Memory Products For Sale - PDF - Integrated Circuits (ICs) -Page4

Изображение	Тип	Марка	Объяснение	Установленная цена	Количество	RoHS	Surface Mount	Number of Terminals	Access Time-Max	Clock Frequency-Max (fCLK)	Date Of Intro	Ihs Manufacturer	Moisture Sensitivity Levels	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Rohs Code	Supply Voltage-Nom (Vsup)	JESD-609 Code	Pbfree Code	ECCN Code	Terminal Finish	Additional Feature	HTS Code	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Time@Peak Reflow Temperature-Max (s)	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Temperature Grade	Supply Voltage-Min (Vsup)	Number of Ports	Operating Mode	Supply Current-Max	Organization	Output Characteristics	Seated Height-Max	Memory Width	Standby Current-Max	Memory Density	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Serial Bus Type	Endurance	Write Cycle Time-Max (tWC)	Data Retention Time-Min	Write Protection	Standby Voltage-Min	Output Enable	Refresh Cycles	I2C Control Byte	Sequential Burst Length	Interleaved Burst Length	Access Mode	Self Refresh	Length	Width

Изображение	Тип	Марка	Объяснение	Количество	Surface Mount	Number of Terminals	Access Time-Max	Clock Frequency-Max (fCLK)	Date Of Intro	Ihs Manufacturer	Moisture Sensitivity Levels	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Rohs Code	Supply Voltage-Nom (Vsup)	JESD-609 Code	Pbfree Code	ECCN Code	Terminal Finish	Additional Feature	HTS Code	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Time@Peak Reflow Temperature-Max (s)	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Temperature Grade	Supply Voltage-Min (Vsup)	Number of Ports	Operating Mode	Supply Current-Max	Organization	Output Characteristics	Seated Height-Max	Memory Width	Standby Current-Max	Memory Density	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Serial Bus Type	Endurance	Write Cycle Time-Max (tWC)	Data Retention Time-Min	Write Protection	Standby Voltage-Min	Output Enable	Refresh Cycles	I2C Control Byte	Sequential Burst Length	Interleaved Burst Length	Access Mode	Self Refresh	Length	Width
	Mfr. Тип IS45R16160D-75CTNA2 Anlielectronics Тип	Integrated Silicon Solution Inc	Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, ROHS COMPLIANT, TSOP2-54 Сборник данных Сравнение	Min.:1 Mult.:1	YES	54	5.4 ns	133 MHz	-	INTEGRATED SILICON SOLUTION INC	-	16777216 words	16000000	105 °C	-40 °C	PLASTIC/EPOXY	TSOP2	TSOP2, TSOP54,.46,32	TSOP54,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP2	Yes	2.5 V	e4	Yes	EAR99	NICKEL PALLADIUM GOLD	AUTO/SELF REFRESH	8542.32.00.24	DUAL	GULL WING	-	1	0.8 mm	compliant	-	54	R-PDSO-G54	Not Qualified	2.7 V	INDUSTRIAL	2.3 V	1	SYNCHRONOUS	0.13 mA	16MX16	3-STATE	1.2 mm	16	0.003 A	268435456 bit	-	-	COMMON	SYNCHRONOUS DRAM	-	-	-	-	-	-	-	8192	-	1,2,4,8,FP	1,2,4,8	FOUR BANK PAGE BURST	YES	22.22 mm	10.16 mm
