| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Contact Plating | Mount | Mounting Type | Package / Case | Surface Mount | Number of Pins | Weight | Memory Types | Usage Level | Operating Temperature | Packaging | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Voltage - Supply | Terminal Position | Peak Reflow Temperature (Cel) | Number of Functions | Supply Voltage | Terminal Pitch | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Supply Voltage-Min (Vsup) | Memory Size | Number of Ports | Nominal Supply Current | Operating Mode | Max Supply Current | Clock Frequency | Access Time | Memory Format | Memory Interface | Data Bus Width | Organization | Output Characteristics | Memory Width | Write Cycle Time - Word, Page | Address Bus Width | Density | Standby Current-Max | Memory Density | Max Frequency | Access Time (Max) | Parallel/Serial | I/O Type | Sync/Async | Word Size | Programming Voltage | Standby Voltage-Min | Alternate Memory Width | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Height Seated (Max) | Length | Width | Radiation Hardening | RoHS Status | Lead Free |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипIS61WV12816DBLL-10BLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
SRAM Chip Async Single 2.5V/3.3V 2M-bit 128K x 16 10ns 48-Pin Mini-BGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | - | Surface Mount | 48-TFBGA | YES | 48 | - | Volatile | Industrial grade | -40°C~85°C TA | Tray | e1 | yes | Active | 3 (168 Hours) | 48 | - | Tin/Silver/Copper (Sn/Ag/Cu) | - | - | 3V~3.6V | BOTTOM | 260 | 1 | 3.3V | 0.75mm | 10 | 48 | - | - | - | 3.6V | 2.5/3.3V | 2.4V | 2Mb 128K x 16 | 1 | 65mA | - | - | - | - | SRAM | Parallel | - | - | 3-STATE | 16 | 10ns | 17b | 2 Mb | 0.00007A | - | 100MHz | - | - | COMMON | Asynchronous | 16b | - | 2V | - | - | - | - | - | 8mm | - | No | ROHS3 Compliant | - | ||
| IS61WV12816DBLL-10BLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS61LF25636A-7.5TQLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
IC SRAM 9M PARALLEL 100TQFP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | - | Surface Mount | 100-LQFP | YES | 100 | 657.000198mg | Volatile | Industrial grade | -40°C~85°C TA | Tray | e3 | yes | Active | 2 (1 Year) | 100 | 3A991.B.2.A | Matte Tin (Sn) - annealed | FLOW-THROUGH ARCHITECTURE | - | 3.135V~3.6V | QUAD | 260 | 1 | 3.3V | 0.65mm | 40 | 100 | - | - | 3.3V | - | - | 3.135V | 9Mb 256K x 36 | 4 | 185mA | - | 185mA | 117MHz | 7.5ns | SRAM | Parallel | - | 256KX36 | 3-STATE | 36 | - | 18b | 9 Mb | 0.085A | - | - | - | - | COMMON | Synchronous | 36b | - | - | - | - | - | - | 1.6mm | 20mm | - | No | ROHS3 Compliant | - | ||
| IS61LF25636A-7.5TQLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS43DR16640B-25DBLAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
1G, 1.8V, DDR2, 64Mx16, 400Mhz @ CL5, 84 ball BGA (8mmx12.5mm) RoHS
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | Surface Mount | Surface Mount | 84-TFBGA | - | 84 | - | Volatile | - | 0°C~70°C TA | Tray | - | - | Active | 3 (168 Hours) | 84 | EAR99 | - | AUTO/SELF REFRESH | 8542.32.00.32 | 1.7V~1.9V | BOTTOM | - | 1 | 1.8V | 0.8mm | - | - | - | Not Qualified | 1.8V | 1.9V | - | 1.7V | 1Gb 64M x 16 | 1 | 240mA | SYNCHRONOUS | - | 400MHz | 400ps | DRAM | Parallel | 16b | 64MX16 | 3-STATE | 16 | 15ns | 16b | 1 Gb | 0.015A | - | - | - | - | COMMON | - | - | - | - | - | 8192 | 48 | 48 | 1.2mm | 12.5mm | - | - | ROHS3 Compliant | - | ||
