| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Contact Plating | Mount | Mounting Type | Package / Case | Surface Mount | Number of Pins | Manufacturer Package Identifier | Memory Types | Usage Level | Operating Temperature | Packaging | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Voltage - Supply | Terminal Position | Peak Reflow Temperature (Cel) | Number of Functions | Supply Voltage | Terminal Pitch | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Supply Voltage-Min (Vsup) | Interface | Memory Size | Number of Ports | Nominal Supply Current | Operating Mode | Max Supply Current | Clock Frequency | Access Time | Memory Format | Memory Interface | Data Bus Width | Organization | Output Characteristics | Memory Width | Write Cycle Time - Word, Page | Address Bus Width | Density | Standby Current-Max | Memory Density | Max Frequency | Access Time (Max) | Parallel/Serial | I/O Type | Sync/Async | Word Size | Programming Voltage | Standby Voltage-Min | Page Size | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Height | Height Seated (Max) | Length | Width | Radiation Hardening | REACH SVHC | RoHS Status | Lead Free |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипIS25LQ040B-JNLEAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
IC FLASH 4M SPI 104MHZ 8SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | 8 | - | Non-Volatile | - | -40°C~105°C TA | Bulk | e3 | - | Active | 3 (168 Hours) | 8 | - | - | Tin (Sn) | - | - | 2.3V~3.6V | DUAL | NOT SPECIFIED | 1 | 3V | 1.27mm | NOT SPECIFIED | - | - | - | 3.3V | 3.6V | - | 2.3V | SPI | 4Mb 512K x 8 | - | - | SYNCHRONOUS | - | 104MHz | 8 ns | FLASH | SPI - Quad I/O | - | 4MX1 | - | 1 | 800μs | 24b | 4 Mb | - | - | - | - | SERIAL | - | - | - | 3V | - | 256B | - | - | - | 1.75mm | - | 4.9mm | - | - | - | ROHS3 Compliant | - | ||
| IS25LQ040B-JNLE | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS61WV12816DBLL-10TLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
SRAM Chip Async Single 2.5V/3.3V 2M-bit 128K x 16 10ns 44-Pin TSOP-II
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | - | Surface Mount | 44-TSOP (0.400, 10.16mm Width) | YES | 44 | - | Volatile | Industrial grade | -40°C~85°C TA | Tray | e3 | yes | Active | 3 (168 Hours) | 44 | - | - | Matte Tin (Sn) - annealed | - | - | 3V~3.6V | DUAL | 260 | 1 | 3.3V | 0.8mm | 10 | 44 | - | - | - | 3.6V | 2.5/3.3V | 2.4V | - | 2Mb 128K x 16 | 1 | 65mA | - | - | - | - | SRAM | Parallel | - | - | 3-STATE | - | 10ns | 17b | 2 Mb | 0.00007A | - | - | - | - | COMMON | Asynchronous | 16b | - | 2V | - | - | - | - | 1.05mm | - | 18.54mm | 10.29mm | No | - | ROHS3 Compliant | - | ||
| IS61WV12816DBLL-10TLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS61C6416AL-12TLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
SRAM Chip Asynchronous Single 5 Volt 1m-Bit 64k X 16 12ns 44-Pin TSOP-II
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | - | Surface Mount | 44-TSOP (0.400, 10.16mm Width) | YES | 44 | - | Volatile | Industrial grade | -40°C~85°C TA | Tray | e3 | yes | Active | 3 (168 Hours) | 44 | - | - | Matte Tin (Sn) - annealed | - | - | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 0.8mm | 40 | 44 | - | - | 5V | - | 5V | - | - | 1Mb 64K x 16 | 1 | 45mA | - | - | - | - | SRAM | Parallel | - | - | 3-STATE | - | 12ns | 16b | 1 Mb | - | - | - | - | - | COMMON | Asynchronous | 16b | - | 2V | - | - | - | - | 1.05mm | - | 18.52mm | 10.29mm | No | - | ROHS3 Compliant | Lead Free | ||
