| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Mount | Mounting Type | Package / Case | Surface Mount | Number of Pins | Supplier Device Package | Memory Types | Usage Level | Operating Temperature | Packaging | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Voltage - Supply | Terminal Position | Peak Reflow Temperature (Cel) | Number of Functions | Supply Voltage | Terminal Pitch | Frequency | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Supply Voltage-Min (Vsup) | Interface | Max Supply Voltage | Min Supply Voltage | Memory Size | Number of Ports | Nominal Supply Current | Operating Mode | Max Supply Current | Clock Frequency | Access Time | Memory Format | Memory Interface | Data Bus Width | Organization | Output Characteristics | Memory Width | Write Cycle Time - Word, Page | Address Bus Width | Density | Standby Current-Max | Memory Density | Max Frequency | I/O Type | Sync/Async | Word Size | Programming Voltage | Standby Voltage-Min | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Self Refresh | Height Seated (Max) | Length | Width | Radiation Hardening | RoHS Status |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипIS43TR16128BL-15HBLI-TRAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
IC DRAM 2G PARALLEL 96TWBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | - | Surface Mount | 96-TFBGA | - | - | - | Volatile | - | -40°C~95°C TC | Tape & Reel (TR) | - | - | Active | 3 (168 Hours) | - | - | - | - | - | - | - | 1.283V~1.45V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 2Gb 128M x 16 | - | - | - | - | 667MHz | 20ns | DRAM | Parallel | - | - | - | - | 15ns | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| IS43TR16128BL-15HBLI-TR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS43LR32160B-6BLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
DRAM Chip DDR SDRAM 512M-Bit 16Mx32 1.8V 90-Pin TFBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 14 Weeks | Surface Mount | Surface Mount | 90-TFBGA | - | 90 | - | Volatile | Industrial grade | -40°C~85°C TA | Tray | e1 | yes | Active | 3 (168 Hours) | 90 | EAR99 | TIN SILVER COPPER | - | - | AUTO/SELF REFRESH | 8542.32.00.28 | 1.7V~1.95V | BOTTOM | 260 | 1 | 1.8V | 0.8mm | - | 40 | 90 | - | Not Qualified | 1.8V | 1.95V | - | 1.7V | - | - | - | 512Mb 16M x 32 | 1 | 110mA | SYNCHRONOUS | - | 166MHz | 5.5ns | DRAM | Parallel | 32b | 16MX32 | 3-STATE | 32 | 12ns | 15b | 512 Mb | 0.00001A | - | - | COMMON | - | - | - | - | 8192 | 24816 | 24816 | - | 1.2mm | 13mm | - | - | ROHS3 Compliant | ||
| IS43LR32160B-6BLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS61LPS25636B-200TQLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
IC SRAM 9M PARALLEL 100LQFP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | Surface Mount | 100-LQFP | YES | - | - | Volatile | Industrial grade | -40°C~85°C TA | Tray | - | - | Active | 3 (168 Hours) | 100 | - | - | - | - | - | 8542.32.00.41 | 3.135V~3.465V | QUAD | NOT SPECIFIED | 1 | 3.3V | 0.65mm | - | NOT SPECIFIED | - | R-PQFP-G100 | - | - | 3.465V | - | 3.135V | - | - | - | 9Mb 256K x 36 | - | - | - | - | 200MHz | 3.1ns | SRAM | Parallel | - | 256KX36 | - | 36 | - | - | - | - | 9437184 bit | - | - | - | - | - | - | - | - | - | - | 1.6mm | 20mm | 14mm | - | ROHS3 Compliant | ||
