| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Mount | Package / Case | Surface Mount | Number of Pins | Frequency(Max) | Memory Types | Packaging | Published | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Supply Voltage | Terminal Pitch | Frequency | Time@Peak Reflow Temperature-Max (s) | Pin Count | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Interface | Max Supply Voltage | Min Supply Voltage | Memory Size | Number of Ports | Nominal Supply Current | Max Supply Current | Supply Current-Max | Access Time | Organization | Output Characteristics | Address Bus Width | Density | Standby Current-Max | Access Time (Max) | I/O Type | Sync/Async | Word Size | Standby Voltage-Min | Height | Height Seated (Max) | Length | Width | Thickness | Radiation Hardening | RoHS Status | Lead Free |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. Тип71V3556SA166BQAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 3.3V 4.5M-Bit 128K x 36 3.5ns 165-Pin CABGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 11 Weeks | Surface Mount | - | - | 165 | 166MHz | RAM, SDR, SRAM | - | 2015 | e0 | no | Active | 3 (168 Hours) | 165 | - | Tin/Lead (Sn63Pb37) | 70°C | 0°C | - | BOTTOM | BALL | 225 | 1 | 3.3V | - | 166MHz | 20 | 165 | 3.3V | - | - | COMMERCIAL | - | Parallel | 3.465V | 3.135V | 512kB | 1 | 350mA | 350mA | - | 3.5 ns | - | 3-STATE | 17b | 4.5 Mb | 0.04A | - | COMMON | Synchronous | 36b | - | 1.2mm | - | 15mm | 13mm | 1.2mm | No | RoHS Compliant | Contains Lead | ||
| 71V3556SA166BQ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V416L12PHGIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM 256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | Surface Mount | TSOP | - | 44 | - | RAM, SDR, SRAM - Asynchronous | - | 2013 | e3 | yes | Active | 3 (168 Hours) | 44 | - | Matte Tin (Sn) - annealed | 85°C | -40°C | - | DUAL | GULL WING | 260 | 1 | 3.3V | 0.8mm | - | 30 | 44 | 3.3V | - | - | INDUSTRIAL | - | Parallel | 3.6V | 3V | 512kB | 1 | 170mA | - | - | 12 ns | - | 3-STATE | 18b | 4 Mb | - | - | COMMON | Asynchronous | 16b | 3V | - | - | 18.41mm | 10.16mm | 1mm | No | RoHS Compliant | Lead Free | ||
| 71V416L12PHGI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V2546S100BGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM 4MEG ZBT W/ 2.5V I/O
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | BGA | - | 119 | 100MHz | RAM, SDR, SRAM | - | 2011 | e0 | no | Active | 3 (168 Hours) | 119 | - | Tin/Lead (Sn63Pb37) | 70°C | 0°C | PIPELINED ARCHITECTURE | BOTTOM | BALL | 225 | 1 | 3.3V | - | 100MHz | 20 | 119 | 3.3V | - | - | OTHER | - | Parallel | 3.465V | 3.135V | 512kB | 1 | 250mA | - | - | 5 ns | - | 3-STATE | 17b | 4.5 Mb | 0.04A | - | COMMON | Synchronous | 36b | - | - | 2.36mm | 14mm | 22mm | 2.15mm | No | RoHS Compliant | Contains Lead | ||
| 71V2546S100BG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V3559S80BG8Anlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 3.3V 4.5M-Bit 256K x 18 8ns 119-Pin BGA T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | BGA | - | 119 | 100MHz | RAM, SDR, SRAM | Tape & Reel | 2009 | e0 | no | Active | 3 (168 Hours) | 119 | - | Tin/Lead (Sn63Pb37) | 70°C | 0°C | - | BOTTOM | BALL | 225 | - | 3.3V | - | 95MHz | - | 119 | 3.3V | - | - | COMMERCIAL | - | Parallel | 3.465V | 3.135V | 512kB | 1 | 250mA | - | - | 8 ns | - | 3-STATE | 18b | 4.5 Mb | 0.04A | - | COMMON | Synchronous | 18b | - | - | - | 14mm | 22mm | 2.15mm | No | RoHS Compliant | Contains Lead | ||
