| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Mount | Mounting Type | Package / Case | Surface Mount | Number of Pins | Supplier Device Package | Memory Types | Usage Level | Operating Temperature | Packaging | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Voltage - Supply | Terminal Position | Peak Reflow Temperature (Cel) | Number of Functions | Supply Voltage | Terminal Pitch | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Supply Voltage-Min (Vsup) | Interface | Max Supply Voltage | Min Supply Voltage | Memory Size | Number of Ports | Nominal Supply Current | Operating Mode | Max Supply Current | Clock Frequency | Access Time | Memory Format | Memory Interface | Data Bus Width | Organization | Output Characteristics | Memory Width | Write Cycle Time - Word, Page | Address Bus Width | Density | Standby Current-Max | Memory Density | Screening Level | Access Time (Max) | Parallel/Serial | I/O Type | Sync/Async | Word Size | Programming Voltage | Standby Voltage-Min | Alternate Memory Width | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Height Seated (Max) | Length | Width | Radiation Hardening | REACH SVHC | RoHS Status |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипIS66WV51216EBLL-70BLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
IC PSRAM 8M PARALLEL 48TFBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | - | Surface Mount | 48-TFBGA | YES | - | - | Volatile | Industrial grade | -40°C~85°C TA | Tray | - | - | Active | 3 (168 Hours) | 48 | - | - | - | - | - | - | 2.5V~3.6V | BOTTOM | NOT SPECIFIED | 1 | 3V | 0.75mm | NOT SPECIFIED | - | R-PBGA-B48 | - | - | 3.6V | - | 2.5V | - | - | - | 8Mb 512K x 16 | - | - | ASYNCHRONOUS | - | - | - | PSRAM | Parallel | - | 512KX16 | - | 16 | 70ns | - | - | - | 8388608 bit | - | 70 ns | - | - | - | - | - | - | - | - | - | - | 1.2mm | 8mm | 6mm | - | - | ROHS3 Compliant | ||
| IS66WV51216EBLL-70BLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS46TR16256AL-125KBLA1Anlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
DRAM 4G, 1.35V, 1600MT/s DDR3 SDRAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | - | Surface Mount | 96-TFBGA | YES | 96 | - | Volatile | Automotive grade | -40°C~95°C TC | Tray | - | - | Active | 3 (168 Hours) | 96 | - | - | - | - | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | - | 1.283V~1.45V | BOTTOM | - | 1 | 1.35V | 0.8mm | - | - | - | Not Qualified | - | 1.45V | 1.35V | 1.283V | - | - | - | 4Gb 256M x 16 | 1 | - | SYNCHRONOUS | 261mA | 800MHz | 20ns | DRAM | Parallel | 16b | 256MX16 | 3-STATE | 16 | 15ns | - | - | 0.016A | - | AEC-Q100 | - | - | COMMON | - | - | - | - | - | 8192 | 48 | 48 | 1.2mm | 13mm | - | - | - | ROHS3 Compliant | ||
| IS46TR16256AL-125KBLA1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS62WV25616EBLL-45BLI-TRAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
IC SRAM 4M PARALLEL 48TFBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | Surface Mount | 48-TFBGA | YES | - | - | Volatile | Industrial grade | -40°C~85°C TA | Tape & Reel (TR) | - | yes | Active | 3 (168 Hours) | 48 | - | - | - | - | - | - | 2.2V~3.6V | BOTTOM | NOT SPECIFIED | 1 | 3V | 0.75mm | NOT SPECIFIED | - | R-PBGA-B48 | - | - | 3.6V | - | 2.2V | - | - | - | 4Mb 256K x 16 | - | - | - | - | - | - | SRAM | Parallel | - | 256KX16 | - | 16 | 45ns | - | - | - | 4194304 bit | - | 45 ns | - | - | - | - | - | - | - | - | - | - | 1.2mm | 8mm | 6mm | - | - | ROHS3 Compliant | ||
