| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Contact Plating | Mount | Mounting Type | Package / Case | Surface Mount | Number of Pins | Supplier Device Package | Memory Types | Operating Temperature | Packaging | Published | Series | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Voltage - Supply | Terminal Position | Peak Reflow Temperature (Cel) | Number of Functions | Supply Voltage | Terminal Pitch | Reach Compliance Code | Frequency | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Supply Voltage-Min (Vsup) | Interface | Max Supply Voltage | Min Supply Voltage | Memory Size | Operating Supply Current | Operating Mode | Access Time | Memory Format | Memory Interface | Data Bus Width | Organization | Memory Width | Write Cycle Time - Word, Page | Address Bus Width | Density | Standby Current-Max | Memory Density | Access Time (Max) | I/O Type | Endurance | Data Retention Time-Min | Max Junction Temperature (Tj) | Height | Height Seated (Max) | Length | Width | Radiation Hardening | REACH SVHC | RoHS Status | Lead Free |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипDS2502X1Anlielectronics Тип | Maxim Integrated |
IC OTP 1KBIT 1WIRE 4WLP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | Surface Mount | 4-UFBGA, WLBGA | YES | 4 | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2003 | - | - | - | Obsolete | 1 (Unlimited) | 4 | - | - | - | - | - | - | - | 2.8V~6V | - | - | - | - | - | - | - | - | DS2502 | - | - | - | - | - | 3/5V | - | Serial | - | - | 1Kb 128 x 8 | 5μA | - | - | EPROM | 1-Wire® | - | 128X8 | 8 | - | - | 1 kb | - | - | 15000 ns | COMMON | - | - | - | - | - | - | - | No | - | Non-RoHS Compliant | Contains Lead | ||
| DS2502X1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипDS1245AB-70+Anlielectronics Тип | Maxim Integrated |
IC NVSRAM 1M PARALLEL 32EDIP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 9 Weeks | - | - | Through Hole | 32-DIP Module (0.600, 15.24mm) | NO | 32 | - | Non-Volatile | 0°C~70°C TA | Tube | 2004 | - | e3 | yes | Active | 1 (Unlimited) | 32 | - | 3A991.B.2.A | MATTE TIN | - | - | - | 8473.30.11.40 | 4.75V~5.25V | DUAL | NOT SPECIFIED | 1 | 5V | 2.54mm | not_compliant | - | NOT SPECIFIED | DS1245AB | 32 | - | Not Qualified | - | 5.25V | 5V | 4.75V | - | - | - | 1Mb 128K x 8 | - | ASYNCHRONOUS | - | NVSRAM | Parallel | - | 128KX8 | 8 | 70ns | - | - | 0.0006A | 1048576 bit | 70 ns | - | - | - | - | - | 10.922mm | 43.053mm | 15.24mm | - | - | ROHS3 Compliant | Lead Free | ||
| DS1245AB-70+ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипDS1258AB-70Anlielectronics Тип | Maxim Integrated |
IC NVSRAM 2M PARALLEL 40EDIP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | Through Hole | 40-DIP Module (0.610, 15.495mm) | NO | 40 | - | Non-Volatile | 0°C~70°C TA | Tube | 2006 | - | e0 | no | Obsolete | 1 (Unlimited) | 40 | - | 3A991.B.2.A | Tin/Lead (Sn/Pb) | - | - | 10 YEAR DATA RETENTION | 8542.32.00.41 | 4.75V~5.25V | DUAL | NOT SPECIFIED | 1 | 5V | 2.54mm | not_compliant | 70GHz | NOT SPECIFIED | DS1258AB | 40 | - | Not Qualified | - | 5.25V | 5V | 4.75V | - | - | - | 2Mb 128K x 16 | - | ASYNCHRONOUS | - | NVSRAM | Parallel | 16b | 128KX16 | 16 | 70ns | - | - | 0.01A | 2097152 bit | 70 ns | - | - | - | - | - | - | - | - | - | - | Non-RoHS Compliant | Contains Lead | ||
