| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Mount | Package / Case | Surface Mount | Number of Pins | Frequency(Max) | Memory Types | Packaging | Published | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Supply Voltage | Terminal Pitch | Frequency | Time@Peak Reflow Temperature-Max (s) | Pin Count | Qualification Status | Operating Supply Voltage | Power Supplies | Temperature Grade | Interface | Max Supply Voltage | Min Supply Voltage | Memory Size | Number of Ports | Nominal Supply Current | Max Supply Current | Supply Current-Max | Access Time | Organization | Output Characteristics | Memory Width | Address Bus Width | Density | Standby Current-Max | Memory Density | I/O Type | Sync/Async | Word Size | Standby Voltage-Min | Height | Height Seated (Max) | Length | Width | Thickness | Radiation Hardening | RoHS Status | Lead Free |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. Тип70V9369L9PFG8Anlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Dual 3.3V 288K-Bit 16K x 18 20ns/9ns 100-Pin TQFP T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | TQFP | - | 100 | - | RAM, SRAM | Tape & Reel | 2009 | e3 | yes | Active | 3 (168 Hours) | 100 | - | Matte Tin (Sn) - annealed | 70°C | 0°C | - | - | QUAD | FLAT | 260 | 1 | 3.3V | 0.5mm | 40MHz | - | 100 | - | 3.3V | - | COMMERCIAL | Parallel | 3.6V | 3V | - | 2 | 225mA | - | - | 20 ns | 16KX18 | - | - | 14b | 288 kb | - | - | - | Synchronous | 18b | - | - | 1.6mm | 14mm | 14mm | 1.4mm | No | RoHS Compliant | Lead Free | ||
| 70V9369L9PFG8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71421SA55JAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Dual 5V 16K-bit 2K x 8 55ns 52-Pin PLCC Tube
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | PLCC | - | 52 | - | RAM, SDR, SRAM | - | 2005 | e0 | no | Active | 3 (168 Hours) | 52 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; AUTOMATIC POWER-DOWN | - | QUAD | J BEND | 225 | 1 | 5V | - | - | - | 52 | - | 5V | 5V | COMMERCIAL | Parallel | 5.5V | 4.5V | 2kB | 2 | 155mA | - | - | 55 ns | - | 3-STATE | - | 22b | 16 kb | 0.015A | - | COMMON | Asynchronous | 8b | - | - | - | 19mm | 19mm | 3.63mm | No | RoHS Compliant | Contains Lead | ||
| 71421SA55J | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V3557S85BGIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 3.3V 4.5M-Bit 128K x 36 8.5ns 119-Pin BGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | BGA | - | 119 | - | RAM, SRAM | - | 2009 | e0 | no | Active | 3 (168 Hours) | 119 | - | Tin/Lead (Sn63Pb37) | 85°C | -40°C | FLOW-THROUGH ARCHITECTURE | - | BOTTOM | BALL | 225 | 1 | 3.3V | - | 91MHz | 20 | 119 | - | 3.3V | - | INDUSTRIAL | Parallel | 3.465V | 3.135V | - | 1 | 235mA | - | - | 8.5 ns | - | 3-STATE | - | 17b | 4.5 Mb | 0.045A | - | COMMON | Synchronous | 36b | - | - | 2.36mm | 14mm | 22mm | 2.15mm | No | RoHS Compliant | Contains Lead | ||
| 71V3557S85BGI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V016SA10YGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Single 3.3V 1M-Bit 64K x 16 10ns 44-Pin SOJ Tube/Tray
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | Surface Mount | - | - | 44 | - | RAM, SDR, SRAM - Asynchronous | - | 2011 | e3 | yes | Active | 3 (168 Hours) | 44 | - | Matte Tin (Sn) - annealed | 70°C | 0°C | - | - | DUAL | J BEND | 260 | 1 | 3.3V | - | - | 30 | 44 | - | 3.3V | - | COMMERCIAL | Parallel | 3.6V | 3.15V | 128kB | 1 | 160mA | - | - | 10 ns | - | 3-STATE | - | 16b | 1 Mb | - | - | COMMON | Asynchronous | 16b | - | - | 3.683mm | 28.6mm | 10.2mm | 2.9mm | No | RoHS Compliant | Lead Free | ||
