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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Mounting Type | Package / Case | Surface Mount | Driver Configuration | Logic voltage-VIL, VIH | Usage Level | Operating Temperature | Packaging | Published | JESD-609 Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Terminal Finish | HTS Code | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Supply Voltage | Terminal Pitch | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | JESD-30 Code | Qualification Status | Output Voltage | Output Current | Input Type | Rise Time | Rise / Fall Time (Typ) | Interface IC Type | Channel Type | Number of Drivers | Turn On Time | Negative Supply Voltage-Nom | Output Peak Current Limit-Nom | Gate Type | Current - Peak Output (Source, Sink) | High Side Driver | Turn Off Time | High Side Voltage - Max (Bootstrap) | Height Seated (Max) | Length | Width | RoHS Status |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипHIP4086ABZAnlielectronics Тип | Renesas Electronics America Inc. |
Driver 1.5A 6-OUT High and Low Side 3-Phase Brdg Inv/Non-Inv Automotive 24-Pin SOIC W Tube
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Surface Mount | 24-SOIC (0.295, 7.50mm Width) | YES | Half-Bridge | 1V 2.5V | Automotive grade | -40°C~150°C TJ | Tube | 1999 | e3 | Active | 3 (168 Hours) | 24 | EAR99 | Matte Tin (Sn) | 8542.39.00.01 | 7V~15V | DUAL | GULL WING | NOT SPECIFIED | 1 | 12V | 1.27mm | NOT SPECIFIED | HIP4086 | 24 | R-PDSO-G24 | - | 101V | 500mA | Inverting, Non-Inverting | 20ns | 20ns 10ns | - | 3-Phase | 6 | 0.158 μs | - | - | N-Channel MOSFET | 500mA 500mA | YES | 0.135 μs | 95V | - | 15.4mm | 7.5mm | ROHS3 Compliant | ||
| HIP4086ABZ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипEL7242CSZ-T7Anlielectronics Тип | Renesas Electronics America Inc. |
IC GATE DRVR LOW-SIDE 8SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 15 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | YES | Low-Side | 0.8V 2.4V | Industrial grade | -40°C~125°C TJ | Cut Tape (CT) | 2002 | e3 | Active | 3 (168 Hours) | 8 | EAR99 | Matte Tin (Sn) - annealed | - | 4.5V~16V | DUAL | GULL WING | NOT SPECIFIED | 2 | 15V | - | NOT SPECIFIED | EL7242 | 8 | R-PDSO-G8 | - | - | - | Inverting, Non-Inverting | - | 10ns 10ns | AND GATE BASED MOSFET DRIVER | Independent | 2 | - | - | 2A | N-Channel, P-Channel MOSFET | 2A 2A | NO | - | - | - | - | 3.9116mm | ROHS3 Compliant | ||
| EL7242CSZ-T7 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипHIP4082IBZTAnlielectronics Тип | Renesas Electronics America Inc. |
IC DRIVER FET H-BRDG 80V 16-SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 9 Weeks | Surface Mount | 16-SOIC (0.154, 3.90mm Width) | YES | Half-Bridge | 1V 2.5V | Industrial grade | -55°C~150°C TJ | Tape & Reel (TR) | 1994 | e3 | Active | 3 (168 Hours) | 16 | EAR99 | Matte Tin (Sn) - annealed | - | 8.5V~15V | DUAL | GULL WING | NOT SPECIFIED | 1 | 12V | 1.27mm | NOT SPECIFIED | HIP4082 | 16 | R-PDSO-G16 | - | - | - | Non-Inverting | - | 9ns 9ns | FULL BRIDGE BASED MOSFET DRIVER | Independent | 4 | 0.15 μs | - | - | N-Channel MOSFET | 1.4A 1.3A | YES | 0.1 μs | 95V | 1.75mm | 9.9mm | 3.9mm | ROHS3 Compliant | ||
| HIP4082IBZT | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипEL7156CSZAnlielectronics Тип | Renesas Electronics America Inc. |
EL7156 Series 3.5 A 16.5 V 40 MHz 3.5 Ohm 3 State Pin Driver - SOIC-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 19 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | YES | High-Side or Low-Side | 0.8V 2.4V | Industrial grade | -40°C~125°C TJ | Tube | 2002 | e3 | Active | 3 (168 Hours) | 8 | EAR99 | Matte Tin (Sn) - annealed | - | 4.5V~16.5V | DUAL | GULL WING | NOT SPECIFIED | 1 | 5V | - | NOT SPECIFIED | EL7156 | 8 | R-PDSO-G8 | - | 16.5V | 3.5A | Non-Inverting | - | 14.5ns 15ns | HALF BRIDGE BASED PERIPHERAL DRIVER | Single | 1 | - | -5V | 3.5A | IGBT | 3.5A 3.5A | - | - | - | - | 4.9022mm | - | ROHS3 Compliant | ||
