| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Mount | Package / Case | Surface Mount | Number of Pins | Frequency(Max) | Memory Types | Packaging | Published | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Supply Voltage | Terminal Pitch | Frequency | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Interface | Max Supply Voltage | Min Supply Voltage | Memory Size | Number of Ports | Nominal Supply Current | Operating Mode | Max Supply Current | Supply Current-Max | Access Time | Organization | Output Characteristics | Memory Width | Address Bus Width | Density | Standby Current-Max | Memory Density | Access Time (Max) | I/O Type | Sync/Async | Word Size | Standby Voltage-Min | Output Enable | Height Seated (Max) | Length | Width | Thickness | Radiation Hardening | RoHS Status | Lead Free |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. Тип71T75602S166PFGIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 2.5V 18M-Bit 512K x 36 3.5ns 100-Pin TQFP Tube/Tray
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Surface Mount | TQFP | - | 100 | 166MHz | RAM, SDR, SRAM | - | 2012 | e3 | yes | Active | 3 (168 Hours) | 100 | - | Matte Tin (Sn) - annealed | 85°C | -40°C | PIPELINED ARCHITECTURE | - | QUAD | GULL WING | 260 | 1 | 2.5V | 0.65mm | 166MHz | 30 | 100 | - | - | 2.5V | - | - | INDUSTRIAL | - | Parallel | 2.625V | 2.375V | 2.3MB | 1 | 265mA | - | - | - | 3.5 ns | - | 3-STATE | - | 19b | 18 Mb | 0.06A | - | - | COMMON | Synchronous | 36b | 2.38V | - | - | 20mm | 14mm | 1.4mm | No | RoHS Compliant | Lead Free | ||
| 71T75602S166PFGI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V35761SA166BQGIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 3.3V 4.5M-Bit 128K x 36 3.5ns 165-Pin FBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 11 Weeks | Surface Mount | FBGA | - | 165 | 166MHz | RAM, SDR, SRAM | - | 2009 | e1 | yes | Active | 3 (168 Hours) | 165 | - | Tin/Silver/Copper (Sn/Ag/Cu) | 85°C | -40°C | PIPELINED ARCHITECTURE | - | BOTTOM | BALL | 260 | 1 | 3.3V | - | 166MHz | 30 | 165 | - | - | 3.3V | - | - | INDUSTRIAL | - | Parallel | 3.465V | 3.135V | 512kB | 1 | 330mA | - | - | - | 3.5 ns | - | 3-STATE | - | 17b | 4.5 Mb | 0.035A | - | - | COMMON | Synchronous | 36b | - | - | - | 15mm | 13mm | 1.2mm | No | RoHS Compliant | Lead Free | ||
| 71V35761SA166BQGI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V416S12YGIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 12ns 44-Pin SOJ Tube/Tray
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | Surface Mount | - | - | 44 | - | RAM, SDR, SRAM - Asynchronous | - | 2005 | e3 | yes | Active | 3 (168 Hours) | 44 | - | Matte Tin (Sn) - annealed | 85°C | -40°C | - | - | DUAL | J BEND | 260 | 1 | 3.3V | - | - | - | 44 | - | - | 3.3V | - | - | INDUSTRIAL | - | Parallel | 3.6V | 3V | 512kB | 1 | 180mA | - | - | - | 12 ns | - | 3-STATE | - | 18b | 4 Mb | 0.02A | - | - | COMMON | Asynchronous | 16b | 3V | - | 3.683mm | 28.6mm | 10.2mm | 2.9mm | No | RoHS Compliant | Lead Free | ||
| 71V416S12YGI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71321SA25JGAnlielectronics Тип | Integrated Device Technology (IDT) |
IC SRAM 16KBIT 25NS 52PLCC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | - | LCC | YES | - | - | RAM, SRAM | - | 2008 | e3 | yes | - | 1 (Unlimited) | 52 | EAR99 | Matte Tin (Sn) - annealed | 70°C | 0°C | AUTOMATIC POWER DOWN | 8542.32.00.41 | QUAD | J BEND | 260 | 1 | 5V | 1.27mm | - | 30 | 52 | S-PQCC-J52 | Not Qualified | - | 5.5V | 5V | COMMERCIAL | 4.5V | Parallel | - | - | - | 2 | - | ASYNCHRONOUS | - | 0.22mA | - | 2KX8 | 3-STATE | 8 | - | - | 0.015A | 16384 bit | 25 ns | COMMON | - | - | 4.5V | - | 4.572mm | 19.1262mm | 19.1262mm | - | - | RoHS Compliant | - | ||