| 71V016SA10YG | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V3558S133PFGIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 3.3V 4.5M-Bit 256K x 18 4.2ns 100-Pin TQFP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | Surface Mount | TQFP | - | 100 | 133MHz | RAM, SDR, SRAM | - | 2006 | e3 | yes | Active | 3 (168 Hours) | 100 | - | Matte Tin (Sn) - annealed | 85°C | -40°C | - | - | QUAD | GULL WING | 260 | 1 | 3.3V | 0.65mm | 133MHz | 30 | 100 | - | 3.3V | - | INDUSTRIAL | Parallel | 3.465V | 3.135V | 512kB | 1 | 310mA | - | - | 4.2 ns | - | 3-STATE | - | 18b | 4.5 Mb | 0.045A | - | COMMON | Synchronous | 18b | - | - | - | 20mm | 14mm | 1.4mm | No | RoHS Compliant | Lead Free | ||
| 71V3558S133PFGI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип7164L20TPGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Single 5V 64K-Bit 8K x 8 20ns 28-Pin PDIP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Through Hole | PDIP | - | 28 | - | RAM, SRAM - Asynchronous | Bulk | 2009 | e3 | yes | - | - | 28 | EAR99 | Matte Tin (Sn) - annealed | 70°C | 0°C | - | - | DUAL | - | - | 1 | 5V | 2.54mm | - | - | 28 | - | 5V | 5V | COMMERCIAL | Parallel | 5.5V | 4.5V | - | 1 | 90mA | - | - | 20 ns | 8KX8 | 3-STATE | 8 | 13b | 64 kb | 0.00006A | - | COMMON | Asynchronous | 8b | 2V | - | 4.572mm | - | - | - | No | RoHS Compliant | - | ||
| 7164L20TPG | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип7134LA25PDGIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | - | PDIP | NO | 48 | - | RAM, SDR, SRAM | Bulk | 2013 | e3 | yes | Active | 1 (Unlimited) | 48 | EAR99 | MATTE TIN | 85°C | -40°C | - | 8542.32.00.41 | DUAL | THROUGH-HOLE | 260 | 1 | 5V | 2.54mm | - | - | 48 | - | - | 5V | INDUSTRIAL | Parallel | 5.5V | 4.5V | 4kB | 2 | - | - | 0.26mA | 25 ns | 4KX8 | 3-STATE | - | - | - | 0.004A | 32768 bit | COMMON | - | - | 2V | - | - | 61.7mm | 15.24mm | 3.8mm | No | RoHS Compliant | Lead Free | ||
| 7134LA25PDGI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V3556S166PFG8Anlielectronics Тип | Integrated Device Technology (IDT) |
SRAM 4M X36 3.3V I/O SLOW ZBT
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | Surface Mount | TQFP | - | 100 | 166MHz | RAM, SDR, SRAM | - | 2006 | e3 | yes | Active | 3 (168 Hours) | 100 | - | Matte Tin (Sn) - annealed | 70°C | 0°C | - | - | QUAD | GULL WING | 260 | 1 | 3.3V | 0.65mm | 166MHz | 30 | 100 | - | 3.3V | - | COMMERCIAL | Parallel | 3.465V | 3.135V | 512kB | 1 | 350mA | - | - | 3.5 ns | - | 3-STATE | - | 17b | 4.5 Mb | 0.04A | - | COMMON | Synchronous | 36b | - | - | - | 20mm | 14mm | 1.4mm | No | RoHS Compliant | Lead Free | ||
| 71V3556S166PFG8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип7133LA25JAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM 32K(2KX16)CMOS DUALPORT R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | PLCC | - | 68 | - | RAM, SDR, SRAM | - | 2008 | e0 | no | Active | 3 (168 Hours) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | - | - | QUAD | J BEND | 225 | 1 | 5V | - | - | - | 68 | - | 5V | 5V | COMMERCIAL | Parallel | 5.5V | 4.5V | 4kB | 2 | 270mA | - | - | 25 ns | - | 3-STATE | - | 22b | 32 kb | 0.0015A | - | COMMON | Asynchronous | 16b | 2V | - | - | 24mm | 24mm | 3.63mm | No | RoHS Compliant | Contains Lead | ||
| 7133LA25J | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71342SA25PFAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Dual 5V 32K-Bit 4K x 8 25ns 64-Pin TQFP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | TQFP | - | 64 | - | RAM, SDR, SRAM | - | 2009 | e0 | no | Active | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | - | - | QUAD | GULL WING | 240 | 1 | 5V | 0.8mm | - | 20 | 64 | - | 5V | 5V | COMMERCIAL | Parallel | 5.5V | 4.5V | 4kB | 2 | 280mA | - | - | 25 ns | 4KX8 | 3-STATE | - | 24b | 32 kb | 0.015A | - | COMMON | Asynchronous | 8b | - | - | 1.6mm | 14mm | 14mm | 1.4mm | No | RoHS Compliant | Contains Lead | ||
