Memory Products For Sale - PDF - Integrated Circuits (ICs) -Page22

Изображение	Тип	Марка	Объяснение	Установленная цена	Количество	RoHS	Surface Mount	Number of Terminals	Access Time-Max	Clock Frequency-Max (fCLK)	Ihs Manufacturer	Moisture Sensitivity Levels	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Rohs Code	Supply Voltage-Nom (Vsup)	JESD-609 Code	Pbfree Code	ECCN Code	Terminal Finish	Additional Feature	HTS Code	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Temperature Grade	Supply Voltage-Min (Vsup)	Number of Ports	Operating Mode	Supply Current-Max	Organization	Output Characteristics	Seated Height-Max	Memory Width	Standby Current-Max	Memory Density	Parallel/Serial	I/O Type	Memory IC Type	Serial Bus Type	Endurance	Write Cycle Time-Max (tWC)	Data Retention Time-Min	Write Protection	Standby Voltage-Min	Output Enable	Refresh Cycles	I2C Control Byte	Sequential Burst Length	Interleaved Burst Length	Access Mode	Self Refresh	Length	Width

Изображение	Тип	Марка	Объяснение	Количество	Surface Mount	Number of Terminals	Access Time-Max	Clock Frequency-Max (fCLK)	Ihs Manufacturer	Moisture Sensitivity Levels	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Rohs Code	Supply Voltage-Nom (Vsup)	JESD-609 Code	Pbfree Code	ECCN Code	Terminal Finish	Additional Feature	HTS Code	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Temperature Grade	Supply Voltage-Min (Vsup)	Number of Ports	Operating Mode	Supply Current-Max	Organization	Output Characteristics	Seated Height-Max	Memory Width	Standby Current-Max	Memory Density	Parallel/Serial	I/O Type	Memory IC Type	Serial Bus Type	Endurance	Write Cycle Time-Max (tWC)	Data Retention Time-Min	Write Protection	Standby Voltage-Min	Output Enable	Refresh Cycles	I2C Control Byte	Sequential Burst Length	Interleaved Burst Length	Access Mode	Self Refresh	Length	Width
	Mfr. Тип M464S6453HV0-L7A Anlielectronics Тип	Samsung Semiconductor	Synchronous DRAM Module, 64MX64, 5.4ns, CMOS, ROHS COMPLIANT, SODIMM-144 Сборник данных Сравнение	Min.:1 Mult.:1	NO	144	5.4 ns	133 MHz	SAMSUNG SEMICONDUCTOR INC	3	67108864 words	64000000	70 °C	-	UNSPECIFIED	DIMM	DIMM, DIMM144,32	DIMM144,32	RECTANGULAR	MICROELECTRONIC ASSEMBLY	Obsolete	MODULE	Yes	3.3 V	-	-	EAR99	-	AUTO/SELF REFRESH	8542.32.00.36	DUAL	NO LEAD	260	1	0.8 mm	unknown	144	R-XDMA-N144	Not Qualified	3.6 V	COMMERCIAL	3 V	1	SYNCHRONOUS	1.65 mA	64MX64	3-STATE	-	64	0.032 A	4294967296 bit	-	COMMON	SYNCHRONOUS DRAM MODULE	-	-	-	-	-	-	-	8192	-	-	-	DUAL BANK PAGE BURST	YES	-	-
M464S6453HV0-L7A Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип K4G323222M-PC50 Anlielectronics Тип	Samsung Semiconductor	Synchronous Graphics RAM, 1MX32, 4.5ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, QFP-100 Сборник данных Сравнение	Min.:1 Mult.:1	YES	100	4.5 ns	200 MHz	SAMSUNG SEMICONDUCTOR INC	-	1048576 words	1000000	70 °C	-	PLASTIC/EPOXY	QFP	QFP, QFP100,.7X.9	QFP100,.7X.9	RECTANGULAR	FLATPACK	Obsolete	QFP	No	3.3 V	e0	-	EAR99	TIN LEAD	AUTO/SELF REFRESH	8542.32.00.02	QUAD	GULL WING	-	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	3.6 V	COMMERCIAL	3.135 V	1	SYNCHRONOUS	0.29 mA	1MX32	3-STATE	3 mm	32	0.002 A	33554432 bit	-	COMMON	SYNCHRONOUS GRAPHICS RAM	-	-	-	-	-	-	-	2048	-	1,2,4,8,FP	4,8	DUAL BANK PAGE BURST	YES	20 mm	14 mm
