| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Mount | Package / Case | Surface Mount | Number of Pins | Frequency(Max) | Memory Types | Usage Level | Packaging | Published | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Supply Voltage | Terminal Pitch | Frequency | Time@Peak Reflow Temperature-Max (s) | Pin Count | Operating Supply Voltage | Power Supplies | Temperature Grade | Interface | Max Supply Voltage | Min Supply Voltage | Memory Size | Number of Ports | Nominal Supply Current | Access Time | Organization | Output Characteristics | Address Bus Width | Density | Standby Current-Max | Screening Level | I/O Type | Sync/Async | Word Size | Standby Voltage-Min | Height Seated (Max) | Length | Width | Thickness | Radiation Hardening | RoHS Status | Lead Free |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. Тип71V416S15PHG8Anlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 15ns 44-Pin TSOP-II T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | Surface Mount | TSOP | - | 44 | - | RAM, SDR, SRAM - Asynchronous | - | Tape & Reel | 2012 | e3 | yes | Active | 3 (168 Hours) | 44 | - | Matte Tin (Sn) - annealed | 70°C | 0°C | - | DUAL | GULL WING | 260 | 1 | 3.3V | 0.8mm | - | 30 | 44 | 3.3V | - | COMMERCIAL | Parallel | 3.6V | 3V | 512kB | 1 | 170mA | 15 ns | - | 3-STATE | 18b | 4 Mb | 0.02A | - | COMMON | Asynchronous | 16b | 3V | - | 18.41mm | 10.16mm | 1mm | No | RoHS Compliant | Lead Free | ||
| 71V416S15PHG8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71T75802S150BGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 2.5V 18M-Bit 1M x 18 3.8ns 119-Pin BGA Tube/Tray
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Surface Mount | BGA | - | 119 | 150MHz | RAM, SDR, SRAM | - | - | 2012 | e0 | no | Active | 3 (168 Hours) | 119 | - | Tin/Lead (Sn63Pb37) | 70°C | 0°C | PIPELINED ARCHITECTURE | BOTTOM | BALL | 225 | 1 | 2.5V | - | 150MHz | - | 119 | 2.5V | - | COMMERCIAL | Parallel | 2.625V | 2.375V | 2.3MB | 1 | 215mA | 3.8 ns | - | 3-STATE | 20b | 18 Mb | 0.04A | - | COMMON | Synchronous | 18b | 2.38V | 2.36mm | 14mm | 22mm | 2.15mm | No | RoHS Compliant | Contains Lead | ||
| 71T75802S150BG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71024S20YGIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM 128Kx8 ASYNCHRONOUS 5.0V STATIC RAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | - | - | YES | 32 | - | RAM, SDR, SRAM - Asynchronous | - | - | 2009 | e3 | yes | Active | 3 (168 Hours) | 32 | - | Matte Tin (Sn) - annealed | 85°C | -40°C | - | DUAL | J BEND | 260 | 1 | 5V | - | - | - | 32 | 5V | 5V | INDUSTRIAL | Parallel | 5.5V | 4.5V | 128kB | 1 | - | 20 ns | - | 3-STATE | 17b | 1 Mb | - | - | COMMON | - | - | - | 3.683mm | 20.9mm | 10.2mm | 2.2mm | No | RoHS Compliant | Lead Free | ||
| 71024S20YGI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V3579S85PFGIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 3.3V 4.5M-Bit 256K x 18 8.5ns 100-Pin TQFP Tube/Tray
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | Through Hole | TQFP | - | 100 | 87MHz | RAM, SDR, SRAM | - | - | 2005 | e3 | yes | Active | 3 (168 Hours) | 100 | - | Matte Tin (Sn) - annealed | 85°C | -40°C | FLOW THROUGH ARCHITECTURE | QUAD | GULL WING | 260 | 1 | 3.3V | 0.65mm | - | 30 | 100 | 3.3V | - | INDUSTRIAL | Parallel | 3.465V | 3.135V | 512kB | 1 | - | 8.5 ns | - | 3-STATE | 18b | 4.5 Mb | 0.035A | - | COMMON | - | - | - | - | 20mm | 14mm | 1.4mm | No | RoHS Compliant | Lead Free | ||
