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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Mounting Type | Package / Case | Surface Mount | Supplier Device Package | Driver Configuration | Logic voltage-VIL, VIH | Operating Temperature | Packaging | Published | Series | JESD-609 Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Supply Voltage | Terminal Pitch | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Base Part Number | JESD-30 Code | Qualification Status | Input Type | Output Characteristics | Output Polarity | Input Characteristics | Rise / Fall Time (Typ) | Interface IC Type | Channel Type | Number of Drivers | Turn On Time | Output Peak Current Limit-Nom | Gate Type | Current - Peak Output (Source, Sink) | High Side Driver | Turn Off Time | Built-in Protections | High Side Voltage - Max (Bootstrap) | Output Current Flow Direction | Height Seated (Max) | Length | Width | RoHS Status |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | Mfr. Тип98-0231Anlielectronics Тип | Infineon Technologies |
IC MOSFET DRIVER HIGH-SIDE 8SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | 8-SOIC | High-Side | 6V 9.5V | -40°C~150°C TJ | Tube | 2004 | - | - | Obsolete | 1 (Unlimited) | - | - | - | - | - | 10V~20V | - | - | - | - | - | - | - | - | IR2118S | - | - | Inverting | - | - | - | 80ns 40ns | - | Single | 1 | - | - | IGBT, N-Channel MOSFET | 250mA 500mA | - | - | - | 600V | - | - | - | - | Non-RoHS Compliant | ||
| 98-0231 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIR21814Anlielectronics Тип | Infineon Technologies |
IC GATE DRVR HALF-BRIDGE 14DIP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Through Hole | 14-DIP (0.300, 7.62mm) | NO | - | Half-Bridge | 0.8V 2.7V | -40°C~150°C TJ | Tube | 1996 | - | - | Obsolete | 1 (Unlimited) | 14 | EAR99 | - | - | - | 10V~20V | DUAL | - | NOT SPECIFIED | 1 | 15V | - | - | NOT SPECIFIED | IR21814 | R-PDIP-T14 | Not Qualified | Non-Inverting | - | - | - | 40ns 20ns | - | Independent | 2 | - | 2.3A | IGBT, N-Channel MOSFET | 1.9A 2.3A | YES | 0.33 μs | - | 600V | - | 5.33mm | 19.305mm | - | Non-RoHS Compliant | ||
| IR21814 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIR21271SAnlielectronics Тип | Infineon Technologies |
IC DRIVER 600V 200/420MA 8-SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | YES | - | High-Side or Low-Side | 0.8V 3V | -40°C~150°C TJ | Tube | 1996 | - | - | Obsolete | 1 (Unlimited) | 8 | EAR99 | - | - | - | 9V~20V | DUAL | GULL WING | NOT SPECIFIED | 1 | 15V | - | - | NOT SPECIFIED | IR21271S | R-PDSO-G8 | Not Qualified | Non-Inverting | - | - | - | 80ns 40ns | BUFFER OR INVERTER BASED MOSFET DRIVER | Single | 1 | 0.25 μs | 0.5A | IGBT, N-Channel MOSFET | 250mA 500mA | YES | 0.2 μs | - | 600V | - | - | 4.9mm | 3.9mm | Non-RoHS Compliant | ||
| IR21271S | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIR2213Anlielectronics Тип | Infineon Technologies |
IC GATE DRVR HALF-BRIDGE 14DIP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Through Hole | 14-DIP (0.300, 7.62mm) | NO | - | Half-Bridge | 6V 9.5V | -55°C~150°C TJ | Tube | 1996 | - | - | Obsolete | 1 (Unlimited) | 14 | EAR99 | - | - | - | 12V~20V | DUAL | - | NOT SPECIFIED | 1 | 15V | - | - | NOT SPECIFIED | IR2213 | R-PDIP-T14 | Not Qualified | Non-Inverting | - | - | - | 25ns 17ns | - | Independent | 2 | - | 2.5A | IGBT, N-Channel MOSFET | 2A 2.5A | YES | - | - | 1200V | - | 5.33mm | 19.305mm | - | Non-RoHS Compliant | ||
