| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Mount | Package / Case | Surface Mount | Number of Pins | Frequency(Max) | Memory Types | Packaging | Published | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Supply Voltage | Terminal Pitch | Frequency | Time@Peak Reflow Temperature-Max (s) | Pin Count | Operating Supply Voltage | Power Supplies | Temperature Grade | Interface | Max Supply Voltage | Min Supply Voltage | Memory Size | Number of Ports | Nominal Supply Current | Max Supply Current | Access Time | Organization | Output Characteristics | Memory Width | Address Bus Width | Density | Standby Current-Max | I/O Type | Sync/Async | Word Size | Standby Voltage-Min | Height | Height Seated (Max) | Length | Width | Thickness | Radiation Hardening | RoHS Status | Lead Free |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. Тип70V9289L12PRFAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Dual 3.3V 1M-Bit 64K x 16 25ns/12ns 128-Pin TQFP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | TQFP | - | 128 | 83MHz | RAM, SDR, SRAM | - | 2009 | e0 | no | Active | 3 (168 Hours) | 128 | - | Tin/Lead (Sn85Pb15) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | QUAD | GULL WING | 225 | 1 | 3.3V | 0.5mm | 33.3MHz | - | 128 | 3.3V | - | COMMERCIAL | Parallel | 3.6V | 3V | 128kB | 2 | 200mA | - | 12 ns | 64KX16 | 3-STATE | - | 32b | 1 Mb | - | COMMON | Synchronous | 16b | 3V | - | - | 20mm | 14mm | 1.4mm | No | RoHS Compliant | Contains Lead | ||
| 70V9289L12PRF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип70T659S10BCIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Dual 2.5V 4.5M-Bit 128K x 36 10ns 256-Pin CABGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | - | - | 256 | - | RAM, SRAM | - | 2009 | e0 | no | Active | 3 (168 Hours) | 256 | - | Tin/Lead (Sn63Pb37) | 85°C | -40°C | - | BOTTOM | BALL | 225 | 1 | 2.5V | 1mm | - | 20 | 256 | 2.5V | - | INDUSTRIAL | Parallel | 2.6V | 2.4V | - | 2 | 445mA | - | 10 ns | - | 3-STATE | - | 34b | 4.5 Mb | - | COMMON | Asynchronous | 36b | - | - | 1.5mm | 17mm | 17mm | 1.4mm | No | RoHS Compliant | Contains Lead | ||
| 70T659S10BCI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V432S5PFGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 3.3V 1M-Bit 32K x 32 5ns 100-Pin TQFP Tube
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Surface Mount | TQFP | - | 100 | 100MHz | RAM, SDR, SRAM | - | 2013 | e3 | yes | Discontinued | 3 (168 Hours) | 100 | - | Matte Tin (Sn) - annealed | 70°C | 0°C | PIPELINED ARCHITECTURE | QUAD | GULL WING | 260 | 1 | 3.3V | 0.65mm | 100MHz | 30 | 100 | 3.3V | - | COMMERCIAL | Parallel | 3.63V | 3.135V | 128kB | 1 | 200mA | - | 5 ns | 32KX32 | 3-STATE | - | 15b | 1 Mb | - | COMMON | Synchronous | 32b | - | - | - | 20mm | 14mm | 1.4mm | No | RoHS Compliant | Lead Free | ||
| 71V432S5PFG | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип70V3379S4BCAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Dual 3.3V 576K-Bit 32K x 18 4.2ns 256-Pin CABGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | - | - | 256 | - | RAM, SRAM | - | 2009 | e0 | no | Active | 3 (168 Hours) | 256 | - | Tin/Lead (Sn63Pb37) | 70°C | 0°C | PIPELINED OUTPUT MODE; SELF TIMED WRITE CYCLE | BOTTOM | BALL | 225 | 1 | 3.3V | 1mm | 133MHz | - | 256 | 3.3V | - | COMMERCIAL | Parallel | 3.45V | 3.15V | - | 2 | 460mA | - | 4.2 ns | - | 3-STATE | - | 30b | 576 kb | 0.015A | COMMON | Synchronous | 18b | - | - | - | 17mm | 17mm | 1.4mm | No | RoHS Compliant | Contains Lead | ||