| 71321SA25JG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIDT71256SA15YAnlielectronics Тип | Integrated Device Technology (IDT) |
IC SRAM 256KBIT 15NS 28SOJ
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Surface Mount | - | - | 28 | - | RAM, SRAM - Asynchronous | - | 1997 | e0 | no | - | 3 (168 Hours) | 28 | EAR99 | - | 70°C | 0°C | - | - | DUAL | J BEND | 225 | 1 | 5V | - | - | 20 | 28 | - | Not Qualified | 5V | - | 5V | COMMERCIAL | - | Parallel | 5.5V | 4.5V | - | 1 | 150mA | - | - | - | 15 ns | 32KX8 | 3-STATE | 8 | 15b | 256 kb | - | - | - | COMMON | Asynchronous | 8b | - | YES | 3.556mm | - | - | - | - | RoHS Compliant | - | ||
| IDT71256SA15Y | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип7132LA100PDGAnlielectronics Тип | Integrated Device Technology (IDT) |
IC SRAM 16KBIT 100NS 48DIP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | - | DIP | NO | 48 | - | RAM, SRAM | - | 2010 | e3 | yes | Active | 1 (Unlimited) | 48 | - | Matte Tin (Sn) | 70°C | 0°C | - | 8542.32.00.41 | DUAL | THROUGH-HOLE | 260 | 1 | 5V | - | - | NOT SPECIFIED | 48 | - | - | - | 5.5V | - | COMMERCIAL | 4.5V | Parallel | - | - | - | - | - | ASYNCHRONOUS | - | - | - | 2KX8 | - | - | - | - | - | 16384 bit | 100 ns | - | - | - | - | - | - | 61.7mm | 15.24mm | 3.8mm | - | RoHS Compliant | Lead Free | ||
| 7132LA100PDG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V016SA20BFG8Anlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Single 3.3V 1M-Bit 64K x 16 20ns 48-Pin CABGA T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | Surface Mount | - | - | 48 | - | RAM, SDR, SRAM - Asynchronous | Tape & Reel | 2011 | e1 | yes | Active | 3 (168 Hours) | 48 | - | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | - | - | BOTTOM | BALL | 260 | 1 | 3.3V | 0.75mm | - | 30 | 48 | - | - | 3.3V | - | - | COMMERCIAL | - | Parallel | 3.6V | 3V | 128kB | 1 | 120mA | - | - | - | 20 ns | - | 3-STATE | - | 16b | 1 Mb | - | - | - | COMMON | Asynchronous | 16b | 3V | - | - | 7mm | 7mm | 1.4mm | No | RoHS Compliant | Lead Free | ||
| 71V016SA20BFG8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V016SA10PHGI8Anlielectronics Тип | Integrated Device Technology (IDT) |
SRAM 64Kx16 ASYNCHRONOUS 3.3V STATIC RAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | Surface Mount | TSOP | - | 44 | - | RAM, SDR, SRAM - Asynchronous | Tape & Reel | 2007 | e3 | yes | Active | 3 (168 Hours) | 44 | - | Matte Tin (Sn) - annealed | 85°C | -40°C | - | - | DUAL | GULL WING | 260 | 1 | 3.3V | 0.8mm | - | 30 | 44 | - | - | 3.3V | - | - | INDUSTRIAL | - | Parallel | 3.6V | 3.15V | 128kB | 1 | - | - | - | - | 10 ns | - | 3-STATE | - | 16b | 1 Mb | - | - | - | COMMON | Asynchronous | 16b | - | - | - | 18.41mm | 10.16mm | 1mm | No | RoHS Compliant | Lead Free | ||
| 71V016SA10PHGI8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип6116SA20TPGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM 16K Asynch. 2Kx8 HS, L-Pwr, SRAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Through Hole | PDIP | - | 24 | - | RAM, SDR, SRAM - Asynchronous | Bulk | 2013 | e3 | yes | Active | 1 (Unlimited) | 24 | EAR99 | MATTE TIN | 70°C | 0°C | - | - | DUAL | - | 260 | 1 | 5V | 2.54mm | - | - | 24 | - | - | 5V | - | 5V | COMMERCIAL | - | Parallel | 5.5V | 4.5V | 2kB | 1 | 105mA | - | - | - | 20 ns | 2KX8 | 3-STATE | - | 11b | 16 kb | 0.002A | - | - | COMMON | Asynchronous | 8b | - | - | - | 31.75mm | 7.62mm | 3.3mm | No | RoHS Compliant | Lead Free | ||