| IR2213 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIR2181SAnlielectronics Тип | Infineon Technologies |
IC GATE DRVR HALF-BRIDGE 8SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | YES | - | Half-Bridge | 0.8V 2.7V | -40°C~150°C TJ | Tube | 1996 | - | - | Obsolete | 1 (Unlimited) | 8 | EAR99 | - | - | - | 10V~20V | DUAL | GULL WING | NOT SPECIFIED | 1 | 15V | - | - | NOT SPECIFIED | IR2181S | R-PDSO-G8 | Not Qualified | Non-Inverting | - | - | - | 40ns 20ns | - | Independent | 2 | - | 2.3A | IGBT, N-Channel MOSFET | 1.9A 2.3A | YES | 0.33 μs | - | 600V | - | 1.75mm | 4.9mm | 3.9mm | Non-RoHS Compliant | ||
| IR2181S | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIR2235JAnlielectronics Тип | Infineon Technologies |
IC GATE DRVR HALF-BRIDGE 44PLCC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Surface Mount | 44-LCC (J-Lead), 32 Leads | YES | - | Half-Bridge | 0.8V 2V | 125°C TJ | Tube | 1996 | - | - | Obsolete | 1 (Unlimited) | 32 | EAR99 | - | FLOATING LOAD DRIVER; UNDER VOLTAGE LOCKOUT CIRCUIT | 8542.39.00.01 | 10V~20V | QUAD | J BEND | NOT SPECIFIED | 3 | 15V | 1.27mm | - | NOT SPECIFIED | IR2235J | S-PQCC-J32 | Not Qualified | Inverting | - | - | - | 90ns 40ns | - | 3-Phase | 6 | 1 μs | 0.5A | IGBT, N-Channel MOSFET | 250mA 500mA | YES | 0.95 μs | - | 1200V | - | 4.57mm | - | - | Non-RoHS Compliant | ||
| IR2235J | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIR2085SAnlielectronics Тип | Infineon Technologies |
IC DRVR HALF-BRDG SELF-OSC 8SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | YES | - | Half-Bridge | - | -40°C~150°C TJ | Tube | 2006 | Automotive, AEC-Q100 | - | Obsolete | 1 (Unlimited) | 8 | EAR99 | - | - | - | 10V~15V | DUAL | GULL WING | NOT SPECIFIED | 1 | 12V | - | - | NOT SPECIFIED | IR2085S | R-PDSO-G8 | Not Qualified | RC Input Circuit | - | - | - | 40ns 20ns | - | Independent | 2 | - | 1A | N-Channel MOSFET | 1A 1A | - | - | TRANSIENT; OVER CURRENT; UNDER VOLTAGE | 100V | SOURCE SINK | 1.75mm | 4.9mm | 3.9mm | Non-RoHS Compliant | ||
| IR2085S | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Тип98-0343Anlielectronics Тип | Infineon Technologies |
IC GATE DRVR HALF-BRIDGE 8SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | 8-SOIC | Half-Bridge | 0.8V 2.9V | -40°C~150°C TJ | Tube | 2004 | - | - | Obsolete | 1 (Unlimited) | - | - | - | - | - | 5V~20V | - | - | - | - | - | - | - | - | IR2301S | - | - | Non-Inverting | - | - | - | 130ns 50ns | - | Independent | 2 | - | - | IGBT, N-Channel MOSFET | 200mA 350mA | - | - | - | 600V | - | - | - | - | Non-RoHS Compliant | ||
| 98-0343 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIR2011Anlielectronics Тип | Infineon Technologies |
IC GATE DRV HI-SIDE/LO-SIDE 8DIP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Through Hole | 8-DIP (0.300, 7.62mm) | NO | - | High-Side or Low-Side | 0.7V 2.2V | -40°C~150°C TJ | Tube | 1996 | - | - | Obsolete | 1 (Unlimited) | 8 | EAR99 | - | - | - | 10V~20V | DUAL | - | NOT SPECIFIED | 1 | 15V | - | - | NOT SPECIFIED | IR2011 | R-PDIP-T8 | Not Qualified | Inverting | - | - | - | 35ns 20ns | HALF BRIDGE BASED MOSFET DRIVER | Independent | 2 | - | 1A | N-Channel MOSFET | 1A 1A | YES | - | - | 200V | - | 5.33mm | 9.88mm | - | Non-RoHS Compliant | ||
| IR2011 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIR21271Anlielectronics Тип | Infineon Technologies |
