| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Mount | Package / Case | Surface Mount | Number of Pins | Frequency(Max) | Memory Types | Usage Level | Packaging | Published | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Supply Voltage | Terminal Pitch | Frequency | Time@Peak Reflow Temperature-Max (s) | Pin Count | Qualification Status | Operating Supply Voltage | Power Supplies | Temperature Grade | Interface | Max Supply Voltage | Min Supply Voltage | Memory Size | Number of Ports | Nominal Supply Current | Max Supply Current | Access Time | Organization | Output Characteristics | Address Bus Width | Density | Standby Current-Max | Screening Level | I/O Type | Sync/Async | Word Size | Standby Voltage-Min | Height | Height Seated (Max) | Length | Width | Thickness | Radiation Hardening | RoHS Status | Lead Free |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. Тип71V3557S85PFGIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 3.3V 4.5M-Bit 128K x 36 8.5ns 100-Pin TQFP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | Surface Mount | TQFP | - | 100 | 100MHz | RAM, SDR, SRAM | - | - | 2009 | e3 | yes | Active | 3 (168 Hours) | 100 | - | Matte Tin (Sn) - annealed | 85°C | -40°C | FLOW-THROUGH ARCHITECHTURE | QUAD | GULL WING | 260 | 1 | 3.3V | 0.65mm | 91MHz | 30 | 100 | - | 3.3V | - | INDUSTRIAL | Parallel | 3.465V | 3.135V | 512kB | 1 | 235mA | - | 8.5 ns | - | 3-STATE | 17b | 4.5 Mb | 0.045A | - | COMMON | Synchronous | 36b | - | - | - | 20mm | 14mm | 1.4mm | No | RoHS Compliant | Lead Free | ||
| 71V3557S85PFGI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V25761S200BGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM 128Kx36 SYNC 3.3V PIPELINED BURST SRAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | BGA | - | 119 | 200MHz | RAM, SDR, SRAM | - | - | 2009 | e0 | no | - | 3 (168 Hours) | 119 | - | Tin/Lead (Sn63Pb37) | 70°C | 0°C | PIPELINED ARCHITECTURE | BOTTOM | BALL | 225 | 1 | 3.3V | - | 200MHz | 20 | 119 | Not Qualified | 3.3V | - | COMMERCIAL | Parallel | 3.465V | 3.135V | 512kB | 1 | 360mA | - | 3.1 ns | - | 3-STATE | 17b | 4.5 Mb | 0.03A | - | COMMON | Synchronous | 36b | - | - | 2.36mm | 14mm | 22mm | 2.15mm | - | RoHS Compliant | Contains Lead | ||
| 71V25761S200BG | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип70T3719MS133BBGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Dual 2.5V 18M-Bit 256K x 72-Bit 15ns/4.2ns 324-Pin BGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 14 Weeks | Surface Mount | BGA | - | 324 | 133MHz | RAM, SDR, SRAM | - | Bulk | 2010 | e1 | yes | Active | 3 (168 Hours) | 324 | - | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | PIPELINED OR FLOW-THROUGH ARCHITECTURE | BOTTOM | BALL | 260 | 1 | 2.5V | 1mm | 133MHz | 30 | 324 | - | 2.5V | - | COMMERCIAL | Parallel | 2.6V | 2.4V | 2.3MB | 2 | 740mA | - | 4.2 ns | - | 3-STATE | 36b | 18 Mb | - | - | COMMON | Synchronous | 72b | - | - | - | 19mm | 19mm | 1.76mm | No | RoHS Compliant | Lead Free | ||
| 70T3719MS133BBG | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V016SA10BF8Anlielectronics Тип | Integrated Device Technology (IDT) |
SRAM 32K X 16 SRAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | Surface Mount | - | - | 48 | - | RAM, SDR, SRAM - Asynchronous | - | - | 2011 | - | - | Active | - | - | - | - | 70°C | 0°C | - | - | - | - | - | - | - | - | - | - | - | 3.3V | - | - | Parallel | 3.6V | 3.15V | 128kB | 1 | 160mA | - | 10 ns | - | - | 16b | 1 Mb | - | - | - | Asynchronous | 16b | - | - | - | 7mm | 7mm | 1.4mm | No | RoHS Compliant | Contains Lead | ||