| 6116SA20TPG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71256SA15PZG8Anlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Single 5V 256K-Bit 32K x 8 15ns 28-Pin TSOP-I T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | TSOP | - | 28 | - | RAM, SDR, SRAM - Asynchronous | - | 2011 | e3 | yes | Active | 3 (168 Hours) | 28 | EAR99 | Matte Tin (Sn) - annealed | 70°C | 0°C | - | - | DUAL | GULL WING | 260 | 1 | 5V | 0.55mm | - | 30 | 28 | - | - | 5V | - | 5V | COMMERCIAL | - | Parallel | 5.5V | 4.5V | 32kB | 1 | 150mA | - | - | - | 15 ns | 32KX8 | 3-STATE | - | 15b | 256 kb | - | - | - | COMMON | Asynchronous | 8b | - | - | - | 8mm | 11.8mm | 1mm | No | RoHS Compliant | Lead Free | ||
| 71256SA15PZG8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V67603S133BGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 3.3V 9M-Bit 256K x 36 4.2ns 119-Pin BGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | BGA | - | 119 | 133MHz | RAM, SDR, SRAM | - | 2007 | e0 | no | Active | 3 (168 Hours) | 119 | - | Tin/Lead (Sn63Pb37) | 70°C | 0°C | PIPELINED ARCHITECTURE | - | BOTTOM | BALL | 225 | 1 | 3.3V | - | 133MHz | 20 | 119 | - | - | 3.3V | - | - | COMMERCIAL | - | Parallel | 3.465V | 3.135V | 1.1MB | 1 | 260mA | - | - | - | 4.2 ns | 256KX36 | 3-STATE | - | 18b | 9 Mb | 0.05A | - | - | COMMON | Synchronous | 36b | - | - | 2.36mm | 14mm | 22mm | 2.15mm | No | RoHS Compliant | Contains Lead | ||
| 71V67603S133BG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V3577S80PFGIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM 4M 3.3V I/O PBSRAM SLOW X
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | Surface Mount | TQFP | - | 100 | 100MHz | RAM, SDR, SRAM | - | 2005 | e3 | yes | Active | 3 (168 Hours) | 100 | - | Matte Tin (Sn) - annealed | 85°C | -40°C | FLOW THROUGH ARCHITECTURE | - | QUAD | GULL WING | 260 | 1 | 3.3V | 0.65mm | 100MHz | 30 | 100 | - | - | 3.3V | - | - | INDUSTRIAL | - | Parallel | 3.465V | 3.135V | 576kB | 1 | 210mA | - | - | - | 8 ns | - | 3-STATE | - | 17b | 4.5 Mb | 0.035A | - | - | COMMON | Synchronous | 36b | - | - | - | 20mm | 14mm | 1.4mm | No | RoHS Compliant | Lead Free | ||
| 71V3577S80PFGI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип7134SA55JG8Anlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Dual 5V 32K-Bit 4K x 8 55ns 52-Pin PLCC T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | PLCC | - | 52 | - | RAM, SDR, SRAM | - | 2013 | e3 | yes | Active | 1 (Unlimited) | 52 | EAR99 | Matte Tin (Sn) - annealed | 70°C | 0°C | AUTOMATIC POWER-DOWN | - | QUAD | J BEND | 260 | 1 | 5V | - | - | - | 52 | - | - | 5V | - | 5V | COMMERCIAL | - | Parallel | 5.5V | 4.5V | 4kB | 2 | 240mA | - | - | - | 55 ns | 4KX8 | 3-STATE | - | 24b | 32 kb | 0.015A | - | - | COMMON | Asynchronous | 8b | - | - | 4.57mm | 19mm | 19mm | 3.63mm | No | RoHS Compliant | Lead Free | ||
| 7134SA55JG8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V416S12PHGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM 256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | Surface Mount | TSOP | - | 44 | - | RAM, SDR, SRAM - Asynchronous | - | 2005 | e3 | yes | Active | 3 (168 Hours) | 44 | - | Matte Tin (Sn) - annealed | 70°C | 0°C | - | - | DUAL | GULL WING | 260 | 1 | 3.3V | 0.8mm | - | 30 | 44 | - | - | 3.3V | - | - | COMMERCIAL | - | Parallel | 3.6V | 3V | 512kB | 1 | 180mA | - | 180mA | - | 12 ns | - | 3-STATE | - | 18b | 4 Mb | 0.02A | - | - | COMMON | Asynchronous | 16b | 3V | - | - | 18.41mm | 10.16mm | 1mm | No | RoHS Compliant | Lead Free | ||
| 71V416S12PHG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V424L10PHGIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM 512Kx8 ASYNCHRONOUS 3.3V CMOS SRAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | Surface Mount | TSOP | - | 44 | - | RAM, SDR, SRAM - Asynchronous | - | 2008 | e3 | yes | Active | 3 (168 Hours) | 44 | - | Matte Tin (Sn) - annealed | 85°C | -40°C | - | - | DUAL | GULL WING | 260 | 1 | 3.3V | 0.8mm | - | 30 | 44 | - | - | 3.3V | - | - | INDUSTRIAL | - | Parallel | 3.6V | 3V | 512kB | 1 | - | - | - | - | 10 ns | - | 3-STATE | - | 19b | 4 Mb | - | - | - | COMMON | Asynchronous | 8b | 3V | - | - | 18.41mm | 10.16mm | 1mm | No | RoHS Compliant | Lead Free | ||
