Memory Products For Sale - PDF - Integrated Circuits (ICs) -Page25

Изображение	Тип	Марка	Объяснение	Установленная цена	Количество	RoHS	Surface Mount	Number of Terminals	Access Time-Max	Clock Frequency-Max (fCLK)	Ihs Manufacturer	Moisture Sensitivity Levels	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Rohs Code	Supply Voltage-Nom (Vsup)	JESD-609 Code	Pbfree Code	ECCN Code	Terminal Finish	Additional Feature	HTS Code	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Time@Peak Reflow Temperature-Max (s)	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Temperature Grade	Supply Voltage-Min (Vsup)	Number of Ports	Operating Mode	Supply Current-Max	Organization	Output Characteristics	Seated Height-Max	Memory Width	Standby Current-Max	Memory Density	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Refresh Cycles	Sequential Burst Length	Interleaved Burst Length	Access Mode	Reverse Pinout	Self Refresh	Length	Width

Изображение	Тип	Марка	Объяснение	Количество	Surface Mount	Number of Terminals	Access Time-Max	Clock Frequency-Max (fCLK)	Ihs Manufacturer	Moisture Sensitivity Levels	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Rohs Code	Supply Voltage-Nom (Vsup)	JESD-609 Code	Pbfree Code	ECCN Code	Terminal Finish	Additional Feature	HTS Code	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Time@Peak Reflow Temperature-Max (s)	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Temperature Grade	Supply Voltage-Min (Vsup)	Number of Ports	Operating Mode	Supply Current-Max	Organization	Output Characteristics	Seated Height-Max	Memory Width	Standby Current-Max	Memory Density	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Refresh Cycles	Sequential Burst Length	Interleaved Burst Length	Access Mode	Reverse Pinout	Self Refresh	Length	Width
	Mfr. Тип K4H560438E-TCA2 Anlielectronics Тип	Samsung Semiconductor	Description: DDR DRAM, 64MX4, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 Сборник данных Сравнение	Min.:1 Mult.:1	YES	66	0.75 ns	133 MHz	SAMSUNG SEMICONDUCTOR INC	-	67108864 words	64000000	70 °C	-	PLASTIC/EPOXY	TSOP2	TSOP2, TSSOP66,.46	TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP2	No	2.5 V	e0	-	EAR99	TIN LEAD	AUTO/SELF REFRESH	8542.32.00.24	DUAL	GULL WING	-	1	0.65 mm	compliant	-	66	R-PDSO-G66	Not Qualified	2.7 V	COMMERCIAL	2.3 V	1	SYNCHRONOUS	0.24 mA	64MX4	3-STATE	1.2 mm	4	0.003 A	268435456 bit	-	COMMON	DDR1 DRAM	-	8192	2,4,8	2,4,8	FOUR BANK PAGE BURST	-	YES	22.22 mm	10.16 mm