K4G323222M-PC50 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип KM681002J-20 Anlielectronics Тип	Samsung Semiconductor	Standard SRAM, 128KX8, 20ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 Сборник данных Сравнение	Min.:1 Mult.:1	YES	32	20 ns	-	SAMSUNG SEMICONDUCTOR INC	-	131072 words	128000	70 °C	-	PLASTIC/EPOXY	SOJ	0.400 INCH, PLASTIC, SOJ-32	SOJ32,.44	RECTANGULAR	SMALL OUTLINE	Obsolete	SOJ	No	5 V	e0	No	3A991.B.2.B	TIN LEAD	-	8542.32.00.41	DUAL	J BEND	-	1	1.27 mm	unknown	32	R-PDSO-J32	Not Qualified	5.5 V	COMMERCIAL	4.5 V	1	ASYNCHRONOUS	0.15 mA	128KX8	3-STATE	3.76 mm	8	0.01 A	1048576 bit	PARALLEL	COMMON	STANDARD SRAM	-	-	-	-	-	4.5 V	YES	-	-	-	-	-	-	20.96 mm	10.16 mm
KM681002J-20 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип KM61257ALJ-35 Anlielectronics Тип	Samsung Semiconductor	Standard SRAM, 256KX1, 35ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, SOJ-24 Сборник данных Сравнение	Min.:1 Mult.:1	YES	24	35 ns	-	SAMSUNG SEMICONDUCTOR INC	-	262144 words	256000	70 °C	-	PLASTIC/EPOXY	SOJ	SOJ, SOJ24,.34	SOJ24,.34	RECTANGULAR	SMALL OUTLINE	Obsolete	SOJ	No	5 V	e0	-	EAR99	TIN LEAD	BATTERY BACKUP	8542.32.00.41	DUAL	J BEND	-	1	1.27 mm	unknown	24	R-PDSO-J24	Not Qualified	5.5 V	COMMERCIAL	4.5 V	1	ASYNCHRONOUS	0.1 mA	256KX1	3-STATE	3.05 mm	1	0.00005 A	262144 bit	PARALLEL	SEPARATE	STANDARD SRAM	-	-	-	-	-	2 V	NO	-	-	-	-	-	-	15.875 mm	7.62 mm
KM61257ALJ-35 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип K4M511633C-BF1L Anlielectronics Тип	Samsung Semiconductor	Synchronous DRAM, 32MX16, 7ns, CMOS, PBGA54 Сборник данных Сравнение	Min.:1 Mult.:1	YES	54	7 ns	111 MHz	SAMSUNG SEMICONDUCTOR INC	-	33554432 words	32000000	70 °C	-25 °C	PLASTIC/EPOXY	FBGA	FBGA, BGA54,9X9,32	BGA54,9X9,32	SQUARE	GRID ARRAY, FINE PITCH	Obsolete	-	Yes	-	-	-	EAR99	-	-	8542.32.00.28	BOTTOM	BALL	-	-	0.8 mm	unknown	-	S-PBGA-B54	Not Qualified	-	OTHER	-	-	-	0.18 mA	32MX16	3-STATE	-	16	0.001 A	536870912 bit	-	COMMON	SYNCHRONOUS DRAM	-	-	-	-	-	-	-	8192	-	1,2,4,8,FP	1,2,4,8	-	-	-	-
K4M511633C-BF1L Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип K4T51043QE-ZCF7 Anlielectronics Тип	Samsung Semiconductor	DDR DRAM, 128MX4, 0.4ns, CMOS, PBGA60 Сборник данных Сравнение	Min.:1 Mult.:1	YES	60	0.4 ns	400 MHz	SAMSUNG SEMICONDUCTOR INC	3	134217728 words	128000000	95 °C	-	PLASTIC/EPOXY	FBGA	FBGA, BGA60,9X11,32	BGA60,9X11,32	RECTANGULAR	GRID ARRAY, FINE PITCH	Obsolete	-	Yes	1.8 V	-	Yes	EAR99	-	-	8542.32.00.28	BOTTOM	BALL	260	-	0.8 mm	compliant	-	R-PBGA-B60	Not Qualified	-	OTHER	-	-	-	0.215 mA	128MX4	3-STATE	-	4	0.008 A	536870912 bit	-	COMMON	DDR2 DRAM	-	-	-	-	-	-	-	8192	-	4,8	4,8	-	-	-	-
