| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Mounting Type | Package / Case | Supplier Device Package | Base Product Number | Dimensions | Factory Pack QuantityFactory Pack Quantity | Interface Type | Maximum Clock Frequency | Maximum Clock Rate | Maximum Operating Temperature | Memory Types | Mfr | Minimum Operating Temperature | Moisture Sensitive | Mounting | Mounting Styles | Number of I/O Lines | Package | Product Status | RoHS | Sequential Read | Sequential Write | Supplier Package | Supply Voltage-Max | Supply Voltage-Min | Sustained Read | Sustained Write | Usage Level | Operating Temperature | Packaging | Series | Type | Technology | Voltage - Supply | Pin Count | Operating Supply Voltage | Configuration | Memory Size | Clock Frequency | Access Time | Memory Format | Memory Interface | Data Bus Width | Organization | Write Cycle Time - Word, Page | Address Bus Width | Density | Screening Level | Product | Number of Banks | Memory Organization |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипMT29F512G08EBLEEJ4-T:E TRAnlielectronics Тип | Micron |
NAND Flash TLC 512G 64GX8 VBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Surface Mount | 132-VBGA | 132-VBGA (12x18) | - | - | 2000 | - | - | - | - | Non-Volatile | Micron Technology Inc. | - | - | - | SMD/SMT | - | Tape & Reel (TR) | Active | Details | - | - | - | - | - | - | - | - | 0°C ~ 70°C | Reel | - | - | FLASH - NAND (TLC) | 2.6V ~ 3.6V | - | - | - | 512 Gbit | - | - | FLASH | Parallel | 8 bit | 64 G x 8 | - | - | - | - | - | - | 64G x 8 | ||
| MT29F512G08EBLEEJ4-T:E TR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMT29F4T08EULEEM4-QJ:E TRAnlielectronics Тип | Micron |
NAND Flash TLC 4T 512GX8 LBGA 8DP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | 2000 | - | - | - | - | - | Micron Technology Inc. | - | - | - | SMD/SMT | - | Tape & Reel (TR) | Active | Details | - | - | - | - | - | - | - | - | - | Reel | - | - | - | - | - | - | - | 4 Tbit | - | - | - | - | 8 bit | 512 G x 8 | - | - | - | - | - | - | - | ||
| MT29F4T08EULEEM4-QJ:E TR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMT29F8T08ESLEEG4-QB:E TRAnlielectronics Тип | Micron |
NAND Flash TLC 8T 1TX8 FBGA 16DP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | 1500 | - | - | - | - | - | Micron Technology Inc. | - | - | - | SMD/SMT | - | Tape & Reel (TR) | Active | Details | - | - | - | - | - | - | - | - | - | Reel | - | - | - | - | - | - | - | 8 Tbit | - | - | - | - | 8 bit | 1 T x 8 | - | - | - | - | - | - | - | ||
| MT29F8T08ESLEEG4-QB:E TR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMT29F2T08EMLEEJ4-M:E TRAnlielectronics Тип | Micron |
NAND Flash TLC 2T 256GX8 VBGA QDP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | 2000 | - | - | - | - | - | Micron Technology Inc. | - | - | - | SMD/SMT | - | Tape & Reel (TR) | Active | Details | - | - | - | - | - | - | - | - | - | Reel | - | - | - | - | - | - | - | 2 Tbit | - | - | - | - | 8 bit | 256 G x 8 | - | - | - | - | - | - | - | ||
| MT29F2T08EMLEEJ4-M:E TR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMT29F1T08EELEEJ4-QA:EAnlielectronics Тип | Micron |
NAND Flash TLC 1T 128GX8 VBGA DDP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | 1120 | - | - | - | - | - | Micron Technology Inc. | - | - | - | SMD/SMT | - | Box | Active | Details | - | - | - | - | - | - | - | - | - | Tray | - | - | - | - | - | - | - | 1 Tbit | - | - | - | - | 8 bit | 128 G x 8 | - | - | - | - | - | - | - | ||
| MT29F1T08EELEEJ4-QA:E | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMT60B1G16HC-48B:A TRAnlielectronics Тип | Micron |
