| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Mount | Package / Case | Surface Mount | Number of Pins | Frequency(Max) | Memory Types | Packaging | Published | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Supply Voltage | Terminal Pitch | Reach Compliance Code | Frequency | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Interface | Max Supply Voltage | Min Supply Voltage | Memory Size | Number of Ports | Nominal Supply Current | Max Supply Current | Supply Current-Max | Access Time | Organization | Output Characteristics | Memory Width | Address Bus Width | Density | Standby Current-Max | Memory Density | Access Time (Max) | I/O Type | Sync/Async | Word Size | Standby Voltage-Min | Output Enable | Height | Height Seated (Max) | Length | Width | Thickness | Radiation Hardening | RoHS Status | Lead Free |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. Тип71V65903S80BG8Anlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 3.3V 9M-Bit 512K x 18 8ns 119-Pin BGA T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | BGA | - | 119 | - | RAM, SDR, SRAM | - | 2005 | e0 | no | Active | 3 (168 Hours) | 119 | - | Tin/Lead (Sn63Pb37) | 70°C | 0°C | FLOW-THROUGH ARCHITECTURE | - | BOTTOM | BALL | 225 | 1 | 3.3V | - | - | 95MHz | 20 | 119 | - | - | 3.3V | - | - | COMMERCIAL | - | Parallel | 3.465V | 3.135V | 1.1MB | 1 | 250mA | 250mA | - | 8 ns | - | 3-STATE | - | 19b | 9 Mb | 0.04A | - | - | COMMON | Synchronous | 18b | - | - | 2.15mm | - | 14mm | 22mm | 2.15mm | No | RoHS Compliant | Contains Lead | ||
| 71V65903S80BG8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип7025L55PFAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Dual 5V 128K-Bit 8K x 16 55ns 100-Pin TQFP Tray
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | TQFP | - | 100 | - | RAM, SDR, SRAM | - | 2009 | e0 | no | Active | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | - | - | QUAD | GULL WING | 240 | 1 | 5V | 0.5mm | - | - | 20 | 100 | - | - | 5V | - | 5V | COMMERCIAL | - | Parallel | 5.5V | 4.5V | 16kB | 2 | 210mA | - | - | 55 ns | 8KX16 | 3-STATE | - | 26b | 128 kb | 0.0015A | - | - | COMMON | Asynchronous | 16b | 2V | - | - | 1.6mm | 14mm | 14mm | 1.4mm | No | RoHS Compliant | Contains Lead | ||
| 7025L55PF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип7134SA55JGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Dual 5V 32K-Bit 4K x 8 55ns 52-Pin PLCC Tube
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | PLCC | - | 52 | - | RAM, SDR, SRAM | - | 2013 | e3 | yes | Active | 1 (Unlimited) | 52 | EAR99 | Matte Tin (Sn) - annealed | 70°C | 0°C | AUTOMATIC POWER-DOWN | - | QUAD | J BEND | 260 | 1 | 5V | - | - | - | - | 52 | - | - | 5V | - | 5V | COMMERCIAL | - | Parallel | 5.5V | 4.5V | 4kB | 2 | 240mA | - | - | 55 ns | 4KX8 | 3-STATE | - | 24b | 32 kb | 0.015A | - | - | COMMON | Asynchronous | 8b | - | - | - | 4.57mm | 19mm | 19mm | 3.63mm | No | RoHS Compliant | Lead Free | ||
| 7134SA55JG | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V3557S85BGIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 3.3V 4.5M-Bit 128K x 36 8.5ns 119-Pin BGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | BGA | - | 119 | - | RAM, SRAM | - | 2009 | e0 | no | Active | 3 (168 Hours) | 119 | - | Tin/Lead (Sn63Pb37) | 85°C | -40°C | FLOW-THROUGH ARCHITECTURE | - | BOTTOM | BALL | 225 | 1 | 3.3V | - | - | 91MHz | 20 | 119 | - | - | 3.3V | - | - | INDUSTRIAL | - | Parallel | 3.465V | 3.135V | - | 1 | 235mA | - | - | 8.5 ns | - | 3-STATE | - | 17b | 4.5 Mb | 0.045A | - | - | COMMON | Synchronous | 36b | - | - | - | 2.36mm | 14mm | 22mm | 2.15mm | No | RoHS Compliant | Contains Lead | ||