IC GATE DRV HI-SIDE/LO-SIDE 8DIP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Through Hole | 8-DIP (0.300, 7.62mm) | NO | - | High-Side or Low-Side | 0.8V 3V | -40°C~150°C TJ | Tube | 1996 | - | - | Obsolete | 1 (Unlimited) | 8 | EAR99 | - | - | - | 9V~20V | DUAL | - | NOT SPECIFIED | 1 | 15V | 2.54mm | - | NOT SPECIFIED | IR21271 | R-PDIP-T8 | Not Qualified | Non-Inverting | - | - | - | 80ns 40ns | BUFFER OR INVERTER BASED MOSFET DRIVER | Single | 1 | 0.25 μs | 0.5A | IGBT, N-Channel MOSFET | 250mA 500mA | YES | 0.2 μs | - | 600V | - | 5.33mm | 9.88mm | 7.62mm | Non-RoHS Compliant | ||
| IR21271 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIR2302Anlielectronics Тип | Infineon Technologies |
IC GATE DRVR HALF-BRIDGE 8DIP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Through Hole | 8-DIP (0.300, 7.62mm) | NO | - | Half-Bridge | 0.8V 2.9V | -40°C~150°C TJ | Tube | 1996 | - | - | Obsolete | 1 (Unlimited) | 8 | EAR99 | - | FLOATING LOAD DRIVER; UNDER VOLTAGE LOCKOUT CIRCUIT | - | 5V~20V | DUAL | - | NOT SPECIFIED | 1 | 15V | - | - | NOT SPECIFIED | IR2302 | R-PDIP-T8 | Not Qualified | Non-Inverting | - | - | - | 130ns 50ns | - | Synchronous | 2 | 0.95 µs | 0.2A | IGBT, N-Channel MOSFET | 200mA 350mA | YES | - | - | 600V | - | 5.33mm | 9.865mm | - | Non-RoHS Compliant | ||
| IR2302 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIR2011SAnlielectronics Тип | Infineon Technologies |
IC GATE DRVR HI/LOW SIDE 8SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | YES | - | High-Side or Low-Side | 0.7V 2.2V | -40°C~150°C TJ | Tube | 1996 | - | - | Obsolete | 1 (Unlimited) | 8 | EAR99 | - | - | - | 10V~20V | DUAL | GULL WING | NOT SPECIFIED | 1 | 15V | - | - | NOT SPECIFIED | IR2011S | R-PDSO-G8 | Not Qualified | Inverting | - | - | - | 35ns 20ns | HALF BRIDGE BASED MOSFET DRIVER | Independent | 2 | - | 1A | N-Channel MOSFET | 1A 1A | YES | - | - | 200V | - | 1.75mm | 4.9mm | 3.9mm | Non-RoHS Compliant | ||
| IR2011S | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Тип98-0119PBFAnlielectronics Тип | Infineon Technologies |
IC MOSFET DRVR HI/LO SIDE 16DIP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Through Hole | 16-DIP (0.300, 7.62mm), 14 Leads | - | 16-PDIP | Half-Bridge | 6V 9.5V | -40°C~150°C TJ | Tube | 2005 | - | - | Obsolete | 1 (Unlimited) | - | - | - | - | - | 3.3V~20V | - | - | - | - | - | - | - | - | IR2113-2PBF | - | - | Non-Inverting | - | - | - | 25ns 17ns | - | Independent | 2 | - | - | IGBT, N-Channel MOSFET | 2A 2A | - | - | - | 600V | - | - | - | - | - | ||
| 98-0119PBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIR1167BSPBFAnlielectronics Тип | Infineon Technologies |
IC MOSFET DRIVER N-CHAN 8-SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | YES | - | Low-Side | 2V 2.15V | -25°C~125°C TJ | Tube | 2006 | SmartRectifier™ | e3 | Obsolete | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | - | - | 12V~18V | DUAL | GULL WING | 260 | 1 | 15V | - | compliant | 30 | IR1167BSPBF | R-PDSO-G8 | Not Qualified | Non-Inverting | - | - | - | 18ns 10ns | BUFFER OR INVERTER BASED MOSFET DRIVER | Single | 1 | 0.08 µs | 7A | N-Channel MOSFET | 2A 7A | NO | 0.065 µs | - | - | - | - | 4.9mm | 3.9mm | RoHS Compliant | ||
| IR1167BSPBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипTLE9180D21QKXUMA1Anlielectronics Тип | Infineon Technologies |
DRIVER_IC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 39 Weeks | Surface Mount | 64-LQFP Exposed Pad | - | - | Half-Bridge | - | -40°C~150°C TJ | Tape & Reel (TR) | - | - | - | Active | - | - | - | - | - | - | 5.5V~60V | - | - | - | - | - | - | - | - | - | - | - | TTL | - | - | - | - | - | 3-Phase | 6 | - | - | N-Channel MOSFET | 1A 1A | - | - | - | - | - | - | - | - | - | ||