| 71V016SA10BF8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71256SA15PZGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM 32Kx8 ASYNCHRONOUS 5.0V STATIC RAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | TSOP | - | 28 | - | RAM, SDR, SRAM - Asynchronous | - | - | 2011 | e3 | yes | Active | 3 (168 Hours) | 28 | EAR99 | Matte Tin (Sn) - annealed | 70°C | 0°C | - | DUAL | GULL WING | 260 | 1 | 5V | 0.55mm | - | 30 | 28 | - | 5V | 5V | COMMERCIAL | Parallel | 5.5V | 4.5V | 32kB | 1 | 150mA | - | 15 ns | 32KX8 | 3-STATE | 15b | 256 kb | - | - | COMMON | Asynchronous | 8b | - | - | - | 8mm | 11.8mm | 1mm | No | RoHS Compliant | Lead Free | ||
| 71256SA15PZG | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип6116LA120TDBAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Single 5V 16K-Bit 2K x 8 120ns 24-Pin CDIP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | Through Hole | CDIP | - | 24 | - | RAM, SDR, SRAM - Asynchronous | Military grade | Bulk | 2013 | e0 | no | Active | 1 (Unlimited) | 24 | - | Tin/Lead (Sn/Pb) | 125°C | -55°C | - | DUAL | - | 240 | 1 | 5V | 2.54mm | - | - | 24 | - | 5V | 5V | MILITARY | Parallel | 5.5V | 4.5V | 2kB | 1 | 85mA | - | 120 ns | 2KX8 | 3-STATE | 11b | 16 kb | 0.0003A | MIL-STD-883 Class B | COMMON | Asynchronous | 8b | 2V | - | 5.08mm | 32.51mm | 7.62mm | 3.56mm | No | RoHS Compliant | Contains Lead | ||
| 6116LA120TDB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип7024L25JAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Dual 5V 64K-Bit 4K x 16 25ns 84-Pin PLCC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | PLCC | - | 84 | - | RAM, SDR, SRAM | - | - | 2000 | e0 | no | Active | 1 (Unlimited) | 84 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | QUAD | J BEND | 225 | 1 | 5V | - | - | - | 84 | - | 5V | 5V | COMMERCIAL | Parallel | 5.5V | 4.5V | 8kB | 2 | 220mA | - | 25 ns | 4KX16 | 3-STATE | 24b | 64 kb | 0.0015A | - | COMMON | Asynchronous | 16b | 2V | - | 4.57mm | 29.21mm | 29.21mm | 3.63mm | No | RoHS Compliant | Contains Lead | ||
| 7024L25J | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V65603S150BGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 3.3V 9M-Bit 256K x 36 3.8ns 119-Pin BGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | BGA | - | 119 | 150MHz | RAM, SDR, SRAM | - | - | 2007 | e0 | no | Active | 3 (168 Hours) | 119 | - | Tin/Lead (Sn63Pb37) | 70°C | 0°C | PIPELINED ARCHITECTURE | BOTTOM | BALL | 225 | 1 | 3.3V | - | 150MHz | 20 | 119 | - | 3.3V | - | COMMERCIAL | Parallel | 3.465V | 3.135V | 1.1MB | 1 | 325mA | - | 6.7 ns | 256KX36 | 3-STATE | 18b | 9 Mb | 0.04A | - | COMMON | Synchronous | 36b | - | - | 2.36mm | 14mm | 22mm | 2.15mm | No | RoHS Compliant | Contains Lead | ||
| 71V65603S150BG | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V67903S80BQIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 3.3V 9M-Bit 512K x 18 8ns 165-Pin CABGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | - | - | 165 | 100MHz | RAM, SDR, SRAM | - | - | 2004 | e0 | no | Active | 3 (168 Hours) | 165 | - | Tin/Lead (Sn63Pb37) | 85°C | -40°C | FLOW-THROUGH ARCHITECTURE | BOTTOM | BALL | 225 | 1 | 3.3V | - | 100MHz | 20 | 165 | - | 3.3V | - | INDUSTRIAL | Parallel | 3.465V | 3.135V | 1.1MB | 1 | 230mA | - | 8 ns | - | 3-STATE | 19b | 9 Mb | 0.07A | - | COMMON | Synchronous | 18b | - | - | - | 15mm | 13mm | 1.2mm | No | RoHS Compliant | Contains Lead | ||