| 71V3579S85PFGI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71016S20PHGI8Anlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Single 5V 1M-Bit 64K x 16 20ns 44-Pin TSOP-II T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | Surface Mount | TSOP | - | 44 | - | RAM, SDR, SRAM - Asynchronous | - | - | 2007 | e3 | yes | Active | 3 (168 Hours) | 44 | - | Matte Tin (Sn) - annealed | 85°C | -40°C | - | DUAL | GULL WING | 260 | 1 | 5V | 0.8mm | - | 30 | 44 | 5V | 5V | INDUSTRIAL | Parallel | 5.5V | 4.5V | 128kB | 1 | 170mA | 20 ns | - | 3-STATE | 16b | 1 Mb | - | - | COMMON | Asynchronous | 16b | - | - | 18.41mm | 10.16mm | 1mm | No | RoHS Compliant | Lead Free | ||
| 71016S20PHGI8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71321SA25TFAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Dual 5V 16K-Bit 2K x 8 25ns 64-Pin STQFP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | TQFP | - | 64 | - | RAM, SDR, SRAM | - | - | 2005 | e0 | no | Active | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; AUTOMATIC POWER-DOWN | QUAD | GULL WING | 240 | 1 | 5V | 0.5mm | - | 20 | 64 | 5V | 5V | COMMERCIAL | Parallel | 5.5V | 4.5V | 2kB | 2 | 220mA | 25 ns | - | 3-STATE | 22b | 16 kb | 0.015A | - | COMMON | Asynchronous | 8b | - | - | 10mm | 10mm | 1.4mm | No | RoHS Compliant | Contains Lead | ||
| 71321SA25TF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип7140SA55PAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM 8K(1KX8)CMOS DUALPORT RAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Through Hole | PDIP | - | 48 | - | RAM, SDR, SRAM | - | Bulk | 2013 | e0 | no | Discontinued | 1 (Unlimited) | 48 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | - | DUAL | - | 245 | 1 | 5V | - | - | - | 48 | 5V | 5V | COMMERCIAL | Parallel | 5.5V | 4.5V | 1kB | 2 | 155mA | 55 ns | 1KX8 | 3-STATE | 20b | 8 kb | 0.015A | - | COMMON | Asynchronous | 8b | - | 5.08mm | 61.7mm | 15.24mm | 3.8mm | No | RoHS Compliant | Contains Lead | ||
| 7140SA55P | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V67903S80PFGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 3.3V 9M-Bit 512K x 18 8ns 100-Pin TQFP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Surface Mount | TQFP | - | 100 | 100MHz | RAM, SDR, SRAM | - | - | 2004 | e3 | yes | Active | 3 (168 Hours) | 100 | - | Matte Tin (Sn) - annealed | 70°C | 0°C | FLOW-THROUGH ARCHITECTURE | QUAD | GULL WING | 260 | 1 | 3.3V | 0.65mm | 100MHz | 30 | 100 | 3.3V | - | COMMERCIAL | Parallel | 3.465V | 3.135V | 1.1MB | 1 | 210mA | 8 ns | - | 3-STATE | 19b | 9 Mb | 0.05A | - | COMMON | Synchronous | 18b | - | - | 20mm | 14mm | 1.4mm | No | RoHS Compliant | Lead Free | ||
| 71V67903S80PFG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип7130LA25JGI8Anlielectronics Тип | Integrated Device Technology (IDT) |
SRAM 8K(1KX8)CMOS DUAL PT RAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | PLCC | - | 52 | - | RAM, SDR, SRAM | - | - | 2013 | - | - | Active | - | - | - | - | 85°C | -40°C | - | - | - | - | - | - | - | - | - | - | 5V | - | - | Parallel | 5.5V | 4.5V | 1kB | 2 | 220mA | 25 ns | - | - | 20b | 8 kb | - | - | - | Asynchronous | 8b | - | - | 19mm | 19mm | 3.63mm | No | RoHS Compliant | Lead Free | ||