| IS61C6416AL-12TLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS61WV51216BLL-10TLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
IC SRAM 8M PARALLEL 44TSOP II
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | - | Surface Mount | 44-TSOP (0.400, 10.16mm Width) | YES | 44 | - | Volatile | Industrial grade | -40°C~85°C TA | Tray | e3 | yes | Active | 3 (168 Hours) | 44 | - | - | Matte Tin (Sn) - annealed | - | - | 2.4V~3.6V | DUAL | 260 | 1 | 3.3V | 0.8mm | 10 | 44 | - | - | - | 3.6V | 2.5/3.3V | 2.4V | - | 8Mb 512K x 16 | 1 | 95mA | - | 25mA | - | - | SRAM | Parallel | - | - | 3-STATE | 16 | 10ns | 19b | 8 Mb | 0.02A | - | 100MHz | - | - | COMMON | Asynchronous | 16b | - | - | - | - | - | - | - | - | - | - | No | No SVHC | ROHS3 Compliant | - | ||
| IS61WV51216BLL-10TLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS61WV25616BLL-10BLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
IC SRAM 4M PARALLEL 48MINIBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | - | Surface Mount | 48-TFBGA | YES | 48 | - | Volatile | Industrial grade | -40°C~85°C TA | Tray | e1 | yes | Active | 3 (168 Hours) | 48 | - | - | Tin/Silver/Copper (Sn/Ag/Cu) | - | - | 2.4V~3.6V | BOTTOM | 260 | 1 | 3.3V | 0.75mm | 40 | 48 | - | - | - | 3.6V | 2.5/3.3V | 2.4V | - | 4Mb 256K x 16 | 1 | 45mA | - | - | - | - | SRAM | Parallel | - | - | 3-STATE | - | 10ns | 18b | 4 Mb | 0.009A | - | - | - | - | COMMON | Asynchronous | 16b | - | 2V | - | - | - | - | 900μm | - | 8.1mm | 6.1mm | No | - | ROHS3 Compliant | - | ||
| IS61WV25616BLL-10BLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS61WV102416BLL-10MLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
IC SRAM 16M PARALLEL 48MINIBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | - | Surface Mount | 48-TFBGA | YES | 48 | - | Volatile | Industrial grade | -40°C~85°C TA | Tray | e1 | yes | Active | 3 (168 Hours) | 48 | - | - | Tin/Silver/Copper (Sn/Ag/Cu) | - | - | 2.4V~3.6V | BOTTOM | 260 | 1 | 3.3V | 0.75mm | 40 | 48 | - | - | 3.3V | 3.6V | - | 2.4V | - | 16Mb 1M x 16 | 1 | 95mA | - | - | - | - | SRAM | Parallel | - | - | 3-STATE | 16 | 10ns | 20b | 16 Mb | 0.02A | - | - | - | - | COMMON | Asynchronous | 16b | - | - | - | - | - | - | - | - | - | - | No | No SVHC | ROHS3 Compliant | - | ||
| IS61WV102416BLL-10MLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS43TR16512BL-125KBLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
IC DRAM 8G PARALLEL 96FBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | - | Surface Mount | 96-TFBGA | YES | - | - | Volatile | - | -40°C~95°C TC | Tray | e1 | - | Active | 3 (168 Hours) | 96 | - | EAR99 | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | AUTO/SELF REFRESH | - | 1.283V~1.45V | BOTTOM | 260 | 1 | 1.35V | 0.8mm | 10 | - | R-PBGA-B96 | - | - | 1.45V | - | 1.283V | - | 8Gb 512M x 16 | 1 | - | SYNCHRONOUS | - | 800MHz | 20ns | DRAM | Parallel | - | 512MX16 | - | 16 | - | - | - | - | 8589934592 bit | - | - | - | - | - | - | - | - | - | - | - | - | - | 1.2mm | 14mm | 10mm | - | - | ROHS3 Compliant | - | ||
| IS43TR16512BL-125KBLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS62WV5128BLL-55QLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