| 71342SA25PF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V65903S85BGGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 3.3V 9M-Bit 512K x 18 8.5ns 119-Pin BGA Tube
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | - | BGA | - | 119 | - | RAM, SRAM | - | 2005 | - | - | Active | - | - | - | - | 70°C | 0°C | - | - | - | - | - | - | - | - | - | - | - | - | 3.3V | - | - | Parallel | - | - | - | 1 | - | - | - | - | - | - | - | 19b | 9 Mb | - | - | - | - | - | - | - | - | 14mm | 22mm | 2.15mm | No | RoHS Compliant | Lead Free | ||
| 71V65903S85BGG | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71421LA55JAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Dual 5V 16K-Bit 2K x 8 55ns 52-Pin PLCC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | PLCC | - | 52 | - | RAM, SDR, SRAM | - | 2008 | e0 | no | Active | 3 (168 Hours) | 52 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; BATTERY BACKUP | - | QUAD | J BEND | 225 | 1 | 5V | - | - | - | 52 | - | 5V | 5V | COMMERCIAL | Parallel | 5.5V | 4.5V | 2kB | 2 | 110mA | - | - | 55 ns | - | 3-STATE | - | 22b | 16 kb | 0.0015A | - | COMMON | Asynchronous | 8b | 2V | - | - | 19mm | 19mm | 3.63mm | No | RoHS Compliant | Contains Lead | ||
| 71421LA55J | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V016SA15PHGIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM 64Kx16 ASYNCHRONOUS 3.3V STATIC RAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | Surface Mount | TSOP | - | 44 | - | RAM, SDR, SRAM - Asynchronous | - | 2011 | e3 | yes | Active | 3 (168 Hours) | 44 | - | Matte Tin (Sn) - annealed | 85°C | -40°C | - | - | DUAL | GULL WING | 260 | 1 | 3.3V | 0.8mm | - | 30 | 44 | Not Qualified | 3.3V | - | INDUSTRIAL | Parallel | 3.6V | 3V | 128kB | 1 | 130mA | 130mA | - | 15 ns | - | 3-STATE | - | 16b | 1 Mb | - | - | COMMON | Asynchronous | 16b | 3V | - | - | 18.41mm | 10.16mm | 1mm | - | RoHS Compliant | Lead Free | ||
| 71V016SA15PHGI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V2556S150PFG8Anlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 3.3V 4.5M-Bit 128K x 36 3.8ns 100-Pin TQFP T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | TQFP | YES | 100 | 150MHz | RAM, SDR, SRAM | - | 2011 | e3 | yes | Active | 3 (168 Hours) | 100 | - | Matte Tin (Sn) - annealed | 70°C | 0°C | PIPELINED ARCHITECTURE | - | QUAD | FLAT | 260 | 1 | 3.3V | 0.65mm | 150MHz | 30 | 100 | - | 3.3V | - | COMMERCIAL | Parallel | 3.465V | 3.135V | 512kB | 1 | - | - | 0.325mA | 3.8 ns | - | 3-STATE | - | 17b | 4.5 Mb | 0.04A | - | COMMON | - | - | - | - | - | 20mm | 14mm | 1.4mm | No | RoHS Compliant | Lead Free | ||
| 71V2556S150PFG8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V3559S75PFGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 3.3V 4.5M-Bit 256K x 18 7.5ns 100-Pin TQFP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | Surface Mount | TQFP | - | 100 | 100MHz | RAM, SDR, SRAM | - | 2009 | e3 | yes | Active | 3 (168 Hours) | 100 | - | Matte Tin (Sn) - annealed | 70°C | 0°C | FLOW-THROUGH ARCHITECHTURE | - | QUAD | GULL WING | 260 | 1 | 3.3V | 0.65mm | 100MHz | 30 | 100 | - | 3.3V | - | COMMERCIAL | Parallel | 3.465V | 3.135V | 512kB | 1 | 275mA | - | - | 7.5 ns | - | 3-STATE | - | 18b | 4.5 Mb | 0.04A | - | COMMON | Synchronous | 18b | - | - | - | 20mm | 14mm | 1.4mm | No | RoHS Compliant | Lead Free | ||
