| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Contact Plating | Mount | Mounting Type | Package / Case | Surface Mount | Number of Pins | Memory Types | Usage Level | Operating Temperature | Packaging | Series | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Voltage - Supply | Terminal Position | Peak Reflow Temperature (Cel) | Number of Functions | Supply Voltage | Terminal Pitch | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Supply Voltage-Min (Vsup) | Memory Size | Number of Ports | Nominal Supply Current | Operating Mode | Max Supply Current | Clock Frequency | Access Time | Memory Format | Memory Interface | Data Bus Width | Organization | Output Characteristics | Memory Width | Write Cycle Time - Word, Page | Address Bus Width | Density | Standby Current-Max | Memory Density | Max Frequency | Screening Level | Access Time (Max) | Parallel/Serial | I/O Type | Sync/Async | Word Size | Programming Voltage | Standby Voltage-Min | Alternate Memory Width | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Reverse Pinout | Self Refresh | Height | Height Seated (Max) | Length | Width | Radiation Hardening | RoHS Status | Lead Free |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Mfr. ТипIS63LV1024L-12JL-TRAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
IC SRAM 1M PARALLEL 32SOJ
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | Surface Mount | Surface Mount | 32-BSOJ (0.300, 7.62mm Width) | - | 32 | Volatile | - | 0°C~70°C TA | Tape & Reel (TR) | - | - | - | Active | 2 (1 Year) | - | - | - | - | - | 3V~3.6V | - | - | - | - | - | - | - | - | - | 3.3V | - | - | - | 1Mb 128K x 8 | 1 | 130mA | - | - | - | - | SRAM | Parallel | - | - | - | - | 12ns | 17b | 1 Mb | - | - | - | - | - | - | - | Asynchronous | 8b | - | - | - | - | - | - | - | - | - | - | - | - | No | ROHS3 Compliant | - | ||
| IS63LV1024L-12JL-TR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr. ТипIS42S16400J-5TLAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
DRAM Chip SDRAM 64M-Bit 4Mx16 3.3V 54-Pin TSOP-II
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | - | Surface Mount | Surface Mount | 54-TSOP (0.400, 10.16mm Width) | - | 54 | Volatile | Commercial grade | 0°C~70°C TA | Tray | - | - | - | Active | 3 (168 Hours) | 54 | EAR99 | - | AUTO/SELF REFRESH | - | 3V~3.6V | DUAL | - | 1 | 3.3V | 0.8mm | - | 54 | - | - | 3.3V | 3.6V | - | 3V | 64Mb 4M x 16 | 1 | 110mA | - | 110mA | 200MHz | 4.8ns | DRAM | Parallel | 16b | 4MX16 | 3-STATE | 16 | - | 14b | 64 Mb | - | - | - | - | - | - | COMMON | - | - | - | - | - | 4096 | 1248FP | 1248 | NO | YES | - | 1.2mm | 22.22mm | - | No | ROHS3 Compliant | - | ||
| IS42S16400J-5TL | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr. ТипIS43DR16128C-3DBLAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
IC DRAM 2G PARALLEL 84TWBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | - | Surface Mount | 84-TFBGA | YES | - | Volatile | Commercial grade | 0°C~85°C TC | Tray | - | - | - | Active | 3 (168 Hours) | 84 | EAR99 | - | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | - | 1.7V~1.9V | BOTTOM | - | 1 | 1.8V | 0.8mm | - | - | R-PBGA-B84 | Not Qualified | - | 1.9V | 1.8V | 1.7V | 2Gb 128M x 16 | 1 | - | SYNCHRONOUS | - | 333MHz | 450ps | DRAM | Parallel | - | 128MX16 | 3-STATE | 16 | 15ns | - | - | 0.03A | 2147483648 bit | - | - | - | - | COMMON | - | - | - | - | - | 8192 | 48 | 48 | - | - | - | 1.2mm | 12.5mm | 8mm | - | ROHS3 Compliant | - | ||