| 71V67903S80BQI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип6116SA25TPGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM 16K Asynch. 2Kx8 HS, L-Pwr, SRAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Through Hole | PDIP | - | 24 | - | RAM, SDR, SRAM - Asynchronous | - | Bulk | 2013 | e3 | yes | Active | 1 (Unlimited) | 24 | EAR99 | MATTE TIN | 70°C | 0°C | - | DUAL | - | 260 | 1 | 5V | 2.54mm | - | - | 24 | - | 5V | 5V | COMMERCIAL | Parallel | 5.5V | 4.5V | 2kB | 1 | 100mA | - | 25 ns | 2KX8 | 3-STATE | 11b | 16 kb | 0.002A | - | COMMON | Asynchronous | 8b | - | - | - | 31.75mm | 7.62mm | 3.3mm | No | RoHS Compliant | Lead Free | ||
| 6116SA25TPG | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип70V05S15PFAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Dual 3.3V 64K-Bit 8K x 8 15ns 64-Pin TQFP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | TQFP | - | 64 | - | RAM, SDR, SRAM | - | - | 2006 | e0 | no | Active | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | - | QUAD | GULL WING | 240 | 1 | 3.3V | 0.8mm | - | 20 | 64 | - | 3.3V | - | COMMERCIAL | Parallel | 3.6V | 3V | 8kB | 2 | 215mA | - | 15 ns | 8KX8 | 3-STATE | 26b | 64 kb | 0.005A | - | COMMON | Asynchronous | 8b | 3V | - | 1.6mm | 14mm | 14mm | 1.4mm | No | RoHS Compliant | Contains Lead | ||
| 70V05S15PF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип7132LA25JIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM 16K(2KX8) CMOS DUAL PT RAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | PLCC | - | 52 | - | RAM, SDR, SRAM | - | - | 2007 | e0 | no | Active | 3 (168 Hours) | 52 | EAR99 | Tin/Lead (Sn85Pb15) | 85°C | -40°C | - | QUAD | J BEND | 225 | 1 | 5V | - | - | - | 52 | - | 5V | 5V | INDUSTRIAL | Parallel | 5.5V | 4.5V | 2kB | 2 | 220mA | - | 25 ns | - | 3-STATE | 22b | 16 kb | 0.004A | - | COMMON | Asynchronous | 8b | 2V | - | 4.57mm | 19mm | 19mm | 3.63mm | No | RoHS Compliant | Contains Lead | ||
| 7132LA25JI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип7130SA55JIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM CHIP ASYNC DUAL 5V 8K-BIT 1K X 8 55NS 52-PIN PLCC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | PLCC | - | 52 | - | RAM, SDR, SRAM | - | - | 2005 | e0 | no | Active | 3 (168 Hours) | 52 | EAR99 | Tin/Lead (Sn85Pb15) | 85°C | -40°C | - | QUAD | J BEND | 225 | 1 | 5V | - | - | - | 52 | - | 5V | 5V | INDUSTRIAL | Parallel | 5.5V | 4.5V | 1kB | 2 | 190mA | - | 55 ns | 1KX8 | 3-STATE | 20b | 8 kb | 0.03A | - | COMMON | Asynchronous | 8b | - | - | 4.57mm | 19mm | 19mm | 3.63mm | No | RoHS Compliant | Contains Lead | ||
| 7130SA55JI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип7024S35PFAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Dual 5V 64K-Bit 4K x 16 35ns 100-Pin TQFP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | - | TQFP | YES | 100 | - | RAM, SDR, SRAM | - | - | 2000 | e0 | no | Active | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | QUAD | GULL WING | 240 | 1 | 5V | 0.5mm | - | 20 | 100 | - | 5V | 5V | COMMERCIAL | Parallel | 5.5V | 4.5V | 8kB | 2 | - | - | 35 ns | 4KX16 | 3-STATE | 24b | 64 kb | 0.015A | - | COMMON | - | - | - | - | 1.6mm | 14mm | 14mm | 1.4mm | No | RoHS Compliant | Contains Lead | ||
| 7024S35PF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип7164L25YGIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM 64K(8KX8) BICMOS STAT RAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | - | - | 28 | - | RAM, SDR, SRAM - Asynchronous | - | - | 2009 | e3 | yes | Active | 3 (168 Hours) | 28 | EAR99 | Matte Tin (Sn) - annealed | 85°C | -40°C | - | DUAL | J BEND | 260 | 1 | 5V | - | - | - | 28 | - | 5V | 5V | INDUSTRIAL | Parallel | 5.5V | 4.5V | 8kB | 1 | 100mA | - | 25 ns | 8KX8 | 3-STATE | 13b | 64 kb | 0.00006A | - | COMMON | Asynchronous | 8b | 2V | - | 3.556mm | 17.9mm | 7.6mm | 2.67mm | No | RoHS Compliant | Lead Free | ||
