| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Contact Plating | Mount | Mounting Type | Package / Case | Surface Mount | Number of Pins | Memory Types | Usage Level | Operating Temperature | Packaging | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Voltage - Supply | Terminal Position | Peak Reflow Temperature (Cel) | Number of Functions | Supply Voltage | Terminal Pitch | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Supply Voltage-Min (Vsup) | Memory Size | Number of Ports | Nominal Supply Current | Operating Mode | Max Supply Current | Clock Frequency | Access Time | Memory Format | Memory Interface | Data Bus Width | Organization | Output Characteristics | Memory Width | Write Cycle Time - Word, Page | Address Bus Width | Density | Standby Current-Max | Memory Density | Access Time (Max) | I/O Type | Sync/Async | Word Size | Standby Voltage-Min | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Self Refresh | Height Seated (Max) | Length | Width | Radiation Hardening | RoHS Status | Lead Free |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипIS61WV3216DBLL-10TLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
SRAM Chip Async Single 2.5V/3.3V 512K-bit 32K x 16 10ns 44-Pin TSOP-II
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | - | Surface Mount | 44-TSOP (0.400, 10.16mm Width) | YES | 44 | Volatile | - | -40°C~85°C TA | Tray | - | - | Active | 3 (168 Hours) | 44 | - | - | - | - | 2.4V~3.6V | DUAL | - | 1 | 3V | 0.8mm | - | - | - | - | - | 3.6V | - | 2.4V | 512Kb 32K x 16 | 1 | 55mA | - | - | - | - | SRAM | Parallel | - | - | - | 16 | 10ns | 15b | 512 kb | - | - | - | - | Asynchronous | 16b | - | - | - | - | - | - | - | - | No | ROHS3 Compliant | - | ||
| IS61WV3216DBLL-10TLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS45S16160G-6TLA1Anlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
DRAM 256M, 3.3V, 166Mhz 16Mx16 SDR SDRAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | - | Surface Mount | 54-TSOP (0.400, 10.16mm Width) | YES | 54 | Volatile | - | -40°C~85°C TA | Tray | - | - | Active | 3 (168 Hours) | 54 | EAR99 | - | AUTO/SELF REFRESH | - | 3V~3.6V | DUAL | NOT SPECIFIED | 1 | 3.3V | 0.8mm | NOT SPECIFIED | 54 | - | Not Qualified | - | 3.6V | 3.3V | 3V | 256Mb 16M x 16 | 1 | - | SYNCHRONOUS | - | 166MHz | 5.4ns | DRAM | Parallel | 16b | 16MX16 | 3-STATE | 16 | - | - | - | 0.004A | - | - | COMMON | - | - | - | 8192 | 1248FP | 1248 | - | 1.2mm | 22.22mm | - | - | ROHS3 Compliant | - | ||
| IS45S16160G-6TLA1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS43R86400D-6TLAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
DRAM 512M (64Mx8) 166MHz 2.5v DDR SDRAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | Surface Mount | Surface Mount | 66-TSSOP (0.400, 10.16mm Width) | - | 66 | Volatile | - | 0°C~70°C TA | Tray | e3 | yes | Active | 3 (168 Hours) | 66 | EAR99 | MATTE TIN | AUTO/SELF REFRESH | 8542.32.00.28 | 2.3V~2.7V | DUAL | 260 | 1 | 2.5V | 0.65mm | 40 | 66 | - | Not Qualified | 2.5V | 2.7V | - | 2.3V | 512Mb 64M x 8 | 1 | 370mA | SYNCHRONOUS | 370mA | 166MHz | 700ps | DRAM | Parallel | 8b | 64MX8 | 3-STATE | 8 | 15ns | 15b | 512 Mb | 0.025A | - | - | COMMON | - | - | - | 8192 | 248 | 248 | - | 1.2mm | 22.22mm | - | - | ROHS3 Compliant | - | ||