| IS43DR16128C-3DBL | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr. ТипIS46R16160D-6TLA1Anlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
DRAM 256M, 2.5V, 166Mhz 16Mx16 DDR SDRAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | - | - | Surface Mount | 66-TSSOP (0.400, 10.16mm Width) | YES | 66 | Volatile | - | -40°C~85°C TA | Tray | - | - | - | Active | 3 (168 Hours) | 66 | EAR99 | - | AUTO/SELF REFRESH | 8542.32.00.24 | 2.3V~2.7V | DUAL | - | 1 | 2.5V | 0.65mm | - | 66 | - | Not Qualified | - | 2.7V | 2.5V | 2.3V | 256Mb 16M x 16 | 1 | - | SYNCHRONOUS | - | 166MHz | 700ps | DRAM | Parallel | 16b | 16MX16 | 3-STATE | 16 | 15ns | - | - | 0.004A | 268435456 bit | - | - | - | - | COMMON | - | - | - | - | - | 8192 | 248 | 248 | - | - | - | 1.2mm | 22.22mm | - | - | ROHS3 Compliant | - | ||
| IS46R16160D-6TLA1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr. ТипIS42S16160D-7BLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
DRAM Chip SDRAM 256Mbit 16Mx16 3.3V 54-Pin TFBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | Surface Mount | Surface Mount | 54-TFBGA | - | 54 | Volatile | - | -40°C~85°C TA | Tray | - | e1 | yes | Obsolete | 3 (168 Hours) | 54 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | - | 3V~3.6V | BOTTOM | 260 | 1 | 3.3V | 0.8mm | 40 | 54 | - | - | 3.3V | 3.6V | - | 3V | 256Mb 16M x 16 | 1 | 130mA | - | - | 143MHz | 5.4ns | DRAM | Parallel | 16b | 16MX16 | 3-STATE | - | - | 15b | 256 Mb | 0.003A | - | - | - | - | - | COMMON | - | - | - | - | - | 8192 | - | - | - | - | 800μm | - | 13.1mm | 8.1mm | No | RoHS Compliant | - | ||
| IS42S16160D-7BLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIS61WV2568EDBLL-10KLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
2Mb, High-Speed, Async With Ecc, 256K X 8, 10Ns, 2.4V-3.6V, 36 Pin Soj (400 Mil), Leadfree
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | - | Surface Mount | 36-BSOJ (0.400, 10.16mm Width) | YES | 36 | Volatile | - | -40°C~85°C TA | Tube | - | e1 | - | Active | 3 (168 Hours) | 36 | - | TIN SILVER COPPER | PIPELINED ARCHITECTURE | - | 2.4V~3.6V | DUAL | 260 | 1 | 3.3V | - | 10 | 36 | - | - | - | 3.6V | 2.5/3.3V | 2.4V | 2Mb 256K x 8 | 1 | 35mA | - | - | - | - | SRAM | Parallel | - | 256KX8 | 3-STATE | 8 | 10ns | 18b | 2 Mb | 0.006A | - | - | - | - | - | COMMON | Asynchronous | 8b | - | 2V | - | - | - | - | - | - | - | 3.76mm | 23.49mm | - | No | ROHS3 Compliant | - | ||
| IS61WV2568EDBLL-10KLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr. ТипIS63WV1288DBLL-10JLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
SRAM Chip Async Single 2.5V/3.3V 1M-bit 128K x 8 10ns 32-Pin SOJ
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | - | Surface Mount | 32-BSOJ (0.300, 7.62mm Width) | YES | 32 | Volatile | - | -40°C~85°C TA | Tube | - | e3 | yes | Active | 3 (168 Hours) | 32 | - | MATTE TIN | - | - | 2.4V~3.6V | DUAL | 260 | 1 | - | - | 40 | 32 | - | Not Qualified | - | 3.6V | 2.5/3.3V | 2.4V | 1Mb 128K x 8 | 1 | 55mA | - | - | - | - | SRAM | Parallel | - | - | 3-STATE | 8 | 10ns | 17b | 1 Mb | 0.000055A | - | - | - | - | - | COMMON | Asynchronous | 8b | - | 2V | - | - | - | - | - | - | - | 3.405mm | 20.955mm | - | - | ROHS3 Compliant | - | ||
| IS63WV1288DBLL-10JLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr. ТипIS46DR16640B-25DBLA2Anlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