| 71V424L10PHGI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71016S20PHGI8Anlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Single 5V 1M-Bit 64K x 16 20ns 44-Pin TSOP-II T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | Surface Mount | TSOP | - | 44 | - | RAM, SDR, SRAM - Asynchronous | - | 2007 | e3 | yes | Active | 3 (168 Hours) | 44 | - | Matte Tin (Sn) - annealed | 85°C | -40°C | - | - | DUAL | GULL WING | 260 | 1 | 5V | 0.8mm | - | 30 | 44 | - | - | 5V | - | 5V | INDUSTRIAL | - | Parallel | 5.5V | 4.5V | 128kB | 1 | 170mA | - | - | - | 20 ns | - | 3-STATE | - | 16b | 1 Mb | - | - | - | COMMON | Asynchronous | 16b | - | - | - | 18.41mm | 10.16mm | 1mm | No | RoHS Compliant | Lead Free | ||
| 71016S20PHGI8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V016SA12YGI8Anlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Single 3.3V 1M-Bit 64K x 16 12ns 44-Pin SOJ T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | Surface Mount | - | - | 44 | - | RAM, SDR, SRAM - Asynchronous | Tape & Reel | 2011 | e3 | yes | Active | 3 (168 Hours) | 44 | - | Matte Tin (Sn) - annealed | 85°C | -40°C | - | - | DUAL | J BEND | 260 | 1 | 3.3V | - | - | - | 44 | - | - | 3.3V | - | - | INDUSTRIAL | - | Parallel | 3.6V | 3V | 128kB | 1 | 160mA | - | - | - | 12 ns | - | 3-STATE | - | 16b | 1 Mb | - | - | - | COMMON | Asynchronous | 16b | 3V | - | 3.683mm | 28.6mm | 10.2mm | 2.9mm | No | RoHS Compliant | Lead Free | ||
| 71V016SA12YGI8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип7008L15JGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Dual 5V 512K-Bit 64K x 8 15ns 84-Pin PLCC Tray
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | PLCC | - | 84 | - | RAM, SDR, SRAM | Bulk | 2006 | e3 | yes | Active | 3 (168 Hours) | 84 | - | Matte Tin (Sn) - annealed | 70°C | 0°C | - | - | QUAD | - | 260 | 1 | 5V | - | - | - | 84 | - | - | 5V | - | 5V | COMMERCIAL | - | Parallel | 5.5V | 4.5V | 64kB | 2 | 325mA | - | - | - | 15 ns | 64KX8 | 3-STATE | - | 16b | 512 kb | 0.005A | - | - | COMMON | Asynchronous | 8b | - | - | - | 29.21mm | 29.21mm | 3.63mm | No | RoHS Compliant | Lead Free | ||
| 7008L15JG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V3557S75PFGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 3.3V 4.5M-Bit 128K x 36 7.5ns 100-Pin TQFP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | Surface Mount | TQFP | - | 100 | 100MHz | RAM, SDR, SRAM | - | 2009 | e3 | yes | Active | 3 (168 Hours) | 100 | - | Matte Tin (Sn) - annealed | 70°C | 0°C | FLOW-THROUGH ARCHITECHTURE | - | QUAD | GULL WING | 260 | 1 | 3.3V | 0.65mm | 100MHz | 30 | 100 | - | - | 3.3V | - | - | COMMERCIAL | - | Parallel | 3.465V | 3.135V | 512kB | 1 | 275mA | - | - | - | 7.5 ns | - | 3-STATE | - | 17b | 4.5 Mb | 0.04A | - | - | COMMON | Synchronous | 36b | - | - | - | 20mm | 14mm | 1.4mm | No | RoHS Compliant | Lead Free | ||
| 71V3557S75PFG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71024S20YGIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM 128Kx8 ASYNCHRONOUS 5.0V STATIC RAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | - | - | YES | 32 | - | RAM, SDR, SRAM - Asynchronous | - | 2009 | e3 | yes | Active | 3 (168 Hours) | 32 | - | Matte Tin (Sn) - annealed | 85°C | -40°C | - | - | DUAL | J BEND | 260 | 1 | 5V | - | - | - | 32 | - | - | 5V | - | 5V | INDUSTRIAL | - | Parallel | 5.5V | 4.5V | 128kB | 1 | - | - | - | - | 20 ns | - | 3-STATE | - | 17b | 1 Mb | - | - | - | COMMON | - | - | - | - | 3.683mm | 20.9mm | 10.2mm | 2.2mm | No | RoHS Compliant | Lead Free | ||
| 71024S20YGI |
Индекс :
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