IS45R16160D-75CTNA2 Integrated Silicon Solution Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IS65C256AL-25TA3 Anlielectronics Тип	Integrated Silicon Solution Inc	32KX8 STANDARD SRAM, 25ns, PDSO28, PLASTIC, TSOP1-28 Сборник данных Сравнение	Min.:1 Mult.:1	YES	28	25 ns	-	-	INTEGRATED SILICON SOLUTION INC	3	32768 words	32000	125 °C	-40 °C	PLASTIC/EPOXY	TSOP1	PLASTIC, TSOP1-28	TSSOP28,.53,22	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP	No	5 V	e0	No	EAR99	TIN LEAD	-	8542.32.00.41	DUAL	GULL WING	-	1	0.55 mm	compliant	-	28	R-PDSO-G28	Not Qualified	5.5 V	AUTOMOTIVE	4.5 V	-	ASYNCHRONOUS	0.035 mA	32KX8	3-STATE	1.2 mm	8	0.00005 A	262144 bit	AEC-Q100	PARALLEL	COMMON	STANDARD SRAM	-	-	-	-	-	2 V	-	-	-	-	-	-	-	11.8 mm	8 mm
IS65C256AL-25TA3 Integrated Silicon Solution Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IS61SF12832-12TQ Anlielectronics Тип	Integrated Silicon Solution Inc	Description: Cache SRAM, 128KX32, 12ns, CMOS, PQFP100, TQFP-100 Сборник данных Сравнение	Min.:1 Mult.:1	YES	100	12 ns	-	-	INTEGRATED SILICON SOLUTION INC	-	131072 words	128000	70 °C	-	PLASTIC/EPOXY	LQFP	TQFP-100	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Obsolete	QFP	No	3.3 V	e0	No	3A991.B.2.A	TIN LEAD	INTERNAL SELF TIMED WRITE CYCLE; INDIVIDUAL BYTE WRITE CONTROL	8542.32.00.41	QUAD	GULL WING	-	1	0.65 mm	compliant	-	100	R-PQFP-G100	Not Qualified	3.63 V	COMMERCIAL	3.135 V	-	SYNCHRONOUS	0.17 mA	128KX32	3-STATE	1.6 mm	32	0.02 A	4194304 bit	-	PARALLEL	COMMON	CACHE SRAM	-	-	-	-	-	3.14 V	-	-	-	-	-	-	-	20 mm	14 mm
IS61SF12832-12TQ Integrated Silicon Solution Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IS46DR16320-37CBLA1 Anlielectronics Тип	Integrated Silicon Solution Inc	DDR DRAM, 32MX16, CMOS, PBGA84, 13 X 10.50 MM, 0.80 MM PITCH, LEAD FREE, MO-207, FBGA-84 Сборник данных Сравнение	Min.:1 Mult.:1	YES	84	-	-	-	INTEGRATED SILICON SOLUTION INC	-	33554432 words	32000000	85 °C	-40 °C	PLASTIC/EPOXY	TFBGA	TFBGA,	-	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Active	DSBGA	Yes	1.8 V	e1	Yes	EAR99	TIN SILVER COPPER	AUTO/SELF REFRESH	8542.32.00.28	BOTTOM	BALL	-	1	0.8 mm	compliant	-	84	R-PBGA-B84	Not Qualified	1.9 V	INDUSTRIAL	1.7 V	1	SYNCHRONOUS	-	32MX16	-	1.2 mm	16	-	536870912 bit	-	-	-	DDR2 DRAM	-	-	-	-	-	-	-	-	-	-	-	FOUR BANK PAGE BURST	YES	13 mm	10.5 mm
IS46DR16320-37CBLA1 Integrated Silicon Solution Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IS46LR16400C-6BLA1 Anlielectronics Тип	Integrated Silicon Solution Inc	DDR DRAM, 4MX16, 5.5ns, CMOS, PBGA60, 8 X 10 MM, LEAD FREE, MO-207, TFBGA-60 Сборник данных Сравнение	Min.:1 Mult.:1	YES	60	5.5 ns	-	-	INTEGRATED SILICON SOLUTION INC	-	4194304 words	4000000	85 °C	-40 °C	PLASTIC/EPOXY	TFBGA	TFBGA,	-	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Active	-	-	1.8 V	-	-	EAR99	-	AUTO/SELF REFRESH	8542.32.00.02	BOTTOM	BALL	NOT SPECIFIED	1	0.8 mm	unknown	NOT SPECIFIED	-	R-PBGA-B60	-	1.95 V	INDUSTRIAL	1.7 V	1	SYNCHRONOUS	-	4MX16	-	1.1 mm	16	-	67108864 bit	-	-	-	DDR1 DRAM	-	-	-	-	-	-	-	-	-	-	-	FOUR BANK PAGE BURST	YES	10 mm	8 mm
