| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Mounting Type | Package / Case | Supplier Device Package | DRAM Type | Factory Pack QuantityFactory Pack Quantity | Interface Type | Maximum Clock Frequency | Maximum Operating Temperature | Memory Types | Mfr | Minimum Operating Temperature | Moisture Sensitive | Mounting Styles | Package | Product Status | Supplier Package | Supply Voltage-Max | Supply Voltage-Min | Operating Temperature | Packaging | Series | Type | Technology | Voltage - Supply | Operating Supply Voltage | Memory Size | Clock Frequency | Supply Current-Max | Access Time | Memory Format | Memory Interface | Data Bus Width | Organization | Write Cycle Time - Word, Page | Memory Organization |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипMTFC256GAVATTC-AATAnlielectronics Тип | Micron |
Universal Flash Storage - UFS UFS 2T
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | 1520 | - | - | + 105 C | - | Micron Technology Inc. | - 40 C | - | - | Box | Active | LFBGA | 3.3 V | 3.3 V | -40 to 105 °C | Tray | - | - | - | - | 3.3 V | 256 GB | - | - | - | - | - | - | - | - | - | ||
| MTFC256GAVATTC-AAT | |||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMTFC128GAVATTC-AITAnlielectronics Тип | Micron |
Universal Flash Storage - UFS UFS 1T LFBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | 1520 | UFS 3.1 | - | + 85 C | - | Micron Technology Inc. | - 40 C | Yes | - | Box | Active | - | 3.3 V | 3.3 V | - | Tray | - | - | - | - | 3.3 V | 128 GB | - | - | - | - | - | - | - | - | - | ||
| MTFC128GAVATTC-AIT | |||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMT40A2G8JE-062E AUT:EAnlielectronics Тип | Micron |
DRAM DDR4 16G 2GX8 FBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Surface Mount | 78-TFBGA | 78-FBGA (9x11) | - | 1260 | - | 1.6 GHz | + 125 C | Volatile | Micron Technology Inc. | - 40 C | - | SMD/SMT | Box | Active | - | 1.2 V | - | -40°C ~ 125°C (TC) | Tray | Automotive, AEC-Q100 | SDRAM - DDR4 | SDRAM - DDR4 | 1.14V ~ 1.26V | - | 16 Gbit | 1.6 GHz | - | 19 ns | DRAM | POD | 8 bit | 2 G x 8 | 15ns | 2G x 8 | ||
| MT40A2G8JE-062E AUT:E | |||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMT53E256M32D2FW-046 IT:B TRAnlielectronics Тип | Micron |
DRAM LPDDR4 8G 256MX32 FBGA DDP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Surface Mount | VFBGA-200 | 200-TFBGA (10x14.5) | - | 2000 | - | 2.133 GHz | + 85 C | Volatile | Micron Technology Inc. | - 40 C | - | SMD/SMT | Tape & Reel (TR) | Active | - | 1.1 V | - | -40°C ~ 95°C (TC) | Reel | - | SDRAM Mobile - LPDDR4 | SDRAM - Mobile LPDDR4X | 1.06V ~ 1.17V | - | 8 Gbit | 2.133 GHz | - | 3.5 ns | DRAM | Parallel | 32 bit | 256 M x 32 | 18ns | 256M x 32 | ||
| MT53E256M32D2FW-046 IT:B TR | |||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMT40A2G8JE-062E AAT:EAnlielectronics Тип | Micron |
DRAM DDR4 16G 2GX8 FBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Surface Mount | 78-TFBGA | 78-FBGA (9x11) | - | 1260 | - | 1.6 GHz | + 105 C | Volatile | Micron Technology Inc. | - 40 C | - | SMD/SMT | Box | Active | - | 1.2 V | - | -40°C ~ 105°C (TC) | Tray | Automotive, AEC-Q100 | SDRAM - DDR4 | SDRAM - DDR4 | 1.14V ~ 1.26V | - | 16 Gbit | 1.6 GHz | - | 19 ns | DRAM | POD | 8 bit | 2 G x 8 | 15ns | 2G x 8 | ||