| TLE9180D21QKXUMA1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIR3598MTR1PBFAnlielectronics Тип | Infineon Technologies |
IC GATE DRVR HALF-BRIDGE 16QFN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Surface Mount | 16-VFQFN Exposed Pad | - | 16-QFN (3x3) | Half-Bridge | 0.7V 1.3V | 0°C~150°C TJ | Tape & Reel (TR) | 2011 | - | - | Obsolete | 1 (Unlimited) | - | - | - | - | - | 4.5V~5.5V | - | - | - | - | - | - | - | - | IR3598MPBF | - | - | Non-Inverting | - | - | - | 15ns 12ns | - | Synchronous | 4 | - | - | N-Channel MOSFET | - | - | - | - | - | - | - | - | - | - | ||
| IR3598MTR1PBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипAUIR3240SAnlielectronics Тип | Infineon Technologies |
IC MFET DRVR HIGH SIDE 8SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | - | High-Side | 0.9V 2.5V | -40°C~150°C TJ | Tube | 2000 | Automotive, AEC-Q100 | - | Obsolete | 2 (1 Year) | - | - | - | - | - | 4V~36V | - | - | NOT SPECIFIED | - | - | - | compliant | NOT SPECIFIED | - | - | - | Non-Inverting | - | - | - | - | BUFFER OR INVERTER BASED MOSFET DRIVER | Single | 1 | - | - | N-Channel MOSFET | - | - | - | - | - | - | - | - | - | RoHS Compliant | ||
| AUIR3240S | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIR2106Anlielectronics Тип | Infineon Technologies |
IC GATE DRVR HALF-BRIDGE 8DIP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Through Hole | 8-DIP (0.300, 7.62mm) | NO | - | Half-Bridge | 0.8V 2.9V | -40°C~150°C TJ | Tube | 1996 | - | - | Obsolete | 1 (Unlimited) | 8 | EAR99 | - | FLOATING LOAD DRIVER; UNDER VOLTAGE LOCKOUT CIRCUIT | - | 10V~20V | DUAL | - | NOT SPECIFIED | 1 | 15V | - | - | NOT SPECIFIED | IR2106 | R-PDIP-T8 | Not Qualified | Non-Inverting | - | - | - | 150ns 50ns | - | Independent | 2 | 0.3 µs | 0.35A | IGBT, N-Channel MOSFET | 200mA 350mA | YES | - | - | 600V | - | 5.33mm | 9.88mm | - | Non-RoHS Compliant | ||
| IR2106 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIR2136Anlielectronics Тип | Infineon Technologies |
IC GATE DRVR HALF-BRIDGE 28DIP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Through Hole | 28-DIP (0.600, 15.24mm) | NO | - | Half-Bridge | 0.8V 3V | -40°C~150°C TJ | Tube | 1996 | - | - | Obsolete | 1 (Unlimited) | 28 | EAR99 | - | FLOATING LOAD DRIVER; UNDER VOLTAGE LOCKOUT CIRCUIT | 8542.39.00.01 | 10V~20V | DUAL | - | NOT SPECIFIED | 1 | 15V | 2.54mm | - | NOT SPECIFIED | IR2136 | R-PDIP-T28 | Not Qualified | Inverting | - | - | - | 125ns 50ns | - | 3-Phase | 6 | 0.55 µs | 0.35A | IGBT, N-Channel MOSFET | 200mA 350mA | YES | 0.55 µs | - | 600V | - | - | 37.405mm | 15.24mm | Non-RoHS Compliant | ||
| IR2136 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIR2103Anlielectronics Тип | Infineon Technologies |
IC GATE DRVR HALF-BRIDGE 8DIP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Through Hole | 8-DIP (0.300, 7.62mm) | NO | - | Half-Bridge | 0.8V 3V | -40°C~150°C TJ | Tube | 1996 | - | - | Obsolete | 1 (Unlimited) | 8 | EAR99 | - | - | - | 10V~20V | DUAL | - | NOT SPECIFIED | 1 | 15V | - | - | NOT SPECIFIED | IR2103 | R-PDIP-T8 | Not Qualified | Inverting, Non-Inverting | TOTEM-POLE | TRUE | SCHMITT TRIGGER | 100ns 50ns | - | Independent | 2 | - | 0.36A | IGBT, N-Channel MOSFET | 210mA 360mA | YES | - | - | 600V | - | 5.33mm | 9.88mm | - | Non-RoHS Compliant | ||
| IR2103 |
Индекс :
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