| 70V3379S4BC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V3578S133PFGIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 3.3V 4.5M-Bit 256K x 18 4.2ns 100-Pin TQFP Tray
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | Surface Mount | TQFP | - | 100 | 133MHz | RAM, SDR, SRAM | - | 2012 | e3 | yes | Active | 3 (168 Hours) | 100 | - | Matte Tin (Sn) - annealed | 85°C | -40°C | PIPELINED ARCHITECTURE | QUAD | FLAT | 260 | 1 | 3.3V | 0.65mm | 133MHz | 30 | 100 | 3.3V | - | INDUSTRIAL | Parallel | 3.465V | 3.135V | 512kB | 1 | 260mA | - | 4.2 ns | - | 3-STATE | - | 18b | 4.5 Mb | 0.035A | COMMON | Synchronous | 18b | - | - | - | 20mm | 14mm | 1.4mm | No | RoHS Compliant | Lead Free | ||
| 71V3578S133PFGI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V124SA15PHG8Anlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Single 3.3V 1M-Bit 128K x 8 15ns 32-Pin TSOP-II T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | SOIC | - | 32 | - | RAM, SDR, SRAM - Asynchronous | Tape & Reel | 2013 | e3 | yes | Active | 3 (168 Hours) | 32 | - | Matte Tin (Sn) - annealed | 70°C | 0°C | - | DUAL | GULL WING | 260 | 1 | 3.3V | - | - | 30 | 32 | 3.3V | - | COMMERCIAL | Parallel | 3.6V | 3V | 128kB | 1 | 100mA | - | 15 ns | - | 3-STATE | - | 17b | 1 Mb | - | COMMON | Asynchronous | 8b | 3V | - | - | 20.95mm | 10.16mm | 1mm | No | RoHS Compliant | Lead Free | ||
| 71V124SA15PHG8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V424L10YG8Anlielectronics Тип | Integrated Device Technology (IDT) |
SRAM 512Kx8 ASYNCHRONOUS 3.3V CMOS SRAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | - | YES | 36 | - | RAM, SDR, SRAM - Asynchronous | - | 2009 | e3 | yes | Active | 3 (168 Hours) | 36 | - | Matte Tin (Sn) - annealed | 70°C | 0°C | - | DUAL | J BEND | 260 | 1 | 3.3V | - | - | - | 36 | 3.3V | - | COMMERCIAL | Parallel | 3.6V | 3V | 512kB | 1 | - | - | 10 ns | - | 3-STATE | - | 19b | 4 Mb | - | COMMON | - | - | 3V | - | 3.683mm | 23.4mm | 10.2mm | 2.2mm | No | RoHS Compliant | Lead Free | ||
| 71V424L10YG8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип70V3569S5BCIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Dual 3.3V 576K-Bit 16K x 36 5ns 256-Pin CABGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | - | - | 256 | - | RAM, SRAM | - | 2008 | e0 | no | Active | 3 (168 Hours) | 256 | - | Tin/Lead (Sn63Pb37) | 85°C | -40°C | - | BOTTOM | BALL | 225 | 1 | 3.3V | 1mm | 100MHz | - | 256 | 3.3V | - | INDUSTRIAL | Parallel | 3.45V | 3.15V | - | 2 | 415mA | - | 5 ns | 16KX36 | 3-STATE | - | 14b | 576 kb | 0.03A | COMMON | Synchronous | 36b | - | - | 1.5mm | 17mm | 17mm | 1.4mm | No | RoHS Compliant | Contains Lead | ||
| 70V3569S5BCI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71T75802S200BGGI8Anlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 2.5V 18M-Bit 1M x 18 3.2ns 119-Pin BGA T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Surface Mount | BGA | - | 119 | - | RAM, SRAM | Tape & Reel | 2012 | e1 | - | - | 3 (168 Hours) | 119 | - | Tin/Silver/Copper (Sn/Ag/Cu) | 85°C | -40°C | PIPELINED ARCHITECTURE | BOTTOM | BALL | - | 1 | 2.5V | - | 200MHz | - | - | 2.5V | - | INDUSTRIAL | Parallel | 2.625V | 2.375V | - | 1 | 295mA | - | 3.2 ns | - | 3-STATE | 18 | 20b | 18 Mb | 0.06A | COMMON | Synchronous | 18b | 2.38V | - | 2.36mm | 22mm | - | - | No | RoHS Compliant | - | ||
| 71T75802S200BGGI8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип70V631S12BFGIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Dual 3.3V 4.5M-Bit 256K x 18 12ns 208-Pin CABGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | - | - | 208 | - | RAM, SDR, SRAM | - | 2009 | e1 | yes | Active | 3 (168 Hours) | 208 | - | Tin/Silver/Copper (Sn/Ag/Cu) | 85°C | -40°C | - | BOTTOM | BALL | 260 | 1 | 3.3V | 0.8mm | - | 30 | 208 | 3.3V | - | INDUSTRIAL | Parallel | 3.45V | 3.15V | 512kB | 2 | 515mA | - | 12 ns | - | 3-STATE | - | 18b | 4.5 Mb | 0.015A | COMMON | Asynchronous | 18b | - | - | 1.7mm | 15mm | 15mm | 1.4mm | No | RoHS Compliant | Lead Free | ||