| 71V3557S85BGI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIDT71256SA20PZAnlielectronics Тип | Integrated Device Technology (IDT) |
IC SRAM 256KBIT 20NS 28TSOP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | TSSOP | YES | - | - | RAM, SRAM - Asynchronous | - | 2009 | e0 | - | - | 3 (168 Hours) | 28 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | - | 8542.32.00.41 | DUAL | GULL WING | 240 | 1 | 5V | 0.55mm | not_compliant | - | 20 | 28 | R-PDSO-G28 | Not Qualified | - | 5.5V | 5V | COMMERCIAL | 4.5V | Parallel | - | - | - | 1 | - | - | 0.145mA | - | 32KX8 | 3-STATE | 8 | - | - | 0.015A | 262144 bit | 20 ns | COMMON | - | - | 4.5V | YES | - | 1.2mm | 11.8mm | 8mm | - | - | Non-RoHS Compliant | - | ||
| IDT71256SA20PZ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V2546S133PFGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 3.3V 4.5M-Bit 128K x 36 4.2ns 100-Pin TQFP Tube/Tray
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | Surface Mount | TQFP | - | 100 | 133MHz | RAM, SDR, SRAM | - | 2009 | e3 | yes | Active | 3 (168 Hours) | 100 | - | Matte Tin (Sn) - annealed | 70°C | 0°C | PIPELINED ARCHITECTURE | - | QUAD | GULL WING | 260 | 1 | 3.3V | 0.65mm | - | 133MHz | 30 | 100 | - | - | 3.3V | - | - | COMMERCIAL | - | Parallel | 3.465V | 3.135V | 512kB | 1 | 300mA | - | - | 4.2 ns | - | 3-STATE | - | 17b | 4.5 Mb | 0.04A | - | - | COMMON | Synchronous | 36b | - | - | - | - | 20mm | 14mm | 1.4mm | No | RoHS Compliant | Lead Free | ||
| 71V2546S133PFG | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V2556SA100BGIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM 4M X36 2.5V I/O SLOW ZBT
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | BGA | - | 119 | 100MHz | RAM, SDR, SRAM | - | 2011 | e0 | no | Active | 3 (168 Hours) | 119 | - | Tin/Lead (Sn63Pb37) | 85°C | -40°C | PIPELINED ARCHITECTURE | - | BOTTOM | BALL | 225 | 1 | 3.3V | - | - | 100MHz | 20 | 119 | - | - | 3.3V | - | - | INDUSTRIAL | - | Parallel | 3.465V | 3.135V | 512kB | 1 | 260mA | - | - | 5 ns | - | 3-STATE | - | 17b | 4.5 Mb | 0.045A | - | - | COMMON | Synchronous | 36b | - | - | - | 2.36mm | 14mm | 22mm | 2.15mm | No | RoHS Compliant | Contains Lead | ||
| 71V2556SA100BGI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип70T3599S133BFI8Anlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Dual 2.5V 4.5M-Bit 128K x 36 15ns/4.2ns 208-Pin CABGA T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | - | - | 208 | - | RAM, SRAM | Tape & Reel | 2009 | - | - | Active | - | - | - | - | 85°C | -40°C | - | - | - | - | - | - | - | - | - | 133MHz | - | - | - | - | 2.5V | - | - | - | - | Parallel | 2.6V | 2.4V | - | 2 | 450mA | - | - | 15 ns | - | - | - | 34b | 4.5 Mb | - | - | - | - | Synchronous | 36b | - | - | - | - | 15mm | 15mm | 1.4mm | No | RoHS Compliant | Contains Lead | ||
| 70T3599S133BFI8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип70V9289L7PRFAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Dual 3.3V 1M-Bit 64K x 16 18ns/7.5ns 128-Pin TQFP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | TQFP | - | 128 | 83MHz | RAM, SDR, SRAM | - | 2009 | e0 | no | Active | 3 (168 Hours) | 128 | - | Tin/Lead (Sn85Pb15) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | - | QUAD | GULL WING | 225 | 1 | 3.3V | 0.5mm | - | 45.45MHz | - | 128 | - | - | 3.3V | - | - | COMMERCIAL | - | Parallel | 3.6V | 3V | 128kB | 2 | 250mA | - | - | 7 ns | 64KX16 | 3-STATE | - | 32b | 1 Mb | - | - | - | COMMON | Synchronous | 16b | 3V | - | - | - | 20mm | 14mm | 1.4mm | No | RoHS Compliant | Contains Lead | ||
| 70V9289L7PRF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V2546S150BGAnlielectronics Тип | Integrated Device Technology (IDT) |
