| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Contact Plating | Mount | Mounting Type | Package / Case | Surface Mount | Number of Pins | Memory Types | Usage Level | Operating Temperature | Packaging | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Voltage - Supply | Terminal Position | Peak Reflow Temperature (Cel) | Number of Functions | Supply Voltage | Terminal Pitch | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Supply Voltage-Min (Vsup) | Interface | Memory Size | Number of Ports | Nominal Supply Current | Operating Mode | Clock Frequency | Access Time | Memory Format | Memory Interface | Data Bus Width | Organization | Output Characteristics | Memory Width | Write Cycle Time - Word, Page | Address Bus Width | Density | Standby Current-Max | Memory Density | Access Time (Max) | Parallel/Serial | I/O Type | Sync/Async | Word Size | Programming Voltage | Standby Voltage-Min | Page Size | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Height | Height Seated (Max) | Length | Width | Radiation Hardening | REACH SVHC | RoHS Status | Lead Free |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипIS42S32800J-7TLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
DRAM Chip SDRAM 256M-Bit 8M x 32 3.3V 86-Pin TSOP-II
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | - | Surface Mount | 86-TFSOP (0.400, 10.16mm Width) | YES | 86 | Volatile | Industrial grade | -40°C~85°C TA | Tray | e3 | - | Active | 3 (168 Hours) | 86 | - | Tin (Sn) | AUTO/SELF REFRESH | - | 3V~3.6V | DUAL | 260 | 1 | 3.3V | 0.5mm | 10 | - | - | - | - | 3.6V | - | 3V | - | 256Mb 8M x 32 | 1 | - | SYNCHRONOUS | 143MHz | 5.4ns | DRAM | Parallel | - | 8MX32 | - | 32 | - | - | - | - | 268435456 bit | - | - | - | - | - | - | - | - | - | - | - | - | 1.2mm | 22.22mm | 10.16mm | - | - | ROHS3 Compliant | - | ||
| IS42S32800J-7TLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS42S86400F-7TLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
IC SDRAM 512MBIT 143MHZ 54TSOP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Tin | Surface Mount | Surface Mount | 54-TSOP (0.400, 10.16mm Width) | - | 54 | Volatile | Industrial grade | -40°C~85°C TA | Tray | - | - | Active | 3 (168 Hours) | 54 | EAR99 | - | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | - | 3V~3.6V | DUAL | - | 1 | 3.3V | 0.8mm | - | - | - | Not Qualified | 3.3V | 3.6V | - | 3V | - | 512Mb 64M x 8 | 1 | - | SYNCHRONOUS | 143MHz | 5.4ns | DRAM | Parallel | 8b | 64MX8 | 3-STATE | 8 | - | 13b | 512 Mb | 0.004A | - | - | - | COMMON | - | - | - | - | - | 8192 | 1248FP | 1248 | - | 1.2mm | 22.22mm | - | - | - | ROHS3 Compliant | - | ||
| IS42S86400F-7TLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS43TR16128C-125KBLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
IC DRAM 2G PARALLEL 96TWBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | - | - | Surface Mount | 96-TFBGA | YES | - | Volatile | - | -40°C~95°C TC | Tray | e1 | - | Active | 3 (168 Hours) | 96 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | - | 1.425V~1.575V | BOTTOM | 260 | 1 | 1.5V | 0.8mm | 10 | - | R-PBGA-B96 | - | - | 1.575V | - | 1.425V | - | 2Gb 128M x 16 | 1 | - | SYNCHRONOUS | 800MHz | 20ns | DRAM | Parallel | - | 128MX16 | - | 16 | 15ns | - | - | - | 2147483648 bit | - | - | - | - | - | - | - | - | - | - | - | - | 1.2mm | 13mm | 9mm | - | - | ROHS3 Compliant | - | ||