| MT40A2G8JE-062E AAT:E | |||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMT62F1G64D8EK-031 WT:BAnlielectronics Тип | Micron |
DRAM LPDDR5 64G 1GX64 FBGA 8DP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Surface Mount | 441-TFBGA | 441-TFBGA (14x14) | Mobile LPDDR5 | 1190 | - | 3.2 GHz | + 85 C | Volatile | Micron Technology Inc. | - 25 C | Yes | SMD/SMT | Box | Active | - | 1.05 V | - | -25°C ~ 85°C | Tray | - | SDRAM Mobile - LPDDR5 | SDRAM - Mobile LPDDR5 | 1.05V | - | 64 Gbit | 3.2 GHz | - | 313ps | DRAM | Parallel | 64 bit | 1 G x 64 | - | 1G x 64 | ||
| MT62F1G64D8EK-031 WT:B | |||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMT40A1G16KH-062E AIT:EAnlielectronics Тип | Micron |
DRAM DDR4 16G 1GX16 FBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Surface Mount | 96-TFBGA | 96-FBGA (9x13) | - | 1140 | - | 1.6 GHz | + 95 C | Volatile | Micron Technology Inc. | - 40 C | Yes | SMD/SMT | Box | Active | - | 1.2 V | - | -40°C ~ 95°C (TC) | Tray | Automotive, AEC-Q100 | SDRAM - DDR4 | SDRAM - DDR4 | 1.14V ~ 1.26V | - | 16 Gbit | 1.6 GHz | - | 19 ns | DRAM | POD | 16 bit | 1 G x 16 | 15ns | 1G x 16 | ||
| MT40A1G16KH-062E AIT:E | |||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMT62F512M64D4EK-031 AAT:B TRAnlielectronics Тип | Micron |
DRAM LPDDR5 32G 512MX64 FBGA QDP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Surface Mount | 441-TFBGA | 441-TFBGA (14x14) | - | 1500 | - | 3.2 GHz | + 105 C | Volatile | Micron Technology Inc. | - 40 C | Yes | SMD/SMT | Tape & Reel (TR) | Active | - | 1.05 V | - | -40°C ~ 105°C | Cut Tape | Automotive, AEC-Q100 | SDRAM Mobile - LPDDR5 | SDRAM - Mobile LPDDR5 | - | - | 32 Gbit | 3.2 GHz | - | - | DRAM | Parallel | 64 bit | 512 M x 64 | - | 512M x 64 | ||
| MT62F512M64D4EK-031 AAT:B TR | |||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMT29GZ5A5BPGGA-046AIT.87JAnlielectronics Тип | Micron |
Multichip Packages NAND MCP 8G VFBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Surface Mount | 149-WFBGA | 149-WFBGA (8x9.5) | - | 1260 | - | - | - | Non-Volatile, Volatile | Micron Technology Inc. | - | - | SMD/SMT | Box | Active | - | 1.95 V | 1.7 V | -40°C ~ 85°C (TA) | Tray | Automotive, AEC-Q100 | NAND Flash, LPDDR2 | FLASH - NAND (SLC), DRAM - LPDDR4 | 1.06V ~ 1.17V, 1.7V ~ 1.95V | - | 4 Gbit, 4 Gbit | - | - | 25 ns | FLASH, RAM | ONFI | - | 512 M x 8, 128 M x 32 | 30ns | 512M x 8 | ||
| MT29GZ5A5BPGGA-046AIT.87J | |||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMT53E256M32D2FW-046 AUT:BAnlielectronics Тип | Micron |
DRAM LPDDR4 8G 256MX32 FBGA DDP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Surface Mount | VFBGA-200 | 200-TFBGA (10x14.5) | - | 1360 | - | 2.133 GHz | + 125 C | Volatile | Micron Technology Inc. | - 40 C | - | SMD/SMT | Box | Active | - | 1.1 V | - | -40°C ~ 125°C (TC) | Tray | Automotive, AEC-Q100 | SDRAM Mobile - LPDDR4 | SDRAM - Mobile LPDDR4 | 1.06V ~ 1.17V | - | 8 Gbit | 2.133 GHz | - | 3.5 ns | DRAM | Parallel | 32 bit | 256 M x 32 | 18ns | 256M x 32 | ||
