| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Mount | Package / Case | Surface Mount | Number of Pins | Frequency(Max) | Memory Types | Packaging | Published | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Supply Voltage | Terminal Pitch | Frequency | Time@Peak Reflow Temperature-Max (s) | Pin Count | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Interface | Max Supply Voltage | Min Supply Voltage | Memory Size | Number of Ports | Nominal Supply Current | Max Supply Current | Clock Frequency | Supply Current-Max | Access Time | Organization | Output Characteristics | Address Bus Width | Density | Standby Current-Max | Access Time (Max) | I/O Type | Sync/Async | Word Size | Standby Voltage-Min | Height | Height Seated (Max) | Length | Width | Thickness | Radiation Hardening | RoHS Status | Lead Free |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. Тип7007S55JIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Dual 5V 256K-Bit 32K x 8 55ns 68-Pin PLCC Tube
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | PLCC | - | 68 | - | RAM, SDR, SRAM | - | 2010 | e0 | no | Active | 3 (168 Hours) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 85°C | -40°C | - | QUAD | J BEND | 225 | 1 | 5V | - | - | - | 68 | 5V | - | 5V | INDUSTRIAL | - | Parallel | 5.5V | 4.5V | 32kB | 2 | 310mA | - | - | - | 55 ns | - | 3-STATE | 30b | 256 kb | 0.03A | - | COMMON | Asynchronous | 8b | - | - | - | 24mm | 24mm | 3.63mm | No | RoHS Compliant | Contains Lead | ||
| 7007S55JI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71T75602S133BGIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 2.5V 18M-Bit 512K x 36 4.2ns 119-Pin BGA Tube/Tray
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Surface Mount | BGA | - | 119 | 133MHz | RAM, SDR, SRAM | - | 2012 | e0 | no | Active | 3 (168 Hours) | 119 | - | Tin/Lead (Sn63Pb37) | 85°C | -40°C | PIPELINED ARCHITECTURE | BOTTOM | BALL | 225 | 1 | 2.5V | - | 133MHz | - | 119 | 2.5V | - | - | INDUSTRIAL | - | Parallel | 2.625V | 2.375V | 2.3MB | 1 | 215mA | - | - | - | 4.2 ns | - | 3-STATE | 19b | 18 Mb | 0.06A | - | COMMON | Synchronous | 36b | 2.38V | - | 2.36mm | 14mm | 22mm | 2.15mm | No | RoHS Compliant | Contains Lead | ||
| 71T75602S133BGI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71T75902S75BGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 2.5V 18M-Bit 1M x 18 7.5ns 119-Pin BGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Surface Mount | BGA | - | 119 | 100MHz | RAM, SDR, SRAM | - | 2005 | e0 | no | Active | 3 (168 Hours) | 119 | - | Tin/Lead (Sn63Pb37) | 70°C | 0°C | FLOW-THROUGH ARCHITECTURE | BOTTOM | BALL | 225 | 1 | 2.5V | - | 100MHz | 20 | 119 | 2.5V | - | - | COMMERCIAL | - | Parallel | 2.625V | 2.375V | 2.3MB | 1 | 275mA | - | - | - | 7.5 ns | - | 3-STATE | 20b | 18 Mb | 0.04A | - | COMMON | Synchronous | 18b | 2.38V | - | 2.36mm | 14mm | 22mm | 2.15mm | No | RoHS Compliant | Contains Lead | ||
| 71T75902S75BG | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71T75602S166BGIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 2.5V 18M-Bit 512K x 36 3.5ns 119-Pin BGA Tube/Tray
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Surface Mount | BGA | - | 119 | 166MHz | RAM, SDR, SRAM | - | 2012 | e0 | no | Active | 3 (168 Hours) | 119 | - | Tin/Lead (Sn63Pb37) | 85°C | -40°C | PIPELINED ARCHITECTURE | BOTTOM | BALL | 225 | 1 | 2.5V | - | 166MHz | - | 119 | 2.5V | - | - | INDUSTRIAL | - | Parallel | 2.625V | 2.375V | 2.3MB | 1 | 265mA | - | - | - | 3.5 ns | - | 3-STATE | 19b | 18 Mb | 0.06A | - | COMMON | Synchronous | 36b | 2.38V | - | 2.36mm | 14mm | 22mm | 2.15mm | No | RoHS Compliant | Contains Lead | ||