IS46LR16400C-6BLA1 Integrated Silicon Solution Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IS61NLP25636A-250TQ Anlielectronics Тип	Integrated Silicon Solution Inc	256KX36 ZBT SRAM, 2.6ns, PQFP100, TQFP-100 Сборник данных Сравнение	Min.:1 Mult.:1	YES	100	2.6 ns	250 MHz	-	INTEGRATED SILICON SOLUTION INC	-	262144 words	256000	70 °C	-	PLASTIC/EPOXY	LQFP	TQFP-100	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Obsolete	QFP	No	3.3 V	e0	No	3A991.B.2.A	TIN LEAD	PIPELINED ARCHITECTURE	8542.32.00.41	QUAD	GULL WING	-	1	0.65 mm	compliant	-	100	R-PQFP-G100	Not Qualified	3.465 V	COMMERCIAL	3.135 V	-	SYNCHRONOUS	0.28 mA	256KX36	3-STATE	1.6 mm	36	0.045 A	9437184 bit	-	PARALLEL	COMMON	ZBT SRAM	-	-	-	-	-	3.14 V	-	-	-	-	-	-	-	20 mm	14 mm
IS61NLP25636A-250TQ Integrated Silicon Solution Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IS61VPD51218A-200B2I Anlielectronics Тип	Integrated Silicon Solution Inc	Cache SRAM, 512KX18, 3.1ns, CMOS, PBGA119, 14 X 22 MM, 1MM PITCH, PLASTIC, BGA-119 Сборник данных Сравнение	Min.:1 Mult.:1	YES	119	3.1 ns	200 MHz	-	INTEGRATED SILICON SOLUTION INC	3	524288 words	512000	85 °C	-40 °C	PLASTIC/EPOXY	BGA	BGA, BGA119,7X17,50	BGA119,7X17,50	RECTANGULAR	GRID ARRAY	Active	BGA	No	2.5 V	e0	No	3A991.B.2.A	TIN LEAD	PIPELINED ARCHITECTURE	8542.32.00.41	BOTTOM	BALL	-	1	1.27 mm	compliant	-	119	R-PBGA-B119	Not Qualified	2.625 V	INDUSTRIAL	2.375 V	-	SYNCHRONOUS	0.275 mA	512KX18	3-STATE	2.41 mm	18	0.06 A	9437184 bit	-	PARALLEL	COMMON	CACHE SRAM	-	-	-	-	-	2.38 V	-	-	-	-	-	-	-	22 mm	14 mm
IS61VPD51218A-200B2I Integrated Silicon Solution Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IS61SF6436-10TQ Anlielectronics Тип	Integrated Silicon Solution Inc	Cache SRAM, 64KX36, 10ns, CMOS, PQFP100, TQFP-100 Сборник данных Сравнение	Min.:1 Mult.:1	YES	100	10 ns	66 MHz	-	INTEGRATED SILICON SOLUTION INC	-	65536 words	64000	70 °C	-	PLASTIC/EPOXY	LQFP	TQFP-100	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Obsolete	QFP	No	3.3 V	e0	-	3A991.B.2.A	Tin/Lead (Sn/Pb)	-	8542.32.00.41	QUAD	GULL WING	-	1	0.65 mm	unknown	-	100	R-PQFP-G100	Not Qualified	3.63 V	COMMERCIAL	3.135 V	1	SYNCHRONOUS	0.2 mA	64KX36	3-STATE	1.6 mm	36	0.01 A	2359296 bit	-	PARALLEL	COMMON	CACHE SRAM	-	-	-	-	-	3.14 V	YES	-	-	-	-	-	-	20 mm	14 mm
IS61SF6436-10TQ Integrated Silicon Solution Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IS61LSCS25672-250B Anlielectronics Тип	Integrated Silicon Solution Inc	Description: Standard SRAM, 256KX72, 2.1ns, CMOS, PBGA209, 14 X 22 MM, 1 MM PITCH, BGA-209 Сборник данных Сравнение	Min.:1 Mult.:1	YES	209	2.1 ns	-	-	INTEGRATED SILICON SOLUTION INC	3	262144 words	256000	70 °C	-	PLASTIC/EPOXY	BGA	14 X 22 MM, 1 MM PITCH, BGA-209	-	RECTANGULAR	GRID ARRAY	Obsolete	BGA	No	1.8 V	e0	No	3A991.B.2.A	TIN LEAD	PIPELINED ARCHITECTURE	8542.32.00.41	BOTTOM	BALL	-	1	1 mm	compliant	-	209	R-PBGA-B209	Not Qualified	1.9 V	COMMERCIAL	1.7 V	-	SYNCHRONOUS	-	256KX72	-	2.2 mm	72	-	18874368 bit	-	PARALLEL	-	STANDARD SRAM	-	-	-	-	-	-	-	-	-	-	-	-	-	22 mm	14 mm