| MT53E256M32D2FW-046 AUT:B | |||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMT40A1G16KH-062E AAT:EAnlielectronics Тип | Micron |
DRAM DDR4 16G 1GX16 FBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Surface Mount | 96-TFBGA | 96-FBGA (9x13) | - | 1140 | - | 1.6 GHz | + 105 C | Volatile | Micron Technology Inc. | - 40 C | - | SMD/SMT | Box | Active | - | 1.26 V | 1.14 V | -40°C ~ 105°C (TC) | Tray | Automotive, AEC-Q100 | SDRAM - DDR4 | SDRAM - DDR4 | 1.14V ~ 1.26V | - | 16 Gbit | 1.6 GHz | 84 mA | 13.75 ns | DRAM | POD | 16 bit | 1 G x 16 | 15ns | 1G x 16 | ||
| MT40A1G16KH-062E AAT:E | |||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMT29GZ5A5BPGGA-046AAT.87JAnlielectronics Тип | Micron |
Multichip Packages NAND MCP 8G VFBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Surface Mount | 149-WFBGA | 149-WFBGA (8x9.5) | - | 1260 | - | - | - | Non-Volatile, Volatile | Micron Technology Inc. | - | - | SMD/SMT | Box | Active | - | 1.95 V | 1.7 V | -40°C ~ 105°C (TA) | Tray | Automotive, AEC-Q100 | NAND Flash, LPDDR2 | FLASH - NAND (SLC), DRAM - LPDDR4 | 1.06V ~ 1.17V, 1.7V ~ 1.95V | - | 4 Gbit, 4 Gbit | - | - | 25 ns | FLASH, RAM | ONFI | - | 512 M x 8, 128 M x 32 | 30ns | 512M x 8 | ||
| MT29GZ5A5BPGGA-046AAT.87J | |||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMT53E512M32D2FW-046 AAT:DAnlielectronics Тип | Micron |
DRAM LPDDR4 16G 512MX32 FBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Surface Mount | VFBGA-200 | 200-TFBGA (10x14.5) | LPDDR4 | 1360 | - | 2.133 GHz | + 105 C | Volatile | Micron Technology Inc. | - 40 C | - | SMD/SMT | Box | Last Time Buy | - | 1.1 V | - | -40°C ~ 105°C | Tray | Automotive, AEC-Q100 | SDRAM Mobile - LPDDR4 | SDRAM - Mobile LPDDR4 | - | - | 16 Gbit | 2.133 GHz | - | - | DRAM | Parallel | 32 bit | 512 M x 32 | - | 512M x 32 | ||
| MT53E512M32D2FW-046 AAT:D | |||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMT62F1G64D8EK-031 AIT:BAnlielectronics Тип | Micron |
DRAM LPDDR5 64G 1GX64 FBGA 8DP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Surface Mount | 441-TFBGA | 441-TFBGA (14x14) | - | 1190 | - | 3.2 GHz | + 85 C | Volatile | Micron Technology Inc. | - 40 C | - | SMD/SMT | Box | Active | - | 1.05 V | - | -40°C ~ 95°C | Tray | Automotive, AEC-Q100 | SDRAM Mobile - LPDDR5 | SDRAM - Mobile LPDDR5 | 1.05V | - | 64 Gbit | 3.2 GHz | - | - | DRAM | Parallel | 64 bit | 1 G x 64 | - | 1G x 64 | ||
| MT62F1G64D8EK-031 AIT:B | |||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMT29GZ5A5BPGGA-046AIT.87J TRAnlielectronics Тип | Micron |
Multichip Packages NAND MCP 8G VFBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Surface Mount | 149-WFBGA | 149-WFBGA (8x9.5) | - | 2000 | - | - | - | Non-Volatile, Volatile | Micron Technology Inc. | - | - | SMD/SMT | Tape & Reel (TR) | Active | - | 1.95 V | 1.7 V | -40°C ~ 85°C (TA) | Reel | Automotive, AEC-Q100 | NAND Flash, LPDDR2 | FLASH - NAND (SLC), DRAM - LPDDR4 | 1.06V ~ 1.17V, 1.7V ~ 1.95V | - | 4 Gbit, 4 Gbit | - | - | 25 ns | FLASH, RAM | ONFI | - | 512 M x 8, 128 M x 32 | 30ns | 512M x 8 | ||