| 71T75602S166BGI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип70V25L15PFGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM 8Kx16, 3.3V DUAL- PORT RAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | TQFP | - | 100 | - | RAM, SDR, SRAM | - | 2008 | e3 | yes | Active | 3 (168 Hours) | 100 | EAR99 | Matte Tin (Sn) - annealed | 70°C | 0°C | - | QUAD | GULL WING | 260 | 1 | 3.3V | 0.5mm | - | 30 | 100 | 3.3V | - | - | COMMERCIAL | - | Parallel | 3.6V | 3V | 16kB | 2 | 185mA | - | - | - | 15 ns | 8KX16 | 3-STATE | 26b | 128 kb | - | - | COMMON | Asynchronous | 16b | 3V | - | 1.6mm | 14mm | 14mm | 1.4mm | No | RoHS Compliant | Lead Free | ||
| 70V25L15PFG | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71T75802S166PFGI8Anlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 2.5V 18M-Bit 1M x 18 3.5ns 100-Pin TQFP T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | LQFP | YES | 100 | - | RAM, SRAM | Tape & Reel | 2012 | e3 | yes | Active | 3 (168 Hours) | 100 | - | Matte Tin (Sn) - annealed | 85°C | -40°C | PIPELINED ARCHITECTURE | QUAD | GULL WING | 260 | 1 | 2.5V | 0.65mm | 166MHz | - | 100 | 2.5V | 2.625V | - | INDUSTRIAL | 2.375V | Parallel | - | - | - | 1 | - | - | - | 0.265mA | - | - | 3-STATE | 20b | 18 Mb | 0.06A | 3.5 ns | COMMON | - | - | 2.38V | - | - | 20mm | 14mm | 1.4mm | No | RoHS Compliant | Lead Free | ||
| 71T75802S166PFGI8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V3557S85PFGI8Anlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 3.3V 4.5M-Bit 128K x 36 8.5ns 100-Pin TQFP T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | LQFP | YES | 100 | - | RAM, SRAM | Tape & Reel | 2009 | e3 | yes | Active | 3 (168 Hours) | 100 | - | Matte Tin (Sn) - annealed | 85°C | -40°C | FLOW-THROUGH ARCHITECTURE | QUAD | GULL WING | 260 | 1 | 3.3V | 0.65mm | - | 30 | 100 | 3.3V | 3.465V | - | INDUSTRIAL | - | Parallel | - | - | - | 1 | - | - | 90MHz | 0.235mA | - | - | 3-STATE | 17b | 4.5 Mb | 0.045A | 8.5 ns | COMMON | - | - | - | - | - | 20mm | 14mm | 1.4mm | No | RoHS Compliant | Lead Free | ||
| 71V3557S85PFGI8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип70V631S15BC8Anlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Dual 3.3V 4.5M-Bit 256K x 18 15ns 256-Pin CABGA T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | - | - | 256 | - | RAM, SRAM | Tape & Reel | 2009 | e0 | no | Active | 3 (168 Hours) | 256 | - | Tin/Lead (Sn63Pb37) | 70°C | 0°C | - | BOTTOM | BALL | 225 | 1 | 3.3V | 1mm | - | - | 256 | 3.3V | - | - | COMMERCIAL | - | Parallel | 3.45V | 3.15V | - | 2 | 440mA | - | - | - | 15 ns | - | 3-STATE | 18b | 4.5 Mb | 0.015A | - | COMMON | Asynchronous | 18b | - | - | 1.7mm | 17mm | 17mm | 1.4mm | No | RoHS Compliant | Contains Lead | ||
| 70V631S15BC8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип70V08L15PFG8Anlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Dual 3.3V 512K-Bit 64K x 8 15ns 100-Pin TQFP T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | TQFP | - | 100 | - | RAM, SDR, SRAM | - | 2009 | e3 | yes | Active | 3 (168 Hours) | 100 | - | Matte Tin (Sn) | 70°C | 0°C | - | QUAD | GULL WING | 260 | 1 | 3.3V | 0.5mm | - | - | 100 | 3.3V | - | - | COMMERCIAL | - | Parallel | 3.6V | 3V | 64kB | 2 | 225mA | - | - | - | 15 ns | 64KX8 | - | 32b | 512 kb | - | - | - | Asynchronous | 8b | - | - | 1.6mm | 14mm | 14mm | 1.4mm | No | RoHS Compliant | Lead Free | ||