| IS43TR16128C-125KBLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS64WV25616BLL-10CTLA3Anlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
4Mb, High-Speed/Low Power, Async, 256K x 16, 10ns, 2.4v-3.6v, 44 Pin TSOP II, RoHS, Automotive temp
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | - | - | Surface Mount | 44-TSOP (0.400, 10.16mm Width) | YES | 44 | Volatile | Automotive grade | -40°C~125°C TA | Tray | e3 | yes | Active | 3 (168 Hours) | 44 | - | Matte Tin (Sn) | - | - | 2.4V~3.6V | DUAL | 260 | 1 | 3.3V | 0.8mm | 10 | 44 | - | - | - | 3.6V | 2.5/3.3V | 2.4V | - | 4Mb 256K x 16 | 1 | 65mA | - | - | - | SRAM | Parallel | - | - | 3-STATE | 16 | 10ns | 18b | 4 Mb | - | - | - | - | COMMON | Asynchronous | 16b | - | 2V | - | - | - | - | - | - | - | - | No | - | ROHS3 Compliant | - | ||
| IS64WV25616BLL-10CTLA3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS42S16160J-7BLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 54TFBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Copper, Silver, Tin | Surface Mount | Surface Mount | 54-TFBGA | - | 54 | Volatile | Industrial grade | -40°C~85°C TA | Tray | e1 | - | Active | 3 (168 Hours) | 54 | - | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | - | 3V~3.6V | BOTTOM | - | 1 | 3.3V | 0.8mm | - | - | - | - | 3.3V | 3.6V | - | 3V | - | 256Mb 16M x 16 | 1 | - | SYNCHRONOUS | 143MHz | 5.4ns | DRAM | Parallel | 16b | 16MX16 | - | 16 | - | 13b | 256 Mb | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 1.2mm | 8mm | - | - | - | ROHS3 Compliant | - | ||
| IS42S16160J-7BLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS61NLF12836A-7.5TQLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
IC SRAM 4.5MBIT 117MHZ 100TQFP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | - | Surface Mount | 100-LQFP | YES | 100 | Volatile | Industrial grade | -40°C~85°C TA | Tray | e3 | yes | Active | 2 (1 Year) | 100 | 3A991.B.2.A | Matte Tin (Sn) - annealed | FLOW-THROUGH ARCHITECTURE | - | 3.135V~3.465V | QUAD | 260 | 1 | 3.3V | 0.65mm | 10 | 100 | - | - | 3.3V | - | - | 3.135V | - | 4.5Mb 128K x 36 | 4 | 160mA | - | 117MHz | 7.5ns | SRAM | Parallel | - | 128KX36 | 3-STATE | 36 | - | 17b | 4 Mb | 0.035A | - | - | - | COMMON | Synchronous | 36b | - | - | - | - | - | - | - | 1.6mm | 20mm | - | No | - | ROHS3 Compliant | - | ||
| IS61NLF12836A-7.5TQLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS61WV20488BLL-10MLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
INTEGRATED SILICON SOLUTION (ISSI) - IS61WV20488BLL-10MLI - SRAM, 16MBIT, 10NS, 48BGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | - | Surface Mount | 48-TFBGA | YES | 48 | Volatile | Industrial grade | -40°C~85°C TA | Tray | e1 | yes | Active | 3 (168 Hours) | 48 | - | Tin/Silver/Copper (Sn/Ag/Cu) | - | - | 2.4V~3.6V | BOTTOM | 260 | 1 | 3V | 0.75mm | 40 | 48 | - | - | - | 3.6V | 2.5/3.3V | 2.4V | - | 16Mb 2M x 8 | 1 | 100mA | - | - | - | SRAM | Parallel | - | 2MX8 | 3-STATE | 8 | 10ns | 21b | 16 Mb | 0.025A | - | - | - | COMMON | Asynchronous | 8b | - | - | - | - | - | - | - | - | - | - | No | No SVHC | ROHS3 Compliant | - | ||
| IS61WV20488BLL-10MLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS21ES08G-JCLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