| IS43DR16640B-25DBL | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS61DDB22M18A-250M3LAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
SRAM 36Mb 250Mhz 2Mx18 DDR-II Sync SRAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | Surface Mount | 165-LBGA | YES | 165 | - | Volatile | Commercial grade | 0°C~70°C TA | Tray | e1 | yes | Discontinued | 3 (168 Hours) | 165 | - | Tin/Silver/Copper (Sn/Ag/Cu) | PIPELINED ARCHITECTURE | - | 1.71V~1.89V | BOTTOM | 260 | 1 | 1.8V | - | 40 | 165 | - | - | 1.8V | - | - | - | 36Mb 2M x 18 | 1 | 500mA | - | - | 250MHz | 8.4ns | SRAM | Parallel | - | - | - | 18 | - | 21b | 36 Mb | - | - | - | - | - | - | Synchronous | 18b | - | - | - | - | - | - | - | - | - | No | ROHS3 Compliant | - | ||
| IS61DDB22M18A-250M3L | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS61LV2568L-10TAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
SRAM Chip Async Single 3.3V 2M-bit 256K x 8 10ns 44-Pin TSOP-II
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | Surface Mount | 44-TSOP (0.400, 10.16mm Width) | YES | 44 | - | Volatile | - | 0°C~70°C TA | Tray | e0 | no | Not For New Designs | 2 (1 Year) | 44 | - | Tin/Lead (Sn/Pb) | - | - | 3.135V~3.6V | DUAL | NOT SPECIFIED | 1 | 3.3V | 0.8mm | NOT SPECIFIED | 44 | - | Not Qualified | 3.3V | 3.63V | - | 2.97V | 2Mb 256K x 8 | 1 | 60mA | - | - | - | - | SRAM | Parallel | - | 256KX8 | 3-STATE | 8 | 10ns | 18b | 2 Mb | 0.003A | - | - | - | - | COMMON | Asynchronous | 8b | - | 3V | - | - | - | - | - | - | - | - | Non-RoHS Compliant | - | ||
| IS61LV2568L-10T | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS42S16400F-6TLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
IC SDRAM 64MBIT 166MHZ 54TSOP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | Surface Mount | Surface Mount | 54-TSOP (0.400, 10.16mm Width) | - | 54 | - | Volatile | - | -40°C~85°C TA | Tray | e3 | yes | Obsolete | 3 (168 Hours) | 54 | EAR99 | Matte Tin (Sn) - annealed | AUTO/SELF REFRESH | - | 3V~3.6V | DUAL | 260 | 1 | 3.3V | 0.8mm | 10 | 54 | - | - | 3.3V | 3.6V | - | 3V | 64Mb 4M x 16 | 1 | 140mA | - | 140mA | 166MHz | 5.4ns | DRAM | Parallel | 16b | 4MX16 | 3-STATE | 16 | - | 14b | 64 Mb | 0.003A | - | - | - | - | COMMON | - | - | - | - | - | 4096 | 1248FP | 1248 | 1.2mm | 22.22mm | - | No | RoHS Compliant | - | ||
| IS42S16400F-6TLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS42S16100E-6TLAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
IC DRAM 16M PARALLEL 50TSOP II
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | Surface Mount | Surface Mount | 50-TSOP (0.400, 10.16mm Width) | - | 50 | - | Volatile | - | 0°C~70°C TA | Tray | e3 | yes | Obsolete | 2 (1 Year) | 50 | EAR99 | Matte Tin (Sn) - annealed | AUTO/SELF REFRESH | 8542.32.00.02 | 3V~3.6V | DUAL | 260 | 1 | 3.3V | 0.8mm | 40 | 50 | - | - | 3.3V | 3.6V | - | 3V | 16Mb 1M x 16 | 1 | 150mA | - | - | 166MHz | 5.5ns | DRAM | Parallel | 16b | 1MX16 | 3-STATE | 16 | - | 12b | 16 Mb | 0.002A | - | - | - | - | COMMON | - | - | - | - | - | 2048 | 1248FP | 1248 | 1.2mm | 20.95mm | - | No | RoHS Compliant | - | ||
