| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Contact Plating | Mount | Mounting Type | Package / Case | Surface Mount | Number of Pins | Memory Types | Usage Level | Operating Temperature | Packaging | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Voltage - Supply | Terminal Position | Peak Reflow Temperature (Cel) | Number of Functions | Supply Voltage | Terminal Pitch | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Supply Voltage-Min (Vsup) | Memory Size | Number of Ports | Nominal Supply Current | Operating Mode | Max Supply Current | Clock Frequency | Access Time | Memory Format | Memory Interface | Data Bus Width | Organization | Output Characteristics | Memory Width | Write Cycle Time - Word, Page | Address Bus Width | Density | Standby Current-Max | Memory Density | Access Time (Max) | Parallel/Serial | I/O Type | Sync/Async | Word Size | Programming Voltage | Standby Voltage-Min | Output Enable | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Self Refresh | Height Seated (Max) | Length | Width | Radiation Hardening | RoHS Status |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипIS43DR16160A-37CBLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 84TWBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Copper, Silver, Tin | Surface Mount | Surface Mount | 84-TFBGA | - | 84 | Volatile | - | -40°C~85°C TA | Tray | e1 | yes | Obsolete | 3 (168 Hours) | 84 | EAR99 | TIN SILVER COPPER | AUTO/SELF REFRESH | 8542.32.00.24 | 1.7V~1.9V | BOTTOM | 260 | 1 | 1.8V | 0.8mm | 40 | 84 | - | - | 1.8V | 1.9V | - | 1.7V | 256Mb 16M x 16 | 1 | 270mA | - | - | 266MHz | 500ps | DRAM | Parallel | 16b | 16MX16 | 3-STATE | 16 | 15ns | 15b | 256 Mb | 0.005A | - | - | - | COMMON | - | - | - | - | - | 8192 | 48 | 48 | - | 1.2mm | 12.5mm | - | No | RoHS Compliant | ||
| IS43DR16160A-37CBLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS61WV25616EDBLL-10BLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
4Mb, High-Speed/Low Power, Async, 256K x 16, 8ns/3.3v, or 10ns/2.4v-3.6v, 48 Ball mBGA (6x8 mm), RoHS
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | - | Surface Mount | 48-TFBGA | YES | 48 | Volatile | Industrial grade | -40°C~85°C TA | Tray | e3 | yes | Active | 3 (168 Hours) | 48 | - | MATTE TIN | - | - | 2.4V~3.6V | BOTTOM | 225 | 1 | 3V | 0.75mm | NOT SPECIFIED | - | - | Not Qualified | - | 3.6V | 2.5/3.3V | 2.4V | 4Mb 256K x 16 | - | - | - | - | - | - | SRAM | Parallel | - | 1MX16 | 3-STATE | 16 | 10ns | - | - | 0.006A | 16777216 bit | 10 ns | - | COMMON | - | - | - | 2V | - | - | - | - | - | 1.2mm | 8mm | 6mm | - | ROHS3 Compliant | ||
| IS61WV25616EDBLL-10BLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS42S32400F-6TL-TRAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
DRAM 128M 4Mx32 166Mhz SDRAM, 3.3v
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | - | Surface Mount | 86-TFSOP (0.400, 10.16mm Width) | YES | 86 | Volatile | Commercial grade | 0°C~70°C TA | Tape & Reel (TR) | - | - | Active | 3 (168 Hours) | 86 | - | - | - | - | 3V~3.6V | DUAL | - | - | 3.3V | 0.5mm | - | - | - | Not Qualified | - | - | 3.3V | - | 128Mb 4M x 32 | - | - | - | - | 166MHz | 5.4ns | DRAM | Parallel | 32b | 4MX32 | 3-STATE | 32 | - | - | - | 0.002A | 134217728 bit | - | - | COMMON | - | - | - | - | - | 4096 | 1248FP | 1248 | - | - | - | - | - | ROHS3 Compliant | ||
