| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Mount | Package / Case | Surface Mount | Number of Pins | Frequency(Max) | Memory Types | Usage Level | Packaging | Published | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Supply Voltage | Terminal Pitch | Frequency | Time@Peak Reflow Temperature-Max (s) | Pin Count | Operating Supply Voltage | Power Supplies | Temperature Grade | Interface | Max Supply Voltage | Min Supply Voltage | Memory Size | Number of Ports | Nominal Supply Current | Max Supply Current | Access Time | Organization | Output Characteristics | Address Bus Width | Density | Standby Current-Max | Screening Level | I/O Type | Sync/Async | Word Size | Standby Voltage-Min | Height | Height Seated (Max) | Length | Width | Thickness | Radiation Hardening | RoHS Status | Lead Free |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. Тип71V3557S75BG8Anlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 3.3V 4.5M-Bit 128K x 36 7.5ns 119-Pin BGA T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | BGA | - | 119 | 100MHz | RAM, SDR, SRAM | - | Tape & Reel | 2009 | e0 | no | Active | 3 (168 Hours) | 119 | - | Tin/Lead (Sn63Pb37) | 70°C | 0°C | FLOW-THROUGH ARCHITECTURE | BOTTOM | BALL | 225 | 1 | 3.3V | - | 100MHz | 20 | 119 | 3.3V | - | COMMERCIAL | Parallel | 3.465V | 3.135V | 512kB | 1 | 275mA | - | 7.5 ns | - | 3-STATE | 17b | 4.5 Mb | 0.04A | - | COMMON | Synchronous | 36b | - | - | 2.36mm | 14mm | 22mm | 2.15mm | No | RoHS Compliant | Contains Lead | ||
| 71V3557S75BG8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип7006L55PFIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM 16K X 8 DUAL PORT SRAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | TQFP | - | 64 | - | RAM, SDR, SRAM | - | - | 2008 | e0 | no | Active | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 85°C | -40°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | QUAD | GULL WING | 240 | 1 | 5V | 0.8mm | - | 20 | 64 | 5V | 5V | INDUSTRIAL | Parallel | 5.5V | 4.5V | 16kB | 2 | 250mA | - | 55 ns | 16KX8 | 3-STATE | 28b | 128 kb | 0.004A | - | COMMON | Asynchronous | 8b | 2V | - | 1.6mm | 14mm | 14mm | 1.4mm | No | RoHS Compliant | Contains Lead | ||
| 7006L55PFI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V016SA12BFG8Anlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Single 3.3V 1M-Bit 64K x 16 12ns 48-Pin CABGA T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | Surface Mount | - | - | 48 | - | RAM, SDR, SRAM - Asynchronous | - | Tape & Reel | 2011 | e1 | yes | Active | 3 (168 Hours) | 48 | - | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | - | BOTTOM | BALL | 260 | 1 | 3.3V | 0.75mm | - | 30 | 48 | 3.3V | - | COMMERCIAL | Parallel | 3.6V | 3V | 128kB | 1 | 150mA | - | 12 ns | - | 3-STATE | 16b | 1 Mb | - | - | COMMON | Asynchronous | 16b | 3V | - | - | 7mm | 7mm | 1.4mm | No | RoHS Compliant | Lead Free | ||
| 71V016SA12BFG8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип70V3579S6DRAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Dual 3.3V 1.125M-Bit 32K x 36 6ns 208-Pin PQFP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | PQFP | - | 208 | - | RAM, SDR, SRAM | - | - | 2009 | e0 | no | Active | 3 (168 Hours) | 208 | - | Tin/Lead (Sn/Pb) | 70°C | 0°C | - | QUAD | GULL WING | 225 | 1 | 3.3V | 0.5mm | 83MHz | - | 208 | 3.3V | - | COMMERCIAL | Parallel | 3.45V | 3.15V | 128kB | 2 | 310mA | - | 12 ns | - | 3-STATE | 15b | 1.1 Mb | - | - | COMMON | Synchronous | 36b | - | - | - | 28mm | 28mm | 3.5mm | No | RoHS Compliant | Contains Lead | ||