| IS43R86400D-6TL | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS61WV51216EEBLL-10BLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
IC SRAM 8M PARALLEL 48TFBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | - | Surface Mount | 48-TFBGA | YES | - | Volatile | - | -40°C~85°C TA | Tray | e1 | - | Active | 3 (168 Hours) | 48 | - | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | - | 8542.32.00.41 | 2.4V~3.6V | BOTTOM | NOT SPECIFIED | 1 | 3V | 0.75mm | NOT SPECIFIED | - | R-PBGA-B48 | - | - | 3.6V | - | 2.4V | 8Mb 512K x 16 | - | - | - | - | - | - | SRAM | Parallel | - | 512KX16 | - | 16 | 10ns | - | - | - | 8388608 bit | 10 ns | - | - | - | - | - | - | - | - | 1.2mm | 8mm | 6mm | - | ROHS3 Compliant | - | ||
| IS61WV51216EEBLL-10BLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS43TR16640A-125JBLAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
DRAM 1G, 1.5V, (64M x 16) 1600Mhz DDR3 SDRAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | Surface Mount | 96-TFBGA | YES | 96 | Volatile | - | 0°C~95°C TC | Tray | - | - | Discontinued | 3 (168 Hours) | 96 | EAR99 | - | AUTO SELF REFRESH MODE, ALSO OPERATES AT 1.35 V NOMINAL SUPPLY | 8542.32.00.32 | 1.425V~1.575V | BOTTOM | - | 1 | 1.5V | 0.8mm | - | 96 | - | Not Qualified | - | 1.575V | 1.5V | 1.425V | 1Gb 64M x 16 | 1 | - | SYNCHRONOUS | - | 800MHz | 20ns | DRAM | Parallel | 16b | 64MX16 | 3-STATE | 16 | 15ns | - | 1 Gb | 0.015A | - | - | COMMON | - | - | - | 8192 | 48 | 48 | - | 1.2mm | 13mm | - | - | ROHS3 Compliant | - | ||
| IS43TR16640A-125JBL | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS41C16105C-50TLI-TRAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
16M, FAST PAGE MODE DRAM, ASYN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | Surface Mount | 54-TSOP (0.400, 10.16mm Width) | YES | 54 | Volatile | - | -40°C~85°C TA | Tape & Reel (TR) | - | - | Active | 3 (168 Hours) | 44 | - | - | - | - | 4.5V~5.5V | DUAL | - | - | 5V | 0.8mm | - | - | R-PDSO-G44 | Not Qualified | - | - | 5V | - | 16Mb 1M x 16 | - | - | - | 90mA | - | 25ns | DRAM | Parallel | 16b | 1MX16 | 3-STATE | 16 | - | - | - | 0.001A | - | - | COMMON | - | - | - | 1024 | - | - | NO | - | - | - | - | ROHS3 Compliant | - | ||
| IS41C16105C-50TLI-TR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS66WV51216BLL-55TLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
SRAM 8M (512Kx16) 55ns Industrial Temp
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | Surface Mount | Surface Mount | 44-TSOP (0.400, 10.16mm Width) | - | 44 | Volatile | - | -40°C~85°C TA | Tray | e3 | yes | Obsolete | 3 (168 Hours) | 32 | 3A991.B.2.A | Matte Tin (Sn) - annealed | - | 8542.32.00.41 | 2.5V~3.6V | DUAL | 260 | 1 | 3V | 1.27mm | 40 | 32 | R-PDSO-G32 | Not Qualified | - | 3.6V | 3/3.3V | 2.5V | 8Mb 512K x 16 | - | - | ASYNCHRONOUS | - | - | - | PSRAM | Parallel | - | 512KX16 | 3-STATE | 16 | 55ns | - | - | 0.00013A | 8388608 bit | 55 ns | COMMON | - | - | - | - | - | - | - | 1.2mm | 20.95mm | 10.16mm | - | RoHS Compliant | - | ||