IC SRAM 4.5MBIT 150MHZ 119BGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | BGA | - | 119 | - | RAM, SRAM | - | 2007 | e0 | no | Active | 3 (168 Hours) | 119 | - | Tin/Lead (Sn63Pb37) | 70°C | 0°C | PIPELINED ARCHITECTURE | - | BOTTOM | BALL | 225 | 1 | 3.3V | - | - | 150MHz | 20 | 119 | - | - | 3.3V | - | - | COMMERCIAL | - | Parallel | 3.465V | 3.135V | - | 1 | 325mA | - | - | 3.8 ns | - | 3-STATE | - | 17b | 4.5 Mb | 0.04A | - | - | COMMON | Synchronous | 36b | - | - | - | 2.36mm | 14mm | 22mm | 2.15mm | No | RoHS Compliant | Contains Lead | ||
| 71V2546S150BG | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип7006L20JGIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Dual 5V 128K-Bit 16K x 8 20ns 68-Pin PLCC Tube
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | - | PLCC | YES | 68 | - | RAM, SDR, SRAM | - | 2009 | e3 | yes | Active | 3 (168 Hours) | 68 | EAR99 | Matte Tin (Sn) | 85°C | -40°C | - | - | QUAD | J BEND | 260 | 1 | 5V | - | - | - | - | 68 | - | - | 5V | - | - | INDUSTRIAL | - | Parallel | 5.5V | 4.5V | 16kB | 2 | - | - | - | 20 ns | 16KX8 | - | - | 28b | 128 kb | - | - | - | - | - | - | - | - | - | - | 24mm | 24mm | 3.63mm | No | RoHS Compliant | Lead Free | ||
| 7006L20JGI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип709289L9PFIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Dual 5V 1M-Bit 64K x 16 20ns/9ns 100-Pin TQFP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | TQFP | - | 100 | - | RAM, SDR, SRAM | Bulk | 2005 | e0 | no | Active | 3 (168 Hours) | 100 | - | Tin/Lead (Sn85Pb15) | 85°C | -40°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | - | QUAD | GULL WING | 240 | 1 | 5V | 0.5mm | - | 40MHz | 20 | 100 | - | - | 5V | - | 5V | INDUSTRIAL | - | Parallel | 5.5V | 4.5V | 128kB | 2 | 430mA | - | - | 9 ns | 64KX16 | 3-STATE | - | 32b | 1 Mb | 0.006A | - | - | COMMON | Synchronous | 16b | - | - | - | 1.6mm | 14mm | 14mm | 1.4mm | No | RoHS Compliant | Contains Lead | ||
| 709289L9PFI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V3556S166PFG8Anlielectronics Тип | Integrated Device Technology (IDT) |
SRAM 4M X36 3.3V I/O SLOW ZBT
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | Surface Mount | TQFP | - | 100 | 166MHz | RAM, SDR, SRAM | - | 2006 | e3 | yes | Active | 3 (168 Hours) | 100 | - | Matte Tin (Sn) - annealed | 70°C | 0°C | - | - | QUAD | GULL WING | 260 | 1 | 3.3V | 0.65mm | - | 166MHz | 30 | 100 | - | - | 3.3V | - | - | COMMERCIAL | - | Parallel | 3.465V | 3.135V | 512kB | 1 | 350mA | - | - | 3.5 ns | - | 3-STATE | - | 17b | 4.5 Mb | 0.04A | - | - | COMMON | Synchronous | 36b | - | - | - | - | 20mm | 14mm | 1.4mm | No | RoHS Compliant | Lead Free | ||
| 71V3556S166PFG8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип70T651S10BF8Anlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Dual 2.5V 9M-Bit 256K x 36 10ns 208-Pin CABGA T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | - | - | 208 | - | RAM, SRAM | Tape & Reel | 2009 | e0 | no | Active | 3 (168 Hours) | 208 | - | Tin/Lead (Sn63Pb37) | 70°C | 0°C | - | - | BOTTOM | BALL | 225 | 1 | 2.5V | 0.8mm | - | - | - | 208 | - | - | 2.5V | - | - | COMMERCIAL | - | Parallel | 2.6V | 2.4V | - | 2 | 405mA | - | - | 10 ns | - | 3-STATE | - | 18b | 9 Mb | 0.01A | - | - | COMMON | Asynchronous | 36b | - | - | - | 1.5mm | 15mm | 15mm | 1.4mm | No | RoHS Compliant | Contains Lead | ||
| 70T651S10BF8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип7134LA25PDGIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | - | PDIP | NO | 48 | - | RAM, SDR, SRAM | Bulk | 2013 | e3 | yes | Active | 1 (Unlimited) | 48 | EAR99 | MATTE TIN | 85°C | -40°C | - | 8542.32.00.41 | DUAL | THROUGH-HOLE | 260 | 1 | 5V | 2.54mm | - | - | - | 48 | - | - | - | - | 5V | INDUSTRIAL | - | Parallel | 5.5V | 4.5V | 4kB | 2 | - | - | 0.26mA | 25 ns | 4KX8 | 3-STATE | - | - | - | 0.004A | 32768 bit | - | COMMON | - | - | 2V | - | - | - | 61.7mm | 15.24mm | 3.8mm | No | RoHS Compliant | Lead Free | ||