| 70V3579S6DR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V321S25PFAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Dual 3.3V 16K-Bit 2K x 8 25ns 64-Pin TQFP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | TQFP | - | 64 | - | RAM, SDR, SRAM | - | - | 2009 | e0 | no | Active | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | BATTERY BACKUP OPERATION | QUAD | GULL WING | 240 | 1 | 3.3V | 0.8mm | - | 20 | 64 | 3.3V | - | INDUSTRIAL | Parallel | 3.6V | 3V | 2kB | 2 | 130mA | - | 25 ns | - | 3-STATE | 22b | 16 kb | 0.005A | - | COMMON | Asynchronous | 8b | 3V | - | 1.6mm | 14mm | 14mm | 1.4mm | No | RoHS Compliant | Contains Lead | ||
| 71V321S25PF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип70V3579S6BFAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Dual 3.3V 1.125M-Bit 32K x 36 6ns 208-Pin CABGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | - | - | 208 | - | RAM, SDR, SRAM | - | Bulk | 2009 | e0 | no | Active | 3 (168 Hours) | 208 | - | Tin/Lead (Sn63Pb37) | 70°C | 0°C | - | BOTTOM | BALL | 225 | 1 | 3.3V | 0.8mm | 83MHz | 20 | 208 | 3.3V | - | COMMERCIAL | Parallel | 3.45V | 3.15V | 128kB | 2 | 310mA | - | 12 ns | - | 3-STATE | 30b | 1.1 Mb | - | - | COMMON | Synchronous | 36b | - | - | - | 15mm | 15mm | 1.4mm | No | RoHS Compliant | Contains Lead | ||
| 70V3579S6BF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V67603S133BGGIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 3.3V 9M-Bit 256K x 36 4.2ns 119-Pin BGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | - | BGA | YES | 119 | 133MHz | RAM, SDR, SRAM | - | - | 2009 | e1 | yes | Active | 3 (168 Hours) | 119 | - | Tin/Silver/Copper (Sn/Ag/Cu) | 85°C | -40°C | PIPELINED ARCHITECTURE | BOTTOM | BALL | 260 | 1 | 3.3V | - | 133MHz | 30 | 119 | 3.3V | - | INDUSTRIAL | Parallel | 3.465V | 3.135V | 1.1MB | 1 | - | 280mA | 4.2 ns | 256KX36 | 3-STATE | 18b | 9 Mb | 0.07A | - | COMMON | - | - | - | 2.15mm | - | 14mm | 22mm | 2.15mm | No | RoHS Compliant | Lead Free | ||
| 71V67603S133BGGI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип70V3319S133BC8Anlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Dual 3.3V 4.5M-Bit 256K x 18 15ns/4.2ns 256-Pin CABGA T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | - | - | 256 | - | RAM, SRAM | - | Tape & Reel | 2009 | e0 | no | Active | 3 (168 Hours) | 256 | - | Tin/Lead (Sn63Pb37) | 70°C | 0°C | PIPELINED OR FLOW-THROUGH ARCHITECTURE | BOTTOM | BALL | 225 | 1 | 3.3V | 1mm | 133MHz | - | 256 | 3.3V | - | COMMERCIAL | Parallel | 3.45V | 3.15V | - | 2 | 400mA | - | 15 ns | - | 3-STATE | 36b | 4.5 Mb | 0.03A | - | COMMON | Synchronous | 18b | - | - | 1.7mm | 17mm | 17mm | 1.4mm | No | RoHS Compliant | Contains Lead | ||
| 70V3319S133BC8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип70V06L20PFGIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Dual 3.3V 128K-Bit 16K x 8 20ns 64-Pin TQFP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | TQFP | - | 64 | - | RAM, SDR, SRAM | - | Bulk | 2008 | e3 | yes | Active | 3 (168 Hours) | 64 | EAR99 | MATTE TIN | 85°C | -40°C | - | QUAD | GULL WING | 260 | 1 | 3.3V | 0.8mm | - | 30 | 64 | 3.3V | - | INDUSTRIAL | Parallel | 3.6V | 3V | 16kB | 2 | 195mA | - | 20 ns | 16KX8 | - | 28b | 128 kb | - | - | - | Asynchronous | 8b | - | - | 1.6mm | 14mm | 14mm | 1.4mm | No | RoHS Compliant | Lead Free | ||
| 70V06L20PFGI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип70V06L20PFGI8Anlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Dual 3.3V 128K-Bit 16K x 8 20ns 64-Pin TQFP T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | - | TQFP | YES | 64 | - | RAM, SDR, SRAM | - | - | 2000 | e3 | yes | Active | 3 (168 Hours) | 64 | EAR99 | MATTE TIN | 85°C | -40°C | - | QUAD | GULL WING | 260 | 1 | 3.3V | 0.8mm | - | 30 | 64 | 3.3V | - | INDUSTRIAL | Parallel | 3.6V | 3V | 16kB | 2 | - | - | 20 ns | 16KX8 | - | 28b | 128 kb | - | - | - | - | - | - | - | 1.6mm | 14mm | 14mm | 1.4mm | No | RoHS Compliant | Lead Free | ||