INTEGRATED SILICON SOLUTION (ISSI) IS62WV5128BLL-55QLI SRAM, 512K X 8, 3V, 55NS 32SOP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | Surface Mount | Surface Mount | 32-SOIC (0.445, 11.30mm Width) | - | 32 | - | Volatile | - | -40°C~85°C TA | Tube | e3 | yes | Active | 3 (168 Hours) | 32 | - | - | Matte Tin (Sn) - annealed | - | - | 2.5V~3.6V | DUAL | 260 | 1 | 2.8V | - | 40 | - | - | - | 3.3V | 3.6V | - | 2.5V | - | 4Mb 512K x 8 | 1 | 45mA | - | - | - | - | SRAM | Parallel | - | - | 3-STATE | 8 | 55ns | 19b | 4 Mb | - | - | - | 55 ns | - | COMMON | Asynchronous | 8b | - | - | - | - | - | - | - | 3mm | 20.445mm | - | No | No SVHC | ROHS3 Compliant | - | ||
| IS62WV5128BLL-55QLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS43TR16256A-15HBLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
DRAM 4G, 1.5V, 1333Mhz DDR3 SDRAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Copper, Silver, Tin | Surface Mount | Surface Mount | 96-TFBGA | - | 96 | - | Volatile | - | -40°C~95°C TC | Tray | e1 | - | Active | 3 (168 Hours) | 96 | - | - | Tin/Silver/Copper (Sn/Ag/Cu) | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | - | 1.425V~1.575V | BOTTOM | - | 1 | 1.5V | 0.8mm | - | - | - | - | 1.5V | 1.575V | - | 1.425V | - | 4Gb 256M x 16 | 1 | 200mA | SYNCHRONOUS | - | 667MHz | 20ns | DRAM | Parallel | 16b | 256MX16 | - | 16 | 15ns | 18b | 4 Gb | - | - | - | - | - | - | - | - | - | - | 2kB | - | - | - | - | 1.2mm | 13mm | - | - | No SVHC | ROHS3 Compliant | - | ||
| IS43TR16256A-15HBLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS45S16800F-7TLA1Anlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
DRAM 128M 8Mx16 143Mhz SDR SDRAM 3.3v
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | Surface Mount | Surface Mount | 54-TSOP (0.400, 10.16mm Width) | - | 54 | - | Volatile | Automotive grade | -40°C~85°C TA | Tray | e3 | - | Active | 3 (168 Hours) | 54 | - | EAR99 | Matte Tin (Sn) | AUTO/SELF REFRESH | - | 3V~3.6V | DUAL | - | 1 | 3.3V | 0.8mm | - | 54 | - | Not Qualified | 3.3V | 3.6V | - | 3V | - | 128Mb 8M x 16 | 1 | 100mA | SYNCHRONOUS | - | 143MHz | 5.4ns | DRAM | Parallel | 16b | 8MX16 | 3-STATE | 16 | - | 14b | 128 Mb | 0.002A | - | - | - | - | COMMON | - | - | - | - | - | 4096 | 1248FP | 1248 | - | 1.2mm | 22.22mm | - | - | - | ROHS3 Compliant | - | ||
| IS45S16800F-7TLA1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS62C256AL-45ULI-TRAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
SRAM Chip Async Single 5V 256K-Bit 32K x 8 45ns 28-Pin SOP T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | - | Surface Mount | 28-SOIC (0.330, 8.38mm Width) | YES | 28 | - | Volatile | Industrial grade | -40°C~85°C TA | Tape & Reel (TR) | e3 | yes | Active | 3 (168 Hours) | 28 | - | EAR99 | Matte Tin (Sn) | - | - | 4.5V~5.5V | DUAL | 260 | 1 | 5V | - | 40 | 28 | - | - | 5V | - | - | - | - | 256Kb 32K x 8 | 1 | 25mA | - | - | - | - | SRAM | Parallel | - | 32KX8 | - | 8 | 45ns | 15b | 256 kb | - | - | - | 45 ns | - | - | Asynchronous | 8b | - | - | - | - | - | - | - | 2.84mm | - | - | No | - | ROHS3 Compliant | - | ||
| IS62C256AL-45ULI-TR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS62WV25616DBLL-45TLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
INTEGRATED SILICON SOLUTION (ISSI) - IS62WV25616DBLL-45TLI - SRAM, 4 Mbit, 256K x 16bit, 2.5V a 3.6V, TSOP-II, 44 Pines, 45 ns