| IS42S32400F-6TL-TR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS34ML02G084-TLI-TRAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
IC FLASH 2G PARALLEL 48TSOP I
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | - | Surface Mount | 48-TFSOP (0.724, 18.40mm Width) | YES | - | Non-Volatile | - | -40°C~85°C | Tape & Reel (TR) | - | - | Active | 3 (168 Hours) | 48 | - | - | - | - | 2.7V~3.6V | DUAL | NOT SPECIFIED | 1 | 3.3V | 0.5mm | NOT SPECIFIED | - | R-PDSO-G48 | - | - | 3.6V | - | 2.7V | 2Gb 256M x 8 | - | - | ASYNCHRONOUS | - | - | - | FLASH | Parallel | - | 256MX8 | - | 8 | 25ns | - | - | - | 2147483648 bit | - | - | - | - | - | 3.3V | - | - | - | - | - | - | 1.2mm | 18.4mm | 12mm | - | ROHS3 Compliant | ||
| IS34ML02G084-TLI-TR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS34ML01G084-TLI-TRAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
IC FLASH 1G PARALLEL 48TSOP I
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | - | Surface Mount | 48-TFSOP (0.724, 18.40mm Width) | YES | - | Non-Volatile | - | -40°C~85°C | Tape & Reel (TR) | - | - | Active | 3 (168 Hours) | 48 | - | - | - | - | 2.7V~3.6V | DUAL | NOT SPECIFIED | 1 | 3.3V | 0.5mm | NOT SPECIFIED | - | R-PDSO-G48 | - | - | 3.6V | - | 2.7V | 1Gb 128M x 8 | - | - | ASYNCHRONOUS | - | - | - | FLASH | Parallel | - | 128MX8 | - | 8 | 25ns | - | - | - | 1073741824 bit | - | - | - | - | - | 3.3V | - | - | - | - | - | - | 1.2mm | 18.4mm | 12mm | - | ROHS3 Compliant | ||
| IS34ML01G084-TLI-TR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS43TR16256A-125KBLAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
DRAM 4G, 1.5V, 1600Mhz DDR3 SDRAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | - | Surface Mount | Surface Mount | 96-TFBGA | - | 96 | Volatile | - | 0°C~95°C TC | Tray | - | - | Active | 3 (168 Hours) | 96 | EAR99 | - | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | - | 1.425V~1.575V | BOTTOM | - | 1 | 1.5V | 0.8mm | - | - | - | - | 1.5V | 1.575V | - | 1.425V | 4Gb 256M x 16 | 1 | 230mA | SYNCHRONOUS | 290mA | 800MHz | 20ns | DRAM | Parallel | 16b | 256MX16 | - | 16 | 15ns | 18b | 4 Gb | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 1.2mm | 13mm | - | - | ROHS3 Compliant | ||
| IS43TR16256A-125KBL | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS42S32800D-6TLAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
DRAM Chip SDRAM 256Mbit 8Mx32 3.3V 86-Pin TSOP-II
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Tin | Surface Mount | Surface Mount | 86-TFSOP (0.400, 10.16mm Width) | - | 86 | Volatile | - | 0°C~70°C TA | Tray | e3 | yes | Obsolete | 3 (168 Hours) | 86 | EAR99 | - | AUTO/SELF REFRESH | 8542.32.00.24 | 3V~3.6V | DUAL | 260 | 1 | 3.3V | 0.5mm | 40 | 86 | - | - | 3.3V | 3.6V | - | 3V | 256Mb 8M x 32 | 1 | 180mA | - | - | 166MHz | 5.4ns | DRAM | Parallel | 32b | 8MX32 | - | 32 | - | 13b | 256 Mb | 0.003A | - | - | - | COMMON | - | - | - | - | - | 4096 | 1248FP | 1248 | - | 1.2mm | 22.22mm | - | No | RoHS Compliant | ||
| IS42S32800D-6TL | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS25WP064A-JKLEAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