| IS62WV25616EBLL-45BLI-TR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS64WV6416BLL-15BA3Anlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
SRAM 1Mb 15ns 64Kx16 Async SRAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | Surface Mount | 48-TFBGA | YES | 48 | - | Volatile | Automotive grade | -40°C~125°C TA | Tray | e0 | no | Last Time Buy | 3 (168 Hours) | 48 | - | Tin/Lead (Sn/Pb) | - | - | - | - | 2.5V~3.6V | BOTTOM | NOT SPECIFIED | 1 | 3V | 0.75mm | NOT SPECIFIED | 48 | - | Not Qualified | 3.3V | 3.6V | - | 2.5V | - | - | - | 1Mb 64K x 16 | 1 | 50mA | - | - | - | - | SRAM | Parallel | - | - | 3-STATE | 16 | 15ns | 16b | 1 Mb | 0.075A | - | - | - | - | COMMON | Asynchronous | 16b | - | - | - | - | - | - | - | 8mm | - | - | - | Non-RoHS Compliant | ||
| IS64WV6416BLL-15BA3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS46LR16320B-6BLA1Anlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
DRAM Chip DDR SDRAM 512M-Bit 32Mx16 1.8V 60-Pin TFBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 14 Weeks | Surface Mount | Surface Mount | 60-TFBGA | - | 60 | - | Volatile | Automotive grade | -40°C~85°C TA | Tray | e1 | yes | Active | 3 (168 Hours) | 60 | EAR99 | TIN SILVER COPPER | - | - | AUTO/SELF REFRESH | 8542.32.00.28 | 1.7V~1.95V | BOTTOM | 260 | 1 | 1.8V | 0.8mm | 40 | 60 | - | - | 1.8V | 1.95V | - | 1.7V | - | - | - | 512Mb 32M x 16 | 1 | 110mA | - | - | 166MHz | 5.5ns | DRAM | Parallel | 16b | 32MX16 | 3-STATE | 16 | 12ns | 15b | 512 Mb | 0.00001A | - | AEC-Q100 | - | - | COMMON | - | - | - | - | - | 8192 | 24816 | 24816 | 1.1mm | 10mm | - | No | - | ROHS3 Compliant | ||
| IS46LR16320B-6BLA1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS25LP080D-JKLEAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
IC FLASH 8M SPI 133MHZ 8WSON
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | Surface Mount | 8-WDFN Exposed Pad | YES | - | - | Non-Volatile | - | -40°C~105°C TA | Bulk | e3 | - | Active | 3 (168 Hours) | 8 | - | Tin (Sn) | - | - | - | - | 2.3V~3.6V | DUAL | NOT SPECIFIED | 1 | 3V | 1.27mm | NOT SPECIFIED | - | R-PDSO-N8 | - | - | 3.6V | - | 2.3V | - | - | - | 8Mb 1M x 8 | - | - | SYNCHRONOUS | - | 133MHz | - | FLASH | SPI - Quad I/O, QPI, DTR | - | 1MX8 | - | 8 | 800μs | - | - | - | 8388608 bit | - | - | SERIAL | - | - | - | 3V | - | 1 | - | - | - | 0.8mm | 6mm | 5mm | - | - | ROHS3 Compliant | ||
| IS25LP080D-JKLE | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS61WV6416EEBLL-10BLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
IC SRAM 1M PARALLEL 48TFBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | Surface Mount | 48-TFBGA | YES | 48 | - | Volatile | - | -40°C~85°C TA | Tray | - | - | Active | 3 (168 Hours) | 48 | - | - | - | - | - | - | 2.4V~3.6V | BOTTOM | - | 1 | 3V | 0.75mm | - | - | - | Not Qualified | - | 3.6V | 2.5/3.3V | 2.4V | - | - | - | 1Mb 64K x 16 | - | - | - | - | - | - | SRAM | Parallel | - | 64KX16 | 3-STATE | 16 | 10ns | - | - | 0.004A | - | - | 10 ns | - | COMMON | - | - | - | 2V | - | - | - | - | 1.2mm | 8mm | 6mm | - | - | ROHS3 Compliant | ||