| 70V631S12BFGI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип70V3579S6BFAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Dual 3.3V 1.125M-Bit 32K x 36 6ns 208-Pin CABGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | - | - | 208 | - | RAM, SDR, SRAM | Bulk | 2009 | e0 | no | Active | 3 (168 Hours) | 208 | - | Tin/Lead (Sn63Pb37) | 70°C | 0°C | - | BOTTOM | BALL | 225 | 1 | 3.3V | 0.8mm | 83MHz | 20 | 208 | 3.3V | - | COMMERCIAL | Parallel | 3.45V | 3.15V | 128kB | 2 | 310mA | - | 12 ns | - | 3-STATE | - | 30b | 1.1 Mb | - | COMMON | Synchronous | 36b | - | - | - | 15mm | 15mm | 1.4mm | No | RoHS Compliant | Contains Lead | ||
| 70V3579S6BF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V67603S133BGGIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 3.3V 9M-Bit 256K x 36 4.2ns 119-Pin BGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | - | BGA | YES | 119 | 133MHz | RAM, SDR, SRAM | - | 2009 | e1 | yes | Active | 3 (168 Hours) | 119 | - | Tin/Silver/Copper (Sn/Ag/Cu) | 85°C | -40°C | PIPELINED ARCHITECTURE | BOTTOM | BALL | 260 | 1 | 3.3V | - | 133MHz | 30 | 119 | 3.3V | - | INDUSTRIAL | Parallel | 3.465V | 3.135V | 1.1MB | 1 | - | 280mA | 4.2 ns | 256KX36 | 3-STATE | - | 18b | 9 Mb | 0.07A | COMMON | - | - | - | 2.15mm | - | 14mm | 22mm | 2.15mm | No | RoHS Compliant | Lead Free | ||
| 71V67603S133BGGI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V124SA15TYG8Anlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Single 3.3V 1M-Bit 128K x 8 15ns 32-Pin SOJ T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | - | - | 32 | - | RAM, SDR, SRAM - Asynchronous | Tape & Reel | 2013 | e3 | yes | Active | 3 (168 Hours) | 32 | - | Matte Tin (Sn) - annealed | 70°C | 0°C | - | DUAL | J BEND | 260 | 1 | 3.3V | - | - | - | 32 | 3.3V | - | COMMERCIAL | Parallel | 3.6V | 3V | 128kB | 1 | 100mA | - | 15 ns | - | 3-STATE | - | 17b | 1 Mb | - | COMMON | Asynchronous | 8b | 3V | - | 3.7592mm | 21.95mm | 7.6mm | 2.67mm | No | RoHS Compliant | Lead Free | ||
| 71V124SA15TYG8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип70T659S12BCIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Dual 2.5V 4.5M-Bit 128K x 36 12ns 256-Pin CABGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | - | - | 256 | - | RAM, SRAM | - | 2009 | e0 | no | Active | 3 (168 Hours) | 256 | - | Tin/Lead (Sn63Pb37) | 85°C | -40°C | - | BOTTOM | BALL | 225 | 1 | 2.5V | 1mm | - | 20 | 256 | 2.5V | - | INDUSTRIAL | Parallel | 2.6V | 2.4V | - | 2 | 395mA | - | 12 ns | - | 3-STATE | - | 34b | 4.5 Mb | - | COMMON | Asynchronous | 36b | - | - | 1.5mm | 17mm | 17mm | 1.4mm | No | RoHS Compliant | Contains Lead | ||
| 70T659S12BCI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71T75602S133BGIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 2.5V 18M-Bit 512K x 36 4.2ns 119-Pin BGA Tube/Tray
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Surface Mount | BGA | - | 119 | 133MHz | RAM, SDR, SRAM | - | 2012 | e0 | no | Active | 3 (168 Hours) | 119 | - | Tin/Lead (Sn63Pb37) | 85°C | -40°C | PIPELINED ARCHITECTURE | BOTTOM | BALL | 225 | 1 | 2.5V | - | 133MHz | - | 119 | 2.5V | - | INDUSTRIAL | Parallel | 2.625V | 2.375V | 2.3MB | 1 | 215mA | - | 4.2 ns | - | 3-STATE | - | 19b | 18 Mb | 0.06A | COMMON | Synchronous | 36b | 2.38V | - | 2.36mm | 14mm | 22mm | 2.15mm | No | RoHS Compliant | Contains Lead | ||