IC FLASH 64GBIT EMMC 153VFBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | - | Surface Mount | 153-VFBGA | YES | - | Non-Volatile | - | -40°C~85°C TA | Tray | e1 | - | Active | 3 (168 Hours) | 153 | - | Tin/Silver/Copper (Sn/Ag/Cu) | - | - | 2.7V~3.6V | BOTTOM | NOT SPECIFIED | 1 | 3.3V | 0.5mm | NOT SPECIFIED | - | R-PBGA-B153 | - | - | 3.6V | - | 2.7V | - | 64Gb 8G x 8 | - | - | SYNCHRONOUS | 200MHz | - | FLASH | eMMC | - | 8GX8 | - | 8 | - | - | - | - | 68719476736 bit | - | PARALLEL | - | - | - | 3.3V | - | - | - | - | - | - | 1mm | 13mm | 11.5mm | - | - | ROHS3 Compliant | - | ||
| IS21ES08G-JCLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS64WV6416BLL-15BLA3Anlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
SRAM Chip Async Single 3.3V 1M-bit 64K x 16 15ns Automotive 48-Pin Mini-BGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | - | - | Surface Mount | 48-TFBGA | YES | 48 | Volatile | Automotive grade | -40°C~125°C TA | Tray | e1 | yes | Active | 2 (1 Year) | 48 | - | Tin/Silver/Copper (Sn/Ag/Cu) | - | - | 2.5V~3.6V | BOTTOM | 260 | 1 | 3V | 0.75mm | 10 | 48 | - | - | 3.3V | 3.6V | - | 2.5V | - | 1Mb 64K x 16 | 1 | 50mA | - | - | - | SRAM | Parallel | - | - | 3-STATE | 16 | 15ns | 16b | 1 Mb | 0.075A | - | - | - | COMMON | Asynchronous | 16b | - | - | - | - | - | - | - | - | 8mm | - | No | - | Non-RoHS Compliant | - | ||
| IS64WV6416BLL-15BLA3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS64C25616AL-12CTLA3Anlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
SRAM Chip Async Single 5V 4M-bit 256K x 16 12ns Automotive 44-Pin TSOP-II
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | - | Surface Mount | Surface Mount | 44-TSOP (0.400, 10.16mm Width) | - | 44 | Volatile | Automotive grade | -40°C~125°C TA | Tray | e3 | yes | Active | 3 (168 Hours) | 44 | - | Matte Tin (Sn) - annealed | - | - | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 0.8mm | 10 | 44 | - | - | 5V | - | - | - | - | 4Mb 256K x 16 | 1 | 55mA | - | - | - | SRAM | Parallel | - | - | - | 16 | 12ns | 18b | 4 Mb | - | - | - | - | - | Asynchronous | 16b | - | - | - | - | - | - | - | - | - | - | No | - | ROHS3 Compliant | - | ||
| IS64C25616AL-12CTLA3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS43DR16128C-3DBLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
IC DRAM 2G PARALLEL 84TWBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | - | Surface Mount | 84-TFBGA | YES | - | Volatile | Industrial grade | -40°C~85°C TA | Tray | - | - | Active | 3 (168 Hours) | 84 | EAR99 | - | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | - | 1.7V~1.9V | BOTTOM | - | 1 | 1.8V | 0.8mm | - | - | R-PBGA-B84 | Not Qualified | - | 1.9V | 1.8V | 1.7V | - | 2Gb 128M x 16 | 1 | - | SYNCHRONOUS | 333MHz | 450ps | DRAM | Parallel | - | 128MX16 | 3-STATE | 16 | 15ns | - | - | 0.03A | 2147483648 bit | - | - | COMMON | - | - | - | - | - | 8192 | 48 | 48 | - | 1.2mm | 12.5mm | 8mm | - | - | ROHS3 Compliant | - | ||
| IS43DR16128C-3DBLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS25WQ040-JNLE-TRAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