| EL7156CSZ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипHIP2101IBZAnlielectronics Тип | Renesas Electronics America Inc. |
IC GATE DRVR HALF-BRIDGE 8SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 11 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | YES | Half-Bridge | 0.8V 2.2V | Industrial grade | -55°C~150°C TJ | Tube | 2001 | e3 | Active | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) - annealed | - | 9V~14V | DUAL | GULL WING | NOT SPECIFIED | 1 | 12V | - | NOT SPECIFIED | HIP2101 | 8 | R-PDSO-G8 | - | - | - | Non-Inverting | - | 10ns 10ns | - | Independent | 2 | 0.056 µs | - | - | N-Channel MOSFET | 2A 2A | YES | 0.056 µs | 114V | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | ||
| HIP2101IBZ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипHIP2100EIBZAnlielectronics Тип | Renesas Electronics America Inc. |
HIP2100 Series 100V/2A Peak, Low Cost, High FreqHalf Bridge Driver-SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 9 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) Exposed Pad | YES | Half-Bridge | 4V 7V | Industrial grade | -55°C~150°C TJ | Tube | 2001 | e3 | Active | 2 (1 Year) | 8 | EAR99 | Matte Tin (Sn) - annealed | - | 9V~14V | DUAL | GULL WING | NOT SPECIFIED | 1 | 12V | - | NOT SPECIFIED | HIP2100 | 8 | R-PDSO-G8 | - | - | - | Non-Inverting | - | 10ns 10ns | - | Independent | 2 | 0.045 µs | - | - | N-Channel MOSFET | 2A 2A | YES | 0.045 µs | 114V | 1.68mm | 4.89mm | 3.9mm | ROHS3 Compliant | ||
| HIP2100EIBZ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипHIP4080AIBZAnlielectronics Тип | Renesas Electronics America Inc. |
IC GATE DRVR HALF-BRIDGE 20SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | Surface Mount | 20-SOIC (0.295, 7.50mm Width) | - | Half-Bridge | 1V 2.5V | Industrial grade | -40°C~125°C TJ | Tube | 2004 | e3 | Active | 2 (1 Year) | - | - | Matte Tin (Sn) - annealed | - | 9.5V~15V | - | - | NOT SPECIFIED | - | - | - | NOT SPECIFIED | HIP4080A | 20 | - | - | 86.3V | 2.5A | Non-Inverting | - | 10ns 10ns | FULL BRIDGE BASED MOSFET DRIVER | Synchronous | 4 | - | - | - | N-Channel MOSFET | 2.6A 2.4A | - | - | 95V | - | - | - | ROHS3 Compliant | ||
| HIP4080AIBZ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипHIP4081AIPZAnlielectronics Тип | Renesas Electronics America Inc. |
MOSFET DRVR 2.5A 4-OUT Hi/Lo Side Full Brdg/Half Brdg Inv/Non-Inv 20-Pin PDIP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 11 Weeks | Through Hole | 20-DIP (0.300, 7.62mm) | NO | Half-Bridge | 1V 2.5V | - | -40°C~125°C TJ | Tube | 1993 | - | Active | 1 (Unlimited) | 20 | EAR99 | - | - | 9.5V~15V | DUAL | - | NOT SPECIFIED | 1 | 12V | - | NOT SPECIFIED | HIP4081A | 20 | R-PDIP-T20 | - | 86.3V | 2.5A | Non-Inverting | - | 10ns 10ns | FULL BRIDGE BASED MOSFET DRIVER | Independent | 4 | 110 µs | - | - | N-Channel MOSFET | 2.6A 2.4A | YES | 90 µs | 95V | 5.33mm | 25.895mm | 7.62mm | ROHS3 Compliant | ||
| HIP4081AIPZ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипHIP4080AIPZAnlielectronics Тип | Renesas Electronics America Inc. |
IC DRIVER FET FULL BRIDGE 20DIP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 9 Weeks | Through Hole | 20-DIP (0.300, 7.62mm) | - | Half-Bridge | 1V 2.5V | - | -40°C~125°C TJ | Tube | 2004 | e3 | Active | 1 (Unlimited) | - | - | Matte Tin (Sn) | - | 9.5V~15V | - | - | NOT SPECIFIED | - | - | - | NOT SPECIFIED | HIP4080A | 20 | - | - | 11.5V | - | Non-Inverting | - | 10ns 10ns | FULL BRIDGE BASED MOSFET DRIVER | Synchronous | 4 | - | - | - | N-Channel MOSFET | 2.6A 2.4A | - | - | 95V | - | - | - | ROHS3 Compliant | ||