| 70V08L15PFG8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип70V24L35PFG8Anlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Dual 3.3V 64K-Bit 4K x 16 35ns 100-Pin TQFP T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | - | TQFP | YES | 100 | - | RAM, SDR, SRAM | Tape & Reel | 2008 | e3 | yes | Active | 3 (168 Hours) | 100 | EAR99 | Matte Tin (Sn) | 70°C | 0°C | - | QUAD | GULL WING | 260 | 1 | 3.3V | 0.5mm | - | - | 100 | 3.3V | - | - | COMMERCIAL | - | Parallel | 3.6V | 3V | 8kB | 2 | - | - | - | - | 35 ns | 4KX16 | - | 24b | 64 kb | - | - | - | - | - | - | - | 1.6mm | 14mm | 14mm | 1.4mm | No | RoHS Compliant | Lead Free | ||
| 70V24L35PFG8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип70V3319S166BC8Anlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Dual 3.3V 4.5M-Bit 256K x 18 12ns/3.6ns 256-Pin CABGA T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | - | - | 256 | - | RAM, SRAM | Tape & Reel | 2009 | e0 | no | Active | 3 (168 Hours) | 256 | - | Tin/Lead (Sn63Pb37) | 70°C | 0°C | PIPELINED OR FLOW-THROUGH ARCHITECTURE | BOTTOM | BALL | 225 | 1 | 3.3V | 1mm | 166MHz | - | 256 | 3.3V | - | - | COMMERCIAL | - | Parallel | 3.45V | 3.15V | - | 2 | 500mA | - | - | - | 12 ns | - | 3-STATE | 18b | 4.5 Mb | 0.03A | - | COMMON | Synchronous | 18b | - | - | 1.7mm | 17mm | 17mm | 1.4mm | No | RoHS Compliant | Contains Lead | ||
| 70V3319S166BC8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип70T651S12BCAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Dual 2.5V 9M-Bit 256K x 36 12ns 256-Pin CABGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | - | - | 256 | - | RAM, SDR, SRAM | Bulk | 2009 | e0 | no | Active | 3 (168 Hours) | 256 | - | Tin/Lead (Sn63Pb37) | 70°C | 0°C | - | BOTTOM | BALL | 225 | 1 | 2.5V | 1mm | - | 20 | 256 | 2.5V | - | - | COMMERCIAL | - | Parallel | 2.6V | 2.4V | 1.1MB | 2 | 355mA | - | - | - | 12 ns | - | 3-STATE | 18b | 9 Mb | 0.01A | - | COMMON | Asynchronous | 36b | - | - | 1.5mm | 17mm | 17mm | 1.4mm | No | RoHS Compliant | Contains Lead | ||
| 70T651S12BC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V016SA10PHG8Anlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Single 3.3V 1M-Bit 64K x 16 10ns 44-Pin TSOP-II T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | Surface Mount | TSOP | - | 44 | - | RAM, SDR, SRAM - Asynchronous | Tape & Reel | 2011 | e3 | yes | Active | 3 (168 Hours) | 44 | - | Matte Tin (Sn) - annealed | 70°C | 0°C | - | DUAL | GULL WING | 260 | 1 | 3.3V | 0.8mm | - | 30 | 44 | 3.3V | - | - | COMMERCIAL | - | Parallel | 3.6V | 3.15V | 128kB | 1 | 160mA | - | - | - | 10 ns | - | 3-STATE | 16b | 1 Mb | - | - | COMMON | Asynchronous | 16b | - | - | - | 18.41mm | 10.16mm | 1mm | No | RoHS Compliant | Lead Free | ||
| 71V016SA10PHG8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип70V28L20PFGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Dual 3.3V 1M-Bit 64K x 16 20ns 100-Pin TQFP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | TQFP | - | 100 | - | RAM, SDR, SRAM | Bulk | 2008 | - | - | Active | - | - | - | - | 70°C | 0°C | - | - | - | - | - | - | - | - | - | - | 3.3V | - | - | - | - | Parallel | 3.6V | 3V | 128kB | 2 | 205mA | - | - | - | 20 ns | - | - | 32b | 1 Mb | - | - | - | Asynchronous | 16b | - | - | - | 14mm | 14mm | 1.4mm | No | RoHS Compliant | Lead Free | ||
| 70V28L20PFG | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип70V9199L12PFAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Dual 3.3V 1.125M-Bit 128K x 9-Bit 25ns/12ns 100-Pin TQFP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | TQFP | - | 100 | - | RAM, SDR, SRAM | - | 2009 | e0 | no | Active | 3 (168 Hours) | 100 | - | Tin/Lead (Sn85Pb15) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | QUAD | GULL WING | 240 | 1 | 3.3V | 0.5mm | 33.3MHz | 20 | 100 | 3.3V | - | - | COMMERCIAL | - | Parallel | 3.6V | 3V | 128kB | 2 | 200mA | - | - | - | 12 ns | - | 3-STATE | 34b | 1.1 Mb | - | - | COMMON | Synchronous | 9b | 3V | - | - | 14mm | 14mm | 1.4mm | No | RoHS Compliant | Contains Lead | ||
