| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Surface Mount | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Ihs Manufacturer | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | Supply Voltage-Nom (Vsup) | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Temperature Grade | Supply Voltage-Min (Vsup) | Number of Ports | Operating Mode | Supply Current-Max | Organization | Output Characteristics | Seated Height-Max | Memory Width | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Memory IC Type | Standby Voltage-Min | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Access Mode | Self Refresh | Length | Width |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | Mfr. ТипIS43LD32800B-25BPLIAnlielectronics Тип | Integrated Silicon Solution Inc |
-
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| IS43LD32800B-25BPLI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIS62LV256AL-20TLAnlielectronics Тип | Integrated Silicon Solution Inc |
Description: Standard SRAM, 32KX8, 20ns, CMOS, PDSO28, 0.450 MM, LEAD FREE, PLASTIC, TSOP1-28
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 28 | 20 ns | - | INTEGRATED SILICON SOLUTION INC | - | 32768 words | 32000 | 70 °C | - | PLASTIC/EPOXY | TSOP1 | TSOP1, TSSOP28,.53,22 | TSSOP28,.53,22 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Active | TSOP | Yes | 3.3 V | e3 | Yes | EAR99 | MATTE TIN | - | 8542.32.00.41 | DUAL | GULL WING | 260 | 1 | 0.55 mm | compliant | 10 | 28 | R-PDSO-G28 | Not Qualified | 3.63 V | COMMERCIAL | 2.97 V | - | ASYNCHRONOUS | 0.02 mA | 32KX8 | 3-STATE | 1.2 mm | 8 | 0.000015 A | 262144 bit | - | PARALLEL | COMMON | STANDARD SRAM | 2 V | - | - | - | - | - | 11.8 mm | 8 mm | ||
| IS62LV256AL-20TL | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIS64NVP102436B-166B3LA3Anlielectronics Тип | Integrated Silicon Solution Inc |
ZBT SRAM, 1MX36, 3.5ns, CMOS, PBGA165, 15 X 13 MM, 1 MM PITCH, LEAD FREE, PLASTIC, TFBGA-165
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 165 | 3.5 ns | 166 MHz | INTEGRATED SILICON SOLUTION INC | - | 1048576 words | 1000000 | 125 °C | -40 °C | PLASTIC/EPOXY | TBGA | TBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, THIN PROFILE | Active | BGA | Yes | 2.5 V | - | - | 3A991.B.2.A | - | - | 8542.32.00.41 | BOTTOM | BALL | - | 1 | 1 mm | compliant | - | 165 | R-PBGA-B165 | Not Qualified | 2.625 V | AUTOMOTIVE | 2.375 V | - | SYNCHRONOUS | - | 1MX36 | 3-STATE | 1.2 mm | 36 | - | 37748736 bit | AEC-Q100 | PARALLEL | COMMON | ZBT SRAM | 2.38 V | - | - | - | - | - | 15 mm | 13 mm | ||
| IS64NVP102436B-166B3LA3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIS62WV5128ECLL-35BLIAnlielectronics Тип | Integrated Silicon Solution Inc |
Standard SRAM, 512KX8, 35ns, CMOS, PBGA36, 6 X 8 MM, LEAD FREE, MO-207, TFBGA-36
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 36 | 35 ns | - | INTEGRATED SILICON SOLUTION INC | - | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, | - | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Active | - | - | 3.3 V | - | - | 3A991.B.2.A | - | - | 8542.32.00.41 | BOTTOM | BALL | - | 1 | 0.75 mm | unknown | - | - | R-PBGA-B36 | - | 3.465 V | INDUSTRIAL | 3.135 V | - | ASYNCHRONOUS | - | 512KX8 | - | 1.2 mm | 8 | - | 4194304 bit | - | PARALLEL | - | STANDARD SRAM | - | - | - | - | - | - | 8 mm | 6 mm | ||