| 71V3559S75PFG | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V3557S80BGI8Anlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 3.3V 4.5M-Bit 128K x 36 8ns 119-Pin BGA T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | BGA | - | 119 | - | RAM, SRAM | Tape & Reel | 2009 | e0 | no | Active | 3 (168 Hours) | 119 | - | Tin/Lead (Sn63Pb37) | 85°C | -40°C | FLOW-THROUGH ARCHITECTURE | - | BOTTOM | BALL | 225 | 1 | 3.3V | - | 95MHz | 20 | 119 | - | 3.3V | - | INDUSTRIAL | Parallel | 3.465V | 3.135V | - | 1 | 260mA | - | - | 8 ns | - | 3-STATE | - | 17b | 4.5 Mb | 0.045A | - | COMMON | Synchronous | 36b | - | - | 2.36mm | 14mm | 22mm | 2.15mm | No | RoHS Compliant | Contains Lead | ||
| 71V3557S80BGI8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V65803S150BGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 3.3V 9M-Bit 512K x 18 3.8ns 119-Pin BGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | BGA | - | 119 | 150MHz | RAM, SDR, SRAM | - | 2005 | e0 | no | Active | 3 (168 Hours) | 119 | - | Tin/Lead (Sn63Pb37) | 70°C | 0°C | PIPELINED ARCHITECTURE | - | BOTTOM | BALL | 225 | 1 | 3.3V | - | 150MHz | 20 | 119 | - | 3.3V | - | COMMERCIAL | Parallel | 3.465V | 3.135V | 1.1MB | 1 | 325mA | 325mA | - | 6.7 ns | - | 3-STATE | - | 19b | 9 Mb | 0.04A | - | COMMON | Synchronous | 18b | - | 2.15mm | - | 14mm | 22mm | 2.15mm | No | RoHS Compliant | Contains Lead | ||
| 71V65803S150BG | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип70V37L20PFGI8Anlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Dual 3.3V 576K-Bit 32K x 18 20ns 100-Pin TQFP T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | TQFP | - | 100 | - | RAM, SRAM | Tape & Reel | 2009 | e3 | yes | Active | 3 (168 Hours) | 100 | - | Matte Tin (Sn) - annealed | 85°C | -40°C | - | - | QUAD | GULL WING | 260 | 1 | 3.3V | 0.5mm | - | 30 | 100 | - | 3.3V | - | INDUSTRIAL | Parallel | 3.6V | 3V | - | 2 | 220mA | - | - | 20 ns | - | 3-STATE | - | 15b | 576 kb | 0.003A | - | COMMON | Asynchronous | 18b | 3V | - | 1.6mm | 14mm | 14mm | 1.4mm | No | RoHS Compliant | Lead Free | ||
| 70V37L20PFGI8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71T75802S200BGIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 2.5V 18M-Bit 1M x 18 3.2ns 119-Pin BGA Tube/Tray
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Surface Mount | BGA | - | 119 | - | RAM, SRAM | - | 2012 | e0 | no | Active | 3 (168 Hours) | 119 | - | Tin/Lead (Sn63Pb37) | 85°C | -40°C | PIPELINED ARCHITECTURE | - | BOTTOM | BALL | 225 | 1 | 2.5V | - | 200MHz | - | 119 | - | 2.5V | - | INDUSTRIAL | Parallel | 2.625V | 2.375V | - | 1 | 295mA | - | - | 3.2 ns | - | 3-STATE | - | 20b | 18 Mb | - | - | COMMON | Synchronous | 18b | 2.38V | - | 2.36mm | 14mm | 22mm | 2.15mm | No | RoHS Compliant | Contains Lead | ||
| 71T75802S200BGI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V3559S75PFGIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 3.3V 4.5M-Bit 256K x 18 7.5ns 100-Pin TQFP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Surface Mount | TQFP | - | 100 | 100MHz | RAM, SDR, SRAM | - | 2009 | e3 | yes | Discontinued | 3 (168 Hours) | - | - | MATTE TIN | 85°C | -40°C | - | - | - | - | 260 | - | - | - | 100MHz | - | 100 | - | 3.3V | - | - | Parallel | 3.465V | 3.135V | 512kB | 1 | - | - | - | 7.5 ns | - | - | - | 18b | 4.5 Mb | - | - | - | Synchronous | 18b | - | - | - | 20mm | 14mm | 1.4mm | No | RoHS Compliant | Lead Free | ||
| 71V3559S75PFGI |
Индекс :
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