K4T51043QE-ZCF7 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип KM48V2104BK-L6 Anlielectronics Тип	Samsung Semiconductor	Description: EDO DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.300 INCH, SOJ-28 Сборник данных Сравнение	Min.:1 Mult.:1	YES	28	60 ns	-	SAMSUNG SEMICONDUCTOR INC	-	2097152 words	2000000	70 °C	-	PLASTIC/EPOXY	SOJ	SOJ, SOJ28,.34	SOJ28,.34	RECTANGULAR	SMALL OUTLINE	Obsolete	SOJ	No	3.3 V	e0	-	EAR99	TIN LEAD	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	8542.32.00.02	DUAL	J BEND	-	1	1.27 mm	unknown	28	R-PDSO-J28	Not Qualified	3.6 V	COMMERCIAL	3 V	1	ASYNCHRONOUS	0.1 mA	2MX8	3-STATE	3.76 mm	8	0.0003 A	16777216 bit	-	COMMON	EDO DRAM	-	-	-	-	-	-	-	2048	-	-	-	FAST PAGE WITH EDO	YES	18.42 mm	7.62 mm
KM48V2104BK-L6 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип K4S281632C-NC1H Anlielectronics Тип	Samsung Semiconductor	Synchronous DRAM, 8MX16, 6ns, CMOS, PDSO54 Сборник данных Сравнение	Min.:1 Mult.:1	YES	54	6 ns	100 MHz	SAMSUNG SEMICONDUCTOR INC	3	8388608 words	8000000	70 °C	-	PLASTIC/EPOXY	TSSOP	-	TSSOP54,.46,16	RECTANGULAR	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	Obsolete	-	No	3.3 V	e0	No	EAR99	TIN LEAD	-	8542.32.00.02	DUAL	GULL WING	-	-	0.4 mm	unknown	-	R-PDSO-G54	Not Qualified	-	COMMERCIAL	-	-	-	0.21 mA	8MX16	3-STATE	-	16	0.001 A	134217728 bit	-	COMMON	SYNCHRONOUS DRAM	-	-	-	-	-	-	-	4096	-	1,2,4,8,FP	1,2,4,8	-	-	-	-
K4S281632C-NC1H Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип S524C80D41-DCB0 Anlielectronics Тип	Samsung Semiconductor	Description: EEPROM, 512X8, Serial, CMOS, PDIP8, Сборник данных Сравнение	Min.:1 Mult.:1	NO	8	-	-	SAMSUNG SEMICONDUCTOR INC	-	512 words	512	70 °C	-25 °C	PLASTIC/EPOXY	DIP	DIP, DIP8,.3	DIP8,.3	RECTANGULAR	IN-LINE	Obsolete	-	-	-	-	-	EAR99	-	-	8542.32.00.51	DUAL	THROUGH-HOLE	-	-	2.54 mm	compliant	-	R-PDIP-T8	Not Qualified	-	OTHER	-	-	-	0.003 mA	512X8	-	-	8	0.000005 A	4096 bit	SERIAL	-	EEPROM	I2C	1000000 Write/Erase Cycles	-	100	HARDWARE	-	-	-	1010DDMR	-	-	-	-	-	-
S524C80D41-DCB0 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип S524L50X51-SCT0 Anlielectronics Тип	Samsung Semiconductor	Description: EEPROM, 2KX8, Serial, CMOS, PDSO8 Сборник данных Сравнение	Min.:1 Mult.:1	YES	8	-	-	SAMSUNG SEMICONDUCTOR INC	-	2048 words	2000	70 °C	-25 °C	PLASTIC/EPOXY	SOP	-	SOP8,.25	RECTANGULAR	SMALL OUTLINE	Contact Manufacturer	-	-	-	-	-	EAR99	-	-	8542.32.00.51	DUAL	GULL WING	-	-	1.27 mm	compliant	-	R-PDSO-G8	Not Qualified	-	OTHER	-	-	-	0.003 mA	2KX8	-	-	8	0.000002 A	16384 bit	SERIAL	-	EEPROM	I2C	1000000 Write/Erase Cycles	-	100	HARDWARE	-	-	-	1010MMMR	-	-	-	-	-	-
S524L50X51-SCT0 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип K4M51323LE-EL1L Anlielectronics Тип	Samsung Semiconductor	Synchronous DRAM, 16MX32, 7ns, CMOS, PBGA90 Сборник данных Сравнение	Min.:1 Mult.:1	YES	90	7 ns	105 MHz	SAMSUNG SEMICONDUCTOR INC	3	16777216 words	16000000	70 °C	-25 °C	PLASTIC/EPOXY	FBGA	FBGA, BGA90,9X15,32	BGA90,9X15,32	RECTANGULAR	GRID ARRAY, FINE PITCH	Obsolete	-	Yes	2.5 V	-	-	EAR99	-	-	8542.32.00.28	BOTTOM	BALL	260	-	0.8 mm	compliant	-	R-PBGA-B90	Not Qualified	-	OTHER	-	-	-	0.28 mA	16MX32	3-STATE	-	32	0.0015 A	536870912 bit	-	COMMON	SYNCHRONOUS DRAM	-	-	-	-	-	-	-	8192	-	1,2,4,8,FP	1,2,4,8	-	-	-	-