| HIP4080AIPZ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипEL7457CUZ-T7Anlielectronics Тип | Renesas Electronics America Inc. |
IC GATE DRVR HI/LOW SIDE 16QSOP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | 16-SSOP (0.154, 3.90mm Width) | YES | High-Side or Low-Side | 0.8V 2V | Industrial grade | -40°C~85°C TA | Cut Tape (CT) | - | e3 | Active | 2 (1 Year) | 16 | EAR99 | Matte Tin (Sn) - annealed | - | 4.5V~18V | DUAL | GULL WING | 260 | 4 | 5V | 0.635mm | 30 | EL7457 | 16 | R-PDSO-G16 | - | - | - | Non-Inverting | - | 13.5ns 13ns | BUFFER OR INVERTER BASED MOSFET DRIVER | Independent | 4 | - | -5V | - | N-Channel, P-Channel MOSFET | 2A 2A | YES | - | - | 1.72mm | - | 3.91mm | ROHS3 Compliant | ||
| EL7457CUZ-T7 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипISL6612ACBZ-TAnlielectronics Тип | Renesas Electronics America Inc. |
IC GATE DRVR HALF-BRIDGE 8SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | Half-Bridge | - | Commercial grade | 0°C~125°C TJ | Tape & Reel (TR) | - | e3 | Active | 3 (168 Hours) | - | - | Matte Tin (Sn) | - | 10.8V~13.2V | - | - | NOT SPECIFIED | - | - | - | NOT SPECIFIED | ISL6612A | 8 | - | - | - | - | Non-Inverting | - | 26ns 18ns | - | Synchronous | 2 | - | - | - | N-Channel MOSFET | 1.25A 2A | - | - | 36V | - | - | - | ROHS3 Compliant | ||
| ISL6612ACBZ-T | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипEL7155CSZ-T7AAnlielectronics Тип | Renesas Electronics America Inc. |
IC GATE DRVR HI/LOW SIDE 8SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 18 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | High-Side or Low-Side | 0.8V 2.4V | Industrial grade | -40°C~125°C TJ | Tape & Reel (TR) | - | e3 | Active | 3 (168 Hours) | - | EAR99 | MATTE TIN | - | 4.5V~16.5V | - | - | NOT SPECIFIED | - | - | - | NOT SPECIFIED | - | 8 | - | - | - | 200mA | Non-Inverting | - | 14.5ns 15ns | HALF BRIDGE BASED PERIPHERAL DRIVER | Synchronous | 2 | - | - | - | IGBT | 3.5A 3.5A | - | - | - | - | - | - | ROHS3 Compliant | ||
| EL7155CSZ-T7A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипHIP2101EIBZAnlielectronics Тип | Renesas Electronics America Inc. |
HIP2101 Series 14 V 2 A Low Cost High Frequency Half Bridge Driver - SOIC-8EP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 13 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) Exposed Pad | YES | Half-Bridge | 0.8V 2.2V | Industrial grade | -55°C~150°C TJ | Tube | 2001 | e3 | Active | 2 (1 Year) | 8 | EAR99 | Matte Tin (Sn) - annealed | - | 9V~14V | DUAL | GULL WING | NOT SPECIFIED | 1 | 12V | - | NOT SPECIFIED | HIP2101 | 8 | R-PDSO-G8 | - | - | - | Non-Inverting | - | 10ns 10ns | - | Independent | 2 | 0.056 µs | - | - | N-Channel MOSFET | 2A 2A | YES | 0.056 µs | 114V | 1.68mm | 4.89mm | 3.9mm | ROHS3 Compliant | ||
| HIP2101EIBZ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипISL89163FBEBZAnlielectronics Тип | Renesas Electronics America Inc. |
IC GATE DRVR LOW-SIDE 8SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) Exposed Pad | - | Low-Side | 1.85V 3.15V | Industrial grade | -40°C~125°C TJ | Tube | - | e3 | Active | 1 (Unlimited) | - | EAR99 | Matte Tin (Sn) | - | 4.5V~16V | - | - | NOT SPECIFIED | - | - | - | NOT SPECIFIED | ISL89163 | 8 | - | - | - | - | Non-Inverting | - | 20ns 20ns | AND GATE BASED MOSFET DRIVER | Independent | 2 | - | - | - | N-Channel MOSFET | 6A 6A | - | - | - | - | - | - | ROHS3 Compliant | ||
| ISL89163FBEBZ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипISL6208IRZAnlielectronics Тип | Renesas Electronics America Inc. |