| DS1258AB-70 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипDS1230W-150+Anlielectronics Тип | Maxim Integrated |
IC NVSRAM 256K PARALLEL 28EDIP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | - | Through Hole | 28-DIP Module (0.600, 15.24mm) | NO | 28 | - | Non-Volatile | 0°C~70°C TA | Tube | 2004 | - | e3 | yes | Active | 1 (Unlimited) | 28 | - | EAR99 | MATTE TIN | - | - | 10 YEAR DATA RETENTION | 8473.30.11.40 | 3V~3.6V | DUAL | - | 1 | 3.3V | 2.54mm | - | 150GHz | - | DS1230W | 28 | - | - | 3.3V | 3.6V | - | 3V | - | - | - | 256Kb 32K x 8 | 50mA | - | - | NVSRAM | Parallel | 8b | 256KX8 | 8 | 150ns | - | 256 kb | 0.00025A | - | 150 ns | - | - | - | - | - | 10.668mm | 38.225mm | - | No | - | ROHS3 Compliant | Lead Free | ||
| DS1230W-150+ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипDS2431G+UAnlielectronics Тип | Maxim Integrated |
IC EEPROM 1KBIT 1WIRE 2SFN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Tin | Surface Mount | Surface Mount | 2-SFN | - | 2 | - | Non-Volatile | -40°C~85°C TA | Strip | 2003 | - | e3 | yes | Active | 1 (Unlimited) | 2 | - | EAR99 | - | - | - | - | - | - | BOTTOM | 225 | 1 | - | - | - | - | - | DS2431 | - | - | - | - | - | 3/5V | - | Serial | 5.25V | 2.8V | 1Kb 256 x 4 | - | - | 2μs | EEPROM | 1-Wire® | - | 1KX1 | 1 | - | - | 1 kb | - | - | - | - | 50000 Write/Erase Cycles | 40 | - | - | 1mm | 6mm | 6mm | No | Unknown | ROHS3 Compliant | - | ||
| DS2431G+U | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипDS1245W-100+Anlielectronics Тип | Maxim Integrated |
IC NVSRAM 1M PARALLEL 32EDIP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 11 Weeks | Tin | Through Hole | Through Hole | 32-DIP Module (0.600, 15.24mm) | - | 32 | - | Non-Volatile | 0°C~70°C TA | Tube | 2004 | - | e3 | yes | Active | 1 (Unlimited) | 32 | - | 3A991.B.2.A | - | - | - | 10 YEAR DATA RETENTION | 8473.30.11.40 | 3V~3.6V | DUAL | - | 1 | 3.3V | 2.54mm | - | 100GHz | - | DS1245W | 32 | - | - | 3.3V | 3.6V | - | 3V | - | - | - | 1Mb 128K x 8 | 50mA | - | - | NVSRAM | Parallel | 8b | 128KX8 | 8 | 100ns | - | 1 Mb | 0.00025A | - | 100 ns | - | - | - | - | - | - | - | - | No | Unknown | ROHS3 Compliant | Lead Free | ||
| DS1245W-100+ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипDS1220AD-120+Anlielectronics Тип | Maxim Integrated |
IC NVSRAM 16K PARALLEL 24EDIP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | - | Through Hole | Through Hole | 24-DIP Module (0.600, 15.24mm) | - | 24 | - | Non-Volatile | 0°C~70°C TA | Tube | 2004 | - | e3 | yes | Active | 1 (Unlimited) | 24 | - | EAR99 | MATTE TIN | - | - | - | 8473.30.11.40 | 4.5V~5.5V | DUAL | - | 1 | 5V | 2.54mm | - | 120GHz | - | DS1220A | 24 | - | - | 5V | - | 5V | - | - | - | - | 16Kb 2K x 8 | 75mA | - | - | NVSRAM | Parallel | 8b | 2KX8 | - | 120ns | 8b | 16 kb | 0.01A | - | 120 ns | - | - | - | - | 10.67mm | - | 38.1mm | 18.29mm | No | Unknown | ROHS3 Compliant | Lead Free | ||
| DS1220AD-120+ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипDS2430AP+Anlielectronics Тип | Maxim Integrated |