| 7134LA25PDGI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип7130SA100PFAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Dual 5V 8K-Bit 1K x 8 100ns 64-Pin TQFP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | TQFP | - | 64 | - | RAM, SDR, SRAM | - | 2005 | e0 | no | Active | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | - | - | QUAD | GULL WING | 240 | 1 | 5V | 0.8mm | - | - | 20 | 64 | - | - | 5V | - | 5V | COMMERCIAL | - | Parallel | 5.5V | 4.5V | 1kB | 2 | 155mA | - | - | 100 ns | 1KX8 | 3-STATE | - | 10b | 8 kb | 0.015A | - | - | COMMON | Asynchronous | 8b | - | - | - | 1.6mm | 14mm | 14mm | 1.4mm | No | RoHS Compliant | Contains Lead | ||
| 7130SA100PF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип70V631S12BCIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Dual 3.3V 4.5M-Bit 256K x 18 12ns 256-Pin CABGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | - | - | 256 | - | RAM, SDR, SRAM | - | 2009 | e0 | no | Active | 3 (168 Hours) | 256 | - | Tin/Lead (Sn63Pb37) | 85°C | -40°C | - | - | BOTTOM | BALL | 225 | 1 | 3.3V | 1mm | - | - | - | 256 | - | - | 3.3V | - | - | INDUSTRIAL | - | Parallel | 3.45V | 3.15V | 512kB | 2 | 515mA | - | - | 12 ns | - | 3-STATE | - | 18b | 4.5 Mb | 0.015A | - | - | COMMON | Asynchronous | 18b | - | - | - | 1.7mm | 17mm | 17mm | 1.4mm | No | RoHS Compliant | Contains Lead | ||
| 70V631S12BCI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71421LA55JAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Dual 5V 16K-Bit 2K x 8 55ns 52-Pin PLCC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | PLCC | - | 52 | - | RAM, SDR, SRAM | - | 2008 | e0 | no | Active | 3 (168 Hours) | 52 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; BATTERY BACKUP | - | QUAD | J BEND | 225 | 1 | 5V | - | - | - | - | 52 | - | - | 5V | - | 5V | COMMERCIAL | - | Parallel | 5.5V | 4.5V | 2kB | 2 | 110mA | - | - | 55 ns | - | 3-STATE | - | 22b | 16 kb | 0.0015A | - | - | COMMON | Asynchronous | 8b | 2V | - | - | - | 19mm | 19mm | 3.63mm | No | RoHS Compliant | Contains Lead | ||
| 71421LA55J | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип7130LA20PFG8Anlielectronics Тип | Integrated Device Technology (IDT) |
SRAM 8K(1KX8)CMOS DUAL PT RAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | TQFP | - | 64 | - | RAM, SDR, SRAM | - | 2013 | - | - | Active | - | - | - | - | 70°C | 0°C | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 5V | - | - | - | - | Parallel | 5.5V | 4.5V | 1kB | 2 | 200mA | - | - | 20 ns | - | - | - | 10b | 8 kb | - | - | - | - | Asynchronous | 8b | - | - | - | - | 14mm | 14mm | 1.4mm | No | RoHS Compliant | Lead Free | ||
| 7130LA20PFG8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип70261L20PFGIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Dual 5V 256K-Bit 16K x 16 20ns 100-Pin TQFP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | TQFP | - | 100 | - | RAM, SDR, SRAM | - | 2009 | e3 | yes | Active | 3 (168 Hours) | 100 | EAR99 | Matte Tin (Sn) | 85°C | -40°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN; LOW POWER STANDBY MODE | - | QUAD | GULL WING | 260 | 1 | 5V | - | - | - | - | 100 | - | - | 5V | - | - | INDUSTRIAL | - | Parallel | 5.5V | 4.5V | 32kB | 2 | 315mA | - | - | 20 ns | 16KX16 | - | - | 28b | 256 kb | - | - | - | - | Asynchronous | 16b | - | - | - | - | 14mm | 14mm | 1.4mm | No | RoHS Compliant | Lead Free | ||
| 70261L20PFGI |
Индекс :
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