| 71T75602S133BGI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V632S6PFGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 3.3V 2M-Bit 64K x 32 6ns 100-Pin TQFP Tray
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Surface Mount | TQFP | - | 100 | 83MHz | RAM, SDR, SRAM | - | 2015 | e3 | yes | Discontinued | 3 (168 Hours) | 100 | - | Matte Tin (Sn) - annealed | 70°C | 0°C | ALSO REQUIRES 3.3V I/O SUPPLY | QUAD | GULL WING | 260 | 1 | 3.3V | 0.65mm | 83MHz | 30 | 100 | 3.3V | - | INDUSTRIAL | Parallel | 3.63V | 3.135V | 256kB | 1 | 180mA | - | 6 ns | 64KX32 | 3-STATE | - | 16b | 2 Mb | - | COMMON | Synchronous | 32b | - | - | - | 20mm | 14mm | 1.4mm | No | RoHS Compliant | Lead Free | ||
| 71V632S6PFG | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип70V631S15BC8Anlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Dual 3.3V 4.5M-Bit 256K x 18 15ns 256-Pin CABGA T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | - | - | 256 | - | RAM, SRAM | Tape & Reel | 2009 | e0 | no | Active | 3 (168 Hours) | 256 | - | Tin/Lead (Sn63Pb37) | 70°C | 0°C | - | BOTTOM | BALL | 225 | 1 | 3.3V | 1mm | - | - | 256 | 3.3V | - | COMMERCIAL | Parallel | 3.45V | 3.15V | - | 2 | 440mA | - | 15 ns | - | 3-STATE | - | 18b | 4.5 Mb | 0.015A | COMMON | Asynchronous | 18b | - | - | 1.7mm | 17mm | 17mm | 1.4mm | No | RoHS Compliant | Contains Lead | ||
| 70V631S15BC8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71T75902S75BGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 2.5V 18M-Bit 1M x 18 7.5ns 119-Pin BGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Surface Mount | BGA | - | 119 | 100MHz | RAM, SDR, SRAM | - | 2005 | e0 | no | Active | 3 (168 Hours) | 119 | - | Tin/Lead (Sn63Pb37) | 70°C | 0°C | FLOW-THROUGH ARCHITECTURE | BOTTOM | BALL | 225 | 1 | 2.5V | - | 100MHz | 20 | 119 | 2.5V | - | COMMERCIAL | Parallel | 2.625V | 2.375V | 2.3MB | 1 | 275mA | - | 7.5 ns | - | 3-STATE | - | 20b | 18 Mb | 0.04A | COMMON | Synchronous | 18b | 2.38V | - | 2.36mm | 14mm | 22mm | 2.15mm | No | RoHS Compliant | Contains Lead | ||
| 71T75902S75BG | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71T75602S166BGIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 2.5V 18M-Bit 512K x 36 3.5ns 119-Pin BGA Tube/Tray
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Surface Mount | BGA | - | 119 | 166MHz | RAM, SDR, SRAM | - | 2012 | e0 | no | Active | 3 (168 Hours) | 119 | - | Tin/Lead (Sn63Pb37) | 85°C | -40°C | PIPELINED ARCHITECTURE | BOTTOM | BALL | 225 | 1 | 2.5V | - | 166MHz | - | 119 | 2.5V | - | INDUSTRIAL | Parallel | 2.625V | 2.375V | 2.3MB | 1 | 265mA | - | 3.5 ns | - | 3-STATE | - | 19b | 18 Mb | 0.06A | COMMON | Synchronous | 36b | 2.38V | - | 2.36mm | 14mm | 22mm | 2.15mm | No | RoHS Compliant | Contains Lead | ||
| 71T75602S166BGI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71321LA25PFAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Dual 5V 16K-Bit 2K x 8 25ns 64-Pin TQFP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | TQFP | - | 64 | - | RAM, SDR, SRAM | - | 2005 | e0 | no | Active | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; BATTERY BACKUP | QUAD | GULL WING | 240 | 1 | 5V | 0.8mm | - | 20 | 64 | 5V | 5V | COMMERCIAL | Parallel | 5.5V | 4.5V | 2kB | 2 | 170mA | - | 25 ns | - | 3-STATE | - | 22b | 16 kb | 0.0015A | COMMON | Asynchronous | 8b | 2V | - | 1.6mm | 14mm | 14mm | 1.4mm | No | RoHS Compliant | Contains Lead | ||
| 71321LA25PF |
Индекс :
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