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | Surface Mount | 44-TSOP (0.400, 10.16mm Width) | YES | 44 | - | Volatile | Industrial grade | -40°C~85°C TA | Tray | e3 | yes | Discontinued | 3 (168 Hours) | 44 | - | - | MATTE TIN | - | - | 2.5V~3.6V | DUAL | 260 | 1 | - | 0.8mm | 40 | 44 | - | - | - | 3.6V | 2.5/3.3V | 2.3V | - | 4Mb 256K x 16 | 1 | 18mA | - | 3mA | - | - | SRAM | Parallel | - | - | 3-STATE | - | 45ns | 18b | 4 Mb | 0.000007A | - | - | 45 ns | - | COMMON | Asynchronous | 16b | - | - | - | - | - | - | 1.05mm | - | 18.54mm | 10.29mm | No | No SVHC | ROHS3 Compliant | - | ||
| IS62WV25616DBLL-45TLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS62C10248AL-55TLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
SRAM Chip Async Single 5V 8M-Bit 1M x 8 55ns 44-Pin TSOP-II
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | - | Surface Mount | 44-TSOP (0.400, 10.16mm Width) | YES | 44 | - | Volatile | Industrial grade | -40°C~85°C TA | Tray | e3 | yes | Active | 3 (168 Hours) | 44 | - | - | MATTE TIN | - | - | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 0.8mm | 40 | 44 | - | - | 5V | - | 5V | - | - | 8Mb 1M x 8 | 1 | 25mA | - | - | - | - | SRAM | Parallel | - | - | 3-STATE | 8 | 55ns | 20b | 8 Mb | 0.00006A | - | - | 55 ns | - | COMMON | Asynchronous | 8b | - | 2V | - | - | - | - | - | - | - | - | No | - | ROHS3 Compliant | - | ||
| IS62C10248AL-55TLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS62WV25616BLL-55TLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
SRAM Chip Asynchronous Single 3.3 Volt 4m-Bit 256k X 16 55ns 44-Pin TSOP-II
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | Surface Mount | Surface Mount | 44-TSOP (0.400, 10.16mm Width) | - | 44 | - | Volatile | Industrial grade | -40°C~85°C TA | Tray | e3 | yes | Active | 3 (168 Hours) | 44 | - | - | Matte Tin (Sn) | - | - | 2.5V~3.6V | DUAL | 260 | 1 | - | 0.8mm | 40 | 44 | - | - | 3.3V | 3.6V | - | 2.5V | - | 4Mb 256K x 16 | 1 | 15mA | - | - | - | - | SRAM | Parallel | - | - | 3-STATE | - | 55ns | 18b | 4 Mb | - | - | 18MHz | 55 ns | - | COMMON | Asynchronous | 16b | - | - | - | - | - | - | 1.05mm | - | 18.52mm | 10.29mm | No | - | ROHS3 Compliant | Lead Free | ||
| IS62WV25616BLL-55TLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS62WV1288DBLL-45HLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
SRAM, 1MBIT, 45NS, 32STSOP; Memory Size: 1Mbit; Memory Configuration: 128K x 8; Su
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | Surface Mount | 32-TFSOP (0.465, 11.80mm Width) | YES | 32 | - | Volatile | - | -40°C~85°C TA | Tray | e3 | yes | Not For New Designs | 3 (168 Hours) | 32 | - | EAR99 | Matte Tin (Sn) | - | - | 2.3V~3.6V | DUAL | 260 | 1 | 3.3V | 0.5mm | 40 | 32 | - | Not Qualified | - | 3.6V | 2.5/3.3V | 2.3V | - | 1Mb 128K x 8 | 1 | 8mA | - | - | - | - | SRAM | Parallel | - | - | 3-STATE | - | 45ns | 17b | 1 Mb | 0.000004A | - | 22MHz | 45 ns | - | COMMON | Asynchronous | 8b | - | - | - | - | - | - | 1.05mm | - | 18.5mm | 8.2mm | - | No SVHC | ROHS3 Compliant | - | ||
| IS62WV1288DBLL-45HLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS42S16320F-7TLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 54TSOP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Tin | Surface Mount | Surface Mount | 54-TSOP (0.400, 10.16mm Width) | - | 54 | TSOP-54-22.22000X10.16000 | Volatile | Industrial grade | -40°C~85°C TA | Tray | - | - | Active | 3 (168 Hours) | 54 | - | EAR99 | - | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | - | 3V~3.6V | DUAL | - | 1 | 3.3V | 0.8mm | - | - | - | Not Qualified | 3.3V | 3.6V | - | 3V | - | 512Mb 32M x 16 | 1 | 110mA | SYNCHRONOUS | - | 143MHz | 5.4ns | DRAM | Parallel | 16b | 32MX16 | 3-STATE | 16 | - | 13b | 512 Mb | 0.004A | - | - | - | - | COMMON | - | - | - | - | - | 8192 | 1248FP | 1248 | 1.2mm | - | 22.22mm | - | - | - | ROHS3 Compliant | - | ||