| IS66WV51216BLL-55TLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS43LR16640A-6BLAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
IC DRAM 1G PARALLEL 60TWBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 14 Weeks | Copper, Silver, Tin | Surface Mount | Surface Mount | 60-TFBGA | - | 60 | Volatile | Commercial grade | 0°C~70°C TA | Tray | - | - | Active | 3 (168 Hours) | 60 | EAR99 | - | AUTO/SELF REFRESH | 8542.32.00.32 | 1.7V~1.95V | BOTTOM | - | 1 | 1.8V | 0.8mm | - | 60 | - | Not Qualified | 1.8V | 1.95V | - | 1.7V | 1Gb 64M x 16 | 1 | - | SYNCHRONOUS | - | 166MHz | 5ns | DRAM | Parallel | 16b | 64MX16 | 3-STATE | 16 | 15ns | 14b | 1 Gb | 0.005A | - | - | COMMON | - | - | - | 8192 | 248 | 248 | - | 1.1mm | 10mm | - | - | ROHS3 Compliant | - | ||
| IS43LR16640A-6BL | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS43TR16256A-15HBLI-TRAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
DRAM 4G, 1.5V, 1333MT/s DDR3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Copper, Silver, Tin | Surface Mount | Surface Mount | 96-TFBGA | - | 96 | Volatile | - | -40°C~95°C TC | Tape & Reel (TR) | - | - | Active | 3 (168 Hours) | - | - | - | - | - | 1.425V~1.575V | - | - | - | - | - | - | - | - | - | 1.5V | - | - | - | 4Gb 256M x 16 | - | - | - | 267mA | 667MHz | 20ns | DRAM | Parallel | 16b | - | - | - | 15ns | 15b | 4 Gb | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| IS43TR16256A-15HBLI-TR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS45S16800F-7CTLA2-TRAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
DRAM Automotive,128M,3.3V SDRAM,8Mx16,143Mhz
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | - | Surface Mount | 54-TSOP (0.400, 10.16mm Width) | - | 54 | Volatile | Automotive grade | -40°C~105°C TA | Tape & Reel (TR) | - | - | Active | 3 (168 Hours) | - | - | - | - | - | 3V~3.6V | - | - | - | - | - | - | - | - | - | - | - | - | - | 128Mb 8M x 16 | - | - | - | - | 143MHz | 5.4ns | DRAM | Parallel | 16b | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| IS45S16800F-7CTLA2-TR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS43LR16640A-5BLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
IC DRAM 1G PARALLEL 60TWBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 14 Weeks | - | - | Surface Mount | 60-TFBGA | YES | - | Volatile | Industrial grade | -40°C~85°C TA | Tray | - | - | Active | 3 (168 Hours) | 60 | EAR99 | - | AUTO/SELF REFRESH | 8542.32.00.32 | 1.7V~1.95V | BOTTOM | - | 1 | 1.8V | 0.8mm | - | 60 | R-PBGA-B60 | Not Qualified | - | 1.95V | 1.8V | 1.7V | 1Gb 64M x 16 | 1 | - | SYNCHRONOUS | - | 200MHz | 5ns | DRAM | Parallel | - | 64MX16 | 3-STATE | 16 | 15ns | - | - | 0.005A | 1073741824 bit | - | COMMON | - | - | - | 8192 | 248 | 248 | - | 1.1mm | 10mm | 8mm | - | ROHS3 Compliant | - | ||
| IS43LR16640A-5BLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS61VPS25636A-200TQLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