| IS62WV5128ECLL-35BLI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIS42S16100F-5BLAnlielectronics Тип | Integrated Silicon Solution Inc |
Description: Synchronous DRAM, 1MX16, 5ns, CMOS, PBGA60, 10.10 X 6.40 MM, 0.65 MM PITCH, LEAD FREE, TFBGA-60
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 60 | 5 ns | 200 MHz | INTEGRATED SILICON SOLUTION INC | 3 | 1048576 words | 1000000 | 70 °C | - | PLASTIC/EPOXY | TFBGA | TFBGA, BGA60,7X15,25 | BGA60,7X15,25 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | Yes | 3.3 V | e1 | Yes | EAR99 | TIN SILVER COPPER | AUTO/SELF REFRESH | 8542.32.00.02 | BOTTOM | BALL | - | 1 | 0.65 mm | compliant | - | 60 | R-PBGA-B60 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | 1 | SYNCHRONOUS | 0.12 mA | 1MX16 | 3-STATE | 1.2 mm | 16 | 0.002 A | 16777216 bit | - | - | COMMON | SYNCHRONOUS DRAM | - | 2048 | 1,2,4,8,FP | 1,2,4,8 | DUAL BANK PAGE BURST | YES | 10.1 mm | 6.4 mm | ||
| IS42S16100F-5BL | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIS45VS16400L-75BLA2Anlielectronics Тип | Integrated Silicon Solution Inc |
Synchronous DRAM, 4MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-54
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 54 | 5.4 ns | - | INTEGRATED SILICON SOLUTION INC | - | 4194304 words | 4000000 | 105 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, | - | SQUARE | GRID ARRAY, THIN PROFILE, FINE PITCH | Active | BGA | - | 1.8 V | - | - | EAR99 | - | AUTO/SELF REFRESH | 8542.32.00.02 | BOTTOM | BALL | - | 1 | 0.8 mm | compliant | - | 54 | S-PBGA-B54 | - | 1.95 V | INDUSTRIAL | 1.7 V | 1 | SYNCHRONOUS | - | 4MX16 | - | 1.2 mm | 16 | - | 67108864 bit | - | - | - | SYNCHRONOUS DRAM | - | - | - | - | FOUR BANK PAGE BURST | YES | 8 mm | 8 mm | ||
| IS45VS16400L-75BLA2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIS61NLP25636A-250B3Anlielectronics Тип | Integrated Silicon Solution Inc |
ZBT SRAM, 256KX36, 2.6ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, PLASTIC, BGA-165
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 165 | 2.6 ns | 250 MHz | INTEGRATED SILICON SOLUTION INC | - | 262144 words | 256000 | 70 °C | - | PLASTIC/EPOXY | TBGA | TBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, THIN PROFILE | Active | BGA | No | 3.3 V | e0 | No | 3A991.B.2.A | TIN LEAD | PIPELINED ARCHITECTURE | 8542.32.00.41 | BOTTOM | BALL | - | 1 | 1 mm | compliant | - | 165 | R-PBGA-B165 | Not Qualified | 3.465 V | COMMERCIAL | 3.135 V | - | SYNCHRONOUS | 0.28 mA | 256KX36 | 3-STATE | 1.2 mm | 36 | 0.045 A | 9437184 bit | - | PARALLEL | COMMON | ZBT SRAM | 3.14 V | - | - | - | - | - | 15 mm | 13 mm | ||
| IS61NLP25636A-250B3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIS42R16320D-6TLIAnlielectronics Тип | Integrated Silicon Solution Inc |
Synchronous DRAM, 32MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSSOP2, 54 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 54 | 5.4 ns | 166 MHz | INTEGRATED SILICON SOLUTION INC | - | 33554432 words | 32000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP54,.46,32 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSSOP | Yes | 2.5 V | - | - | EAR99 | - | AUTO/SELF REFRESH | 8542.32.00.28 | DUAL | GULL WING | - | 1 | 0.8 mm | compliant | - | 54 | R-PDSO-G54 | Not Qualified | 2.7 V | INDUSTRIAL | 2.3 V | 1 | SYNCHRONOUS | 0.25 mA | 32MX16 | 3-STATE | 1.2 mm | 16 | 0.004 A | 536870912 bit | - | - | COMMON | SYNCHRONOUS DRAM | - | 8192 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 22.22 mm | 10.16 mm | ||