| 70V06L20PFGI8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип7005S55JIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Dual 5V 64K-Bit 8K x 8 55ns 68-Pin PLCC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | PLCC | - | 68 | - | RAM, SDR, SRAM | - | - | 2005 | e0 | no | Active | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 85°C | -40°C | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE | QUAD | J BEND | 225 | 1 | 5V | - | - | - | 68 | 5V | 5V | INDUSTRIAL | Parallel | 5.5V | 4.5V | 8kB | 2 | 300mA | - | 55 ns | 8KX8 | 3-STATE | 26b | 64 kb | 0.03A | - | COMMON | Asynchronous | 8b | - | - | - | 24mm | 24mm | 3.63mm | No | RoHS Compliant | Contains Lead | ||
| 7005S55JI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V632S6PFGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 3.3V 2M-Bit 64K x 32 6ns 100-Pin TQFP Tray
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Surface Mount | TQFP | - | 100 | 83MHz | RAM, SDR, SRAM | - | - | 2015 | e3 | yes | Discontinued | 3 (168 Hours) | 100 | - | Matte Tin (Sn) - annealed | 70°C | 0°C | ALSO REQUIRES 3.3V I/O SUPPLY | QUAD | GULL WING | 260 | 1 | 3.3V | 0.65mm | 83MHz | 30 | 100 | 3.3V | - | INDUSTRIAL | Parallel | 3.63V | 3.135V | 256kB | 1 | 180mA | - | 6 ns | 64KX32 | 3-STATE | 16b | 2 Mb | - | - | COMMON | Synchronous | 32b | - | - | - | 20mm | 14mm | 1.4mm | No | RoHS Compliant | Lead Free | ||
| 71V632S6PFG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71256L45DBAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM 32Kx8 ASYNCHRONOUS 5.0V STATIC RAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | - | CDIP | NO | 28 | - | RAM, SDR, SRAM - Asynchronous | Military grade | - | 2011 | e0 | no | Active | 1 (Unlimited) | 28 | - | Tin/Lead (Sn63Pb37) | 125°C | -55°C | - | DUAL | THROUGH-HOLE | 240 | 1 | 5V | 2.54mm | - | - | 28 | 5V | 5V | MILITARY | Parallel | 5.5V | 4.5V | 32kB | 1 | - | - | 45 ns | 32KX8 | 3-STATE | 15b | 256 kb | 0.0005A | MIL-STD-883 Class B | COMMON | - | - | 2V | - | 5.08mm | 37.2mm | 15.24mm | 1.65mm | No | RoHS Compliant | Contains Lead | ||
| 71256L45DB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V3558S100PFGIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 3.3V 4.5M-Bit 256K x 18 5ns 100-Pin TQFP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | Surface Mount | TQFP | - | 100 | 100MHz | RAM, SDR, SRAM | - | - | 2006 | e3 | yes | Active | 3 (168 Hours) | 100 | - | Matte Tin (Sn) - annealed | 85°C | -40°C | - | QUAD | GULL WING | 260 | 1 | 3.3V | 0.65mm | 100MHz | 30 | 100 | 3.3V | - | INDUSTRIAL | Parallel | 3.465V | 3.135V | 512kB | 1 | 255mA | - | 5 ns | - | 3-STATE | 18b | 4.5 Mb | 0.045A | - | COMMON | Synchronous | 18b | - | - | - | 20mm | 14mm | 1.4mm | No | RoHS Compliant | Lead Free | ||
| 71V3558S100PFGI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V67803S133BGGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 3.3V 9M-Bit 512K x 18 4.2ns 119-Pin BGA Tube
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | BGA | - | 119 | 133MHz | RAM, SDR, SRAM | - | - | 2009 | e1 | yes | Active | 3 (168 Hours) | 119 | - | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | PIPELINED ARCHITECTURE | BOTTOM | BALL | 260 | 1 | 3.3V | - | 133MHz | 30 | 119 | 3.3V | - | COMMERCIAL | Parallel | 3.465V | 3.135V | 1.1MB | 1 | 260mA | - | 4.2 ns | - | 3-STATE | 19b | 9 Mb | 0.05A | - | COMMON | Synchronous | 18b | - | - | 2.36mm | 14mm | 22mm | 2.15mm | No | RoHS Compliant | Lead Free | ||