| IS61LPS25636B-200TQLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS61LF12836EC-6.5TQLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
SRAM 4M, 3.3V, 6.5ns 128Kx36 Sync SRAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | Surface Mount | 100-LQFP | YES | 100 | - | Volatile | Industrial grade | -40°C~85°C TA | Tray | e3 | - | Active | 3 (168 Hours) | 100 | 3A991.B.2.A | Matte Tin (Sn) | - | - | - | - | 3.135V~3.465V | QUAD | 260 | 1 | 3.3V | 0.65mm | - | 10 | 100 | - | Not Qualified | 3.3V | - | - | 3.135V | - | - | - | 4.5Mb 128K x 36 | 4 | 190mA | - | - | 133MHz | 6.5ns | SRAM | Parallel | - | 128KX36 | 3-STATE | 36 | - | 17b | 4 Mb | 0.085A | - | - | COMMON | Synchronous | 36b | - | - | - | - | - | - | 1.6mm | 20mm | - | - | ROHS3 Compliant | ||
| IS61LF12836EC-6.5TQLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS61NLP102418-250B3Anlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
IC SRAM 18M PARALLEL 165TFBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | Surface Mount | 165-TFBGA | YES | 165 | - | Volatile | - | 0°C~70°C TA | Tray | e0 | no | Obsolete | 2 (1 Year) | 165 | - | Tin/Lead (Sn/Pb) | - | - | PIPELINED ARCHITECTURE | - | 3.135V~3.465V | BOTTOM | NOT SPECIFIED | 1 | 3.3V | 1mm | - | NOT SPECIFIED | 165 | - | Not Qualified | 3.3V | 3.465V | - | 3.135V | - | - | - | 18Mb 1M x 18 | 2 | 450mA | - | - | 250MHz | 2.6ns | SRAM | Parallel | - | 1MX18 | 3-STATE | 18 | - | 20b | 18 Mb | 0.06A | - | - | COMMON | Synchronous | 18b | - | 3.14V | - | - | - | - | - | 15mm | - | - | Non-RoHS Compliant | ||
| IS61NLP102418-250B3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS61QDB22M36A-333B4LIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
SRAM 72Mb 2Mx36 333Mhz QUAD Sync SRAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | Surface Mount | 165-LBGA | YES | 165 | - | Volatile | Industrial grade | -40°C~85°C TA | Tray | - | - | Active | 3 (168 Hours) | 165 | - | - | - | - | PIPELINED ARCHITECTURE | - | 1.71V~1.89V | BOTTOM | - | 1 | 1.8V | 1mm | - | - | 165 | - | - | 1.8V | 1.89V | - | 1.71V | - | - | - | 72Mb 2M x 36 | 2 | 1.2A | - | - | 333MHz | 1.35ns | SRAM | Parallel | - | - | - | 36 | - | 20b | 72 Mb | - | - | - | - | Synchronous | 36b | - | - | - | - | - | - | 1.4mm | 15mm | - | No | ROHS3 Compliant | ||
| IS61QDB22M36A-333B4LI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS41LV16100B-50TLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
DRAM Chip EDO 16M-Bit 1Mx16 3.3V 44-Pin TSOP-II
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Surface Mount | Surface Mount | 44-TSOP (0.400, 10.16mm Width) | - | 44 | - | Volatile | - | -40°C~85°C TA | Tray | e3 | yes | Obsolete | 2 (1 Year) | 44 | EAR99 | Matte Tin (Sn) - annealed | - | - | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | 8542.32.00.02 | 3V~3.6V | DUAL | 260 | 1 | 3.3V | 0.8mm | - | 10 | 50 | - | Not Qualified | 3.3V | 3.6V | - | 3V | - | - | - | 16Mb 1M x 16 | 1 | 180mA | ASYNCHRONOUS | - | - | 25ns | DRAM | Parallel | 16b | 1MX16 | 3-STATE | 16 | - | 10b | 16 Mb | 0.002A | - | - | COMMON | - | - | - | - | 1024 | - | - | NO | 1.2mm | 20.95mm | - | - | RoHS Compliant | ||
| IS41LV16100B-50TLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS41C16100C-50KLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