| MT29GZ5A5BPGGA-046AIT.87J TR | |||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMT62F1G32D4DS-031 AAT:B TRAnlielectronics Тип | Micron |
DRAM LPDDR5 32G 1GX32 FBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Surface Mount | 200-WFBGA | 200-WFBGA (10x14.5) | - | 2000 | - | 3.2 GHz | + 105 C | Volatile | Micron Technology Inc. | - 40 C | Yes | SMD/SMT | Tape & Reel (TR) | Active | - | 1.05 V | - | -40°C ~ 105°C | Cut Tape | Automotive, AEC-Q100 | SDRAM Mobile - LPDDR5 | SDRAM - Mobile LPDDR5 | 1.05V | - | 32 Gbit | 3.2 GHz | - | - | DRAM | Parallel | 32 bit | 1 G x 32 | - | 1G x 32 | ||
| MT62F1G32D4DS-031 AAT:B TR | |||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMT62F1G64D8EK-031 AAT:BAnlielectronics Тип | Micron |
DRAM LPDDR5 64G 1GX64 FBGA 8DP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Surface Mount | 441-TFBGA | 441-TFBGA (14x14) | - | 1190 | - | 3.2 GHz | + 105 C | Volatile | Micron Technology Inc. | - 40 C | - | SMD/SMT | Box | Active | - | 1.05 V | - | -40°C ~ 105°C | Tray | Automotive, AEC-Q100 | SDRAM Mobile - LPDDR5 | SDRAM - Mobile LPDDR5 | 1.05V | - | 64 Gbit | 3.2 GHz | - | - | DRAM | Parallel | 64 bit | 1 G x 64 | - | 1G x 64 | ||
| MT62F1G64D8EK-031 AAT:B | |||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMT29GZ5A5BPGGA-046IT.87JAnlielectronics Тип | Micron |
Multichip Packages NAND MCP 8G VFBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Surface Mount | 149-WFBGA | 149-WFBGA (8x9.5) | - | 1260 | - | - | - | Non-Volatile, Volatile | Micron Technology Inc. | - | - | SMD/SMT | Box | Active | - | 1.95 V | 1.7 V | -40°C ~ 85°C (TA) | Tray | - | NAND Flash, LPDDR2 | FLASH - NAND (SLC), DRAM - LPDDR4 | 1.06V ~ 1.17V, 1.7V ~ 1.95V | - | 4 Gbit, 4 Gbit | - | - | 25 ns | FLASH, RAM | ONFI | - | 512 M x 8, 128 M x 32 | 30ns | 512M x 8 | ||
| MT29GZ5A5BPGGA-046IT.87J | |||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMT62F512M64D4EK-031 AIT:B TRAnlielectronics Тип | Micron |
DRAM LPDDR5 32G 512MX64 FBGA QDP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Surface Mount | 441-TFBGA | 441-TFBGA (14x14) | - | 1500 | - | 3.2 GHz | + 85 C | Volatile | Micron Technology Inc. | - 40 C | Yes | SMD/SMT | Tape & Reel (TR) | Active | - | 1.05 V | - | -40°C ~ 95°C | Cut Tape | Automotive, AEC-Q100 | SDRAM Mobile - LPDDR5 | SDRAM - Mobile LPDDR5 | - | - | 32 Gbit | 3.2 GHz | - | - | DRAM | Parallel | 64 bit | 512 M x 64 | - | 512M x 64 | ||
| MT62F512M64D4EK-031 AIT:B TR | |||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMT29GZ5A5BPGGA-046AAT.87J TRAnlielectronics Тип | Micron |
Multichip Packages NAND MCP 8G VFBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Surface Mount | 149-WFBGA | 149-WFBGA (8x9.5) | - | 2000 | - | - | - | Non-Volatile, Volatile | Micron Technology Inc. | - | - | SMD/SMT | Tape & Reel (TR) | Active | - | 1.95 V | 1.7 V | -40°C ~ 105°C (TA) | Reel | Automotive, AEC-Q100 | NAND Flash, LPDDR2 | FLASH - NAND (SLC), DRAM - LPDDR4 | 1.06V ~ 1.17V, 1.7V ~ 1.95V | - | 4 Gbit, 4 Gbit | - | - | 25 ns | FLASH, RAM | ONFI | - | 512 M x 8, 128 M x 32 | 30ns | 512M x 8 | ||
| MT29GZ5A5BPGGA-046AAT.87J TR |
Индекс :
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