| IS42S16100E-6TL | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS43DR16128B-3DBLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
DRAM Chip DDR2 SDRAM 2Gbit 128Mx16 1.8V
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | Surface Mount | 84-TFBGA | YES | - | - | Volatile | - | -40°C~85°C TA | Tray | - | - | Active | 3 (168 Hours) | 84 | EAR99 | - | AUTO/SELF REFRESH | 8542.32.00.36 | 1.7V~1.9V | BOTTOM | - | 1 | 1.8V | 0.8mm | - | - | R-PBGA-B84 | Not Qualified | - | 1.9V | 1.8V | 1.7V | 2Gb 128M x 16 | 1 | - | SYNCHRONOUS | - | 333MHz | 450ps | DRAM | Parallel | - | 128MX16 | 3-STATE | 16 | 15ns | - | - | 0.03A | 2147483648 bit | - | - | - | COMMON | - | - | - | - | - | 8192 | 48 | 48 | 1.2mm | 13.5mm | 10.5mm | - | ROHS3 Compliant | - | ||
| IS43DR16128B-3DBLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS42S32800J-6TLAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
256M, 3.3V, SDRAM, 8Mx32, 166Mhz, 86 pin TSOP II RoHS
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | - | Surface Mount | 86-TFSOP (0.400, 10.16mm Width) | YES | 86 | - | Volatile | Commercial grade | 0°C~70°C TA | Tray | - | - | Active | 3 (168 Hours) | 86 | - | - | AUTO/SELF REFRESH | - | 3V~3.6V | DUAL | NOT SPECIFIED | 1 | 3.3V | 0.5mm | NOT SPECIFIED | - | - | - | - | 3.6V | - | 3V | 256Mb 8M x 32 | 1 | - | SYNCHRONOUS | - | 166MHz | 5.4ns | DRAM | Parallel | - | 8MX32 | - | 32 | - | - | - | - | 268435456 bit | - | - | - | - | - | - | - | - | - | - | - | - | 1.2mm | 22.22mm | 10.16mm | - | ROHS3 Compliant | - | ||
| IS42S32800J-6TL | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS66WV51216BLL-55BLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
IC PSRAM 8M PARALLEL 48MINIBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | Surface Mount | Surface Mount | 48-TFBGA | - | 48 | - | Volatile | - | -40°C~85°C TA | Tray | e1 | yes | Obsolete | 3 (168 Hours) | 48 | 3A991.B.2.A | Tin/Silver/Copper (Sn/Ag/Cu) | - | 8542.32.00.41 | 2.5V~3.6V | BOTTOM | 260 | 1 | 3V | 0.75mm | 40 | 48 | - | Not Qualified | - | 3.6V | 3/3.3V | 2.5V | 8Mb 512K x 16 | - | - | ASYNCHRONOUS | - | - | - | PSRAM | Parallel | - | 512KX16 | 3-STATE | 16 | 55ns | - | - | 0.0001A | 8388608 bit | - | 55 ns | - | COMMON | - | - | - | - | - | - | - | - | 1.2mm | 8mm | 6mm | - | RoHS Compliant | - | ||
| IS66WV51216BLL-55BLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS62WV5128DBLL-45BLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
4Mb, Low Power/Power Saver, Async, 512K x 8, 45ns, 2.3v3.6v, 36 Ball mBGA (6x8 mm), Leadfree
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | Surface Mount | 36-TFBGA | YES | 48 | - | Volatile | - | -40°C~85°C TA | Tray | - | - | Discontinued | 3 (168 Hours) | 36 | - | - | - | - | 2.3V~3.6V | BOTTOM | - | 1 | 3V | 0.75mm | - | 36 | R-PBGA-B36 | - | - | 3.6V | 2.5/3.3V | 2.3V | 4Mb 512K x 8 | 1 | 20mA | - | - | - | - | SRAM | Parallel | - | - | 3-STATE | 8 | 45ns | 19b | 4 Mb | 0.000007A | - | - | 45 ns | - | COMMON | Asynchronous | 8b | - | - | - | - | - | - | - | 8mm | - | No | ROHS3 Compliant | - | ||
| IS62WV5128DBLL-45BLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS62WVS2568FBLL-20NLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