DRAM Chip EDO 16M-Bit 1Mx16 5V 42-Pin SOJ
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Surface Mount | Surface Mount | 42-BSOJ (0.400, 10.16mm Width) | - | 42 | - | Volatile | - | -40°C~85°C TA | Tube | e3 | yes | Obsolete | 3 (168 Hours) | 42 | EAR99 | Matte Tin (Sn) | - | - | CAS BEFORE RAS/SELF REFRESH/AUTO REFRESH | - | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 1.27mm | - | 40 | 42 | - | - | 5V | - | - | - | - | - | - | 16Mb 1M x 16 | 1 | 90mA | - | 90mA | - | 25ns | DRAM | Parallel | 16b | 1MX16 | - | 16 | - | 10b | 16 Mb | - | - | - | - | - | - | - | - | - | - | - | - | 3.76mm | 27.305mm | - | No | ROHS3 Compliant | ||
| IS41C16100C-50KLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS61WV6416DBLL-10TLI-TRAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
SRAM Chip Async Single 2.5V/3.3V 1M-bit 64K x 16 10ns T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | Surface Mount | 44-TSOP (0.400, 10.16mm Width) | - | 44 | - | Volatile | Industrial grade | -40°C~85°C TA | Tape & Reel (TR) | - | - | Active | 3 (168 Hours) | - | - | - | - | - | - | - | 2.4V~3.6V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 1Mb 64K x 16 | - | - | - | - | - | - | SRAM | Parallel | - | - | - | - | 10ns | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| IS61WV6416DBLL-10TLI-TR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS43LR32800G-6BLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
DRAM 256M, 1.8V, 166Mhz Mobile DDR SDRAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 14 Weeks | - | Surface Mount | 90-TFBGA | YES | 90 | - | Volatile | Industrial grade | -40°C~85°C TA | Tray | - | - | Active | 3 (168 Hours) | 90 | - | - | - | - | AUTO/SELF REFRESH | - | 1.7V~1.95V | BOTTOM | - | 1 | 1.8V | 0.8mm | - | - | - | - | Not Qualified | - | 1.95V | 1.8V | 1.7V | - | - | - | 256Mb 8M x 32 | 1 | - | SYNCHRONOUS | - | 166MHz | 5.5ns | DRAM | Parallel | 32b | 8MX32 | 3-STATE | 32 | 15ns | - | - | 0.00001A | 268435456 bit | - | COMMON | - | - | - | - | 4096 | 24816 | 24816 | - | 1.2mm | 13mm | - | - | ROHS3 Compliant | ||
| IS43LR32800G-6BLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS61LF25636A-7.5TQLI-TRAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
IC SRAM 9M PARALLEL 100TQFP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | Surface Mount | 100-LQFP | - | 100 | 100-TQFP (14x20) | Volatile | Industrial grade | -40°C~85°C TA | Tape & Reel (TR) | - | - | Active | 2 (1 Year) | - | - | - | 85°C | -40°C | - | - | 3.135V~3.6V | - | - | - | - | - | 117MHz | - | - | - | - | 3.3V | - | - | - | Parallel | 3.465V | 3.135V | 9Mb 256K x 36 | 4 | 185mA | - | - | 117MHz | 7.5ns | SRAM | Parallel | - | - | - | - | - | 18b | 9 Mb | - | - | 117MHz | - | Synchronous | 36b | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| IS61LF25636A-7.5TQLI-TR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS41LV16105C-50KLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