| 71V3559S80BG8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип70V07L25PFG8Anlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Dual 3.3V 256K-Bit 32K x 8 25ns 80-Pin TQFP T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | - | LQFP | YES | 80 | - | RAM, SRAM | Tape & Reel | 2013 | e3 | yes | Active | 3 (168 Hours) | 80 | EAR99 | Matte Tin (Sn) - annealed | 70°C | 0°C | - | QUAD | FLAT | 260 | 1 | 3.3V | 0.65mm | - | 30 | 80 | 3.3V | 3.6V | - | COMMERCIAL | 3V | Parallel | - | - | - | 2 | - | - | 0.14mA | - | - | 3-STATE | 30b | 256 kb | 0.003A | - | COMMON | - | - | 3V | - | 1.6mm | 14mm | 14mm | 1.4mm | No | RoHS Compliant | Lead Free | ||
| 70V07L25PFG8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V3558S133PFGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 3.3V 4.5M-Bit 256K x 18 4.2ns 100-Pin TQFP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | Surface Mount | TQFP | - | 100 | 133MHz | RAM, SDR, SRAM | - | 2006 | e3 | yes | Active | 3 (168 Hours) | 100 | - | Matte Tin (Sn) - annealed | 70°C | 0°C | - | QUAD | GULL WING | 260 | 1 | 3.3V | 0.65mm | 133MHz | 30 | 100 | 3.3V | - | - | COMMERCIAL | - | Parallel | 3.465V | 3.135V | 512kB | 1 | 300mA | - | - | 4.2 ns | - | 3-STATE | 18b | 4.5 Mb | 0.04A | - | COMMON | Synchronous | 18b | - | - | - | 20mm | 14mm | 1.4mm | No | RoHS Compliant | Lead Free | ||
| 71V3558S133PFG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V67703S80BQ8Anlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 3.3V 9M-Bit 256K x 36 8ns 165-Pin CABGA T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | - | - | 165 | - | RAM, SRAM | Tape & Reel | 2009 | e0 | no | Active | 3 (168 Hours) | 165 | - | TIN LEAD | 70°C | 0°C | FLOW-THROUGH ARCHITECTURE | BOTTOM | BALL | 225 | 1 | 3.3V | - | 100MHz | 20 | 165 | 3.3V | - | - | COMMERCIAL | - | Parallel | 3.465V | 3.135V | - | 1 | 210mA | - | - | 8 ns | 256KX36 | 3-STATE | 18b | 9 Mb | 0.05A | - | COMMON | Synchronous | 36b | - | - | - | 15mm | 13mm | 1.2mm | No | RoHS Compliant | Contains Lead | ||
| 71V67703S80BQ8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип70V631S10BCGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Dual 3.3V 4.5M-Bit 256K x 18 10ns 256-Pin CABGA Tube
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | - | - | 256 | - | RAM, SRAM | - | 2009 | e1 | yes | Active | 3 (168 Hours) | 256 | - | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | - | BOTTOM | BALL | 260 | 1 | 3.3V | 1mm | - | 30 | 256 | 3.3V | - | - | COMMERCIAL | - | Parallel | 3.45V | 3.15V | - | 2 | 500mA | - | - | 10 ns | - | 3-STATE | 36b | 4.5 Mb | 0.015A | - | COMMON | Asynchronous | 18b | - | - | 1.7mm | 17mm | 17mm | 1.4mm | No | RoHS Compliant | Lead Free | ||
| 70V631S10BCG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71321LA55TFGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Dual 5V 16K-Bit 2K x 8 55ns 64-Pin STQFP Tray
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | TQFP | - | 64 | - | RAM, SDR, SRAM | Bulk | 2008 | e3 | yes | Active | 3 (168 Hours) | 64 | EAR99 | Matte Tin (Sn) - annealed | 70°C | 0°C | AUTOMATIC POWER DOWN | QUAD | GULL WING | 260 | 1 | 5V | 0.5mm | - | 30 | 64 | 5V | - | 5V | COMMERCIAL | - | Parallel | 5.5V | 4.5V | 2kB | 2 | 110mA | - | - | 55 ns | - | 3-STATE | 22b | 16 kb | 0.0015A | - | COMMON | Asynchronous | 8b | 2V | - | 1.6mm | 10mm | 10mm | 1.4mm | No | RoHS Compliant | Lead Free | ||
| 71321LA55TFG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71T75902S85BG8Anlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 2.5V 18M-Bit 1M x 18 8.5ns 119-Pin BGA T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Surface Mount | BGA | - | 119 | - | RAM, SRAM | Tape & Reel | 2005 | e0 | no | Active | 3 (168 Hours) | 119 | - | Tin/Lead (Sn63Pb37) | 70°C | 0°C | FLOW-THROUGH ARCHITECTURE | BOTTOM | BALL | 225 | 1 | 2.5V | - | 91MHz | 20 | 119 | 2.5V | - | - | COMMERCIAL | - | Parallel | 2.625V | 2.375V | - | 1 | 225mA | - | - | 8.5 ns | - | 3-STATE | 20b | 18 Mb | 0.04A | - | COMMON | Synchronous | 18b | 2.38V | - | 2.36mm | 14mm | 22mm | 2.15mm | No | RoHS Compliant | Contains Lead | ||