IC SRAM 9MBIT 200MHZ 100TQFP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | - | Surface Mount | 100-LQFP | YES | 100 | Volatile | Industrial grade | -40°C~85°C TA | Tray | e3 | yes | Active | 2 (1 Year) | 100 | 3A991.B.2.A | Matte Tin (Sn) - annealed | PIPELINED ARCHITECTURE | - | 2.375V~2.625V | QUAD | 260 | 1 | 2.5V | 0.65mm | 40 | 100 | - | - | 2.5V | 2.625V | - | 2.375V | 9Mb 256K x 36 | 4 | 275mA | - | - | 200MHz | 3.1ns | SRAM | Parallel | - | 256KX36 | 3-STATE | 36 | - | 18b | 9 Mb | 0.105A | - | - | COMMON | Synchronous | 36b | 2.38V | - | - | - | - | 1.6mm | 20mm | - | No | ROHS3 Compliant | - | ||
| IS61VPS25636A-200TQLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS42RM32800K-6BLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
DRAM 256M, 2.5V, 166Mhz 8Mx32 Mobile SDR
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | - | Surface Mount | 90-TFBGA | YES | 90 | Volatile | - | -40°C~85°C TA | Tray | - | - | Active | 3 (168 Hours) | 90 | - | - | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | - | 2.3V~3V | BOTTOM | - | 1 | 2.5V | 0.8mm | - | - | - | Not Qualified | - | 3V | 2.5V | 2.3V | 256Mb 8M x 32 | 1 | - | SYNCHRONOUS | - | 166MHz | 5.5ns | DRAM | Parallel | 32b | 8MX32 | 3-STATE | 32 | - | - | - | 0.0003A | 268435456 bit | - | COMMON | - | - | - | 4096 | 48 | 48 | - | 1.2mm | 13mm | - | - | ROHS3 Compliant | - | ||
| IS42RM32800K-6BLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS43R16320D-6TL-TRAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 66TSOP II
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | - | Surface Mount | 66-TSSOP (0.400, 10.16mm Width) | YES | 66 | Volatile | Commercial grade | 0°C~70°C TA | Tape & Reel (TR) | e3 | yes | Active | 3 (168 Hours) | 66 | - | MATTE TIN | AUTO/SELF REFRESH | - | 2.3V~2.7V | DUAL | 225 | 1 | 2.5V | 0.65mm | NOT SPECIFIED | - | - | Not Qualified | - | 2.7V | 2.5V | 2.3V | 512Mb 32M x 16 | 1 | - | SYNCHRONOUS | 370mA | 166MHz | 700ps | DRAM | Parallel | 16b | 32MX16 | 3-STATE | 16 | 15ns | - | - | 0.025A | 536870912 bit | - | COMMON | - | - | - | 8192 | 248 | 248 | - | 1.2mm | 22.22mm | - | - | ROHS3 Compliant | - | ||
| IS43R16320D-6TL-TR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS43DR16160A-3DBLAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
DRAM Chip DDR2 SDRAM 256Mbit 16Mx16 1.8V 84-Pin TW-BGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | Surface Mount | Surface Mount | 84-TFBGA | - | 84 | Volatile | - | 0°C~70°C TA | Tray | e1 | yes | Obsolete | 3 (168 Hours) | 84 | EAR99 | TIN SILVER COPPER | AUTO/SELF REFRESH | 8542.32.00.24 | 1.7V~1.9V | BOTTOM | 260 | 1 | 1.8V | 0.8mm | 40 | 84 | - | - | 1.8V | 1.9V | - | 1.7V | 256Mb 16M x 16 | 1 | 330mA | - | - | 333MHz | 450ps | DRAM | Parallel | 16b | 16MX16 | 3-STATE | 16 | 15ns | 15b | 256 Mb | 0.005A | - | - | COMMON | - | - | - | 8192 | 48 | 48 | - | 1.2mm | 12.5mm | - | No | RoHS Compliant | - | ||
| IS43DR16160A-3DBL | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS66WV51216DBLL-55BLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
PSRAM Async 1 8M-Bit 512K x 16 55ns 48-Pin TFBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | Surface Mount | 48-TFBGA | YES | 48 | Volatile | - | -40°C~85°C TA | Tray | - | - | Discontinued | 3 (168 Hours) | 48 | - | - | - | - | 2.5V~3.6V | BOTTOM | - | 1 | 3V | 0.75mm | - | 48 | - | - | 3.3V | 3.6V | - | 2.5V | 8Mb 512K x 16 | 1 | - | - | 10mA | - | - | PSRAM | Parallel | - | - | 3-STATE | 16 | 55ns | 19b | 8 Mb | - | - | 55 ns | COMMON | - | - | - | - | - | - | - | - | 8mm | - | No | ROHS3 Compliant | - | ||