IS61LSCS25672-250B Integrated Silicon Solution Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IS24C08-3P Anlielectronics Тип	Integrated Silicon Solution Inc	Description: EEPROM, 1KX8, Serial, CMOS, PDIP8, 0.300 INCH, PLASTIC, DIP-8 Сборник данных Сравнение	Min.:1 Mult.:1	NO	8	-	0.4 MHz	-	INTEGRATED SILICON SOLUTION INC	-	1024 words	1000	70 °C	-	PLASTIC/EPOXY	DIP	0.300 INCH, PLASTIC, DIP-8	DIP8,.3	RECTANGULAR	IN-LINE	Obsolete	DIP	No	5 V	e0	-	EAR99	TIN LEAD	ENDURANCE: 1,000,000 CYCLES, DATA RETENTION: 100 YEARS	8542.32.00.51	DUAL	THROUGH-HOLE	-	1	2.54 mm	unknown	-	8	R-PDIP-T8	Not Qualified	5.5 V	COMMERCIAL	2.5 V	-	SYNCHRONOUS	0.003 mA	1KX8	-	4.572 mm	8	0.000004 A	8192 bit	-	SERIAL	-	EEPROM	I2C	1000000 Write/Erase Cycles	5 ms	100	HARDWARE	-	-	-	1010DMMR	-	-	-	-	9.3218 mm	7.62 mm
IS24C08-3P Integrated Silicon Solution Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IC61LV5128-8K Anlielectronics Тип	Integrated Silicon Solution Inc	Standard SRAM, 512KX8, 8ns, CMOS, PDSO36, 0.400 INCH, SOJ-36 Сборник данных Сравнение	Min.:1 Mult.:1	YES	36	8 ns	-	-	INTEGRATED SILICON SOLUTION INC	-	524288 words	512000	70 °C	-	PLASTIC/EPOXY	SOJ	0.400 INCH, SOJ-36	SOJ36,.44	RECTANGULAR	SMALL OUTLINE	Obsolete	-	No	3.3 V	e0	-	3A991.B.2.A	Tin/Lead (Sn/Pb)	-	8542.32.00.41	DUAL	J BEND	-	1	1.27 mm	compliant	-	-	R-PDSO-J36	Not Qualified	3.63 V	COMMERCIAL	2.97 V	-	ASYNCHRONOUS	0.3 mA	512KX8	3-STATE	-	8	0.01 A	4194304 bit	-	PARALLEL	COMMON	STANDARD SRAM	-	-	-	-	-	3 V	-	-	-	-	-	-	-	-	-
IC61LV5128-8K Integrated Silicon Solution Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IS64NLP12836EC-250B3LA3 Anlielectronics Тип	Integrated Silicon Solution Inc	ZBT SRAM, 128KX36, 2.6ns, CMOS, PBGA165, TFBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	YES	165	2.6 ns	250 MHz	-	INTEGRATED SILICON SOLUTION INC	3	131072 words	128000	125 °C	-40 °C	PLASTIC/EPOXY	TBGA	TBGA, BGA165,11X15,40	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, THIN PROFILE	Active	BGA	Yes	3.3 V	e1	-	3A991.B.2.A	Tin/Silver/Copper (Sn/Ag/Cu)	-	8542.32.00.41	BOTTOM	BALL	260	1	1 mm	compliant	10	165	R-PBGA-B165	Not Qualified	3.465 V	AUTOMOTIVE	3.135 V	-	SYNCHRONOUS	0.285 mA	128KX36	3-STATE	1.2 mm	36	0.1 A	4718592 bit	AEC-Q100	PARALLEL	COMMON	ZBT SRAM	-	-	-	-	-	3.14 V	-	-	-	-	-	-	-	15 mm	13 mm
IS64NLP12836EC-250B3LA3 Integrated Silicon Solution Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IS46LR32400G-6BLA1 Anlielectronics Тип	Integrated Silicon Solution Inc	Description: DDR DRAM, 4MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, MO-207, TFBGA-90 Сборник данных Сравнение	Min.:1 Mult.:1	YES	90	5.5 ns	-	-	INTEGRATED SILICON SOLUTION INC	-	4194304 words	4000000	85 °C	-40 °C	PLASTIC/EPOXY	TFBGA	TFBGA,	-	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Active	-	-	1.8 V	-	-	EAR99	-	AUTO/SELF REFRESH	8542.32.00.02	BOTTOM	BALL	NOT SPECIFIED	1	0.8 mm	unknown	NOT SPECIFIED	-	R-PBGA-B90	-	1.95 V	INDUSTRIAL	1.7 V	1	SYNCHRONOUS	-	4MX32	-	1.2 mm	32	-	134217728 bit	-	-	-	DDR1 DRAM	-	-	-	-	-	-	-	-	-	-	-	FOUR BANK PAGE BURST	YES	13 mm	8 mm