K4H560438E-TCA2 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип KM416V4104AS-5 Anlielectronics Тип	Samsung Semiconductor	EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Сборник данных Сравнение	Min.:1 Mult.:1	YES	50	50 ns	-	SAMSUNG SEMICONDUCTOR INC	-	4194304 words	4000000	70 °C	-	PLASTIC/EPOXY	TSOP2	TSOP2, TSOP50,.46,32	TSOP50,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP2	No	3.3 V	e0	No	EAR99	TIN LEAD	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	8542.32.00.02	DUAL	GULL WING	-	1	0.8 mm	unknown	-	50	R-PDSO-G50	Not Qualified	3.6 V	COMMERCIAL	3 V	1	ASYNCHRONOUS	0.15 mA	4MX16	3-STATE	1.2 mm	16	0.0005 A	67108864 bit	-	COMMON	EDO DRAM	-	4096	-	-	FAST PAGE WITH EDO	-	NO	20.95 mm	10.16 mm
KM416V4104AS-5 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип K4S56163LF-XN75 Anlielectronics Тип	Samsung Semiconductor	Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54 Сборник данных Сравнение	Min.:1 Mult.:1	YES	54	5.4 ns	133 MHz	SAMSUNG SEMICONDUCTOR INC	-	16777216 words	16000000	85 °C	-25 °C	PLASTIC/EPOXY	FBGA	-	BGA54,9X9,32	SQUARE	GRID ARRAY, FINE PITCH	Active	-	No	-	e0	-	EAR99	Tin/Lead (Sn/Pb)	-	8542.32.00.24	BOTTOM	BALL	-	-	0.8 mm	compliant	-	-	S-PBGA-B54	Not Qualified	-	OTHER	-	-	-	0.165 mA	16MX16	3-STATE	-	16	0.0005 A	268435456 bit	-	COMMON	SYNCHRONOUS DRAM	-	8192	1,2,4,8,FP	1,2,4,8	-	-	-	-	-
K4S56163LF-XN75 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип K4M64163PH-RF75 Anlielectronics Тип	Samsung Semiconductor	Description: Synchronous DRAM, 4MX16, 6ns, CMOS, PBGA54 Сборник данных Сравнение	Min.:1 Mult.:1	YES	54	6 ns	133 MHz	SAMSUNG SEMICONDUCTOR INC	-	4194304 words	4000000	70 °C	-25 °C	PLASTIC/EPOXY	FBGA	-	BGA54,9X9,32	SQUARE	GRID ARRAY, FINE PITCH	Active	-	No	1.8 V	e0	-	EAR99	Tin/Lead (Sn/Pb)	-	8542.32.00.02	BOTTOM	BALL	-	-	0.8 mm	compliant	-	-	S-PBGA-B54	Not Qualified	-	OTHER	-	-	-	0.06 mA	4MX16	3-STATE	-	16	0.0003 A	67108864 bit	-	COMMON	SYNCHRONOUS DRAM	-	4096	1,2,4,8,FP	1,2,4,8	-	-	-	-	-
K4M64163PH-RF75 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип K4H511638B-TCA2 Anlielectronics Тип	Samsung Semiconductor	DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 Сборник данных Сравнение	Min.:1 Mult.:1	YES	66	0.75 ns	133 MHz	SAMSUNG SEMICONDUCTOR INC	-	33554432 words	32000000	70 °C	-	PLASTIC/EPOXY	TSOP2	TSOP2, TSSOP66,.46	TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP2	No	2.5 V	e0	-	EAR99	TIN LEAD	AUTO/SELF REFRESH	8542.32.00.28	DUAL	GULL WING	-	1	0.65 mm	compliant	-	66	R-PDSO-G66	Not Qualified	2.7 V	COMMERCIAL	2.3 V	1	SYNCHRONOUS	-	32MX16	3-STATE	1.2 mm	16	0.005 A	536870912 bit	-	COMMON	DDR1 DRAM	-	8192	2,4,8	2,4,8	FOUR BANK PAGE BURST	-	YES	22.22 mm	10.16 mm