IC EEPROM 256 1WIRE 6TSOC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Tin | Surface Mount | Surface Mount | 6-LSOJ (0.148, 3.76mm Width) | - | 6 | 6-TSOC | Non-Volatile | -40°C~85°C TA | Tube | 2003 | - | - | - | Active | 1 (Unlimited) | - | SMD/SMT | - | - | 85°C | -40°C | - | - | - | - | - | - | - | - | - | - | - | DS2430A | - | - | - | 5V | - | - | - | Serial | 5.25V | 2.8V | 256b 32 x 8 | - | - | 15μs | EEPROM | 1-Wire® | - | - | - | - | - | 256 b | - | - | - | - | - | - | - | 1.49mm | - | 3.94mm | 3.81mm | No | Unknown | ROHS3 Compliant | Lead Free | ||
| DS2430AP+ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипDS1220AD-100+Anlielectronics Тип | Maxim Integrated |
IC NVSRAM 16K PARALLEL 24EDIP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | - | - | Through Hole | 24-DIP Module (0.600, 15.24mm) | NO | 24 | - | Non-Volatile | 0°C~70°C TA | Tube | 2004 | - | e3 | yes | Active | 1 (Unlimited) | 24 | - | EAR99 | Matte Tin (Sn) | - | - | - | 8473.30.11.40 | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 2.54mm | not_compliant | - | 30 | DS1220A | 24 | - | Not Qualified | - | 5.5V | 5V | 4.5V | - | - | - | 16Kb 2K x 8 | - | ASYNCHRONOUS | - | NVSRAM | Parallel | - | 2KX8 | 8 | 100ns | - | - | 0.01A | 16384 bit | 100 ns | - | - | - | - | - | 10.668mm | 33.02mm | - | - | - | ROHS3 Compliant | Lead Free | ||
| DS1220AD-100+ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипDS1250W-150+Anlielectronics Тип | Maxim Integrated |
IC NVSRAM 4M PARALLEL 32EDIP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | - | - | Through Hole | 32-DIP Module (0.600, 15.24mm) | NO | - | - | Non-Volatile | 0°C~70°C TA | Tube | 2004 | - | e3 | yes | Active | 1 (Unlimited) | 32 | - | 3A991.B.2.A | MATTE TIN | - | - | - | 8473.30.11.40 | 3V~3.6V | DUAL | NOT SPECIFIED | 1 | 3.3V | 2.54mm | not_compliant | - | NOT SPECIFIED | DS1250W | 32 | R-XDMA-P32 | Not Qualified | - | 3.6V | 3.3V | 3V | - | - | - | 4Mb 512K x 8 | - | ASYNCHRONOUS | - | NVSRAM | Parallel | - | 512KX8 | 8 | 150ns | - | - | 0.00025A | 4194304 bit | 150 ns | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | Lead Free | ||
| DS1250W-150+ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипDS1220AB-100IND+Anlielectronics Тип | Maxim Integrated |
IC NVSRAM 16K PARALLEL 24EDIP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | - | - | Through Hole | 24-DIP Module (0.600, 15.24mm) | NO | - | - | Non-Volatile | -40°C~85°C TA | Tube | 2004 | - | e3 | yes | Active | 1 (Unlimited) | 24 | - | EAR99 | MATTE TIN | - | - | - | 8473.30.11.40 | 4.75V~5.25V | DUAL | NOT SPECIFIED | 1 | 5V | 2.54mm | not_compliant | - | NOT SPECIFIED | DS1220A | 24 | R-PDMA-P24 | Not Qualified | - | 5.25V | 5V | 4.75V | - | - | - | 16Kb 2K x 8 | - | ASYNCHRONOUS | - | NVSRAM | Parallel | - | 2KX8 | 8 | 100ns | - | - | 0.01A | 16384 bit | 100 ns | - | - | - | - | - | 10.668mm | 33.02mm | 15.24mm | - | - | ROHS3 Compliant | - | ||
| DS1220AB-100IND+ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипDS1230AB-120IND+Anlielectronics Тип | Maxim Integrated |