NOR Flash Serial (SPI, Dual SPI, Quad SPI) 1.8V 64M-bit 8ns 8-Pin WSON EP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | - | Surface Mount | 8-WDFN Exposed Pad | YES | - | Non-Volatile | - | -40°C~105°C TA | Tray | e3 | - | Active | 3 (168 Hours) | 8 | - | Tin (Sn) | - | - | 1.65V~1.95V | DUAL | NOT SPECIFIED | 1 | 1.8V | 1.27mm | NOT SPECIFIED | - | R-PDSO-N8 | - | - | 1.95V | - | 1.65V | 64Mb 8M x 8 | - | - | SYNCHRONOUS | - | 133MHz | - | FLASH | SPI - Quad I/O, QPI, DTR | - | 8MX8 | - | 8 | 800μs | - | - | - | 67108864 bit | - | SERIAL | - | - | - | 1.8V | - | - | - | - | - | - | 0.8mm | 6mm | 5mm | - | ROHS3 Compliant | ||
| IS25WP064A-JKLE | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS62C256-70UAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
SRAM Chip Async Single 5V 256K-bit 32K x 8 70ns 28-Pin SOP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | Surface Mount | Surface Mount | 28-SOP | - | 28 | Volatile | - | 0°C~70°C TA | Tube | e0 | no | Obsolete | 2 (1 Year) | 28 | EAR99 | Tin/Lead (Sn/Pb) | - | - | 4.5V~5.5V | DUAL | 240 | 1 | 5V | - | 30 | 28 | - | - | 5V | - | 5V | - | 256Kb 32K x 8 | 1 | 60mA | - | - | - | - | SRAM | Parallel | - | 32KX8 | 3-STATE | 8 | 70ns | 15b | 256 kb | 0.0002A | - | 70 ns | - | COMMON | Asynchronous | 8b | - | 2V | YES | - | - | - | - | 2.8448mm | - | - | No | Non-RoHS Compliant | ||
| IS62C256-70U | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS61WV25616BLS-25TLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
SRAM Chip Async Single 2.5V/3.3V 4M-bit 256K x 16 25ns 44-Pin TSOP-II
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | Surface Mount | Surface Mount | 44-TSOP (0.400, 10.16mm Width) | - | 44 | Volatile | - | -40°C~85°C TA | Tray | e3 | yes | Active | 3 (168 Hours) | 44 | - | Matte Tin (Sn) - annealed | - | - | 2.4V~3.6V | DUAL | 260 | 1 | 3.3V | 0.8mm | 10 | 44 | - | - | - | 3.6V | 2.5/3.3V | 2.4V | 4Mb 256K x 16 | 1 | 25mA | - | - | - | - | SRAM | Parallel | - | - | 3-STATE | 16 | 25ns | 18b | 4 Mb | 0.009A | - | 25 ns | - | COMMON | Asynchronous | 16b | - | 2V | - | - | - | - | - | - | - | - | No | ROHS3 Compliant | ||
| IS61WV25616BLS-25TLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS42S32800B-7TLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 86TSOP II
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | Surface Mount | Surface Mount | 86-TFSOP (0.400, 10.16mm Width) | - | 86 | Volatile | - | -40°C~85°C TA | Tray | e3 | - | Obsolete | 2 (1 Year) | 86 | EAR99 | Matte Tin (Sn) - annealed | AUTO/SELF REFRESH | 8542.32.00.24 | 3V~3.6V | DUAL | 260 | 1 | 3.3V | 0.5mm | 40 | 86 | - | - | 3.3V | 3.6V | - | 3V | 256Mb 8M x 32 | 1 | 150mA | - | - | 143MHz | 5.5ns | DRAM | Parallel | 32b | 8MX32 | - | 32 | - | 14b | 256 Mb | 0.002A | - | - | - | COMMON | - | - | - | - | - | 4096 | 1248FP | 1248 | - | 1.2mm | 22.22mm | - | No | RoHS Compliant | ||
| IS42S32800B-7TLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS42S16400F-6TLAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