NOR Flash Serial-SPI 1.8V 4Mbit 4Mx 1bit 8ns 8-Pin SOIC T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Tin | Surface Mount | Surface Mount | 8-SOIC (0.209, 5.30mm Width) | - | 8 | Non-Volatile | - | -40°C~105°C TA | Tape & Reel (TR) | - | - | Active | 3 (168 Hours) | - | - | - | - | - | 1.65V~1.95V | - | - | - | - | - | - | - | - | - | 1.8V | - | - | - | SPI, Serial | 4Mb 512K x 8 | - | - | - | 104MHz | 8 ns | FLASH | SPI | - | - | - | - | 1ms | 19b | 32 Mb | - | - | - | - | - | - | - | - | - | 256B | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| IS25WQ040-JNLE-TR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS63LV1024L-10HLAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
SRAM Chip Async Single 3.3V 1M-bit 128K x 8 10ns 32-Pin STSOP-I
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | Surface Mount | Surface Mount | 32-TFSOP (0.465, 11.80mm Width) | - | 32 | Volatile | - | 0°C~70°C TA | Tray | e3 | yes | Last Time Buy | 2 (1 Year) | 32 | - | Matte Tin (Sn) - annealed | - | - | 3V~3.6V | DUAL | 260 | 1 | 3.3V | 0.5mm | 40 | 32 | - | - | 3.3V | 3.6V | - | 3V | - | 1Mb 128K x 8 | 1 | 150mA | - | - | - | SRAM | Parallel | - | - | 3-STATE | 8 | 10ns | 17b | 1 Mb | - | - | - | - | COMMON | Asynchronous | 8b | - | 2V | - | - | - | - | - | - | - | - | No | - | Non-RoHS Compliant | - | ||
| IS63LV1024L-10HL | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS42S32800B-7BLAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 90LFBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | Surface Mount | Surface Mount | 90-LFBGA | - | 90 | Volatile | - | 0°C~70°C TA | Tray | e1 | - | Obsolete | 3 (168 Hours) | 90 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 8542.32.00.24 | 3V~3.6V | BOTTOM | 260 | 1 | 3.3V | 0.8mm | 10 | 90 | - | Not Qualified | 3.3V | 3.6V | - | 3V | - | 256Mb 8M x 32 | 1 | 150mA | SYNCHRONOUS | 143MHz | 5.5ns | DRAM | Parallel | 32b | 8MX32 | - | 32 | - | 14b | 256 Mb | 0.002A | - | - | - | COMMON | - | - | - | - | - | 4096 | 1248FP | 1248 | - | 1.45mm | 13mm | - | - | - | RoHS Compliant | Lead Free | ||
| IS42S32800B-7BL | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS42S16320F-7TLI-TRAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
IC SDRAM 512MBIT 143MHZ 54TSOP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Tin | Surface Mount | Surface Mount | 54-TSOP (0.400, 10.16mm Width) | - | 54 | Volatile | Industrial grade | -40°C~85°C TA | Tape & Reel (TR) | - | yes | Active | 3 (168 Hours) | 54 | - | - | AUTO/SELF REFRESH | - | 3V~3.6V | DUAL | NOT SPECIFIED | 1 | 3.3V | 0.8mm | NOT SPECIFIED | - | - | - | 3.3V | 3.6V | - | 3V | - | 512Mb 32M x 16 | 1 | - | SYNCHRONOUS | 143MHz | 5.4ns | DRAM | Parallel | 16b | 32MX16 | - | 16 | - | 13b | 512 Mb | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 1.2mm | 22.22mm | - | - | - | ROHS3 Compliant | - | ||
| IS42S16320F-7TLI-TR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS61LPS25618A-200TQLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
IC SRAM 4.5MBIT 200MHZ 100TQFP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | - | Surface Mount | 100-LQFP | YES | 100 | Volatile | Industrial grade | -40°C~85°C TA | Tray | e3 | yes | Active | 2 (1 Year) | 100 | - | Matte Tin (Sn) - annealed | PIPELINED ARCHITECTURE | - | 3.135V~3.465V | QUAD | 260 | 1 | 3.3V | 0.65mm | 40 | 100 | - | - | 3.3V | 3.465V | - | 3.135V | - | 4.5Mb 256K x 18 | 2 | 210mA | - | 200MHz | 3.1ns | SRAM | Parallel | - | - | 3-STATE | 18 | - | 18b | 4.5 Mb | 0.000075A | - | - | - | COMMON | Synchronous | 18b | - | 3.14V | - | - | - | - | - | 1.6mm | - | - | No | - | ROHS3 Compliant | - | ||