| 71T75902S85BG8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип70V9369L9PFGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Dual 3.3V 288K-Bit 16K x 18 20ns/9ns 100-Pin TQFP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | TQFP | - | 100 | - | RAM, SRAM | Bulk | 2009 | e3 | yes | Active | 3 (168 Hours) | 100 | - | Matte Tin (Sn) - annealed | 70°C | 0°C | - | QUAD | FLAT | 260 | 1 | 3.3V | 0.5mm | 40MHz | 30 | 100 | 3.3V | - | - | COMMERCIAL | - | Parallel | 3.6V | 3V | - | 2 | 225mA | - | - | 20 ns | 16KX18 | 3-STATE | 28b | 288 kb | 0.005A | - | COMMON | Synchronous | 18b | 3V | - | 1.6mm | 14mm | 14mm | 1.4mm | No | RoHS Compliant | Lead Free | ||
| 70V9369L9PFG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип70V3599S166DRGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Dual 3.3V 4.5M-Bit 128K x 36 12ns/3.6ns 208-Pin PQFP Tray
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | - | PQFP | YES | 208 | - | RAM, SDR, SRAM | Bulk | 2010 | e3 | yes | Active | 3 (168 Hours) | 208 | - | Matte Tin (Sn) | 70°C | 0°C | PIPELINED OR FLOW-THROUGH ARCHITECTURE | QUAD | GULL WING | - | 1 | 3.3V | 0.5mm | 166MHz | - | 208 | 3.3V | - | - | COMMERCIAL | - | Parallel | 3.45V | 3.15V | 512kB | 2 | - | - | 0.5mA | 20 ns | - | 3-STATE | 17b | 4.5 Mb | 0.03A | - | COMMON | - | - | - | - | 4.1mm | 28mm | 28mm | 3.5mm | No | RoHS Compliant | Lead Free | ||
| 70V3599S166DRG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип70V08L15PFGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Dual 3.3V 512K-Bit 64K x 8 15ns 100-Pin TQFP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | TQFP | - | 100 | - | RAM, SDR, SRAM | Bulk | 2009 | e3 | yes | Active | 3 (168 Hours) | 100 | - | Matte Tin (Sn) - annealed | 70°C | 0°C | - | QUAD | GULL WING | 260 | 1 | 3.3V | 0.5mm | - | 30 | 100 | 3.3V | - | - | COMMERCIAL | - | Parallel | 3.6V | 3V | 64kB | 2 | 225mA | - | - | 15 ns | 64KX8 | 3-STATE | 32b | 512 kb | 0.003A | - | COMMON | Asynchronous | 8b | 3V | - | 1.6mm | 14mm | 14mm | 1.4mm | No | RoHS Compliant | Lead Free | ||
| 70V08L15PFG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип70V3319S166BF8Anlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Dual 3.3V 4.5M-Bit 256K x 18 12ns/3.6ns 208-Pin CABGA T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | - | - | 208 | 166MHz | RAM, SDR, SRAM | - | 2009 | e0 | no | Active | 3 (168 Hours) | 208 | - | Tin/Lead (Sn63Pb37) | 70°C | 0°C | PIPELINED OR FLOW-THROUGH ARCHITECTURE | BOTTOM | BALL | 225 | 1 | 3.3V | 0.8mm | 166MHz | - | 208 | 3.3V | - | - | COMMERCIAL | - | Parallel | 3.45V | 3.15V | 512kB | 2 | 500mA | 500mA | - | 3.6 ns | - | 3-STATE | 18b | 4.5 Mb | 0.03A | - | COMMON | Synchronous | 18b | - | 1.4mm | - | 15mm | 15mm | 1.4mm | No | RoHS Compliant | Contains Lead | ||
| 70V3319S166BF8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип70V3599S133DRGIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Dual 3.3V 4.5M-Bit 128K x 36 15ns/4.2ns 208-Pin PQFP Tray
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | - | PQFP | YES | 208 | - | RAM, SRAM | Bulk | 2010 | e3 | yes | Active | 3 (168 Hours) | 208 | - | Matte Tin (Sn) | 85°C | -40°C | PIPELINED OR FLOW-THROUGH ARCHITECTURE | QUAD | GULL WING | - | 1 | 3.3V | 0.5mm | 133MHz | - | 208 | 3.3V | 3.45V | - | INDUSTRIAL | 3.15V | Parallel | - | - | - | 2 | - | - | 0.48mA | - | - | 3-STATE | 17b | 4.5 Mb | 0.04A | 15 ns | COMMON | - | - | 3.15V | - | 4.1mm | 28mm | 28mm | 3.5mm | No | RoHS Compliant | Lead Free | ||