DRAM 1G (64Mx16) 400MHz 1.8v DDR2 SDRAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | Surface Mount | Surface Mount | 84-TFBGA | - | 84 | Volatile | Automotive grade | -40°C~105°C TA | Tray | - | - | - | Active | 3 (168 Hours) | 84 | EAR99 | - | AUTO/SELF REFRESH | 8542.32.00.32 | 1.7V~1.9V | BOTTOM | - | 1 | 1.8V | 0.8mm | - | - | - | Not Qualified | 1.8V | 1.9V | - | 1.7V | 1Gb 64M x 16 | 1 | 240mA | SYNCHRONOUS | - | 400MHz | 400ps | DRAM | Parallel | 16b | 64MX16 | 3-STATE | 16 | 15ns | 16b | 1 Gb | 0.015A | - | - | AEC-Q100 | - | - | COMMON | - | - | - | - | - | 8192 | 48 | 48 | - | - | - | 1.2mm | 12.5mm | - | - | ROHS3 Compliant | - | ||
| IS46DR16640B-25DBLA2 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr. ТипIS66WV51216DBLL-55TLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
PSRAM Async Single 8M-bit 512K x 16 55ns 44-Pin TSOP-II
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | Surface Mount | 44-TSOP (0.400, 10.16mm Width) | YES | 44 | Volatile | - | -40°C~85°C TA | Tray | - | - | - | Discontinued | 3 (168 Hours) | 44 | - | - | - | - | 2.5V~3.6V | DUAL | - | 1 | 3V | 0.8mm | - | 44 | - | - | 3.3V | 3.6V | - | 2.5V | 8Mb 512K x 16 | 1 | - | - | 10mA | - | - | PSRAM | Parallel | - | - | 3-STATE | 16 | 55ns | 19b | 8 Mb | - | - | 18MHz | - | 55 ns | - | COMMON | - | - | - | - | - | - | - | - | - | - | - | - | - | - | No | ROHS3 Compliant | Lead Free | ||
| IS66WV51216DBLL-55TLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIS25LP016D-JNLA3Anlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
Automotive (Tc: -40 125C), 16Mb QSPI, 8-pin SOP 150Mil, RoHS
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 2 Weeks | - | - | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | YES | - | Non-Volatile | Automotive grade | -40°C~125°C TA | Tray | Automotive, AEC-Q100 | e3 | - | Active | 3 (168 Hours) | 8 | - | Tin (Sn) | - | 8542.32.00.51 | 2.3V~3.6V | DUAL | 260 | 1 | 3V | 1.27mm | 10 | - | R-PDSO-G8 | - | - | 3.6V | - | 2.3V | 16Mb 2M x 8 | - | - | SYNCHRONOUS | - | 133MHz | - | FLASH | SPI - Quad I/O, QPI, DTR | - | 2MX8 | - | 8 | 800μs | - | - | - | 16777216 bit | - | - | - | SERIAL | - | - | - | 3V | - | 1 | - | - | - | - | - | - | 1.75mm | 4.9mm | 3.9mm | - | ROHS3 Compliant | - | ||
| IS25LP016D-JNLA3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr. ТипIS42S16400J-7BLAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
DRAM Chip SDRAM 64Mbit 4Mx16 3.3V 54-Pin TFBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | - | Surface Mount | Surface Mount | 54-TFBGA | - | 54 | Volatile | Commercial grade | 0°C~70°C TA | Tray | - | - | - | Active | 3 (168 Hours) | 54 | EAR99 | - | AUTO/SELF REFRESH | - | 3V~3.6V | BOTTOM | - | 1 | 3.3V | 0.8mm | - | 54 | - | - | 3.3V | 3.6V | - | 3V | 64Mb 4M x 16 | 1 | 90mA | - | - | 143MHz | 5.4ns | DRAM | Parallel | 16b | 4MX16 | 3-STATE | 16 | - | 14b | 64 Mb | - | - | - | - | - | - | COMMON | - | - | - | - | - | 4096 | 1248FP | 1248 | NO | YES | - | 1.2mm | 8mm | - | No | ROHS3 Compliant | Lead Free | ||
| IS42S16400J-7BL | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIS25LP016D-JULE-TRAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
IC FLASH 16M SPI 133MHZ 8USON