IC MOSFET DRVR SYNC BUCK 8-QFN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 8-VQFN Exposed Pad | - | Half-Bridge | 0.5V 2V | Commercial grade | -40°C~125°C TJ | Tube | 2001 | e3 | Active | 2 (1 Year) | - | - | Matte Tin (Sn) | - | 4.5V~5.5V | - | - | NOT SPECIFIED | - | - | - | NOT SPECIFIED | ISL6208 | 8 | - | - | - | - | Non-Inverting | - | 8ns 8ns | - | Synchronous | 2 | - | - | - | N-Channel MOSFET | 2A 2A | - | - | 33V | - | - | - | ROHS3 Compliant | ||
| ISL6208IRZ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипISL6208CRZ-TAnlielectronics Тип | Renesas Electronics America Inc. |
IC GATE DRVR HALF-BRIDGE 8QFN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 8-VQFN Exposed Pad | YES | Half-Bridge | 0.5V 2V | Commercial grade | -10°C~125°C TJ | Tape & Reel (TR) | 2012 | e3 | Active | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) - annealed | - | 4.5V~5.5V | QUAD | NO LEAD | 260 | 1 | 5V | 0.65mm | 30 | ISL6208 | 8 | S-PQCC-N8 | Not Qualified | - | - | Non-Inverting | - | 8ns 8ns | - | Synchronous | 2 | 0.03 µs | - | 4A | N-Channel MOSFET | 2A 2A | YES | - | 33V | 1mm | 3mm | 3mm | ROHS3 Compliant | ||
| ISL6208CRZ-T | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипISL6208BCRZ-TAnlielectronics Тип | Renesas Electronics America Inc. |
IC GATE DRVR HALF-BRIDGE 8DFN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 8-VFDFN Exposed Pad | - | Half-Bridge | 0.5V 2V | Commercial grade | -10°C~125°C TJ | Tape & Reel (TR) | - | e3 | Active | 3 (168 Hours) | - | - | Matte Tin (Sn) | - | 4.5V~5.5V | - | - | NOT SPECIFIED | - | - | - | NOT SPECIFIED | ISL6208 | 8 | - | - | - | - | Non-Inverting | - | 8ns 8ns | - | Synchronous | 2 | - | - | - | N-Channel MOSFET | 2A 2A | - | - | 33V | - | - | - | ROHS3 Compliant | ||
| ISL6208BCRZ-T | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипHIP2103FRTAAZAnlielectronics Тип | Renesas Electronics America Inc. |
IC GATE DRVR HALF-BRIDGE 8TDFN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 8-WDFN Exposed Pad | - | Half-Bridge | 1.63V 2.06V | - | -40°C~125°C TJ | Tube | - | e3 | Active | 3 (168 Hours) | - | - | Matte Tin (Sn) | - | 4.5V~14V | - | - | NOT SPECIFIED | - | - | - | NOT SPECIFIED | - | 8 | - | - | - | - | Non-Inverting | - | 8ns 2ns | - | Independent | 2 | - | - | - | N-Channel MOSFET | 1A 1A | - | - | 60V | - | - | - | ROHS3 Compliant | ||
| HIP2103FRTAAZ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипISL6612CRZAnlielectronics Тип | Renesas Electronics America Inc. |
IC MOSFET DRVR SYNC BUCK 10-DFN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 15 Weeks | Surface Mount | 10-VFDFN Exposed Pad | - | Half-Bridge | - | Commercial grade | 0°C~125°C TJ | Tube | - | e3 | Active | 2 (1 Year) | - | EAR99 | Matte Tin (Sn) - annealed | - | 10.8V~13.2V | - | - | NOT SPECIFIED | - | - | - | NOT SPECIFIED | ISL6612 | 10 | - | - | - | - | Non-Inverting | - | 26ns 18ns | - | Synchronous | 2 | - | - | - | N-Channel MOSFET | 1.25A 2A | - | - | 36V | - | - | - | ROHS3 Compliant | ||
| ISL6612CRZ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипISL6208CBZ-TAnlielectronics Тип | Renesas Electronics America Inc. |
IC MOSFET DRVR SYNC BUCK 8-SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | YES | Half-Bridge | 0.5V 2V | Commercial grade | -10°C~125°C TJ | Tape & Reel (TR) | - | e3 | Active | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) - annealed | - | 4.5V~5.5V | DUAL | GULL WING | 260 | 1 | 5V | - | 30 | ISL6208 | 8 | R-PDSO-G8 | Not Qualified | - | - | Non-Inverting | - | 8ns 8ns | - | Synchronous | 2 | 0.03 µs | - | 4A | N-Channel MOSFET | 2A 2A | YES | - | 33V | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | ||
| ISL6208CBZ-T |
Индекс :
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