| IS61LPS25618A-200TQLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS43TR16640B-15GBLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
IC DRAM 1G PARALLEL 96TWBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | - | - | Surface Mount | 96-TFBGA | YES | - | Volatile | - | -40°C~95°C TC | Tray | e1 | - | Active | 3 (168 Hours) | 96 | EAR99 | TIN SILVER COPPER | AUTO/SELF REFRESH | 8542.32.00.32 | 1.425V~1.575V | BOTTOM | NOT SPECIFIED | 1 | 1.5V | 0.8mm | NOT SPECIFIED | - | R-PBGA-B96 | - | - | 1.575V | - | 1.425V | - | 1Gb 64M x 16 | 1 | - | SYNCHRONOUS | 667MHz | 20ns | DRAM | Parallel | - | 64MX16 | - | 16 | 15ns | - | - | - | 1073741824 bit | - | - | - | - | - | - | - | - | - | - | - | - | 1.2mm | 13mm | 9mm | - | - | ROHS3 Compliant | - | ||
| IS43TR16640B-15GBLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS42S32800B-7TLAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
IC, SDRAM, 256MBIT, 143MHZ, TSOP-86
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | Surface Mount | Surface Mount | 86-TFSOP (0.400, 10.16mm Width) | - | 86 | Volatile | - | 0°C~70°C TA | Tray | e3 | - | Obsolete | 3 (168 Hours) | 86 | EAR99 | Matte Tin (Sn) - annealed | AUTO/SELF REFRESH | 8542.32.00.24 | 3V~3.6V | DUAL | 260 | 1 | 3.3V | 0.5mm | 40 | 86 | - | - | 3.3V | 3.6V | - | 3V | - | 256Mb 8M x 32 | 1 | 150mA | - | 143MHz | 5.5ns | DRAM | Parallel | 32b | 8MX32 | - | - | - | 14b | 256 Mb | 0.002A | - | - | - | COMMON | - | - | - | - | - | 4096 | - | - | 1.05mm | - | 22.42mm | 10.16mm | No | - | RoHS Compliant | Lead Free | ||
| IS42S32800B-7TL | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS62WV5128DBLL-45TLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
SRAM 4Mb 512K x 8 45ns Async SRAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | Surface Mount | 32-TFSOP (0.724, 18.40mm Width) | YES | 32 | Volatile | - | -40°C~85°C TA | Tray | - | - | Discontinued | 3 (168 Hours) | 32 | - | - | - | - | 2.3V~3.6V | DUAL | - | 1 | 3V | 0.5mm | - | 32 | - | - | - | 3.6V | 2.5/3.3V | 2.3V | - | 4Mb 512K x 8 | 1 | 20mA | - | - | - | SRAM | Parallel | - | - | 3-STATE | 8 | 45ns | 19b | 4 Mb | 0.000007A | - | 45 ns | - | COMMON | Asynchronous | 8b | - | - | - | - | - | - | - | - | 20mm | - | No | - | ROHS3 Compliant | - | ||
| IS62WV5128DBLL-45TLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS66WVE1M16EBLL-70BLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
PSRAM Async 16M-Bit 1M x 16 70ns 48-Pin TFBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | - | - | Surface Mount | 48-TFBGA | YES | 48 | Volatile | - | -40°C~85°C TA | Tray | - | - | Active | 3 (168 Hours) | 48 | - | - | - | - | 2.7V~3.6V | BOTTOM | NOT SPECIFIED | 1 | - | 0.75mm | NOT SPECIFIED | - | - | - | - | 3.6V | - | 2.7V | - | 16Mb 1M x 16 | 1 | - | ASYNCHRONOUS | - | - | PSRAM | Parallel | - | - | - | 16 | 70ns | 20b | 16 Mb | - | - | 70 ns | - | - | - | - | - | - | - | - | - | - | - | - | 8mm | - | - | - | ROHS3 Compliant | - | ||
| IS66WVE1M16EBLL-70BLI |
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