| IS61WV6416EEBLL-10BLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS61WV12816DBLL-10TLI-TRAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
SRAM Chip Async Single 2.5V/3.3V 2M-bit 128K x 16 10ns 44-Pin TSOP-II T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | Surface Mount | 44-TSOP (0.400, 10.16mm Width) | YES | 44 | - | Volatile | Industrial grade | -40°C~85°C TA | Tape & Reel (TR) | e3 | yes | Active | 3 (168 Hours) | 44 | - | MATTE TIN | - | - | - | - | 3V~3.6V | DUAL | 225 | 1 | 3.3V | 0.8mm | - | - | - | - | - | 3.6V | 2.5/3.3V | 2.4V | - | - | - | 2Mb 128K x 16 | 1 | 65mA | - | - | - | - | SRAM | Parallel | - | - | 3-STATE | 16 | 10ns | 17b | 2 Mb | 0.00007A | - | - | - | - | COMMON | Asynchronous | 16b | - | 2V | - | - | - | - | - | - | - | No | - | ROHS3 Compliant | ||
| IS61WV12816DBLL-10TLI-TR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS66WVC4M16EALL-7010BLI-TRAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
IC PSRAM 64M PARALLEL 54VFBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | - | Surface Mount | 54-VFBGA | - | - | 54-VFBGA (6x8) | Volatile | Industrial grade | -40°C~85°C TC | Tape & Reel (TR) | - | - | Active | 3 (168 Hours) | - | - | - | - | - | - | - | 1.7V~1.95V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 64Mb 4M x 16 | - | - | - | - | - | 70ns | PSRAM | Parallel | - | - | - | - | 70ns | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| IS66WVC4M16EALL-7010BLI-TR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS43TR16512AL-125KBLAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
IC DRAM 8G PARALLEL 96LFBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | Surface Mount | 96-LFBGA | YES | 96 | - | Volatile | - | 0°C~95°C TC | Bulk | e1 | - | Active | 3 (168 Hours) | 96 | EAR99 | - | - | - | AUTO/SELF REFRESH | 8542.32.00.36 | 1.283V~1.45V | BOTTOM | 260 | 1 | 1.5V | 0.8mm | 10 | - | - | - | 1.35V | 1.575V | - | 1.425V | - | - | - | 8Gb 512M x 16 | 1 | - | SYNCHRONOUS | - | 800MHz | 20ns | DRAM | Parallel | - | 512MX16 | - | 16 | 15ns | 15b | 8 Gb | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 1.4mm | 14mm | - | - | - | ROHS3 Compliant | ||
| IS43TR16512AL-125KBL | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS46LR16320C-6BLA2Anlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
DRAM 512M, 1.8V, 166Mhz Mobile DDR SDRAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 14 Weeks | Surface Mount | Surface Mount | 60-TFBGA | - | 60 | - | Volatile | Automotive grade | -40°C~105°C TA | Tray | - | - | Active | 3 (168 Hours) | 60 | - | - | - | - | AUTO/SELF REFRESH | - | 1.7V~1.95V | BOTTOM | - | 1 | 1.8V | 0.8mm | - | - | - | Not Qualified | 1.8V | 1.95V | - | 1.7V | - | - | - | 512Mb 32M x 16 | 1 | 110mA | SYNCHRONOUS | 60mA | 166MHz | 5.5ns | DRAM | Parallel | 16b | 32MX16 | 3-STATE | 16 | 15ns | 15b | 512 Mb | 0.0003A | - | AEC-Q100 | - | - | COMMON | - | - | - | - | - | 8192 | 24816 | 24816 | 1.1mm | 10mm | - | - | - | ROHS3 Compliant | ||
| IS46LR16320C-6BLA2 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS43DR16640C-3DBLAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