| IS66WV51216DBLL-55BLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS61NVP51236-200TQLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
IC SRAM 18MBIT 200MHZ 100TQFP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | Surface Mount | 100-LQFP | YES | 100 | Volatile | Industrial grade | -40°C~85°C TA | Tray | e3 | yes | Obsolete | 2 (1 Year) | 100 | 3A991.B.2.A | Matte Tin (Sn) - annealed | PIPELINED ARCHITECTURE | - | 2.375V~2.625V | QUAD | 260 | 1 | 2.5V | 0.65mm | 40 | 100 | - | - | 2.5V | 2.625V | - | 2.375V | 18Mb 512K x 36 | 4 | 475mA | - | - | 200MHz | 3.1ns | SRAM | Parallel | - | 512KX36 | 3-STATE | - | - | 19b | 18 Mb | 0.075A | - | - | COMMON | Synchronous | 36b | 2.38V | - | - | - | - | 1.6mm | 20mm | 14mm | No | RoHS Compliant | Lead Free | ||
| IS61NVP51236-200TQLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS42S16320F-6BLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 54TFBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | - | - | Surface Mount | 54-TFBGA | YES | - | Volatile | Industrial grade | -40°C~85°C TA | Tray | - | - | Active | 3 (168 Hours) | 54 | EAR99 | - | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | 8542.32.00.28 | 3V~3.6V | BOTTOM | - | 1 | 3.3V | 0.8mm | - | - | R-PBGA-B54 | Not Qualified | - | 3.6V | 3.3V | 3V | 512Mb 32M x 16 | 1 | - | SYNCHRONOUS | - | 167MHz | 5.4ns | DRAM | Parallel | - | 32MX16 | 3-STATE | 16 | - | - | - | 0.004A | 536870912 bit | - | COMMON | - | - | - | 8192 | 1248FP | 1248 | - | 1.2mm | 13mm | 8mm | - | ROHS3 Compliant | - | ||
| IS42S16320F-6BLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS66WV51216EBLL-70BLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
IC PSRAM 8M PARALLEL 48TFBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | - | - | Surface Mount | 48-TFBGA | YES | - | Volatile | Industrial grade | -40°C~85°C TA | Tray | - | - | Active | 3 (168 Hours) | 48 | - | - | - | - | 2.5V~3.6V | BOTTOM | NOT SPECIFIED | 1 | 3V | 0.75mm | NOT SPECIFIED | - | R-PBGA-B48 | - | - | 3.6V | - | 2.5V | 8Mb 512K x 16 | - | - | ASYNCHRONOUS | - | - | - | PSRAM | Parallel | - | 512KX16 | - | 16 | 70ns | - | - | - | 8388608 bit | 70 ns | - | - | - | - | - | - | - | - | 1.2mm | 8mm | 6mm | - | ROHS3 Compliant | - | ||
| IS66WV51216EBLL-70BLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS46TR16128CL-125KBLA2Anlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
IC DRAM 2G PARALLEL 96TWBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | - | - | Surface Mount | 96-TFBGA | YES | - | Volatile | - | -40°C~105°C TC | Tray | e1 | - | Active | 3 (168 Hours) | 96 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | - | 1.283V~1.45V | BOTTOM | 260 | 1 | 1.35V | 0.8mm | 10 | - | R-PBGA-B96 | - | - | 1.45V | - | 1.283V | 2Gb 128M x 16 | 1 | - | SYNCHRONOUS | - | 800MHz | 20ns | DRAM | Parallel | - | 128MX16 | - | 16 | 15ns | - | - | - | 2147483648 bit | - | - | - | - | - | - | - | - | - | 1.2mm | 13mm | 9mm | - | ROHS3 Compliant | - | ||
| IS46TR16128CL-125KBLA2 |
Индекс :
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