| IS42R16320D-6TLI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIS49NLC18160-25WBLAnlielectronics Тип | Integrated Silicon Solution Inc |
DDR DRAM, 16MX18, CMOS, PBGA144, WBGA-144
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 144 | - | 400 MHz | INTEGRATED SILICON SOLUTION INC | - | 16777216 words | 16000000 | 70 °C | - | PLASTIC/EPOXY | TFBGA | TBGA, | BGA144,12X18,40/32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | - | - | 1.8 V | - | - | EAR99 | - | - | 8542.32.00.28 | BOTTOM | BALL | - | 1 | 1 mm | unknown | - | - | R-PBGA-B144 | - | 1.9 V | COMMERCIAL | 1.7 V | 1 | SYNCHRONOUS | 0.97 mA | 16MX18 | 3-STATE | 1.2 mm | 18 | 0.048 A | 301989888 bit | - | - | COMMON | DDR1 DRAM | - | - | 2,4,8 | - | MULTI BANK PAGE BURST | YES | 18.5 mm | 11 mm | ||
| IS49NLC18160-25WBL | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIS64VF12836EC-7.5B3LA3Anlielectronics Тип | Integrated Silicon Solution Inc |
Cache SRAM, 128KX36, 7.5ns, CMOS, PBGA165, TFBGA-165
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 165 | 7.5 ns | 117 MHz | INTEGRATED SILICON SOLUTION INC | 3 | 131072 words | 128000 | 125 °C | -40 °C | PLASTIC/EPOXY | TBGA | TBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, THIN PROFILE | Active | BGA | Yes | 2.5 V | e1 | - | 3A991.B.2.A | Tin/Silver/Copper (Sn/Ag/Cu) | - | 8542.32.00.41 | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 10 | 165 | R-PBGA-B165 | Not Qualified | 2.625 V | AUTOMOTIVE | 2.375 V | - | SYNCHRONOUS | 0.185 mA | 128KX36 | 3-STATE | 1.2 mm | 36 | 0.1 A | 4718592 bit | AEC-Q100 | PARALLEL | COMMON | CACHE SRAM | 2.38 V | - | - | - | - | - | 15 mm | 13 mm | ||
| IS64VF12836EC-7.5B3LA3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIS43DR16320-37CBLIAnlielectronics Тип | Integrated Silicon Solution Inc |
Description: DDR DRAM, 32MX16, CMOS, PBGA84, 13 X 10.50 MM, 0.80 MM PITCH, LEAD FREE, MO-207, FBGA-84
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 84 | - | - | INTEGRATED SILICON SOLUTION INC | - | 33554432 words | 32000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, | - | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Active | DSBGA | Yes | 1.8 V | e1 | Yes | EAR99 | TIN SILVER COPPER | AUTO/SELF REFRESH | 8542.32.00.28 | BOTTOM | BALL | - | 1 | 0.8 mm | compliant | - | 84 | R-PBGA-B84 | Not Qualified | 1.9 V | INDUSTRIAL | 1.7 V | 1 | SYNCHRONOUS | - | 32MX16 | - | 1.2 mm | 16 | - | 536870912 bit | - | - | - | DDR2 DRAM | - | - | - | - | FOUR BANK PAGE BURST | YES | 13 mm | 10.5 mm | ||
| IS43DR16320-37CBLI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIS42R32160D-7BLIAnlielectronics Тип | Integrated Silicon Solution Inc |
Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MMM, PITCH, LEAD FREE, MO-207, FBGA-90
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 90 | 5.4 ns | 143 MHz | INTEGRATED SILICON SOLUTION INC | - | 16777216 words | 16000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA90,9X15,32 | BGA90,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Active | DSBGA | Yes | 2.5 V | - | - | EAR99 | - | AUTO/SELF REFRESH | 8542.32.00.28 | BOTTOM | BALL | - | 1 | 0.8 mm | compliant | - | 90 | R-PBGA-B90 | Not Qualified | 2.7 V | INDUSTRIAL | 2.3 V | 1 | SYNCHRONOUS | 0.3 mA | 16MX32 | 3-STATE | 1.2 mm | 32 | 0.004 A | 536870912 bit | - | - | COMMON | SYNCHRONOUS DRAM | - | 8192 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 13 mm | 8 mm | ||