K4M51323LE-EL1L Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип KM4132G512TQ-8 Anlielectronics Тип	Samsung Semiconductor	Synchronous Graphics RAM, 512KX32, 6.5ns, CMOS, PQFP100, 14 X 20 MM, 1.20 MM HEIGHT, 0.65 MM PITCH, TQFP-100 Сборник данных Сравнение	Min.:1 Mult.:1	YES	100	6.5 ns	125 MHz	SAMSUNG SEMICONDUCTOR INC	-	524288 words	512000	70 °C	-	PLASTIC/EPOXY	TQFP	TQFP, TQFP100,.7X.9	TQFP100,.7X.9	RECTANGULAR	FLATPACK, THIN PROFILE	Obsolete	QFP	No	3.3 V	e0	No	EAR99	TIN LEAD	AUTO/SELF REFRESH	8542.32.00.02	QUAD	GULL WING	-	1	0.65 mm	unknown	100	R-PQFP-G100	Not Qualified	3.6 V	COMMERCIAL	3 V	1	SYNCHRONOUS	0.25 mA	512KX32	3-STATE	1.2 mm	32	0.002 A	16777216 bit	-	COMMON	SYNCHRONOUS GRAPHICS RAM	-	-	-	-	-	-	-	2048	-	1,2,4,8,FP	4,8	DUAL BANK PAGE BURST	YES	20 mm	14 mm
KM4132G512TQ-8 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип K7N163631B-PI25 Anlielectronics Тип	Samsung Semiconductor	ZBT SRAM, 512KX36, 2.6ns, CMOS, PQFP100 Сборник данных Сравнение	Min.:1 Mult.:1	YES	100	2.6 ns	250 MHz	SAMSUNG SEMICONDUCTOR INC	1	524288 words	512000	85 °C	-40 °C	PLASTIC/EPOXY	QFP	QFP, QFP100,.63X.87	QFP100,.63X.87	RECTANGULAR	FLATPACK	Obsolete	-	Yes	-	e3	Yes	3A991.B.2.A	MATTE TIN	-	8542.32.00.41	QUAD	GULL WING	-	-	0.635 mm	unknown	-	R-PQFP-G100	Not Qualified	-	INDUSTRIAL	-	-	SYNCHRONOUS	0.36 mA	512KX36	3-STATE	-	36	0.13 A	18874368 bit	PARALLEL	COMMON	ZBT SRAM	-	-	-	-	-	3.14 V	-	-	-	-	-	-	-	-	-
K7N163631B-PI25 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип KM658128ALP-8 Anlielectronics Тип	Samsung Semiconductor	Pseudo Static RAM, 128KX8, 80ns, CMOS, PDIP32, 0.600 INCH, PLASTIC, DIP-32 Сборник данных Сравнение	Min.:1 Mult.:1	NO	32	80 ns	-	SAMSUNG SEMICONDUCTOR INC	-	131072 words	128000	70 °C	-	PLASTIC/EPOXY	DIP	DIP, DIP32,.6	DIP32,.6	RECTANGULAR	IN-LINE	Obsolete	DIP	No	5 V	e0	No	EAR99	TIN LEAD	-	8542.32.00.41	DUAL	THROUGH-HOLE	-	1	2.54 mm	unknown	32	R-PDIP-T32	Not Qualified	5.5 V	COMMERCIAL	4.5 V	1	ASYNCHRONOUS	0.07 mA	128KX8	3-STATE	5.08 mm	8	0.0002 A	1048576 bit	PARALLEL	COMMON	PSEUDO STATIC RAM	-	-	-	-	-	3 V	YES	-	-	-	-	-	-	41.91 mm	15.24 mm
KM658128ALP-8 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип K4S281632F-UL750 Anlielectronics Тип	Samsung Semiconductor	Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, LEAD FREE, TSOP2-54 Сборник данных Сравнение	Min.:1 Mult.:1	YES	54	5.4 ns	-	SAMSUNG SEMICONDUCTOR INC	2	8388608 words	8000000	70 °C	-	PLASTIC/EPOXY	TSOP2	TSOP2,	-	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP2	Yes	3.3 V	-	-	EAR99	-	AUTO/SELF REFRESH	8542.32.00.02	DUAL	GULL WING	-	1	0.8 mm	compliant	54	R-PDSO-G54	Not Qualified	3.6 V	COMMERCIAL	3 V	1	SYNCHRONOUS	-	8MX16	-	1.2 mm	16	-	134217728 bit	-	-	SYNCHRONOUS DRAM	-	-	-	-	-	-	-	-	-	-	-	FOUR BANK PAGE BURST	YES	22.22 mm	10.16 mm