| 70V3599S133DRGI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V016SA12BFGI8Anlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Single 3.3V 1M-Bit 64K x 16 12ns 48-Pin CABGA T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | - | YES | 48 | - | RAM, SDR, SRAM - Asynchronous | Tape & Reel | 2011 | e1 | yes | Active | 3 (168 Hours) | 48 | - | Tin/Silver/Copper (Sn/Ag/Cu) | 85°C | -40°C | - | BOTTOM | BALL | 260 | 1 | 3.3V | 0.75mm | - | 30 | 48 | 3.3V | - | - | INDUSTRIAL | - | Parallel | 3.6V | 3V | 128kB | 1 | - | - | - | 12 ns | - | 3-STATE | 16b | 1 Mb | - | - | COMMON | - | - | 3V | - | - | 7mm | 7mm | 1.4mm | No | RoHS Compliant | Lead Free | ||
| 71V016SA12BFGI8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип7007S35PFAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Dual 5V 256K-Bit 32K x 8 35ns 80-Pin TQFP Tray
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | TQFP | - | 80 | - | RAM, SDR, SRAM | - | 2008 | e0 | no | Active | 3 (168 Hours) | 80 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | QUAD | GULL WING | 240 | 1 | 5V | 0.65mm | - | 20 | 80 | 5V | - | 5V | COMMERCIAL | - | Parallel | 5.5V | 4.5V | 32kB | 2 | 295mA | - | - | 35 ns | - | 3-STATE | 30b | 256 kb | 0.015A | - | COMMON | Asynchronous | 8b | - | - | 1.6mm | 14mm | 14mm | 1.4mm | No | RoHS Compliant | Contains Lead | ||
| 7007S35PF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V3558S100PFGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 3.3V 4.5M-Bit 256K x 18 5ns 100-Pin TQFP Tray
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | Surface Mount | TQFP | - | 100 | 100MHz | RAM, SDR, SRAM | - | 2013 | e3 | yes | Active | 3 (168 Hours) | 100 | - | Matte Tin (Sn) - annealed | 70°C | 0°C | - | QUAD | GULL WING | 260 | 1 | 3.3V | 0.65mm | 100MHz | 30 | 100 | 3.3V | - | - | COMMERCIAL | - | Parallel | 3.465V | 3.135V | 512kB | 1 | 250mA | - | - | 5 ns | - | 3-STATE | 18b | 4.5 Mb | 0.04A | - | COMMON | Synchronous | 18b | - | - | - | 20mm | 14mm | 1.4mm | No | RoHS Compliant | Lead Free | ||
| 71V3558S100PFG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71024S12TYGI8Anlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Single 5V 1M-Bit 128K x 8 12ns 32-Pin SOJ T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Surface Mount | - | - | 32 | - | RAM, SDR, SRAM - Asynchronous | Tape & Reel | 2013 | e3 | yes | Active | 3 (168 Hours) | 32 | - | Matte Tin (Sn) - annealed | 85°C | -40°C | - | DUAL | J BEND | 260 | 1 | 5V | - | - | 30 | 32 | 5V | - | 5V | INDUSTRIAL | - | Parallel | 5.5V | 4.5V | 128kB | 1 | 160mA | - | - | 12 ns | - | 3-STATE | 17b | 1 Mb | - | - | COMMON | Asynchronous | 8b | - | - | 3.76mm | 21.95mm | 7.6mm | 2.67mm | No | RoHS Compliant | Lead Free | ||
| 71024S12TYGI8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип70T3599S166BFAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Dual 2.5V 4.5M-Bit 128K x 36 12ns/3.6ns 208-Pin CABGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | - | - | 208 | - | RAM, SRAM | - | 2009 | e0 | no | Active | 3 (168 Hours) | 208 | - | Tin/Lead (Sn63Pb37) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | BOTTOM | BALL | 225 | 1 | 2.5V | 0.8mm | 166MHz | - | 208 | 2.5V | - | - | COMMERCIAL | - | Parallel | 2.6V | 2.4V | - | 2 | 450mA | - | - | 12 ns | - | 3-STATE | 34b | 4.5 Mb | 0.015A | - | COMMON | Synchronous | 36b | - | - | - | 15mm | 15mm | 1.4mm | No | RoHS Compliant | Contains Lead | ||
| 70T3599S166BF |
Индекс :
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