| IS42R32160D-7BLI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIS42S81600E-5TLIAnlielectronics Тип | Integrated Silicon Solution Inc |
Description: Synchronous DRAM, 16MX8, 5ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 54 | 5 ns | 200 MHz | INTEGRATED SILICON SOLUTION INC | - | 16777216 words | 16000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP54,.46,32 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | Yes | 3.3 V | e3 | Yes | EAR99 | MATTE TIN | AUTO/SELF REFRESH | 8542.32.00.02 | DUAL | GULL WING | 260 | 1 | 0.8 mm | compliant | 10 | 54 | R-PDSO-G54 | Not Qualified | 3.6 V | INDUSTRIAL | 3 V | 1 | SYNCHRONOUS | 0.2 mA | 16MX8 | 3-STATE | 1.2 mm | 8 | 0.002 A | 134217728 bit | - | - | COMMON | SYNCHRONOUS DRAM | - | 4096 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 22.22 mm | 10.16 mm | ||
| IS42S81600E-5TLI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIS49NLC18320-25WBLAnlielectronics Тип | Integrated Silicon Solution Inc |
Description: DDR DRAM, 32MX18, CMOS, PBGA144, WBGA-144
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 144 | - | - | INTEGRATED SILICON SOLUTION INC | - | 33554432 words | 32000000 | 70 °C | - | PLASTIC/EPOXY | TBGA | TBGA, | - | RECTANGULAR | GRID ARRAY, THIN PROFILE | Active | - | - | 1.8 V | - | - | EAR99 | - | AUTO REFRESH | 8542.32.00.32 | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | unknown | NOT SPECIFIED | - | R-PBGA-B144 | - | 1.9 V | COMMERCIAL | 1.7 V | 1 | SYNCHRONOUS | - | 32MX18 | - | 1.2 mm | 18 | - | 603979776 bit | - | - | - | DDR DRAM | - | - | - | - | MULTI BANK PAGE BURST | - | 18.5 mm | 11 mm | ||
| IS49NLC18320-25WBL | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIC62C1024L-70WAnlielectronics Тип | Integrated Silicon Solution Inc |
Standard SRAM, 128KX8, 70ns, CMOS, PDIP32, 0.600 INCH, DIP-32
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 32 | 70 ns | - | INTEGRATED SILICON SOLUTION INC | - | 131072 words | 128000 | 70 °C | - | PLASTIC/EPOXY | DIP | 0.600 INCH, DIP-32 | DIP32,.6 | RECTANGULAR | IN-LINE | Obsolete | - | No | 5 V | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | - | 8542.32.00.41 | DUAL | THROUGH-HOLE | - | 1 | 2.54 mm | compliant | - | - | R-PDIP-T32 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | - | ASYNCHRONOUS | 0.07 mA | 128KX8 | 3-STATE | - | 8 | - | 1048576 bit | - | PARALLEL | COMMON | STANDARD SRAM | 2 V | - | - | - | - | - | - | - | ||
| IC62C1024L-70W | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIS42VM32800D-12BLIAnlielectronics Тип | Integrated Silicon Solution Inc |
Synchronous DRAM, 8MX32, 10ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-90
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 90 | 10 ns | - | INTEGRATED SILICON SOLUTION INC | - | 8388608 words | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, | - | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | - | 1.8 V | - | - | EAR99 | - | AUTO/SELF REFRESH | 8542.32.00.24 | BOTTOM | BALL | - | 1 | 0.8 mm | compliant | - | 90 | R-PBGA-B90 | - | 1.95 V | INDUSTRIAL | 1.7 V | 1 | SYNCHRONOUS | - | 8MX32 | - | 1.2 mm | 32 | - | 268435456 bit | - | - | - | SYNCHRONOUS DRAM | - | - | - | - | FOUR BANK PAGE BURST | YES | 13 mm | 8 mm | ||