| 7130LA25JGI8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V424S10YGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM 512Kx8 ASYNCHRONOUS 3.3V CMOS SRAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | Surface Mount | - | - | 36 | - | RAM, SDR, SRAM - Asynchronous | - | - | 2008 | e3 | yes | Active | 3 (168 Hours) | 36 | - | Matte Tin (Sn) - annealed | 70°C | 0°C | - | DUAL | J BEND | 260 | 1 | 3.3V | - | - | - | 36 | 3.3V | - | COMMERCIAL | Parallel | 3.6V | 3V | 512kB | 1 | 180mA | 10 ns | - | 3-STATE | 19b | 4 Mb | 0.02A | - | COMMON | Asynchronous | 8b | 3V | 3.76mm | 23.4mm | 10.2mm | 2.2mm | No | RoHS Compliant | Lead Free | ||
| 71V424S10YG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V256SA12YGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM 32Kx8 ASYNCHRONOUS 3.3V STATIC RAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | - | - | 28 | - | RAM, SDR, SRAM - Asynchronous | - | - | 2006 | e3 | yes | Active | 3 (168 Hours) | 28 | EAR99 | MATTE TIN | 70°C | 0°C | - | DUAL | J BEND | 260 | 1 | 3.3V | - | - | - | 28 | 3.3V | - | COMMERCIAL | Parallel | 3.6V | 3V | 32kB | 1 | 90mA | 12 ns | 32KX8 | 3-STATE | 15b | 256 kb | 0.002A | - | COMMON | Asynchronous | 8b | 3V | - | 17.9mm | 7.6mm | 2.67mm | No | RoHS Compliant | Lead Free | ||
| 71V256SA12YG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71024S15YGIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM 128Kx8 ASYNCHRONOUS 5.0V STATIC RAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | - | - | YES | 32 | - | RAM, SDR, SRAM - Asynchronous | - | - | 2009 | e3 | yes | Active | 3 (168 Hours) | 32 | - | Matte Tin (Sn) - annealed | 85°C | -40°C | - | DUAL | J BEND | 260 | 1 | 5V | - | - | - | 32 | 5V | 5V | INDUSTRIAL | Parallel | 5.5V | 4.5V | 128kB | 1 | - | 15 ns | - | 3-STATE | 17b | 1 Mb | - | - | COMMON | - | - | - | 3.683mm | 20.9mm | 10.2mm | 2.2mm | No | RoHS Compliant | Lead Free | ||
| 71024S15YGI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V124SA12PHGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM 128Kx8 ASYNCHRONOUS 3.3V STATIC RAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | SOIC | - | 32 | - | RAM, SDR, SRAM - Asynchronous | - | - | 2013 | e3 | yes | Active | 3 (168 Hours) | 32 | - | Matte Tin (Sn) - annealed | 70°C | 0°C | - | DUAL | GULL WING | 260 | 1 | 3.3V | - | - | 30 | 32 | 3.3V | - | COMMERCIAL | Parallel | 3.6V | 3V | 128kB | 1 | 130mA | 12 ns | - | 3-STATE | 17b | 1 Mb | - | - | COMMON | Asynchronous | 8b | 3V | - | 20.95mm | 10.16mm | 1mm | No | RoHS Compliant | Lead Free | ||
| 71V124SA12PHG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V124SA10PHGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM 128Kx8 ASYNCHRONOUS 3.3V STATIC RAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | TSOP | - | 32 | - | RAM, SDR, SRAM - Asynchronous | - | - | 2013 | e3 | yes | Active | 3 (168 Hours) | 32 | - | Matte Tin (Sn) - annealed | 70°C | 0°C | - | DUAL | GULL WING | 260 | 1 | 3.3V | - | - | 30 | 32 | 3.3V | - | COMMERCIAL | Parallel | 3.6V | 3.15V | 128kB | 1 | 145mA | 10 ns | - | 3-STATE | 17b | 1 Mb | - | - | COMMON | Asynchronous | 8b | - | - | 20.95mm | 10.16mm | 1mm | No | RoHS Compliant | Lead Free | ||
| 71V124SA10PHG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип6116SA90DBAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Single 5V 16K-Bit 2K x 8 90ns 24-Pin CDIP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | Through Hole | CDIP | - | 24 | - | RAM, SDR, SRAM - Asynchronous | Military grade | Bulk | 2013 | e0 | no | Active | 1 (Unlimited) | 24 | - | Tin/Lead (Sn63Pb37) | 125°C | -55°C | - | DUAL | - | 240 | 1 | 5V | 2.54mm | - | - | 24 | 5V | 5V | MILITARY | Parallel | 5.5V | 4.5V | 2kB | 1 | 90mA | 90 ns | 2KX8 | 3-STATE | 11b | 16 kb | - | MIL-STD-883 Class B | COMMON | Asynchronous | 8b | - | 4.826mm | 32mm | 15.24mm | 2.9mm | No | RoHS Compliant | Contains Lead | ||