DRAM 16M, 3.3V, 50ns 1Mx16 Fast Page DRAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Surface Mount | Surface Mount | 42-BSOJ (0.400, 10.16mm Width) | - | 42 | - | Volatile | - | -40°C~85°C TA | Tube | - | - | Obsolete | 3 (168 Hours) | 42 | EAR99 | - | - | - | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | - | 3V~3.6V | DUAL | - | 1 | 3.3V | 1.27mm | - | - | 42 | - | - | 3.3V | 3.6V | - | 3V | - | - | - | 16Mb 1M x 16 | 1 | 90mA | - | 90mA | - | 25ns | DRAM | Parallel | 16b | 1MX16 | - | 16 | - | 10b | 16 Mb | - | - | - | - | - | - | - | - | - | - | - | - | 3.76mm | 27.305mm | - | No | ROHS3 Compliant | ||
| IS41LV16105C-50KLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS34ML01G081-TLI-TRAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
IC FLASH 1G PARALLEL 48TSOP I
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | Surface Mount | 48-TFSOP (0.724, 18.40mm Width) | YES | - | - | Non-Volatile | - | -40°C~85°C | Tape & Reel (TR) | - | - | Active | 3 (168 Hours) | 48 | - | - | - | - | - | - | 2.7V~3.6V | DUAL | NOT SPECIFIED | 1 | 3.3V | 0.5mm | - | NOT SPECIFIED | - | R-PDSO-G48 | - | - | 3.6V | - | 2.7V | - | - | - | 1Gb 128M x 8 | - | - | ASYNCHRONOUS | - | - | - | FLASH | Parallel | - | 128MX8 | - | 8 | 25ns | - | - | - | 1073741824 bit | - | - | - | - | 3.3V | - | - | - | - | - | 1.2mm | 18.4mm | 12mm | - | ROHS3 Compliant | ||
| IS34ML01G081-TLI-TR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS61LPS25618A-200TQLI-TRAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
IC SRAM 4.5MBIT 200MHZ 100TQFP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | Surface Mount | 100-LQFP | - | 100 | - | Volatile | Industrial grade | -40°C~85°C TA | Tape & Reel (TR) | - | - | Active | 2 (1 Year) | - | - | - | - | - | - | - | 3.135V~3.465V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 4.5Mb 256K x 18 | - | - | - | - | 200MHz | 3.1ns | SRAM | Parallel | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| IS61LPS25618A-200TQLI-TR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIS42S32200E-7TL-TRAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
DRAM Chip SDRAM 64M-Bit 2Mx32 3.3V 86-Pin TSOP-II T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Surface Mount | Surface Mount | 86-TFSOP (0.400, 10.16mm Width) | - | 86 | - | Volatile | - | 0°C~70°C TA | Tape & Reel (TR) | e3 | yes | Obsolete | 3 (168 Hours) | 86 | EAR99 | MATTE TIN | - | - | AUTO/SELF REFRESH | 8542.32.00.02 | 3V~3.6V | DUAL | 260 | 1 | 3.3V | 0.5mm | - | 40 | 86 | - | - | 3.3V | 3.6V | - | 3V | - | - | - | 64Mb 2M x 32 | 1 | 140mA | - | - | 143MHz | 5.5ns | DRAM | Parallel | 32b | 2MX32 | 3-STATE | 32 | - | 13b | 64 Mb | 0.002A | - | - | COMMON | - | - | - | - | 4096 | 1248FP | 1248 | - | 1.2mm | 22.22mm | - | No | RoHS Compliant | ||
| IS42S32200E-7TL-TR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS42SM32160C-7BLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
DRAM Chip Mobile SDRAM 512M-Bit 16Mx32 3.3V 90-Pin WBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Surface Mount | Surface Mount | 90-LFBGA | - | 90 | - | Volatile | - | -40°C~85°C TA | Tray | e1 | yes | Discontinued | 3 (168 Hours) | 90 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | - | - | AUTO/SELF REFRESH | 8542.32.00.28 | 3V~3.6V | BOTTOM | 260 | 1 | 3.3V | 0.8mm | - | 10 | 90 | - | Not Qualified | 3.3V | 3.6V | - | 3V | - | - | - | 512Mb 16M x 32 | 1 | 180mA | SYNCHRONOUS | - | 133MHz | 5.4ns | DRAM | Parallel | - | 16MX32 | 3-STATE | 32 | - | 15b | 512 Mb | 0.00004A | - | 143MHz | COMMON | - | - | - | - | 8192 | 1248FP | 1248 | - | 1.4mm | 13mm | - | - | ROHS3 Compliant | ||