DRAM DDR5 16G 1GX16 FBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Surface Mount | 102-VFBGA | 102-VFBGA (9x14) | - | - | 2000 | - | - | - | - | Volatile | Micron Technology Inc. | - | - | - | SMD/SMT | - | Tape & Reel (TR) | Active | Details | - | - | - | - | - | - | - | - | 0°C ~ 95°C (TC) | Cut Tape | - | SGRAM - GDDR5 | SDRAM - DDR5 | - | - | - | - | 16 Gbit | 2.4 GHz | 16 ns | DRAM | POD | 16 bit | 1 G x 16 | - | - | - | - | - | - | 1G x 16 | ||
| MT60B1G16HC-48B:A TR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMT29F2T08EMLEEJ4-M:EAnlielectronics Тип | Micron |
NAND Flash TLC 2T 256GX8 VBGA QDP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | 1120 | - | - | - | - | - | Micron Technology Inc. | - | - | - | SMD/SMT | - | Box | Active | Details | - | - | - | - | - | - | - | - | - | Tray | - | - | - | - | - | - | - | 2 Tbit | - | - | - | - | 8 bit | 256 G x 8 | - | - | - | - | - | - | - | ||
| MT29F2T08EMLEEJ4-M:E | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMT29F1T08EELEEJ4-M:E TRAnlielectronics Тип | Micron |
NAND Flash TLC 1T 128GX8 VBGA DDP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | 2000 | - | - | - | - | - | Micron Technology Inc. | - | - | - | SMD/SMT | - | Tape & Reel (TR) | Active | Details | - | - | - | - | - | - | - | - | - | Reel | - | - | - | - | - | - | - | 1 Tbit | - | - | - | - | 8 bit | 128 G x 8 | - | - | - | - | - | - | - | ||
| MT29F1T08EELEEJ4-M:E TR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMTFC128GAXATEA-WTAnlielectronics Тип | Micron |
Universal Flash Storage - UFS UFS 1T
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Surface Mount | WFBGA-153 | 153-WFBGA (11.5x13) | - | 11.5 mm x 13 mm | 1520 | UFS 3.1 | - | - | + 85 C | Non-Volatile | Micron Technology Inc. | - 25 C | - | - | SMD/SMT | - | Box | Active | Details | - | - | - | - | - | - | - | - | -25°C ~ 85°C | - | - | - | FLASH - NAND (SLC) | - | - | - | - | 128 GB | - | - | FLASH | UFS 3.1 | - | - | - | - | - | - | UFS | - | 128G x 8 | ||
| MTFC128GAXATEA-WT | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMT53E512M32D2NP-053 RS WT:AAnlielectronics Тип | Micron |
DRAM LPDDR4 16G 512MX32 FBGA DDP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | VFBGA-200 | - | - | - | 1360 | - | - | - | - | - | - | - | - | - | SMD/SMT | - | - | - | - | - | - | - | - | - | - | - | - | - | Tray | MT53E | - | - | - | - | - | - | 16 Gbit | - | - | - | - | 32 bit | 512 M x 32 | - | - | - | - | - | - | - | ||
| MT53E512M32D2NP-053 RS WT:A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMT62F512M64D4BG-031 WT:BAnlielectronics Тип | Micron |
DRAM LPDDR5 32G 512MX64 FBGA QDP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | 1190 | - | - | - | - | Volatile | Micron Technology Inc. | - | - | - | SMD/SMT | - | Box | Active | - | - | - | - | - | - | - | - | - | -25°C ~ 85°C | Tray | - | - | SDRAM - Mobile LPDDR5 | - | - | - | - | 32 Gbit | 3.2 GHz | - | DRAM | Parallel | 64 bit | 512 M x 64 | - | - | - | - | - | - | 512M x 64 | ||
| MT62F512M64D4BG-031 WT:B | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMTFC512GARAPAM-WTAnlielectronics Тип | Micron |
eMMC uSSD 4T
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | 1520 | - | - | - | - | - | - | - | - | - | SMD/SMT | - | - | - | - | - | - | - | - | - | - | - | - | - | Tray | - | - | - | - | - | - | - | 512 GB | - | - | - | - | - | - | - | - | - | - | eMMC Flash Drive | - | - | ||
| MTFC512GARAPAM-WT | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMT62F1G128DAWA-031 XT:BAnlielectronics Тип | Micron |
DRAM LPDDR5 128G 1GX128 FBGA 16DP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | 960 | - | - | - | - | - | Micron Technology Inc. | - | - | - | SMD/SMT | - | Box | Active | - | - | - | - | - | - | - | - | - | - | Tray | - | - | - | - | - | - | - | 128 Gbit | - | - | - | - | 128 bit | 1 G x 128 | - | - | - | - | - | - | - | ||
| MT62F1G128DAWA-031 XT:B | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMT53E2G64D8EG-046 WT ES:AAnlielectronics Тип | Micron |