IC DRAM 1G PARALLEL 84TWBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | Surface Mount | 84-TFBGA | YES | - | - | Volatile | Commercial grade | 0°C~85°C TC | Tray | e1 | - | Active | 3 (168 Hours) | 84 | EAR99 | TIN SILVER COPPER | - | - | AUTO/SELF REFRESH | - | 1.7V~1.9V | BOTTOM | 260 | 1 | 1.8V | 0.8mm | 10 | - | R-PBGA-B84 | Not Qualified | - | 1.9V | 1.8V | 1.7V | - | - | - | 1Gb 64M x 16 | 1 | - | SYNCHRONOUS | - | 333MHz | 450ps | DRAM | Parallel | - | 64MX16 | 3-STATE | 16 | 15ns | - | - | 0.025A | 1073741824 bit | - | - | - | COMMON | - | - | - | - | - | 8192 | 48 | 48 | 1.2mm | 12.5mm | 8mm | - | - | ROHS3 Compliant | ||
| IS43DR16640C-3DBL | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS43LR32160C-6BLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
DRAM 512M, 1.8V, 166Mhz Mobile DDR
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 14 Weeks | - | Surface Mount | 90-TFBGA | YES | 90 | - | Volatile | Industrial grade | -40°C~85°C TA | Tray | - | - | Active | 3 (168 Hours) | 90 | - | - | - | - | AUTO/SELF REFRESH | - | 1.7V~1.95V | BOTTOM | - | 1 | 1.8V | 0.8mm | - | - | - | Not Qualified | 1.8V | 1.95V | - | 1.7V | - | - | - | 512Mb 16M x 32 | 1 | - | SYNCHRONOUS | 60mA | 166MHz | 5.5ns | DRAM | Parallel | 32b | 16MX32 | 3-STATE | 32 | 12ns | - | - | 0.00001A | 536870912 bit | - | - | - | COMMON | - | - | - | - | - | 8192 | 24816 | 24816 | 1.2mm | 13mm | - | - | No SVHC | ROHS3 Compliant | ||
| IS43LR32160C-6BLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS43TR16256A-107MBLI-TRAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
IC DRAM 4G PARALLEL 96TWBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | - | Surface Mount | 96-TFBGA | YES | - | - | Volatile | - | -40°C~95°C TC | Tape & Reel (TR) | - | - | Active | 3 (168 Hours) | 96 | - | - | - | - | AUTO/SELF REFRESH | - | 1.425V~1.575V | BOTTOM | NOT SPECIFIED | 1 | 1.5V | 0.8mm | NOT SPECIFIED | - | R-PBGA-B96 | - | - | 1.575V | - | 1.425V | - | - | - | 4Gb 256M x 16 | 1 | - | SYNCHRONOUS | - | 933MHz | 20ns | DRAM | Parallel | - | 256MX16 | - | 16 | 15ns | - | - | - | 4294967296 bit | - | - | - | - | - | - | - | - | - | - | - | - | 1.2mm | 13mm | 9mm | - | - | ROHS3 Compliant | ||
| IS43TR16256A-107MBLI-TR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS66WVC4M16ALL-7010BLI-TRAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
SRAM 64Mb 1.54M x 16 70ns Pseudo SRAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | Surface Mount | 54-VFBGA | - | 54 | 54-VFBGA (6x8) | Volatile | - | -40°C~85°C TA | Tape & Reel (TR) | - | - | Discontinued | 3 (168 Hours) | - | - | - | 85°C | -40°C | - | - | 1.7V~1.95V | - | - | - | - | - | - | - | - | - | - | - | - | - | Parallel | 1.95V | 1.7V | 64Mb 4M x 16 | - | - | - | - | - | 70ns | PSRAM | Parallel | - | - | - | - | 70ns | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| IS66WVC4M16ALL-7010BLI-TR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS25LP032D-JKLEAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
NOR Flash Serial-SPI 2.5V/3V/3.3V 32M-bit 8ns 8-Pin WSON EP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | Surface Mount | 8-WDFN Exposed Pad | YES | - | - | Non-Volatile | - | -40°C~105°C TA | Tray | e3 | yes | Active | 3 (168 Hours) | 8 | - | Tin (Sn) | - | - | - | - | 2.3V~3.6V | DUAL | NOT SPECIFIED | 1 | 3V | 1.27mm | NOT SPECIFIED | - | R-PDSO-N8 | - | - | 3.6V | - | 2.3V | - | - | - | 32Mb 4M x 8 | - | - | SYNCHRONOUS | - | 133MHz | - | FLASH | SPI - Quad I/O, QPI, DTR | - | 4MX8 | - | 8 | 800μs | - | - | - | 33554432 bit | - | - | SERIAL | - | - | - | 3V | - | 1 | - | - | - | 0.8mm | 6mm | 5mm | - | - | ROHS3 Compliant | ||