IC SDRAM 64MBIT 166MHZ 54TSOP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | Surface Mount | Surface Mount | 54-TSOP (0.400, 10.16mm Width) | - | 54 | Volatile | - | 0°C~70°C TA | Tray | e3 | yes | Obsolete | 3 (168 Hours) | 54 | EAR99 | Matte Tin (Sn) - annealed | AUTO/SELF REFRESH | - | 3V~3.6V | DUAL | 260 | 1 | 3.3V | 0.8mm | 10 | 54 | - | - | 3.3V | 3.6V | - | 3V | 64Mb 4M x 16 | 1 | 130mA | - | 130mA | 166MHz | 5.4ns | DRAM | Parallel | 16b | 4MX16 | 3-STATE | 16 | - | 14b | 64 Mb | 0.002A | - | - | - | COMMON | - | - | - | - | - | 4096 | 1248FP | 1248 | - | 1.2mm | 22.22mm | - | No | RoHS Compliant | ||
| IS42S16400F-6TL | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS41LV16100B-50TLAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
DRAM Chip EDO 16M-Bit 1Mx16 3.3V 44-Pin TSOP-II
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | Surface Mount | Surface Mount | 44-TSOP (0.400, 10.16mm Width) | - | 44 | Volatile | - | 0°C~70°C TA | Tray | e3 | yes | Obsolete | 2 (1 Year) | 44 | EAR99 | Matte Tin (Sn) - annealed | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | 8542.32.00.02 | 3V~3.6V | DUAL | 260 | 1 | 3.3V | 0.8mm | 10 | 50 | - | Not Qualified | 3.3V | 3.6V | - | 3V | 16Mb 1M x 16 | 1 | 180mA | ASYNCHRONOUS | - | - | 25ns | DRAM | Parallel | 16b | 1MX16 | 3-STATE | 16 | - | 10b | 16 Mb | 0.002A | - | - | - | COMMON | - | - | - | - | - | 1024 | - | - | NO | 1.2mm | 20.95mm | - | - | RoHS Compliant | ||
| IS41LV16100B-50TL | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS42S16100C1-7TLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
IC DRAM 16M PARALLEL 50TSOP II
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | Surface Mount | Surface Mount | 50-TSOP (0.400, 10.16mm Width) | - | 50 | Volatile | - | -40°C~85°C TA | Tray | e3 | - | Obsolete | 2 (1 Year) | 50 | EAR99 | Matte Tin (Sn) - annealed | AUTO/SELF REFRESH | 8542.32.00.02 | 3V~3.6V | DUAL | 260 | 1 | 3.3V | 0.8mm | 40 | 50 | - | Not Qualified | 3.3V | 3.6V | - | 3V | 16Mb 1M x 16 | 1 | 150mA | SYNCHRONOUS | - | 143MHz | 5.5ns | DRAM | Parallel | 16b | 1MX16 | 3-STATE | 16 | - | 12b | 16 Mb | 0.003A | - | - | - | COMMON | - | - | - | - | - | 4096 | 1248FP | 1248 | - | 1.2mm | 20.95mm | - | - | RoHS Compliant | ||
| IS42S16100C1-7TLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS42S16160J-6BLI-TRAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
256M, 3.3V, SDRAM, 16Mx16, 166Mhz, 54 ball BGA (8mmx8mm) RoHS, IT, T&R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | - | - | Surface Mount | 54-TFBGA | - | - | Volatile | Industrial grade | -40°C~85°C TA | Tape & Reel (TR) | - | yes | Active | 3 (168 Hours) | - | - | - | - | - | 3V~3.6V | - | - | - | - | - | - | - | - | - | - | - | - | - | 256Mb 16M x 16 | - | - | - | - | 166MHz | 5.4ns | DRAM | Parallel | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| IS42S16160J-6BLI-TR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS62WV1288BLL-55QLI-TRAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
SRAM Chip Async Single 3.3V 1M-Bit 128K x 8 55ns 32-Pin SOP T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | Surface Mount | Surface Mount | 32-SOIC (0.445, 11.30mm Width) | - | 32 | Volatile | Industrial grade | -40°C~85°C TA | Tape & Reel (TR) | e3 | yes | Active | 2 (1 Year) | 32 | EAR99 | MATTE TIN | - | - | 2.5V~3.6V | DUAL | 260 | 1 | 3V | - | 40 | 32 | - | - | 3.3V | 3.6V | - | 2.5V | 1Mb 128K x 8 | 1 | 8mA | - | - | - | - | SRAM | Parallel | - | - | - | 8 | 55ns | 17b | 1 Mb | - | - | 55 ns | - | - | Asynchronous | 8b | - | - | - | - | - | - | - | 3mm | 20.445mm | - | No | ROHS3 Compliant | ||