| 70V9199L12PF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V124SA15TYG8Anlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Single 3.3V 1M-Bit 128K x 8 15ns 32-Pin SOJ T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | - | - | 32 | - | RAM, SDR, SRAM - Asynchronous | Tape & Reel | 2013 | e3 | yes | Active | 3 (168 Hours) | 32 | - | Matte Tin (Sn) - annealed | 70°C | 0°C | - | DUAL | J BEND | 260 | 1 | 3.3V | - | - | - | 32 | 3.3V | - | - | COMMERCIAL | - | Parallel | 3.6V | 3V | 128kB | 1 | 100mA | - | - | - | 15 ns | - | 3-STATE | 17b | 1 Mb | - | - | COMMON | Asynchronous | 8b | 3V | - | 3.7592mm | 21.95mm | 7.6mm | 2.67mm | No | RoHS Compliant | Lead Free | ||
| 71V124SA15TYG8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип70V631S12BCIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Dual 3.3V 4.5M-Bit 256K x 18 12ns 256-Pin CABGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | - | - | 256 | - | RAM, SDR, SRAM | - | 2009 | e0 | no | Active | 3 (168 Hours) | 256 | - | Tin/Lead (Sn63Pb37) | 85°C | -40°C | - | BOTTOM | BALL | 225 | 1 | 3.3V | 1mm | - | - | 256 | 3.3V | - | - | INDUSTRIAL | - | Parallel | 3.45V | 3.15V | 512kB | 2 | 515mA | - | - | - | 12 ns | - | 3-STATE | 18b | 4.5 Mb | 0.015A | - | COMMON | Asynchronous | 18b | - | - | 1.7mm | 17mm | 17mm | 1.4mm | No | RoHS Compliant | Contains Lead | ||
| 70V631S12BCI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип70T3519S133BF8Anlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Dual 2.5V 9M-Bit 256K x 36 15ns/4.2ns 208-Pin CABGA T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | - | - | 208 | 133MHz | RAM, SDR, SRAM | - | 2009 | e0 | no | Active | 3 (168 Hours) | 208 | - | Tin/Lead (Sn63Pb37) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | BOTTOM | BALL | 225 | 1 | 2.5V | 0.8mm | 133MHz | - | 208 | 2.5V | - | - | COMMERCIAL | - | Parallel | 2.6V | 2.4V | 1.1MB | 2 | 370mA | 370mA | - | - | 4.2 ns | - | 3-STATE | 36b | 9 Mb | 0.015A | - | COMMON | Synchronous | 36b | - | 1.4mm | - | 15mm | 15mm | 1.4mm | No | RoHS Compliant | Contains Lead | ||
| 70T3519S133BF8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип7134LA20JGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Dual 5V 32K-Bit 4K x 8 20ns 52-Pin PLCC Tube
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | PLCC | - | 52 | - | RAM, SDR, SRAM | - | 2013 | e3 | yes | Active | 1 (Unlimited) | 52 | EAR99 | Matte Tin (Sn) - annealed | 70°C | 0°C | - | QUAD | J BEND | 260 | 1 | 5V | - | - | - | 52 | 5V | - | 5V | COMMERCIAL | - | Parallel | 5.5V | 4.5V | 4kB | 2 | 240mA | - | - | - | 20 ns | 4KX8 | 3-STATE | 24b | 32 kb | 0.0015A | - | COMMON | Asynchronous | 8b | 2V | - | 4.57mm | 19mm | 19mm | 3.63mm | No | RoHS Compliant | Lead Free | ||
| 7134LA20JG | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V416S10YGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 10ns 44-Pin SOJ Tube/Tray
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | Surface Mount | - | - | 44 | - | RAM, SDR, SRAM - Asynchronous | - | 2005 | e3 | yes | Active | 3 (168 Hours) | 44 | - | Matte Tin (Sn) - annealed | 70°C | 0°C | - | DUAL | J BEND | 260 | 1 | 3.3V | - | - | - | 44 | 3.3V | - | - | INDUSTRIAL | - | Parallel | 3.6V | 3V | 512kB | 1 | 200mA | - | - | - | 10 ns | - | 3-STATE | 18b | 4 Mb | 0.02A | - | COMMON | Asynchronous | 16b | 3V | - | 3.683mm | 28.6mm | 10.2mm | 2.9mm | No | RoHS Compliant | Lead Free | ||
| 71V416S10YG |
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