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | - | Surface Mount | 8-UFDFN Exposed Pad | YES | - | Non-Volatile | - | -40°C~105°C TA | Tape & Reel (TR) | - | - | - | Active | 3 (168 Hours) | 8 | - | - | - | - | 2.3V~3.6V | DUAL | NOT SPECIFIED | 1 | 3V | 0.5mm | NOT SPECIFIED | - | R-PDSO-N8 | - | - | 3.6V | - | 2.3V | 16Mb 2M x 8 | - | - | SYNCHRONOUS | - | 133MHz | 7ns | FLASH | SPI, QPI | - | 2MX8 | - | 8 | 800μs | - | - | - | 16777216 bit | - | - | - | SERIAL | - | - | - | 3V | - | 1 | - | - | - | - | - | - | 0.6mm | 3mm | 2mm | - | ROHS3 Compliant | - | ||
| IS25LP016D-JULE-TR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr. ТипIS42S32200L-6BLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
DRAM Chip SDRAM 64M-Bit 2Mx32 3.3V 90-Pin TFBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | Surface Mount | Surface Mount | 90-TFBGA | - | 90 | Volatile | Industrial grade | -40°C~85°C TA | Tray | - | - | - | Active | 3 (168 Hours) | 90 | EAR99 | - | AUTO/SELF REFRESH | 8542.32.00.02 | 3V~3.6V | BOTTOM | - | 1 | 3.3V | 0.8mm | - | 90 | - | Not Qualified | 3.3V | 3.6V | - | 3V | 64Mb 2M x 32 | 1 | 100mA | SYNCHRONOUS | - | 166MHz | 5.4ns | DRAM | Parallel | 32b | 2MX32 | 3-STATE | 32 | - | 13b | 64 Mb | 0.002A | - | - | - | - | - | COMMON | - | - | - | - | - | 4096 | 1248FP | 1248 | - | - | - | 1.2mm | 13mm | - | - | ROHS3 Compliant | - | ||
| IS42S32200L-6BLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr. ТипIS45S16800F-7CTLA2Anlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
DRAM Chip SDRAM 128M-Bit 8Mx16 3.3V 54-Pin TSOP-II
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | Surface Mount | Surface Mount | 54-TSOP (0.400, 10.16mm Width) | - | 54 | Volatile | Automotive grade | -40°C~105°C TA | Tray | - | - | - | Active | 3 (168 Hours) | 54 | - | - | AUTO/SELF REFRESH | - | 3V~3.6V | DUAL | - | 1 | 3.3V | 0.8mm | - | - | - | - | 3.3V | 3.6V | - | 3V | 128Mb 8M x 16 | 1 | 100mA | - | - | 143MHz | 5.4ns | DRAM | Parallel | 16b | 8MX16 | 3-STATE | 16 | - | 14b | 128 Mb | 0.002A | - | - | AEC-Q100 | - | - | COMMON | - | - | - | - | - | 4096 | 1248FP | 1248 | - | - | - | 1.2mm | 22.22mm | - | No | ROHS3 Compliant | - | ||
| IS45S16800F-7CTLA2 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr. ТипIS43LR16800G-6BLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
IC DRAM 128M PARALLEL 60TFBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 14 Weeks | - | Surface Mount | Surface Mount | 60-TFBGA | - | 60 | Volatile | Industrial grade | -40°C~85°C TA | Tray | - | - | - | Active | 3 (168 Hours) | 60 | EAR99 | - | AUTO/SELF REFRESH | - | 1.7V~1.95V | BOTTOM | NOT SPECIFIED | 1 | 1.8V | 0.8mm | NOT SPECIFIED | - | - | - | 1.8V | 1.95V | - | 1.7V | 128Mb 8M x 16 | 1 | - | SYNCHRONOUS | - | 166MHz | 5.5ns | DRAM | Parallel | 16b | 8MX16 | - | 16 | 15ns | 12b | 1 Gb | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 1.1mm | 10mm | - | - | ROHS3 Compliant | Lead Free | ||
| IS43LR16800G-6BLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr. ТипIS61LPS12836EC-200TQLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
SRAM 4Mb, 3.3v, 200Mhz 128K x 36 Sync SRAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | - | Surface Mount | 100-LQFP | YES | 100 | Volatile | Industrial grade | -40°C~85°C TA | Tray | - | e3 | - | Active | 3 (168 Hours) | 100 | 3A991.B.2.A | Matte Tin (Sn) | - | 8542.32.00.41 | 3.135V~3.465V | QUAD | 260 | 1 | 3.3V | 0.65mm | 10 | 100 | - | Not Qualified | - | 3.465V | 2.52.5/3.3V | 3.135V | 4.5Mb 128K x 36 | - | - | - | - | 200MHz | 3.1ns | SRAM | Parallel | - | 128KX36 | 3-STATE | 36 | - | - | - | 0.085A | 4718592 bit | - | - | - | - | COMMON | - | - | - | 3.14V | - | - | - | - | - | - | - | 1.6mm | 20mm | 14mm | - | ROHS3 Compliant | - | ||