DRAM LPDDR4 128G 2GX64 FBGA 8DP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | VFBGA-200 | - | - | - | 1360 | - | - | - | - | - | - | - | - | - | SMD/SMT | - | - | - | - | - | - | - | - | - | - | - | - | - | Tray | - | - | - | - | - | - | - | 128 Gbit | - | - | - | - | 64 bit | 2 G x 64 | - | - | - | - | - | - | - | ||
| MT53E2G64D8EG-046 WT ES:A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMT62F512M64D4BG-031 WT ES:BAnlielectronics Тип | Micron |
DRAM LPDDR5 32G 512MX64 FBGA QDP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | 1190 | - | - | - | - | - | - | - | - | - | SMD/SMT | - | - | - | - | - | - | - | - | - | - | - | - | - | Tray | - | - | - | - | - | - | - | 32 Gbit | - | - | - | - | 64 bit | 512 M x 64 | - | - | - | - | - | - | - | ||
| MT62F512M64D4BG-031 WT ES:B | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMT53E512M64D4RQ-046 WT:FAnlielectronics Тип | Micron |
DRAM LPDDR4 32G 512MX64 FBGA QDP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | VFBGA-200 | - | - | - | 1360 | - | - | - | - | - | - | - | - | - | SMD/SMT | - | - | - | - | - | - | - | - | - | - | - | - | - | Tray | - | - | - | - | - | - | - | 32 Gbit | - | - | - | - | 64 bit | 512 M x 64 | - | - | - | - | - | - | - | ||
| MT53E512M64D4RQ-046 WT:F | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMTFC4GMWDQ-AIT A TRAnlielectronics Тип | Micron |
eMMC MLC EMMC 32G
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | LBGA-100 | - | - | - | 1000 | - | - | - | + 85 C | - | - | - 40 C | - | - | SMD/SMT | - | - | - | - | 120 MB/s | 15 MB/s | - | - | - | 120 MB/s | 15 MB/s | - | - | Reel | - | - | - | - | - | - | MLC | 4 GB | - | - | - | - | - | - | - | - | - | - | eMMC Flash Drive | - | - | ||
| MTFC4GMWDQ-AIT A TR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMT40A256M16LY-062E AUT:F TRAnlielectronics Тип | Micron |
DRAM DDR4 4G 256MX16 FBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Surface Mount | FBGA-96 | 96-FBGA (7.5x13.5) | - | - | 2000 | - | - | 1600 MHz | + 125 C | Volatile | Micron Technology Inc. | - 40 C | - | Surface Mount | SMD/SMT | 16 Bit | Tape & Reel (TR) | Active | - | - | - | FBGA | 1.26 V | 1.14 V | - | - | Automotive grade | -40 to 125 °C | Reel | MT40A | DDR4 SDRAM | SDRAM - DDR4 | 1.14V ~ 1.26V | 96 | 3.8 V | - | 4 Gbit | 1.6 GHz | 19 ns | DRAM | POD | 16 bit | 256 M x 16 | 15ns | 15 Bit | 4 Gbit | Automotive | - | 8 | 256M x 16 | ||
| MT40A256M16LY-062E AUT:F TR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMT53E128M16D1DS-053 IT:AAnlielectronics Тип | Micron |
DRAM LPDDR4 2G 128MX16 FBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Surface Mount | FBGA | 200-WFBGA (10x14.5) | MT53E128 | - | 1360 | - | 1.866 GHz | - | + 95 C | Volatile | Micron Technology Inc. | - 40 C | Yes | - | SMD/SMT | - | Bulk | Obsolete | Details | - | - | - | 1.1 V | - | - | - | - | -40°C ~ 95°C (TC) | - | - | SDRAM Mobile - LPDDR4 | SDRAM - Mobile LPDDR4 | 1.06V ~ 1.17V | - | - | - | 2 Gbit | 1.866 GHz | - | DRAM | Parallel | 16 bit | 128 M x 16 | - | - | - | - | - | - | 128M x 16 | ||
| MT53E128M16D1DS-053 IT:A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMTFC256GARATEK-WTAnlielectronics Тип | Micron |
Universal Flash Storage - UFS UFS 2T
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Surface Mount | 153-VFBGA | 153-VFBGA (11.5x13) | - | - | 1520 | - | - | - | - | Non-Volatile | Micron Technology Inc. | - 40 C | - | - | - | - | Box | Active | - | - | - | - | 3.3 V | 3.3 V | - | - | - | -25°C ~ 85°C | Tray | - | - | FLASH - NAND (SLC) | - | - | 3.3 V | - | 256 GB | - | - | FLASH | UFS 3.1 | - | - | - | - | - | - | - | - | 256G x 8 | ||
| MTFC256GARATEK-WT |
Индекс :
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