| IS25LP032D-JKLE | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS42S16320F-7BLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 54TFBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | - | Surface Mount | 54-TFBGA | YES | - | - | Volatile | Industrial grade | -40°C~85°C TA | Tray | e1 | - | Active | 3 (168 Hours) | 54 | - | Tin/Silver/Copper (Sn/Ag/Cu) | - | - | AUTO/SELF REFRESH | - | 3V~3.6V | BOTTOM | - | 1 | 3.3V | 0.8mm | - | - | R-PBGA-B54 | Not Qualified | - | 3.6V | 3.3V | 3V | - | - | - | 512Mb 32M x 16 | 1 | - | SYNCHRONOUS | - | 143MHz | 5.4ns | DRAM | Parallel | - | 32MX16 | 3-STATE | 16 | - | - | - | 0.004A | 536870912 bit | - | - | - | COMMON | - | - | - | - | - | 8192 | 1248FP | 1248 | 1.2mm | 13mm | 8mm | - | - | ROHS3 Compliant | ||
| IS42S16320F-7BLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS61C6416AL-12KLI-TRAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
SRAM Chip Async Single 5V 1M-bit 64K x 16 12ns 44-Pin SOJ T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | Surface Mount | 44-BSOJ (0.400, 10.16mm Width) | - | 44 | 44-SOJ | Volatile | Industrial grade | -40°C~85°C TA | Tape & Reel (TR) | - | - | Active | 2 (1 Year) | - | - | - | 85°C | -40°C | - | - | 4.5V~5.5V | - | - | - | - | - | - | - | - | - | 5V | - | - | - | Parallel | 5.5V | 4.5V | 1Mb 64K x 16 | 1 | 45mA | - | - | - | 12ns | SRAM | Parallel | - | - | - | - | 12ns | 16b | 1 Mb | - | - | - | - | - | - | Asynchronous | 16b | - | - | - | - | - | - | - | - | - | No | - | ROHS3 Compliant | ||
| IS61C6416AL-12KLI-TR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS25LP032D-JKLE-TRAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
IC FLASH 32M SPI 133MHZ 8WSON
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | Surface Mount | 8-WDFN Exposed Pad | YES | - | - | Non-Volatile | - | -40°C~105°C TA | Tape & Reel (TR) | - | yes | Active | 3 (168 Hours) | 8 | - | - | - | - | - | - | 2.3V~3.6V | DUAL | NOT SPECIFIED | 1 | 3V | 1.27mm | NOT SPECIFIED | - | R-PDSO-N8 | - | - | 3.6V | - | 2.3V | - | - | - | 32Mb 4M x 8 | - | - | SYNCHRONOUS | - | 133MHz | - | FLASH | SPI - Quad I/O, QPI, DTR | - | 4MX8 | - | 8 | 800μs | - | - | - | 33554432 bit | - | - | SERIAL | - | - | - | 3V | - | - | - | - | - | 0.8mm | 6mm | 5mm | - | - | ROHS3 Compliant | ||
| IS25LP032D-JKLE-TR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS42S16800F-6BLAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
DRAM 128M 8Mx16 166Mhz SDR SDRAM, 3.3V
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | - | Surface Mount | 54-TFBGA | YES | 54 | - | Volatile | Commercial grade | 0°C~70°C TA | Tray | - | - | Active | 3 (168 Hours) | 54 | EAR99 | - | - | - | AUTO/SELF REFRESH | - | 3V~3.6V | BOTTOM | - | 1 | 3.3V | 0.8mm | - | 54 | - | Not Qualified | - | 3.6V | 3.3V | 3V | - | - | - | 128Mb 8M x 16 | 1 | - | SYNCHRONOUS | - | 166MHz | 5.4ns | DRAM | Parallel | 16b | 8MX16 | 3-STATE | 16 | - | - | - | 0.002A | 134217728 bit | - | - | - | COMMON | - | - | - | - | - | 4096 | 1248FP | 1248 | 1.2mm | 8mm | - | - | - | ROHS3 Compliant | ||
| IS42S16800F-6BL |
Индекс :
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