| IS61LPS12836EC-200TQLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr. ТипIS42S16100E-7TLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
IC DRAM 16M PARALLEL 50TSOP II
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Tin | Surface Mount | Surface Mount | 50-TSOP (0.400, 10.16mm Width) | - | 50 | Volatile | - | -40°C~85°C TA | Tray | - | e3 | yes | Obsolete | 3 (168 Hours) | 50 | EAR99 | - | AUTO/SELF REFRESH | 8542.32.00.02 | 3V~3.6V | DUAL | 260 | 1 | 3.3V | 0.8mm | 40 | 50 | - | - | 3.3V | 3.6V | - | 3V | 16Mb 1M x 16 | 1 | 150mA | - | 150mA | 143MHz | 5.5ns | DRAM | Parallel | 16b | 1MX16 | 3-STATE | - | - | 12b | 16 Mb | 0.004A | - | - | - | - | - | COMMON | - | - | - | - | - | 2048 | - | - | - | - | 1.05mm | - | 21.08mm | 10.29mm | No | RoHS Compliant | - | ||
| IS42S16100E-7TLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr. ТипIS42S16320D-6TL-TRAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
DRAM 512M (32Mx16) 166MHz SDRAM, 3.3v
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | - | - | Surface Mount | 54-TSOP (0.400, 10.16mm Width) | YES | 54 | Volatile | - | 0°C~70°C TA | Tape & Reel (TR) | - | e3 | yes | Active | 3 (168 Hours) | 54 | - | MATTE TIN | AUTO/SELF REFRESH | - | 3V~3.6V | DUAL | 225 | 1 | 3.3V | 0.8mm | NOT SPECIFIED | - | - | Not Qualified | - | 3.6V | 3.3V | 3V | 512Mb 32M x 16 | 1 | - | SYNCHRONOUS | - | 166MHz | 5.4ns | DRAM | Parallel | 16b | 32MX16 | 3-STATE | 16 | - | - | - | 0.004A | 536870912 bit | - | - | - | - | COMMON | - | - | - | - | - | 8192 | 1248FP | 1248 | - | - | - | 1.2mm | 22.22mm | - | - | ROHS3 Compliant | - | ||
| IS42S16320D-6TL-TR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr. ТипIS46TR16128B-15HBLA1Anlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
IC DRAM 2G PARALLEL 96TWBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | - | - | Surface Mount | 96-TFBGA | YES | 96 | Volatile | - | -40°C~95°C TC | Tray | - | - | - | Active | 3 (168 Hours) | 96 | - | - | AUTO/SELF REFRESH | - | 1.425V~1.575V | BOTTOM | - | 1 | 1.5V | 0.8mm | - | - | - | - | 1.5V | 1.575V | - | 1.425V | 2Gb 128M x 16 | 1 | - | ASYNCHRONOUS | - | 667MHz | 20ns | DRAM | Parallel | - | 128MX16 | - | 16 | 15ns | 14b | 2 Gb | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 1.2mm | 13mm | - | - | ROHS3 Compliant | - | ||
| IS46TR16128B-15HBLA1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr. ТипIS62WV12816BLL-55BLI-TRAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
IC SRAM 2M PARALLEL 48MINIBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | Surface Mount | Surface Mount | 48-TFBGA | - | 48 | Volatile | Industrial grade | -40°C~85°C TA | Tape & Reel (TR) | - | - | - | Active | 2 (1 Year) | - | - | - | - | - | 2.5V~3.6V | - | - | - | - | - | - | - | - | - | 3.3V | - | - | - | 2Mb 128K x 16 | 1 | 3mA | - | - | - | - | SRAM | Parallel | - | - | - | - | 55ns | 17b | 2 Mb | - | - | - | - | - | - | - | Asynchronous | 16b | - | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| IS62WV12816BLL-55BLI-TR |
Индекс :
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