K4H511638B-TCA2 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип K6R1016C1D-TI12 Anlielectronics Тип	Samsung Semiconductor	Description: Standard SRAM, 64KX16, 12ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44 Сборник данных Сравнение	Min.:1 Mult.:1	YES	44	12 ns	-	SAMSUNG SEMICONDUCTOR INC	-	65536 words	64000	85 °C	-40 °C	PLASTIC/EPOXY	TSOP2	TSOP2, TSOP44,.46,32	TSOP44,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP2	No	5 V	e0	-	3A991.B.2.B	Tin/Lead (Sn/Pb)	-	8542.32.00.41	DUAL	GULL WING	-	1	0.8 mm	unknown	-	44	R-PDSO-G44	Not Qualified	5.5 V	INDUSTRIAL	4.5 V	-	ASYNCHRONOUS	0.065 mA	64KX16	3-STATE	1.2 mm	16	0.005 A	1048576 bit	PARALLEL	COMMON	STANDARD SRAM	4.5 V	-	-	-	-	-	-	18.41 mm	10.16 mm
K6R1016C1D-TI12 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип KM68V4002BJI-10 Anlielectronics Тип	Samsung Semiconductor	Standard SRAM, 512KX8, 10ns, CMOS, PDSO36, 0.400 INCH, PLASTIC, SOJ-36 Сборник данных Сравнение	Min.:1 Mult.:1	YES	36	10 ns	-	SAMSUNG SEMICONDUCTOR INC	-	524288 words	512000	85 °C	-40 °C	PLASTIC/EPOXY	SOJ	SOJ, SOJ36,.44	SOJ36,.44	RECTANGULAR	SMALL OUTLINE	Obsolete	SOJ	No	3.3 V	e0	-	3A991.B.2.A	TIN LEAD	-	8542.32.00.41	DUAL	J BEND	-	1	1.27 mm	unknown	-	36	R-PDSO-J36	Not Qualified	3.6 V	INDUSTRIAL	3 V	-	ASYNCHRONOUS	0.17 mA	512KX8	3-STATE	3.76 mm	8	0.01 A	4194304 bit	PARALLEL	COMMON	STANDARD SRAM	3 V	-	-	-	-	-	-	23.5 mm	10.16 mm
KM68V4002BJI-10 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип K4H560438J-LCB3 Anlielectronics Тип	Samsung Semiconductor	DDR DRAM, 64MX4, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-66 Сборник данных Сравнение	Min.:1 Mult.:1	YES	66	0.7 ns	166 MHz	SAMSUNG SEMICONDUCTOR INC	3	67108864 words	64000000	70 °C	-	PLASTIC/EPOXY	TSOP2	TSOP2, TSSOP66,.46	TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	-	Yes	2.5 V	e6	Yes	EAR99	TIN BISMUTH	AUTO/SELF REFRESH	8542.32.00.24	DUAL	GULL WING	260	1	0.65 mm	unknown	-	-	R-PDSO-G66	Not Qualified	2.7 V	COMMERCIAL	2.3 V	1	SYNCHRONOUS	0.27 mA	64MX4	3-STATE	1.2 mm	4	0.003 A	268435456 bit	-	COMMON	DDR1 DRAM	-	8192	2,4,8	2,4,8	FOUR BANK PAGE BURST	-	YES	22.22 mm	10.16 mm
K4H560438J-LCB3 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип KM416V254DJ-6 Anlielectronics Тип	Samsung Semiconductor	EDO DRAM, 256KX16, 60ns, CMOS, PDSO40, 0.400 INCH, SOJ-40 Сборник данных Сравнение	Min.:1 Mult.:1	YES	40	60 ns	-	SAMSUNG SEMICONDUCTOR INC	-	262144 words	256000	70 °C	-	PLASTIC/EPOXY	SOJ	SOJ, SOJ40,.44	SOJ40,.44	RECTANGULAR	SMALL OUTLINE	Obsolete	SOJ	No	3.3 V	e0	-	EAR99	TIN LEAD	CAS BEFORE RAS/RAS ONLY/HIDDEN REFRESH	8542.32.00.02	DUAL	J BEND	-	1	1.27 mm	unknown	-	40	R-PDSO-J40	Not Qualified	3.6 V	COMMERCIAL	3 V	1	ASYNCHRONOUS	0.07 mA	256KX16	3-STATE	3.76 mm	16	0.0005 A	4194304 bit	-	COMMON	EDO DRAM	-	512	-	-	FAST PAGE WITH EDO	-	NO	26.04 mm	10.16 mm