| IS42SM32160C-7BLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS42S32200L-7BLAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
DRAM Chip SDRAM 64M-Bit 2Mx32 3.3V 90-Pin WBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Surface Mount | Surface Mount | 90-TFBGA | - | 90 | - | Volatile | Commercial grade | 0°C~70°C TA | Tray | - | - | Active | 3 (168 Hours) | 90 | EAR99 | - | - | - | AUTO/SELF REFRESH | 8542.32.00.02 | 3V~3.6V | BOTTOM | - | 1 | 3.3V | 0.8mm | - | - | 90 | - | Not Qualified | 3.3V | 3.6V | - | 3V | - | - | - | 64Mb 2M x 32 | 1 | 90mA | SYNCHRONOUS | 90mA | 143MHz | 5.4ns | DRAM | Parallel | 32b | 2MX32 | 3-STATE | 32 | - | 13b | 64 Mb | 0.002A | - | - | COMMON | - | - | - | - | 4096 | 1248FP | 1248 | - | 1.2mm | 13mm | - | - | ROHS3 Compliant | ||
| IS42S32200L-7BL | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS42RM32800K-75BLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
DRAM 256M, 2.5V, 133Mhz 8Mx32 Mobile SDR
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | Surface Mount | 90-TFBGA | YES | 90 | - | Volatile | Industrial grade | -40°C~85°C TA | Tray | - | - | Active | 3 (168 Hours) | 90 | - | - | - | - | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | - | 2.3V~3V | BOTTOM | - | 1 | 2.5V | 0.8mm | - | - | - | - | Not Qualified | - | 3V | 2.5V | 2.3V | - | - | - | 256Mb 8M x 32 | 1 | - | SYNCHRONOUS | - | 133MHz | 6ns | DRAM | Parallel | 32b | 8MX32 | 3-STATE | 32 | - | - | - | 0.0003A | 268435456 bit | - | COMMON | - | - | - | - | 4096 | 48 | 48 | - | 1.2mm | 13mm | - | - | ROHS3 Compliant | ||
| IS42RM32800K-75BLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS61LF102418A-7.5TQLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
IC SRAM 18M PARALLEL 100TQFP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | Surface Mount | 100-LQFP | YES | 100 | - | Volatile | Industrial grade | -40°C~85°C TA | Tray | e3 | yes | Obsolete | 2 (1 Year) | 100 | - | Matte Tin (Sn) - annealed | - | - | PIPELINED ARCHITECTURE, FLOW-THROUGH | - | 3.135V~3.6V | QUAD | 260 | 1 | 3.3V | 0.65mm | - | 40 | 100 | - | - | 3.3V | 3.465V | - | 3.135V | - | - | - | 18Mb 1M x 18 | 2 | 250mA | - | - | 117MHz | 7.5ns | SRAM | Parallel | - | 1MX18 | 3-STATE | 18 | - | 20b | 18 Mb | 0.075A | - | - | COMMON | Synchronous | 18b | - | 3.14V | - | - | - | - | 1.6mm | - | - | No | RoHS Compliant | ||
| IS61LF102418A-7.5TQLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS61NLP25636B-200TQLIAnlielectronics Тип | ISSI, Integrated Silicon Solution Inc |
SRAM PIPE.No-Wait, 200Mhz 256K x36, 3.3v I/O
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | Surface Mount | 100-LQFP | YES | - | - | Volatile | Industrial grade | -40°C~85°C TA | Tray | - | - | Active | 3 (168 Hours) | 100 | - | - | - | - | - | 8542.32.00.41 | 3.135V~3.465V | QUAD | NOT SPECIFIED | 1 | 3.3V | 0.65mm | - | NOT SPECIFIED | - | R-PQFP-G100 | - | - | 3.465V | - | 3.135V | - | - | - | 9Mb 256K x 36 | - | - | - | - | 200MHz | 3.1ns | SRAM | Parallel | - | 256KX36 | - | 36 | - | - | - | - | 9437184 bit | - | - | - | - | - | - | - | - | - | - | 1.6mm | 20mm | 14mm | - | ROHS3 Compliant | ||
| IS61NLP25636B-200TQLI |
Индекс :
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