IC SRAM 2M SPI 20MHZ 8SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | - | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | YES | - | - | Volatile | - | -40°C~85°C TA | Tube | - | - | Active | 2 (1 Year) | 8 | - | - | - | - | 2.2V~3.6V | DUAL | NOT SPECIFIED | 1 | - | 1.27mm | NOT SPECIFIED | - | R-PDSO-G8 | - | - | 3.6V | - | 2.2V | 2Mb 256K x 8 | - | - | - | - | 20MHz | - | SRAM | SPI - Quad I/O, SDI, DTR | - | 256KX8 | - | 8 | - | - | - | - | 2097152 bit | - | - | SERIAL | - | - | - | - | - | - | - | - | - | 1.75mm | 4.9mm | 3.9mm | - | ROHS3 Compliant | - | ||
| IS62WVS2568FBLL-20NLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS42S16400J-7TL-TRAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
64M, 3.3V, SDRAM, 4MX16, 143MH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | - | - | Surface Mount | 54-TSOP (0.400, 10.16mm Width) | YES | 54 | - | Volatile | Commercial grade | 0°C~70°C TA | Tape & Reel (TR) | - | - | Active | 3 (168 Hours) | 54 | - | - | - | - | 3V~3.6V | DUAL | - | - | 3.3V | 0.8mm | - | - | - | Not Qualified | - | - | 3.3V | - | 64Mb 4M x 16 | - | - | - | - | 143MHz | 5.4ns | DRAM | Parallel | 16b | 4MX16 | 3-STATE | 16 | - | - | - | 0.002A | 67108864 bit | - | - | - | COMMON | - | - | - | - | - | 4096 | 1248FP | 1248 | - | - | - | - | ROHS3 Compliant | - | ||
| IS42S16400J-7TL-TR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS42S32200C1-7TLAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
IC DRAM 64M PARALLEL 86TSOP II
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | Surface Mount | Surface Mount | 86-TFSOP (0.400, 10.16mm Width) | - | 86 | - | Volatile | - | 0°C~70°C TA | Tray | e3 | - | Obsolete | 3 (168 Hours) | 86 | EAR99 | Matte Tin (Sn) - annealed | AUTO/SELF REFRESH | 8542.32.00.02 | 3.15V~3.45V | DUAL | 260 | 1 | 3.3V | 0.5mm | 40 | 86 | - | - | 3.3V | 3.6V | - | 3V | 64Mb 2M x 32 | 1 | 180mA | - | - | 143MHz | 5.5ns | DRAM | Parallel | 32b | 2MX32 | 3-STATE | 32 | - | 13b | 64 Mb | 0.002A | - | - | - | - | COMMON | - | - | - | - | - | 4096 | 1248FP | 1248 | 1.2mm | 22.22mm | - | No | RoHS Compliant | Lead Free | ||
| IS42S32200C1-7TL | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS66WV51216DBLL-70TLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
PSRAM Async Single 8M-bit 512K x 16 70ns 44-Pin TSOP-II
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | Surface Mount | 44-TSOP (0.400, 10.16mm Width) | YES | 44 | - | Volatile | - | -40°C~85°C TA | Tray | - | - | Discontinued | 3 (168 Hours) | 44 | - | - | - | - | 2.5V~3.6V | DUAL | - | 1 | 3V | 0.8mm | - | 44 | - | - | 3.3V | 3.6V | - | 2.5V | 8Mb 512K x 16 | 1 | - | - | - | - | - | PSRAM | Parallel | - | - | 3-STATE | 16 | 70ns | 19b | 8 Mb | - | - | - | 70 ns | - | COMMON | - | - | - | - | - | - | - | - | - | - | - | No | ROHS3 Compliant | Lead Free | ||
| IS66WV51216DBLL-70TLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS25LP512M-RMLEAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
IC FLASH 512M SPI 133MHZ 16SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | - | Surface Mount | 16-SOIC (0.295, 7.50mm Width) | YES | - | - | Non-Volatile | - | -40°C~105°C TA | Tube | e3 | - | Active | 3 (168 Hours) | 16 | 3A991.B.1.A | Tin (Sn) | - | 8542.32.00.51 | 2.3V~3.6V | DUAL | 260 | 1 | 3V | 1.27mm | 10 | - | R-PDSO-G16 | - | - | 3.6V | - | 2.3V | 512Mb 64M x 8 | - | - | SYNCHRONOUS | - | 133MHz | - | FLASH | SPI - Quad I/O, QPI, DTR | - | 64MX8 | - | 8 | 1.6ms | - | - | - | 536870912 bit | - | - | SERIAL | - | - | - | 3V | - | 1 | - | - | - | 2.65mm | 10.31mm | 7.49mm | - | ROHS3 Compliant | - | ||