KM416V254DJ-6 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип KM44V4000AS-6 Anlielectronics Тип	Samsung Semiconductor	Fast Page DRAM, 4MX4, 60ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, TSOP2-26/24 Сборник данных Сравнение	Min.:1 Mult.:1	YES	24	60 ns	-	SAMSUNG SEMICONDUCTOR INC	-	4194304 words	4000000	70 °C	-	PLASTIC/EPOXY	TSOP2	TSOP2, TSOP24/26,.36	TSOP24/26,.36	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP2	No	3.3 V	e0	-	EAR99	Tin/Lead (Sn/Pb)	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	8542.32.00.02	DUAL	GULL WING	-	1	1.27 mm	unknown	-	26	R-PDSO-G24	Not Qualified	3.6 V	COMMERCIAL	3 V	1	ASYNCHRONOUS	0.08 mA	4MX4	3-STATE	1.2 mm	4	0.001 A	16777216 bit	-	COMMON	FAST PAGE DRAM	-	4096	-	-	FAST PAGE	-	NO	17.14 mm	7.62 mm
KM44V4000AS-6 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип K4S641632E-TC70 Anlielectronics Тип	Samsung Semiconductor	Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Сборник данных Сравнение	Min.:1 Mult.:1	YES	54	6 ns	143 MHz	SAMSUNG SEMICONDUCTOR INC	-	4194304 words	4000000	70 °C	-	PLASTIC/EPOXY	TSOP2	TSOP2, TSOP54,.46,32	TSOP54,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP2	No	3.3 V	e0	-	EAR99	TIN LEAD	AUTO/SELF REFRESH	8542.32.00.02	DUAL	GULL WING	-	1	0.8 mm	unknown	-	54	R-PDSO-G54	Not Qualified	3.6 V	COMMERCIAL	3 V	1	SYNCHRONOUS	0.14 mA	4MX16	3-STATE	1.2 mm	16	0.001 A	67108864 bit	-	COMMON	SYNCHRONOUS DRAM	-	4096	1,2,4,8,FP	1,2,4,8	FOUR BANK PAGE BURST	-	YES	22.22 mm	10.16 mm
K4S641632E-TC70 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип K6T4016U3C-RB10 Anlielectronics Тип	Samsung Semiconductor	Standard SRAM, 256KX16, 100ns, CMOS, PDSO44, 0.400 INCH, REVERSE, TSOP2-44 Сборник данных Сравнение	Min.:1 Mult.:1	YES	44	100 ns	-	SAMSUNG SEMICONDUCTOR INC	-	262144 words	256000	70 °C	-	PLASTIC/EPOXY	TSOP2-R	TSOP2-R, TSOP44,.46,32	TSOP44,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP2	No	3 V	-	No	3A991.B.2.A	-	-	8542.32.00.41	DUAL	GULL WING	240	1	0.8 mm	compliant	30	44	R-PDSO-G44	Not Qualified	3.3 V	COMMERCIAL	2.7 V	-	ASYNCHRONOUS	0.045 mA	256KX16	3-STATE	1.2 mm	16	-	4194304 bit	PARALLEL	COMMON	STANDARD SRAM	2 V	-	-	-	-	YES	-	18.41 mm	10.16 mm
K6T4016U3C-RB10 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип KM41C1000DJ-8 Anlielectronics Тип	Samsung Semiconductor	Fast Page DRAM, 1MX1, 80ns, CMOS, PDSO20, SOJ-20 Сборник данных Сравнение	Min.:1 Mult.:1	YES	20	80 ns	-	SAMSUNG SEMICONDUCTOR INC	-	1048576 words	1000000	70 °C	-	PLASTIC/EPOXY	SOJ	SOJ, SOJ20/26,.34	SOJ20/26,.34	RECTANGULAR	SMALL OUTLINE	Obsolete	SOJ	No	5 V	e0	-	EAR99	TIN LEAD	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	8542.32.00.02	DUAL	J BEND	-	1	1.27 mm	unknown	-	20	R-PDSO-J20	Not Qualified	5.5 V	COMMERCIAL	4.5 V	1	ASYNCHRONOUS	0.05 mA	1MX1	3-STATE	3.76 mm	1	0.001 A	1048576 bit	-	SEPARATE	FAST PAGE DRAM	-	512	-	-	FAST PAGE	-	-	17.145 mm	7.62 mm