IC NVSRAM 256K PARALLEL 28EDIP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | - | - | Through Hole | 28-DIP Module (0.600, 15.24mm) | NO | - | - | Non-Volatile | -40°C~85°C TA | Tube | 2002 | - | e3 | yes | Active | 1 (Unlimited) | 28 | - | EAR99 | MATTE TIN | - | - | - | 8473.30.11.40 | 4.75V~5.25V | DUAL | NOT SPECIFIED | 1 | 5V | 2.54mm | - | - | NOT SPECIFIED | DS1230AB | 28 | R-XDMA-P28 | Not Qualified | - | 5.25V | 5V | 4.75V | - | - | - | 256Kb 32K x 8 | - | ASYNCHRONOUS | - | NVSRAM | Parallel | - | 32KX8 | 8 | 120ns | - | - | 0.0006A | 262144 bit | 120 ns | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| DS1230AB-120IND+ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипDS24B33+Anlielectronics Тип
IN STOCK: 17851
| Maxim Integrated |
IC EEPROM 4K 1WIRE TO92-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 11 Weeks | Tin | Through Hole | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | - | 3 | - | Non-Volatile | -40°C~85°C TA | Bulk | 2001 | - | e3 | yes | Active | 1 (Unlimited) | 3 | - | EAR99 | - | - | - | - | - | 2.8V~5.25V | BOTTOM | 260 | 1 | - | 1.27mm | - | - | 30 | DS24B33 | 3 | - | - | - | 5.25V | - | 2.8V | Serial | - | - | 4Kb 256 x 16 | - | - | 2μs | EEPROM | 1-Wire® | - | 4KX1 | - | - | - | 4 kb | - | - | - | - | 50000 Write/Erase Cycles | - | 150°C | 4.95mm | - | 4.95mm | 4.95mm | No | No SVHC | ROHS3 Compliant | - | ||
| DS24B33+ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипDS1250W-100IND+Anlielectronics Тип | Maxim Integrated |
IC NVSRAM 4M PARALLEL 32EDIP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 9 Weeks | - | - | Through Hole | 32-DIP Module (0.600, 15.24mm) | NO | - | - | Non-Volatile | -40°C~85°C TA | Tube | 2004 | - | e3 | yes | Active | 1 (Unlimited) | 32 | - | 3A991.B.2.A | MATTE TIN | - | - | - | 8473.30.11.40 | 3V~3.6V | DUAL | NOT SPECIFIED | 1 | 3.3V | 2.54mm | - | - | NOT SPECIFIED | DS1250W | 32 | R-XDMA-P32 | Not Qualified | - | 3.6V | 3.3V | 3V | - | - | - | 4Mb 512K x 8 | - | ASYNCHRONOUS | - | NVSRAM | Parallel | - | 512KX8 | 8 | 100ns | - | - | 0.00025A | 4194304 bit | 100 ns | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| DS1250W-100IND+ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипDS1350WP-100IND+Anlielectronics Тип | Maxim Integrated |
IC NVSRAM 4M PARALLEL 34PWRCAP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 11 Weeks | - | - | Surface Mount | 34-PowerCap™ Module | YES | 34 | - | Non-Volatile | -40°C~85°C TA | Tray | 2000 | - | e3 | yes | Active | 3 (168 Hours) | 34 | - | 3A991.B.2.A | MATTE TIN | - | - | - | 8473.30.11.40 | 3V~3.6V | DUAL | NOT SPECIFIED | 1 | 3.3V | - | - | 100GHz | NOT SPECIFIED | DS1350W | 34 | - | Not Qualified | 3.3V | 3.6V | - | 3V | - | - | - | 4Mb 512K x 8 | - | ASYNCHRONOUS | - | NVSRAM | Parallel | 8b | 512KX8 | 8 | 100ns | - | 4 Mb | 0.00015A | - | 100 ns | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | Lead Free | ||
| DS1350WP-100IND+ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипDS1350WP-100+Anlielectronics Тип | Maxim Integrated |
IC NVSRAM 4M PARALLEL 34PWRCAP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 11 Weeks | - | - | Surface Mount | 34-PowerCap™ Module | YES | 34 | - | Non-Volatile | 0°C~70°C TA | Tube | 2000 | - | e3 | yes | Active | 3 (168 Hours) | 34 | - | 3A991.B.2.A | MATTE TIN | - | - | - | 8473.30.11.40 | 3V~3.6V | DUAL | - | 1 | 3.3V | - | - | 100GHz | - | DS1350W | 34 | - | - | 3.3V | 3.6V | - | 3V | - | - | - | 4Mb 512K x 8 | 50mA | - | - | NVSRAM | Parallel | 8b | 512KX8 | 8 | 100ns | - | 4 Mb | 0.00015A | - | 100 ns | - | - | - | - | - | - | - | - | No | - | ROHS3 Compliant | Lead Free | ||