| 6116SA90DB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V35761S183PFGIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM 128Kx36 SYNC 3.3V PIPELINED BURST SRAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | Surface Mount | TQFP | - | 100 | 183MHz | RAM, SDR, SRAM | - | - | 2009 | e3 | yes | Active | 3 (168 Hours) | 100 | - | Matte Tin (Sn) - annealed | 85°C | -40°C | PIPELINED ARCHITECTURE | QUAD | GULL WING | 260 | 1 | 3.3V | 0.65mm | 183MHz | 30 | 100 | 3.3V | - | INDUSTRIAL | Parallel | 3.465V | 3.135V | 512kB | 1 | 350mA | 3.3 ns | - | 3-STATE | 17b | 4.5 Mb | 0.035A | - | COMMON | Synchronous | 36b | - | - | 20mm | 14mm | 1.4mm | No | RoHS Compliant | Lead Free | ||
| 71V35761S183PFGI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип6116SA45TDBAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM 16K Asynch. 2Kx8 HS, L-Pwr, SRAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | CDIP | NO | 24 | - | RAM, SDR, SRAM - Asynchronous | Military grade | Bulk | 2013 | e0 | no | Active | 1 (Unlimited) | 24 | - | Tin/Lead (Sn/Pb) | 125°C | -55°C | - | DUAL | THROUGH-HOLE | 240 | 1 | 5V | 2.54mm | - | - | 24 | 5V | 5V | MILITARY | Parallel | 5.5V | 4.5V | 2kB | 1 | - | 45 ns | 2KX8 | 3-STATE | 11b | 16 kb | - | MIL-STD-883 Class B | COMMON | - | - | - | 5.08mm | 32.51mm | 7.62mm | 3.56mm | No | RoHS Compliant | Contains Lead | ||
| 6116SA45TDB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V416L15PHG8Anlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 15ns 44-Pin TSOP-II T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | Surface Mount | TSOP | - | 44 | - | RAM, SDR, SRAM - Asynchronous | - | - | 2005 | e3 | yes | Active | 3 (168 Hours) | 44 | - | Matte Tin (Sn) - annealed | 70°C | 0°C | - | DUAL | GULL WING | 260 | 1 | 3.3V | 0.8mm | - | 30 | 44 | 3.3V | - | COMMERCIAL | Parallel | 3.6V | 3V | 512kB | 1 | 160mA | 15 ns | - | 3-STATE | 18b | 4 Mb | - | - | COMMON | Asynchronous | 16b | 3V | - | 18.41mm | 10.16mm | 1mm | No | RoHS Compliant | Lead Free | ||
| 71V416L15PHG8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71256SA20YGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM 32Kx8 ASYNCHRONOUS 5.0V STATIC RAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | Surface Mount | - | - | 28 | - | RAM, SDR, SRAM - Asynchronous | - | - | 2011 | e3 | yes | Active | 3 (168 Hours) | 28 | EAR99 | Matte Tin (Sn) - annealed | 70°C | 0°C | - | DUAL | J BEND | 260 | 1 | 5V | - | - | - | 28 | 5V | 5V | COMMERCIAL | Parallel | 5.5V | 4.5V | 32kB | 1 | 145mA | 20 ns | 32KX8 | 3-STATE | 15b | 256 kb | - | - | COMMON | Asynchronous | 8b | - | 3.556mm | 17.9mm | 7.6mm | 2.67mm | No | RoHS Compliant | Lead Free | ||
| 71256SA20YG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V424L12YG8Anlielectronics Тип | Integrated Device Technology (IDT) |
SRAM 512Kx8 ASYNCHRONOUS 3.3V CMOS SRAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | Surface Mount | - | - | 36 | - | RAM, SDR, SRAM - Asynchronous | - | - | 2009 | e3 | yes | Active | 3 (168 Hours) | 36 | - | Matte Tin (Sn) - annealed | 70°C | 0°C | - | DUAL | J BEND | 260 | 1 | 3.3V | - | - | - | 36 | 3.3V | - | COMMERCIAL | Parallel | 3.6V | 3V | 512kB | 1 | 155mA | 12 ns | - | 3-STATE | 19b | 4 Mb | - | - | COMMON | Asynchronous | 8b | 3V | 3.683mm | 23.4mm | 10.2mm | 2.2mm | No | RoHS Compliant | Lead Free | ||
| 71V424L12YG8 |
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