 | 3.3V | 0.8mm | - | - | 30 | 44 | - | 3.3V | - | - | INDUSTRIAL | - | Parallel | - | 3.6V | 3V | 128kB | 1 | 130mA | - | - | 15 ns | - | - | - | - | 3-STATE | - | - | 16b | 1 Mb | - | - | - | COMMON | Asynchronous | 16b | 3V | - | - | - | 18.41mm | 10.16mm | 1mm | No | RoHS Compliant | Lead Free | ||
| 71V016SA15PHGI8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V416S15PHAnlielectronics Тип | Integrated Device Technology |
Standard SRAM, 256KX16, 15ns, CMOS, PDSO44
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | Surface Mount | 44-TSOP (0.400, 10.16mm Width) | - | - | 44-TSOP II | 71V416S | - | Volatile | IDT, Integrated Device Technology Inc | Bulk | Active | 0°C ~ 70°C (TA) | - | - | - | - | - | - | - | - | - | - | - | - | - | SRAM - Asynchronous | 3V ~ 3.6V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 4Mbit | - | - | - | - | 15 ns | SRAM | Parallel | - | - | - | - | 15ns | - | - | - | - | - | - | - | - | - | - | 256K x 16 | - | - | - | - | - | - | - | ||
| 71V416S15PH | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71T75602S166PFGIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 2.5V 18M-Bit 512K x 36 3.5ns 100-Pin TQFP Tube/Tray
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Surface Mount | - | TQFP | - | 100 | - | - | 166MHz | RAM, SDR, SRAM | - | - | - | - | - | 2012 | - | e3 | yes | Active | 3 (168 Hours) | 100 | - | Matte Tin (Sn) - annealed | 85°C | -40°C | PIPELINED ARCHITECTURE | - | - | QUAD | GULL WING | 260 | 1 | 2.5V | 0.65mm | - | 166MHz | 30 | 100 | - | 2.5V | - | - | INDUSTRIAL | - | Parallel | - | 2.625V | 2.375V | 2.3MB | 1 | 265mA | - | - | 3.5 ns | - | - | - | - | 3-STATE | - | - | 19b | 18 Mb | 0.06A | - | - | COMMON | Synchronous | 36b | 2.38V | - | - | - | 20mm | 14mm | 1.4mm | No | RoHS Compliant | Lead Free | ||
| 71T75602S166PFGI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип7134LA25JGIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Dual 5V 32K-Bit 4K x 8 25ns 52-Pin PLCC Tube
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | - | PLCC | - | 52 | - | - | - | RAM, SDR, SRAM | - | - | - | - | - | 2013 | - | e3 | yes | Active | 3 (168 Hours) | 52 | EAR99 | Matte Tin (Sn) - annealed | 85°C | -40°C | - | - | - | QUAD | J BEND | 260 | 1 | 5V | - | - | - | - | 52 | - | 5V | - | 5V | INDUSTRIAL | - | Parallel | - | 5.5V | 4.5V | 4kB | 2 | 260mA | - | - | 25 ns | - | - | - | 4KX8 | 3-STATE | - | - | 24b | 32 kb | 0.004A | - | - | COMMON | Asynchronous | 8b | 2V | - | - | 4.57mm | 19mm | 19mm | 3.63mm | No | RoHS Compliant | Lead Free | ||
| 7134LA25JGI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V416S12YGIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 12ns 44-Pin SOJ Tube/Tray
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | Surface Mount | - | - | - | 44 | - | - | - | RAM, SDR, SRAM - Asynchronous | - | - | - | - | - | 2005 | - | e3 | yes | Active | 3 (168 Hours) | 44 | - | Matte Tin (Sn) - annealed | 85°C | -40°C | - | - | - | DUAL | J BEND | 260 | 1 | 3.3V | - | - | - | - | 44 | - | 3.3V | - | - | INDUSTRIAL | - | Parallel | - | 3.6V | 3V | 512kB | 1 | 180mA | - | - | 12 ns | - | - | - | - | 3-STATE | - | - | 18b | 4 Mb | 0.02A | - | - | COMMON | Asynchronous | 16b | 3V | - | - | 3.683mm | 28.6mm | 10.2mm | 2.9mm | No | RoHS Compliant | Lead Free | ||
| 71V416S12YGI |
Индекс :
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