K4S281632F-UL750 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип K7R323684M-FC16 Anlielectronics Тип	Samsung Semiconductor	QDR SRAM, 1MX36, 0.5ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	YES	165	0.5 ns	166.66 MHz	SAMSUNG SEMICONDUCTOR INC	-	1048576 words	1000000	70 °C	-	PLASTIC/EPOXY	LBGA	LBGA, BGA165,11X15,40	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Obsolete	BGA	No	1.8 V	e0	-	3A991.B.2.A	TIN LEAD	PIPELINED ARCHITECTURE	8542.32.00.41	BOTTOM	BALL	-	1	1 mm	unknown	165	R-PBGA-B165	Not Qualified	1.9 V	COMMERCIAL	1.7 V	-	SYNCHRONOUS	0.6 mA	1MX36	3-STATE	1.4 mm	36	0.27 A	37748736 bit	PARALLEL	SEPARATE	QDR SRAM	-	-	-	-	-	1.7 V	-	-	-	-	-	-	-	17 mm	15 mm
K7R323684M-FC16 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип S524A40X21-SCT Anlielectronics Тип	Samsung Semiconductor	EEPROM, 256X8, Serial, CMOS, PDSO8, SOP-8 Сборник данных Сравнение	Min.:1 Mult.:1	YES	8	-	0.4 MHz	SAMSUNG SEMICONDUCTOR INC	-	256 words	256	70 °C	-25 °C	PLASTIC/EPOXY	SOP	SOP,	-	RECTANGULAR	SMALL OUTLINE	Obsolete	SOIC	-	2.5 V	-	-	EAR99	-	-	8542.32.00.51	DUAL	GULL WING	-	1	1.27 mm	unknown	8	R-PDSO-G8	Not Qualified	5.5 V	OTHER	1.8 V	-	SYNCHRONOUS	-	256X8	-	1.8 mm	8	-	2048 bit	SERIAL	-	EEPROM	I2C	-	5 ms	-	-	-	-	-	-	-	-	-	-	4.92 mm	3.95 mm
S524A40X21-SCT Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип KMN5X000ZM-B209001 Anlielectronics Тип	Samsung	KMN5X000ZM-B209001 Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
KMN5X000ZM-B209001 Samsung RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип KM41C1000DJ-8 Anlielectronics Тип	Samsung Semiconductor	Fast Page DRAM, 1MX1, 80ns, CMOS, PDSO20, SOJ-20 Сборник данных Сравнение	Min.:1 Mult.:1	YES	20	80 ns	-	SAMSUNG SEMICONDUCTOR INC	-	1048576 words	1000000	70 °C	-	PLASTIC/EPOXY	SOJ	SOJ, SOJ20/26,.34	SOJ20/26,.34	RECTANGULAR	SMALL OUTLINE	Obsolete	SOJ	No	5 V	e0	-	EAR99	TIN LEAD	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	8542.32.00.02	DUAL	J BEND	-	1	1.27 mm	unknown	20	R-PDSO-J20	Not Qualified	5.5 V	COMMERCIAL	4.5 V	1	ASYNCHRONOUS	0.05 mA	1MX1	3-STATE	3.76 mm	1	0.001 A	1048576 bit	-	SEPARATE	FAST PAGE DRAM	-	-	-	-	-	-	-	512	-	-	-	FAST PAGE	-	17.145 mm	7.62 mm
KM41C1000DJ-8 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип K4S51323LC-MG1L Anlielectronics Тип	Samsung Semiconductor	Synchronous DRAM, 16MX32, 7ns, CMOS, PBGA90, FBGA-90 Сборник данных Сравнение	Min.:1 Mult.:1	YES	90	7 ns	100 MHz	SAMSUNG SEMICONDUCTOR INC	-	16777216 words	16000000	85 °C	-25 °C	PLASTIC/EPOXY	LFBGA	LFBGA, BGA90,9X15,32	BGA90,9X15,32	RECTANGULAR	GRID ARRAY, LOW PROFILE, FINE PITCH	Obsolete	BGA	No	2.5 V	e0	-	EAR99	TIN LEAD	AUTO/SELF REFRESH	8542.32.00.28	BOTTOM	BALL	-	1	0.8 mm	compliant	90	R-PBGA-B90	Not Qualified	2.7 V	OTHER	2.3 V	1	SYNCHRONOUS	0.28 mA	16MX32	3-STATE	1.4 mm	32	0.0015 A	536870912 bit	-	COMMON	SYNCHRONOUS DRAM	-	-	-	-	-	-	-	8192	-	1,2,4,8,FP	1,2,4,8	FOUR BANK PAGE BURST	YES	15.5 mm	9.5 mm
K4S51323LC-MG1L Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -

Integrated Circuits (ICs)

Memory definition: Memory is a component used to store programs and various data information. A memory cell is actually a type of sequential logic circuit. A m... Memory Product Listing: M464S6453HV0-L7A,K4G323222M-PC50,KM681002J-20,KM61257ALJ-35,K4M511633C-BF1L.Integrated Circuits (ICs) type:Embedded - Microcontrollers(129432),Memory(111901),PMIC - Supervisors(101743),PMIC - Voltage Regulators - Linear(101187),PMIC - Voltage Regulators - DC DC Switching Regulators(62822) .Memory has 1151 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.

Индекс :

0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

Локаль

Язык

Валюта

Здравствуйте, добро пожаловать в ANLI

Anlielectronics

Локаль

Язык

Валюта

Mfr. Тип

Anlielectronics Тип

Mfr. Тип

Anlielectronics Тип

Mfr. Тип

Anlielectronics Тип

Mfr. Тип

Anlielectronics Тип

Mfr. Тип

Anlielectronics Тип

Mfr. Тип

Anlielectronics Тип

Mfr. Тип

Anlielectronics Тип

Mfr. Тип

Anlielectronics Тип

Mfr. Тип

Anlielectronics Тип

Mfr. Тип

Anlielectronics Тип

Mfr. Тип

Anlielectronics Тип

Mfr. Тип

Anlielectronics Тип

Mfr. Тип

Anlielectronics Тип

Mfr. Тип

Anlielectronics Тип

Mfr. Тип

Anlielectronics Тип

Mfr. Тип

Anlielectronics Тип

Mfr. Тип

Anlielectronics Тип

Mfr. Тип

Anlielectronics Тип

Mfr. Тип

Anlielectronics Тип

Mfr. Тип

Anlielectronics Тип

Integrated Circuits (ICs)