| IS25LP512M-RMLE | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS34ML04G084-TLI-TRAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
IC FLASH 4G PARALLEL 48TSOP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | - | Surface Mount | 48-TFSOP (0.724, 18.40mm Width) | YES | - | - | Non-Volatile | - | -40°C~85°C TA | Tape & Reel (TR) | - | - | Active | 3 (168 Hours) | 48 | - | - | - | - | 2.7V~3.6V | DUAL | NOT SPECIFIED | 1 | 3.3V | 0.5mm | NOT SPECIFIED | - | R-PDSO-G48 | - | - | 3.6V | - | 2.7V | 4Gb 512M x 8 | - | - | SYNCHRONOUS | - | - | - | FLASH | Parallel | - | 512MX8 | - | 8 | 25ns | - | - | - | 4294967296 bit | - | - | - | - | - | - | 3.3V | - | - | - | - | - | 1.2mm | 18.4mm | 12mm | - | ROHS3 Compliant | - | ||
| IS34ML04G084-TLI-TR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS42RM16160D-7BLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
DRAM Chip Mobile SDRAM 256Mbit 16Mx16 2.5V 54-Pin TFBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Copper, Silver, Tin | Surface Mount | Surface Mount | 54-TFBGA | - | 54 | - | Volatile | - | -40°C~85°C TA | Tray | e1 | yes | Discontinued | 3 (168 Hours) | 54 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | - | 2.3V~2.7V | BOTTOM | 260 | 1 | 2.5V | 0.8mm | 10 | 54 | - | - | 2.5V | 2.7V | - | 2.3V | 256Mb 16M x 16 | 1 | 110mA | - | - | - | 5.4ns | DRAM | Parallel | 16b | 16MX16 | 3-STATE | 16 | - | 15b | 256 Mb | 0.001A | - | 143MHz | - | - | COMMON | - | - | - | - | - | 8192 | 1248FP | 1248 | 1.2mm | 13mm | - | No | ROHS3 Compliant | Lead Free | ||
| IS42RM16160D-7BLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS46LR32160B-6BLA2Anlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
DRAM 512M (16Mx32) 1.8v Mobile DDR SDRAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 14 Weeks | - | - | Surface Mount | 90-TFBGA | YES | 90 | - | Volatile | Automotive grade | -40°C~105°C TA | Tray | e1 | yes | Active | 3 (168 Hours) | 90 | EAR99 | TIN SILVER COPPER | AUTO/SELF REFRESH | 8542.32.00.28 | 1.7V~1.95V | BOTTOM | 260 | 1 | 1.8V | 0.8mm | 40 | 90 | - | - | 1.8V | 1.95V | - | 1.7V | 512Mb 16M x 32 | 1 | - | - | - | 166MHz | 5.5ns | DRAM | Parallel | 32b | 16MX32 | 3-STATE | 32 | 12ns | 15b | 512 Mb | 0.00001A | - | - | - | - | COMMON | - | - | - | - | - | 8192 | 24816 | 24816 | 1.2mm | 13mm | - | No | ROHS3 Compliant | - | ||
| IS46LR32160B-6BLA2 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS42S16100H-6TLI-TRAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
IC DRAM 16M PARALLEL 50TSOP II
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | - | - | Surface Mount | 50-TSOP (0.400, 10.16mm Width) | - | - | - | Volatile | Industrial grade | -40°C~85°C TA | Tape & Reel (TR) | - | - | Active | 3 (168 Hours) | - | - | - | - | - | 3V~3.6V | - | - | - | - | - | - | - | - | - | - | - | - | - | 16Mb 1M x 16 | - | - | - | - | 166MHz | 5.5ns | DRAM | Parallel | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| IS42S16100H-6TLI-TR |
Индекс :
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