| IS42S16320F-7TLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS61LV6416-10TLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
SRAM Chip Async Single 3.3V 1M-bit 64K x 16 10ns 44-Pin TSOP-II
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | Surface Mount | Surface Mount | 44-TSOP (0.400, 10.16mm Width) | - | 44 | - | Volatile | - | -40°C~85°C TA | Tray | e3 | yes | Active | 2 (1 Year) | 44 | SMD/SMT | - | Matte Tin (Sn) - annealed | - | - | 3.135V~3.6V | DUAL | 260 | 1 | 3.3V | 0.8mm | 40 | 44 | - | - | 3.3V | 3.63V | - | - | - | 1Mb 64K x 16 | 1 | 130mA | - | - | - | - | SRAM | Parallel | - | - | 3-STATE | 16 | 10ns | 16b | 1 Mb | - | - | - | - | - | COMMON | Asynchronous | 16b | - | - | - | - | - | - | - | - | - | - | No | - | ROHS3 Compliant | - | ||
| IS61LV6416-10TLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS61WV20488BLL-10TLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
INTEGRATED SILICON SOLUTION (ISSI) - IS61WV20488BLL-10TLI - SRAM 16MBIT 10NS 44TSOPII
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | - | Surface Mount | 44-TSOP (0.400, 10.16mm Width) | YES | 44 | - | Volatile | Industrial grade | -40°C~85°C TA | Tray | e3 | yes | Active | 3 (168 Hours) | 44 | - | - | Matte Tin (Sn) - annealed | - | - | 2.4V~3.6V | DUAL | 260 | 1 | 3V | 0.8mm | 40 | 44 | - | - | - | 3.6V | 2.5/3.3V | 2.4V | - | 16Mb 2M x 8 | 1 | 100mA | - | - | - | - | SRAM | Parallel | - | 2MX8 | 3-STATE | 8 | 10ns | 21b | 16 Mb | 0.025A | - | - | - | - | COMMON | Asynchronous | 8b | - | - | - | - | - | - | - | - | - | - | No | No SVHC | ROHS3 Compliant | - | ||
| IS61WV20488BLL-10TLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS43DR16160A-37CBLAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
INTEGRATED SILICON SOLUTION (ISSI) IS43DR16160A-37CBL SDRAM, DDR2, 16M X 16, 1.8V, 84BGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | Surface Mount | Surface Mount | 84-TFBGA | - | 84 | - | Volatile | - | 0°C~70°C TA | Tray | e1 | yes | Obsolete | 3 (168 Hours) | 84 | - | EAR99 | TIN SILVER COPPER | AUTO/SELF REFRESH | 8542.32.00.24 | 1.7V~1.9V | BOTTOM | 260 | 1 | 1.8V | 0.8mm | 40 | 84 | - | - | 1.8V | 1.9V | - | 1.7V | - | 256Mb 16M x 16 | 1 | 270mA | - | 120mA | 266MHz | 500ps | DRAM | Parallel | 16b | 16MX16 | 3-STATE | 16 | 15ns | 15b | 256 Mb | 0.005A | - | - | - | - | COMMON | - | - | - | - | 256MB | 8192 | 48 | 48 | - | 1.2mm | 12.5mm | - | No | No SVHC | RoHS Compliant | - | ||
| IS43DR16160A-37CBL | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS62WV5128BLL-55T2LIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
IC SRAM 4M PARALLEL 32TSOP II
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | Surface Mount | Surface Mount | 32-SOIC (0.400, 10.16mm Width) | - | 32 | - | Volatile | Industrial grade | -40°C~85°C TA | Tray | e3 | yes | Active | 3 (168 Hours) | 32 | - | - | Matte Tin (Sn) - annealed | - | - | 2.5V~3.6V | DUAL | 260 | 1 | 2.8V | - | 40 | 32 | - | - | 3.3V | 3.6V | - | 2.5V | - | 4Mb 512K x 8 | 1 | 45mA | - | - | - | - | SRAM | Parallel | - | - | 3-STATE | 8 | 55ns | 19b | 4 Mb | - | - | - | 55 ns | - | COMMON | Asynchronous | 8b | - | - | - | - | - | - | - | - | 20.95mm | - | No | - | ROHS3 Compliant | - | ||
| IS62WV5128BLL-55T2LI |
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