KM41C1000DJ-8 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип K4S51323LC-MG1L Anlielectronics Тип	Samsung Semiconductor	Synchronous DRAM, 16MX32, 7ns, CMOS, PBGA90, FBGA-90 Сборник данных Сравнение	Min.:1 Mult.:1	YES	90	7 ns	100 MHz	SAMSUNG SEMICONDUCTOR INC	-	16777216 words	16000000	85 °C	-25 °C	PLASTIC/EPOXY	LFBGA	LFBGA, BGA90,9X15,32	BGA90,9X15,32	RECTANGULAR	GRID ARRAY, LOW PROFILE, FINE PITCH	Obsolete	BGA	No	2.5 V	e0	-	EAR99	TIN LEAD	AUTO/SELF REFRESH	8542.32.00.28	BOTTOM	BALL	-	1	0.8 mm	compliant	-	90	R-PBGA-B90	Not Qualified	2.7 V	OTHER	2.3 V	1	SYNCHRONOUS	0.28 mA	16MX32	3-STATE	1.4 mm	32	0.0015 A	536870912 bit	-	COMMON	SYNCHRONOUS DRAM	-	8192	1,2,4,8,FP	1,2,4,8	FOUR BANK PAGE BURST	-	YES	15.5 mm	9.5 mm
K4S51323LC-MG1L Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип KM68V1002BJI-8 Anlielectronics Тип	Samsung Semiconductor	Standard SRAM, 128KX8, 8ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 Сборник данных Сравнение	Min.:1 Mult.:1	YES	32	8 ns	-	SAMSUNG SEMICONDUCTOR INC	-	131072 words	128000	85 °C	-40 °C	PLASTIC/EPOXY	SOJ	SOJ, SOJ32,.44	SOJ32,.44	RECTANGULAR	SMALL OUTLINE	Obsolete	SOJ	No	3.3 V	e0	-	3A991.B.2.B	TIN LEAD	TTL COMPATIBLE INPUTS/OUTPUTS	8542.32.00.41	DUAL	J BEND	-	1	1.27 mm	unknown	-	32	R-PDSO-J32	Not Qualified	3.6 V	INDUSTRIAL	3 V	-	ASYNCHRONOUS	0.16 mA	128KX8	3-STATE	3.76 mm	8	0.005 A	1048576 bit	PARALLEL	COMMON	STANDARD SRAM	3 V	-	-	-	-	-	-	20.96 mm	10.16 mm
KM68V1002BJI-8 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип KM44C16104BK-6 Anlielectronics Тип	Samsung Semiconductor	Description: EDO DRAM, 16MX4, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 Сборник данных Сравнение	Min.:1 Mult.:1	YES	32	60 ns	-	SAMSUNG SEMICONDUCTOR INC	-	16777216 words	16000000	70 °C	-	PLASTIC/EPOXY	SOJ	SOJ, SOJ32,.44	SOJ32,.44	RECTANGULAR	SMALL OUTLINE	Obsolete	SOJ	No	5 V	e0	-	EAR99	TIN LEAD	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	8542.32.00.02	DUAL	J BEND	-	1	1.27 mm	unknown	-	32	R-PDSO-J32	Not Qualified	5.5 V	COMMERCIAL	4.5 V	1	ASYNCHRONOUS	0.11 mA	16MX4	3-STATE	3.76 mm	4	0.001 A	67108864 bit	-	COMMON	EDO DRAM	-	4096	-	-	FAST PAGE WITH EDO	-	NO	20.96 mm	10.16 mm
KM44C16104BK-6 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип KM68V4002BLT-15 Anlielectronics Тип	Samsung Semiconductor	Description: Standard SRAM, 512KX8, 15ns, CMOS, PDSO36, 0.400 INCH, PLASTIC, TSOP2-36 Сборник данных Сравнение	Min.:1 Mult.:1	YES	36	15 ns	-	SAMSUNG SEMICONDUCTOR INC	-	524288 words	512000	70 °C	-	PLASTIC/EPOXY	TSOP	TSOP, TSOP36,.46,40	TSOP36,.46,40	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP2	No	3.3 V	e0	-	3A991.B.2.A	TIN LEAD	-	8542.32.00.41	DUAL	GULL WING	-	1	1 mm	unknown	-	36	R-PDSO-G36	Not Qualified	3.6 V	COMMERCIAL	3 V	-	ASYNCHRONOUS	0.15 mA	512KX8	3-STATE	1.2 mm	8	0.0007 A	4194304 bit	PARALLEL	COMMON	STANDARD SRAM	2 V	-	-	-	-	-	-	18.41 mm	10.16 mm