| 7164L25YGI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V016SA15BFAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM 64KX16 CMOS SRAM 3.3V
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | Surface Mount | - | - | 48 | - | RAM, SDR, SRAM - Asynchronous | - | - | 2007 | e0 | no | Active | 3 (168 Hours) | 48 | - | Tin/Lead (Sn63Pb37) | 70°C | 0°C | - | BOTTOM | BALL | 225 | 1 | 3.3V | 0.75mm | - | 20 | 48 | - | 3.3V | - | INDUSTRIAL | Parallel | 3.6V | 3V | 128kB | 1 | 130mA | - | 15 ns | - | 3-STATE | 16b | 1 Mb | - | - | COMMON | Asynchronous | 16b | - | - | - | 7mm | 7mm | 1.4mm | No | RoHS Compliant | Contains Lead | ||
| 71V016SA15BF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V35761SA200BGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM 4M 3.3V I/O PBSRM FAST X3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | BGA | - | 119 | 200MHz | RAM, SDR, SRAM | - | - | 2009 | e0 | no | Active | 3 (168 Hours) | 119 | - | Tin/Lead (Sn63Pb37) | 70°C | 0°C | PIPELINED ARCHITECTURE | BOTTOM | BALL | 225 | 1 | 3.3V | - | 200MHz | 20 | 119 | Not Qualified | 3.3V | - | COMMERCIAL | Parallel | 3.465V | 3.135V | 512kB | 1 | 360mA | - | 3.1 ns | - | 3-STATE | 17b | 4.5 Mb | 0.03A | - | COMMON | Synchronous | 36b | - | - | 2.36mm | 14mm | 22mm | 2.15mm | - | RoHS Compliant | Contains Lead | ||
| 71V35761SA200BG | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип6116LA20SOGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Single 5V 16K-Bit 2K x 8 20ns 24-Pin SOIC Tube/Tray
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | - | SOIC | YES | 24 | - | RAM, SDR, SRAM - Asynchronous | - | - | 2013 | e3 | yes | Active | 1 (Unlimited) | 24 | EAR99 | Matte Tin (Sn) - annealed | 70°C | 0°C | - | DUAL | GULL WING | 260 | 1 | 5V | - | - | 30 | 24 | - | 5V | 5V | COMMERCIAL | Parallel | 5.5V | 4.5V | 2kB | 1 | - | - | 20 ns | 2KX8 | 3-STATE | 11b | 16 kb | 0.00003A | - | COMMON | - | - | 2V | - | - | 15.4mm | 7.6mm | 2.34mm | No | RoHS Compliant | Lead Free | ||
| 6116LA20SOG | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V67603S133BGI8Anlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 3.3V 9M-Bit 256K x 36 4.2ns 119-Pin BGA T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | BGA | - | 119 | 133MHz | RAM, SDR, SRAM | - | - | 2007 | e0 | no | Active | 3 (168 Hours) | 119 | - | Tin/Lead (Sn63Pb37) | 85°C | -40°C | PIPELINED ARCHITECTURE | BOTTOM | BALL | 225 | 1 | 3.3V | - | 133MHz | 20 | 119 | - | 3.3V | - | INDUSTRIAL | Parallel | 3.465V | 3.135V | 1.1MB | 1 | 280mA | 280mA | 4.2 ns | 256KX36 | 3-STATE | 18b | 9 Mb | 0.07A | - | COMMON | Synchronous | 36b | - | 2.15mm | - | 14mm | 22mm | 2.15mm | No | RoHS Compliant | Contains Lead | ||
| 71V67603S133BGI8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71124S20YGI8Anlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Single 5V 1M-Bit 128K x 8 20ns 32-Pin SOJ T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | - | - | 32 | - | RAM, SDR, SRAM - Asynchronous | - | - | 2009 | - | - | Active | - | - | - | - | 85°C | -40°C | - | - | - | - | - | - | - | - | - | - | - | 5V | - | - | Parallel | 5.5V | 4.5V | 128kB | 1 | 140mA | - | 20 ns | - | - | 17b | 1 Mb | - | - | - | Asynchronous | 8b | - | - | - | 20.9mm | 10.2mm | 2.2mm | No | RoHS Compliant | Lead Free | ||
| 71124S20YGI8 |
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