| DS1350WP-100+ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипDS1250WP-100+Anlielectronics Тип | Maxim Integrated |
IC NVSRAM 4M PARALLEL 34PWRCAP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 11 Weeks | - | - | Surface Mount | 34-PowerCap™ Module | YES | 34 | - | Non-Volatile | 0°C~70°C TA | Tube | 2004 | - | e3 | yes | Active | 3 (168 Hours) | 34 | - | 3A991.B.2.A | MATTE TIN | - | - | - | 8542.32.00.41 | 3V~3.6V | DUAL | - | 1 | 3.3V | - | - | 100GHz | - | DS1250W | 34 | - | - | 3.3V | 3.6V | - | 3V | - | - | - | 4Mb 512K x 8 | 50mA | - | - | NVSRAM | Parallel | 8b | 512KX8 | 8 | 100ns | - | 4 Mb | 0.00025A | - | 100 ns | - | - | - | - | - | - | - | - | No | - | ROHS3 Compliant | Lead Free | ||
| DS1250WP-100+ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипDS1225AB-170+Anlielectronics Тип | Maxim Integrated |
IC NVSRAM 64K PARALLEL 28EDIP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | - | - | Through Hole | 28-DIP Module (0.600, 15.24mm) | NO | 28 | - | Non-Volatile | 0°C~70°C TA | Tube | 2004 | - | e3 | yes | Active | 1 (Unlimited) | 28 | - | EAR99 | TIN | - | - | BATTERY BACK-UP | 8473.30.11.40 | 4.75V~5.25V | DUAL | NOT SPECIFIED | 1 | 5V | - | not_compliant | - | NOT SPECIFIED | DS1225A | - | - | Not Qualified | - | 5.25V | - | 4.75V | - | - | - | 64Kb 8K x 8 | - | ASYNCHRONOUS | - | NVSRAM | Parallel | - | 8KX8 | 8 | 170ns | - | - | - | 65536 bit | 170 ns | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| DS1225AB-170+ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипDS1345YP-100+Anlielectronics Тип | Maxim Integrated |
IC NVSRAM 1M PARALLEL 34PWRCAP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 15 Weeks | Tin | Surface Mount | Surface Mount | 34-PowerCap™ Module | - | 34 | - | Non-Volatile | 0°C~70°C TA | Tray | 2010 | - | e3 | yes | Active | 3 (168 Hours) | 34 | - | 3A991.B.2.A | - | - | - | 10 YEAR DATA RETENTION | 8473.30.11.40 | 4.5V~5.5V | DUAL | 245 | 1 | 5V | - | - | 100GHz | 40 | DS1345Y | 34 | - | - | 5V | - | 5V | - | - | - | - | 1Mb 128K x 8 | 85mA | - | - | NVSRAM | Parallel | 8b | 128KX8 | - | 100ns | 8b | 1 Mb | 0.00015A | - | 100 ns | - | - | - | - | 2.03mm | - | 23.5mm | 25.02mm | No | Unknown | ROHS3 Compliant | Lead Free | ||
| DS1345YP-100+ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипDS2431P-A1+TAnlielectronics Тип | Maxim Integrated |
IC EEPROM 1KBIT 1WIRE 6TSOC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | - | - | Surface Mount | 6-LSOJ (0.148, 3.76mm Width) | YES | 6 | - | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2009 | Automotive, AEC-Q100 | e3 | yes | Active | 1 (Unlimited) | 6 | - | EAR99 | Matte Tin (Sn) | - | - | - | 8542.32.00.51 | - | DUAL | 260 | 1 | 5V | 1.27mm | - | - | 30 | DS2431 | 6 | - | - | 5V | - | 5V | - | Serial | 5.25V | 4.5V | 1Kb 256 x 4 | - | - | 2μs | EEPROM | 1-Wire® | - | 1KX1 | 1 | - | - | 1 kb | - | - | - | - | 50000 Write/Erase Cycles | 10 | - | - | 1.5mm | 3.94mm | - | No | - | ROHS3 Compliant | - | ||
| DS2431P-A1+T |
Индекс :
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