KM68V4002BLT-15 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип K4X56163PG-FGCA Anlielectronics Тип	Samsung Semiconductor	Description: DDR DRAM, 16MX16, 6ns, CMOS, PBGA60, Сборник данных Сравнение	Min.:1 Mult.:1	YES	60	6 ns	111 MHz	SAMSUNG SEMICONDUCTOR INC	-	16777216 words	16000000	85 °C	-25 °C	PLASTIC/EPOXY	FBGA	FBGA, BGA60,9X10,32	BGA60,9X10,32	RECTANGULAR	GRID ARRAY, FINE PITCH	Obsolete	-	Yes	1.8 V	-	-	EAR99	-	-	8542.32.00.24	BOTTOM	BALL	-	-	0.8 mm	compliant	-	-	R-PBGA-B60	Not Qualified	-	OTHER	-	-	-	0.09 mA	16MX16	3-STATE	-	16	0.0003 A	268435456 bit	-	COMMON	DDR1 DRAM	-	8192	2,4,8,16	2,4,8,16	-	-	-	-	-
K4X56163PG-FGCA Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип K6X1008T2D-TB55 Anlielectronics Тип	Samsung Semiconductor	Description: Standard SRAM, 128KX8, 55ns, CMOS, PDSO32 Сборник данных Сравнение	Min.:1 Mult.:1	YES	32	55 ns	-	SAMSUNG SEMICONDUCTOR INC	-	131072 words	128000	70 °C	-	PLASTIC/EPOXY	TSSOP	TSSOP, TSSOP32,.8,20	TSSOP32,.8,20	RECTANGULAR	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	Obsolete	-	No	3.3 V	e0	-	EAR99	Tin/Lead (Sn/Pb)	-	8542.32.00.41	DUAL	GULL WING	-	-	0.5 mm	compliant	-	-	R-PDSO-G32	Not Qualified	-	COMMERCIAL	-	-	ASYNCHRONOUS	0.02 mA	128KX8	3-STATE	-	8	-	1048576 bit	PARALLEL	COMMON	STANDARD SRAM	2 V	-	-	-	-	-	-	-	-
K6X1008T2D-TB55 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип KM44C4100AT-6 Anlielectronics Тип	Samsung Semiconductor	Fast Page DRAM, 4MX4, 60ns, CMOS, PDSO24, 0.400 INCH, PLASTIC, TSOP2-28/24 Сборник данных Сравнение	Min.:1 Mult.:1	YES	24	60 ns	-	SAMSUNG SEMICONDUCTOR INC	-	4194304 words	4000000	70 °C	-	PLASTIC/EPOXY	TSOP2	TSOP2, TSOP24/28,.46	TSOP24/28,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP2	No	5 V	e0	-	EAR99	Tin/Lead (Sn/Pb)	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	8542.32.00.02	DUAL	GULL WING	-	1	1.27 mm	unknown	-	28/24	R-PDSO-G24	Not Qualified	5.5 V	COMMERCIAL	4.5 V	1	ASYNCHRONOUS	0.1 mA	4MX4	3-STATE	1.2 mm	4	0.001 A	16777216 bit	-	COMMON	FAST PAGE DRAM	-	2048	-	-	FAST PAGE	-	NO	18.41 mm	10.16 mm
KM44C4100AT-6 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -

Integrated Circuits (ICs)

Memory definition: Memory is a component used to store programs and various data information. A memory cell is actually a type of sequential logic circuit. A m... Memory Product Listing: K4H560438E-TCA2,KM416V4104AS-5,K4S56163LF-XN75,K4M64163PH-RF75,K4H511638B-TCA2.Integrated Circuits (ICs) type:Embedded - Microcontrollers(129432),Memory(111901),PMIC - Supervisors(101743),PMIC - Voltage Regulators - Linear(101187),PMIC - Voltage Regulators - DC DC Switching Regulators(62822) .Memory has 1151 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.

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