| IS62WV1288BLL-55QLI-TR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS62C25616BL-45TLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
SRAM Chip Async Single 5V 4M-bit 256K x 16 45ns 44-Pin TSOP-II
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | - | Surface Mount | 44-TSOP (0.400, 10.16mm Width) | YES | 44 | Volatile | Industrial grade | -40°C~85°C TA | Tray | e3 | yes | Active | 3 (168 Hours) | 44 | EAR99 | Matte Tin (Sn) - annealed | - | - | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 0.8mm | 40 | 44 | - | - | 5V | - | 5V | - | 4Mb 256K x 16 | 1 | 20mA | - | 20mA | - | - | SRAM | Parallel | - | 32KX8 | 3-STATE | 8 | 45ns | 18b | 4 Mb | - | - | 45 ns | - | COMMON | Asynchronous | 16b | - | 2V | - | - | - | - | - | - | - | - | No | ROHS3 Compliant | ||
| IS62C25616BL-45TLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS43LR32640A-5BLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
DRAM Chip Mobile DDR SDRAM 2G-Bit 64Mx32 1.8V 90-Pin WBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 14 Weeks | Copper, Silver, Tin | Surface Mount | Surface Mount | 90-LFBGA | - | 90 | Volatile | Industrial grade | -40°C~85°C TA | Tray | - | - | Active | 3 (168 Hours) | 90 | EAR99 | - | AUTO/SELF REFRESH | 8542.32.00.36 | 1.7V~1.95V | BOTTOM | - | 1 | 1.8V | 0.8mm | - | 90 | - | Not Qualified | 1.8V | 1.95V | - | 1.7V | 2Gb 64M x 32 | 1 | - | SYNCHRONOUS | - | 200MHz | 5ns | DRAM | Parallel | 32b | 64MX32 | 3-STATE | 32 | 15ns | 14b | 2 Gb | 0.00002A | - | - | - | COMMON | - | - | - | - | - | 8192 | 248 | 248 | - | 1.4mm | 13mm | - | - | ROHS3 Compliant | ||
| IS43LR32640A-5BLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS42S16400J-5TL-TRAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
DRAM Chip SDRAM 64Mbit 4Mx16 3.3V 54-Pin TSOP-II T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | - | - | Surface Mount | 54-TSOP (0.400, 10.16mm Width) | YES | 54 | Volatile | - | 0°C~70°C TA | Tape & Reel (TR) | - | - | Active | 3 (168 Hours) | 54 | - | - | - | - | 3V~3.6V | DUAL | - | - | 3.3V | 0.8mm | - | - | - | Not Qualified | - | - | 3.3V | - | 64Mb 4M x 16 | - | - | - | 110mA | 200MHz | 4.8ns | DRAM | Parallel | 16b | 4MX16 | 3-STATE | 16 | - | - | - | 0.002A | 67108864 bit | - | - | COMMON | - | - | - | - | - | 4096 | 1248FP | 1248 | - | - | - | - | - | ROHS3 Compliant | ||
| IS42S16400J-5TL-TR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS62WV10248EBLL-45BLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
IC SRAM 8M PARALLEL 48VFBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | - | Surface Mount | 48-VFBGA | YES | 48 | Volatile | Industrial grade | -40°C~85°C TA | Tray | - | - | Active | 3 (168 Hours) | 48 | - | - | - | - | 2.2V~3.6V | BOTTOM | NOT SPECIFIED | 1 | 3.3V | 0.75mm | NOT SPECIFIED | - | - | - | - | 3.6V | - | 2.2V | 8Mb 1M x 8 | - | - | - | - | - | - | SRAM | Parallel | - | 1MX8 | - | 8 | 45ns | - | - | - | 8388608 bit | 45 ns | - | - | - | - | - | - | - | - | - | - | - | 1mm | 8mm | 6mm | - | ROHS3 Compliant | ||
| IS62WV10248EBLL-45BLI |
Индекс :
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