IS46LR32400G-6BLA1 Integrated Silicon Solution Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IS67WVE2M16TALL-70BA1 Anlielectronics Тип	Integrated Silicon Solution Inc	Pseudo Static RAM, 2MX16, 70ns, CMOS, PBGA48, 6 X 8 MM, MO-207, TFBGA-48 Сборник данных Сравнение	Min.:1 Mult.:1	YES	48	70 ns	-	-	INTEGRATED SILICON SOLUTION INC	-	2097152 words	2000000	85 °C	-40 °C	PLASTIC/EPOXY	TFBGA	6 X 8 MM, MO-207, TFBGA-48	-	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Active	-	-	-	-	-	3A991.B.2.A	-	-	8542.32.00.41	BOTTOM	BALL	-	1	0.75 mm	unknown	-	-	R-PBGA-B48	-	1.95 V	INDUSTRIAL	1.7 V	-	ASYNCHRONOUS	-	2MX16	-	1.2 mm	16	-	33554432 bit	-	PARALLEL	-	PSEUDO STATIC RAM	-	-	-	-	-	-	-	-	-	-	-	-	-	8 mm	6 mm
IS67WVE2M16TALL-70BA1 Integrated Silicon Solution Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IS46TR16K01S2AL-15HBLA1 Anlielectronics Тип	Integrated Silicon Solution Inc	DDR DRAM, Сборник данных Сравнение	Min.:1 Mult.:1	YES	96	-	-	2018-07-17	INTEGRATED SILICON SOLUTION INC	-	1073741824 words	1000000000	95 °C	-40 °C	PLASTIC/EPOXY	LFBGA	LFBGA,	-	RECTANGULAR	GRID ARRAY, LOW PROFILE, FINE PITCH	Active	-	-	1.35 V	-	-	EAR99	-	AUTO/SELF REFRESH	8542.32.00.36	BOTTOM	BALL	-	1	0.8 mm	compliant	-	-	R-PBGA-B96	-	1.45 V	INDUSTRIAL	1.283 V	1	SYNCHRONOUS	-	1GX16	-	1.4 mm	16	-	17179869184 bit	-	-	-	DDR DRAM	-	-	-	-	-	-	-	-	-	-	-	DUAL BANK PAGE BURST	YES	14 mm	10 mm
IS46TR16K01S2AL-15HBLA1 Integrated Silicon Solution Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IS46LD16160A-25BLA2 Anlielectronics Тип	Integrated Silicon Solution Inc	Description: DDR DRAM, 16MX16, CMOS, PBGA134, TFBGA-134 Сборник данных Сравнение	Min.:1 Mult.:1	YES	134	-	-	-	INTEGRATED SILICON SOLUTION INC	-	16777216 words	16000000	-	-	PLASTIC/EPOXY	TFBGA	TFBGA,	-	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Not Recommended	-	Yes	1.2 V	e1	-	EAR99	Tin/Silver/Copper (Sn/Ag/Cu)	SELF CONTAINED REFRESH; ALSO REQUIRES 1.8 V SUPPLY	8542.32.00.24	BOTTOM	BALL	260	1	0.65 mm	compliant	10	-	R-PBGA-B134	-	1.3 V	-	1.14 V	1	SYNCHRONOUS	-	16MX16	-	1.1 mm	16	-	268435456 bit	-	-	-	DDR2 DRAM	-	-	-	-	-	-	-	-	-	-	-	FOUR BANK PAGE BURST	YES	11.5 mm	10 mm
IS46LD16160A-25BLA2 Integrated Silicon Solution Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IS61VF204836B-7.5M3LI Anlielectronics Тип	Integrated Silicon Solution Inc	Description: Cache SRAM, 2MX36, 7.5ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, LEAD FREE, PLASTIC, LFBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	YES	165	7.5 ns	117 MHz	-	INTEGRATED SILICON SOLUTION INC	-	2097152 words	2000000	85 °C	-40 °C	PLASTIC/EPOXY	LBGA	LBGA, BGA165,11X15,40	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	Yes	2.5 V	-	-	3A991.B.2.A	-	-	8542.32.00.41	BOTTOM	BALL	-	1	1 mm	compliant	-	165	R-PBGA-B165	Not Qualified	2.625 V	INDUSTRIAL	2.375 V	-	SYNCHRONOUS	-	2MX36	3-STATE	1.4 mm	36	-	75497472 bit	-	PARALLEL	COMMON	CACHE SRAM	-	-	-	-	-	2.38 V	-	-	-	-	-	-	-	17 mm	15 mm