| IS42VM32800D-12BLI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIS64VVPS409618B-200TQ2LA3Anlielectronics Тип | Integrated Silicon Solution Inc |
Standard SRAM, 4MX18, 3.1ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, LEAD FREE, LQFP-100
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 100 | 3.1 ns | - | INTEGRATED SILICON SOLUTION INC | - | 4194304 words | 4000000 | 125 °C | -40 °C | PLASTIC/EPOXY | LQFP | LQFP, | - | RECTANGULAR | FLATPACK, LOW PROFILE | Active | - | Yes | 1.8 V | e3 | - | 3A991.B.2.A | Matte Tin (Sn) | - | 8542.32.00.41 | QUAD | GULL WING | 260 | 1 | 0.65 mm | compliant | 10 | - | R-PQFP-G100 | - | 1.89 V | AUTOMOTIVE | 1.71 V | - | SYNCHRONOUS | - | 4MX18 | - | 1.6 mm | 18 | - | 75497472 bit | - | PARALLEL | - | STANDARD SRAM | - | - | - | - | - | - | 20 mm | 14 mm | ||
| IS64VVPS409618B-200TQ2LA3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIS45S81600B-7TAAnlielectronics Тип | Integrated Silicon Solution Inc |
Synchronous DRAM, 16MX8, 5.4ns, CMOS, PDSO54, PLASTIC, TSOP2-54
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 54 | 5.4 ns | 143 MHz | INTEGRATED SILICON SOLUTION INC | 3 | 16777216 words | 16000000 | 70 °C | - | PLASTIC/EPOXY | TSOP2 | PLASTIC, TSOP2-54 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | No | 3.3 V | e0 | - | EAR99 | TIN LEAD | AUTO/SELF REFRESH | 8542.32.00.02 | DUAL | GULL WING | - | 1 | 0.8 mm | unknown | - | 54 | R-PDSO-G54 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | 1 | SYNCHRONOUS | 0.16 mA | 16MX8 | 3-STATE | 1.2 mm | 8 | 0.001 A | 134217728 bit | - | - | COMMON | SYNCHRONOUS DRAM | - | 4096 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 22.22 mm | 10.16 mm | ||
| IS45S81600B-7TA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIS49NLC36160-25EWBLIAnlielectronics Тип | Integrated Silicon Solution Inc |
DDR DRAM, 16MX36, CMOS, PBGA144, WBGA-144
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 144 | - | - | INTEGRATED SILICON SOLUTION INC | - | 16777216 words | 16000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TBGA | TBGA, | - | RECTANGULAR | GRID ARRAY, THIN PROFILE | Active | - | - | 1.8 V | - | - | EAR99 | - | AUTO REFRESH | 8542.32.00.32 | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | unknown | NOT SPECIFIED | - | R-PBGA-B144 | - | 1.9 V | INDUSTRIAL | 1.7 V | 1 | SYNCHRONOUS | - | 16MX36 | - | 1.2 mm | 36 | - | 603979776 bit | - | - | - | DDR DRAM | - | - | - | - | MULTI BANK PAGE BURST | - | 18.5 mm | 11 mm | ||
| IS49NLC36160-25EWBLI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIS64VLPS409618B-166B2LA3Anlielectronics Тип | Integrated Silicon Solution Inc |
Cache SRAM, 4MX18, 3.5ns, CMOS, PBGA119, 14 X 22 MM, 1 MM PITCH, LEAD FREE, PLASTIC, MS-028, BGA-119
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 119 | 3.5 ns | 166 MHz | INTEGRATED SILICON SOLUTION INC | - | 4194304 words | 4000000 | 125 °C | -40 °C | PLASTIC/EPOXY | BGA | BGA, BGA119,7X17,50 | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | Obsolete | BGA | Yes | 2.5 V | - | - | 3A991.B.2.A | - | - | 8542.32.00.41 | BOTTOM | BALL | - | 1 | 1.27 mm | compliant | - | 119 | R-PBGA-B119 | Not Qualified | 2.625 V | AUTOMOTIVE | 2.375 V | - | SYNCHRONOUS | - | 4MX18 | 3-STATE | 3.5 mm | 18 | - | 75497472 bit | AEC-Q100 | PARALLEL | COMMON | CACHE SRAM | 3.14 V | - | - | - | - | - | 22 mm | 14 mm | ||
| IS64VLPS409618B-166B2LA3 |
Индекс :
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