| 71V67803S133BGG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип70T659S12BCIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Dual 2.5V 4.5M-Bit 128K x 36 12ns 256-Pin CABGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | - | - | 256 | - | RAM, SRAM | - | - | 2009 | e0 | no | Active | 3 (168 Hours) | 256 | - | Tin/Lead (Sn63Pb37) | 85°C | -40°C | - | BOTTOM | BALL | 225 | 1 | 2.5V | 1mm | - | 20 | 256 | 2.5V | - | INDUSTRIAL | Parallel | 2.6V | 2.4V | - | 2 | 395mA | - | 12 ns | - | 3-STATE | 34b | 4.5 Mb | - | - | COMMON | Asynchronous | 36b | - | - | 1.5mm | 17mm | 17mm | 1.4mm | No | RoHS Compliant | Contains Lead | ||
| 70T659S12BCI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71321LA25PFAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Dual 5V 16K-Bit 2K x 8 25ns 64-Pin TQFP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | TQFP | - | 64 | - | RAM, SDR, SRAM | - | - | 2005 | e0 | no | Active | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; BATTERY BACKUP | QUAD | GULL WING | 240 | 1 | 5V | 0.8mm | - | 20 | 64 | 5V | 5V | COMMERCIAL | Parallel | 5.5V | 4.5V | 2kB | 2 | 170mA | - | 25 ns | - | 3-STATE | 22b | 16 kb | 0.0015A | - | COMMON | Asynchronous | 8b | 2V | - | 1.6mm | 14mm | 14mm | 1.4mm | No | RoHS Compliant | Contains Lead | ||
| 71321LA25PF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип70V639S12BFGIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Dual 3.3V 2.25M-Bit 128K x 18 12ns 208-Pin CABGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | Surface Mount | - | - | 208 | - | RAM, SDR, SRAM | - | - | 2009 | e1 | yes | Active | 3 (168 Hours) | 208 | - | Tin/Silver/Copper (Sn/Ag/Cu) | 85°C | -40°C | - | BOTTOM | BALL | 260 | 1 | 3.3V | 0.8mm | - | 30 | 208 | 3.3V | - | INDUSTRIAL | Parallel | 3.45V | 3.15V | 256kB | 2 | 515mA | - | 12 ns | - | 3-STATE | 34b | 2.3 Mb | 0.015A | - | COMMON | Asynchronous | 18b | - | - | 1.7mm | 15mm | 15mm | 1.4mm | No | RoHS Compliant | Lead Free | ||
| 70V639S12BFGI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71T75802S100BGIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 2.5V 18M-Bit 1M x 18 5ns 119-Pin BGA Tube/Tray
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Surface Mount | BGA | - | 119 | - | RAM, SRAM | - | - | 2012 | e0 | no | Active | 3 (168 Hours) | 119 | - | Tin/Lead (Sn63Pb37) | 85°C | -40°C | PIPELINED ARCHITECTURE | BOTTOM | BALL | 225 | 1 | 2.5V | - | 100MHz | - | 119 | 2.5V | - | INDUSTRIAL | Parallel | 2.625V | 2.375V | - | 1 | 195mA | - | 5 ns | - | 3-STATE | 20b | 18 Mb | 0.045A | - | COMMON | Synchronous | 18b | 2.38V | - | 2.36mm | 14mm | 22mm | 2.15mm | No | RoHS Compliant | Contains Lead | ||
| 71T75802S100BGI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип70261L20PFIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM 256K(16K X 16) W/INT PORT
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | TQFP | - | 100 | - | RAM, SDR, SRAM | - | - | 2009 | e0 | no | Active | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 85°C | -40°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN; LOW POWER STANDBY MODE | QUAD | GULL WING | 240 | 1 | 5V | 0.5mm | - | 20 | 100 | 5V | 5V | INDUSTRIAL | Parallel | 5.5V | 4.5V | 32kB | 2 | 315mA | - | 20 ns | 16KX16 | 3-STATE | 28b | 256 kb | 0.01A | - | COMMON | Asynchronous | 16b | - | - | 1.6mm | 14mm | 14mm | 1.4mm | No | RoHS Compliant | Contains Lead | ||
| 70261L20PFI |
Индекс :
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