IS61VF204836B-7.5M3LI Integrated Silicon Solution Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IS61DDP2B22M18A-550B4L Anlielectronics Тип	Integrated Silicon Solution Inc	Description: DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, LFBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	YES	165	0.45 ns	-	-	INTEGRATED SILICON SOLUTION INC	-	2097152 words	2000000	70 °C	-	PLASTIC/EPOXY	LBGA	LBGA,	-	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	-	1.8 V	-	-	3A991.B.2.A	-	-	8542.32.00.41	BOTTOM	BALL	-	1	1 mm	compliant	-	165	R-PBGA-B165	-	1.89 V	COMMERCIAL	1.71 V	-	SYNCHRONOUS	-	2MX18	-	1.4 mm	18	-	37748736 bit	-	PARALLEL	-	DDR SRAM	-	-	-	-	-	-	-	-	-	-	-	-	-	15 mm	13 mm
IS61DDP2B22M18A-550B4L Integrated Silicon Solution Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IS61NLP25618A-250TQ Anlielectronics Тип	Integrated Silicon Solution Inc	256KX18 ZBT SRAM, 2.6ns, PQFP100, TQFP-100 Сборник данных Сравнение	Min.:1 Mult.:1	YES	100	2.6 ns	250 MHz	-	INTEGRATED SILICON SOLUTION INC	-	262144 words	256000	70 °C	-	PLASTIC/EPOXY	LQFP	TQFP-100	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Obsolete	QFP	No	3.3 V	e0	No	3A991.B.2.A	TIN LEAD	PIPELINED ARCHITECTURE	8542.32.00.41	QUAD	GULL WING	-	1	0.65 mm	compliant	-	100	R-PQFP-G100	Not Qualified	3.465 V	COMMERCIAL	3.135 V	-	SYNCHRONOUS	0.225 mA	256KX18	3-STATE	1.6 mm	18	0.03 A	4718592 bit	-	PARALLEL	COMMON	ZBT SRAM	-	-	-	-	-	3.14 V	-	-	-	-	-	-	-	20 mm	14 mm
IS61NLP25618A-250TQ Integrated Silicon Solution Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IS64WV5128BLL-10BA3 Anlielectronics Тип	Integrated Silicon Solution Inc	Standard SRAM, 512KX8, 10ns, CMOS, PBGA36, 6 X 8 MM, MINI, BGA-36 Сборник данных Сравнение	Min.:1 Mult.:1	YES	36	10 ns	-	-	INTEGRATED SILICON SOLUTION INC	3	524288 words	512000	125 °C	-40 °C	PLASTIC/EPOXY	TFBGA	TFBGA, BGA36,6X8,30	BGA36,6X8,30	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Active	BGA	No	3 V	e0	No	3A991.B.2.A	TIN LEAD	-	8542.32.00.41	BOTTOM	BALL	-	1	0.75 mm	compliant	-	36	R-PBGA-B36	Not Qualified	3.6 V	AUTOMOTIVE	2.4 V	-	ASYNCHRONOUS	0.065 mA	512KX8	3-STATE	1.2 mm	8	0.015 A	4194304 bit	AEC-Q100	PARALLEL	COMMON	STANDARD SRAM	-	-	-	-	-	2 V	-	-	-	-	-	-	-	8 mm	6 mm
IS64WV5128BLL-10BA3 Integrated Silicon Solution Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -

Integrated Circuits (ICs)

Memory definition: Memory is a component used to store programs and various data information. A memory cell is actually a type of sequential logic circuit. A m... Memory Product Listing: IS45R16160D-75CTNA2,IS65C256AL-25TA3,IS61SF12832-12TQ,IS46DR16320-37CBLA1,IS46LR16400C-6BLA1.Integrated Circuits (ICs) type:Embedded - Microcontrollers(129432),Memory(111901),PMIC - Supervisors(101743),PMIC - Voltage Regulators - Linear(101187),PMIC - Voltage Regulators - DC DC Switching Regulators(62822) .Memory has 444 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.

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