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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Mounting Type | Package / Case | Surface Mount | Driver Configuration | Logic voltage-VIL, VIH | Usage Level | Operating Temperature | Packaging | Published | JESD-609 Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Terminal Finish | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Supply Voltage | Frequency | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | JESD-30 Code | Output Voltage | Output Current | Input Type | Rise Time | Rise / Fall Time (Typ) | Interface IC Type | Channel Type | Number of Drivers | Turn On Time | Negative Supply Voltage-Nom | Output Peak Current Limit-Nom | Gate Type | Current - Peak Output (Source, Sink) | High Side Driver | Turn Off Time | High Side Voltage - Max (Bootstrap) | Height Seated (Max) | Length | Width | RoHS Status |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипICL7667CBAZA-TAnlielectronics Тип | Renesas Electronics America Inc. |
IC GATE DRVR HI/LOW SIDE 8SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | YES | High-Side or Low-Side | 0.8V 2V | Commercial grade | 0°C~70°C TA | Cut Tape (CT) | 1999 | - | Active | 1 (Unlimited) | 8 | - | - | 4.5V~15V | DUAL | GULL WING | - | 2 | - | - | - | ICL7667 | 8 | R-PDSO-G8 | - | - | Inverting | - | 20ns 20ns | BUFFER OR INVERTER BASED MOSFET DRIVER | Independent | 2 | - | - | - | N-Channel MOSFET | - | NO | - | - | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | ||
| ICL7667CBAZA-T | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипEL7242CSZAnlielectronics Тип | Renesas Electronics America Inc. |
IC GATE DRVR LOW-SIDE 8SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 15 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | YES | Low-Side | 0.8V 2.4V | Industrial grade | -40°C~125°C TJ | Tube | 2002 | e3 | Active | 3 (168 Hours) | 8 | EAR99 | Matte Tin (Sn) - annealed | 4.5V~16V | DUAL | GULL WING | NOT SPECIFIED | 2 | 15V | 10MHz | NOT SPECIFIED | EL7242 | 8 | R-PDSO-G8 | 16.5V | - | Inverting, Non-Inverting | 10ns | 10ns 10ns | AND GATE BASED MOSFET DRIVER | Independent | 2 | - | - | 2A | N-Channel, P-Channel MOSFET | 2A 2A | NO | - | - | - | - | 3.9116mm | ROHS3 Compliant | ||
| EL7242CSZ | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипISL6614ACBZAnlielectronics Тип | Renesas Electronics America Inc. |
IC GATE DRVR HALF-BRIDGE 14SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | 14-SOIC (0.154, 3.90mm Width) | - | Half-Bridge | - | - | 0°C~125°C TJ | Tube | - | e3 | Active | 3 (168 Hours) | - | EAR99 | Matte Tin (Sn) - annealed | 10.8V~13.2V | - | - | - | - | - | - | - | ISL6614A | 14 | - | - | - | Non-Inverting | - | 26ns 18ns | - | Synchronous | 4 | - | - | - | N-Channel MOSFET | 1.25A 2A | - | - | 36V | - | - | - | ROHS3 Compliant | ||
| ISL6614ACBZ | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипEL7155CSZAnlielectronics Тип | Renesas Electronics America Inc. |
IC GATE DRVR HI/LOW SIDE 8SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 19 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | High-Side or Low-Side | 0.8V 2.4V | Industrial grade | -40°C~125°C TJ | Tube | - | e3 | Active | 3 (168 Hours) | - | EAR99 | MATTE TIN | 4.5V~16.5V | - | - | NOT SPECIFIED | - | - | - | NOT SPECIFIED | EL7155 | 8 | - | 16.5V | - | Non-Inverting | - | 14.5ns 15ns | HALF BRIDGE BASED PERIPHERAL DRIVER | Synchronous | 2 | - | - | - | IGBT | 3.5A 3.5A | - | - | - | - | - | - | ROHS3 Compliant | ||
| EL7155CSZ | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипISL2100AAR3ZAnlielectronics Тип | Renesas Electronics America Inc. |
IC DVR HALF-BRDG HF 100V 2A 9DFN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 9-VFDFN Exposed Pad | - | Half-Bridge | 3.7V 7.4V | Industrial grade | -40°C~125°C TJ | Tube | - | e3 | Active | 2 (1 Year) | - | EAR99 | Matte Tin (Sn) - annealed | 9V~14V | - | - | NOT SPECIFIED | - | - | - | NOT SPECIFIED | ISL2100A | 9 | - | - | - | Non-Inverting | - | 10ns 10ns | - | Independent | 2 | - | - | - | N-Channel MOSFET | 2A 2A | - | - | 114V | - | - | - | ROHS3 Compliant | ||
| ISL2100AAR3Z | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипISL89166FBEAZAnlielectronics Тип | Renesas Electronics America Inc. |
IC GATE DRVR LOW-SIDE 8SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Surface Mount | 8-SOIC (0.154, 3.90mm Width) Exposed Pad | - | Low-Side | 1.22V 2.08V | Industrial grade | -40°C~125°C TJ | Tube | - | e3 | Obsolete | 1 (Unlimited) | - | - | Matte Tin (Sn) | 4.5V~16V | - | - | NOT SPECIFIED | - | - | - | NOT SPECIFIED | ISL89166 | - | - | - | - | Non-Inverting | - | 20ns 20ns | AND GATE BASED MOSFET DRIVER | Independent | 2 | - | - | - | N-Channel MOSFET | 6A 6A | - | - | - | - | - | - | ROHS3 Compliant | ||
| ISL89166FBEAZ | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипISL6208BIRZ-TAnlielectronics Тип | Renesas Electronics America Inc. |
IC MOSFET DRVR SYNC BUCK 8DFN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 8-VFDFN Exposed Pad | - | Half-Bridge | 0.5V 2V | - | -40°C~125°C TJ | Tape & Reel (TR) | - | e3 | Active | 1 (Unlimited) | - | - | MATTE TIN | 4.5V~5.5V | - | - | NOT SPECIFIED | - | - | - | NOT SPECIFIED | ISL6208 | 8 | - | - | - | Non-Inverting | - | 8ns 8ns | - | Synchronous | 2 | - | - | - | N-Channel MOSFET | 2A 2A | - | - | 33V | - | - | - | ROHS3 Compliant | ||
| ISL6208BIRZ-T | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипISL6612AIBZAnlielectronics Тип | Renesas Electronics America Inc. |
IC GATE DRVR HALF-BRIDGE 8SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 5 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | Half-Bridge | - | - | -40°C~125°C TJ | Tube | 2001 | e3 | Active | 3 (168 Hours) | - | - | Matte Tin (Sn) | 10.8V~13.2V | - | - | NOT SPECIFIED | - | - | - | NOT SPECIFIED | ISL6612A | 8 | - | - | - | Non-Inverting | - | 26ns 18ns | - | Synchronous | 2 | - | - | - | N-Channel MOSFET | 1.25A 2A | - | - | 36V | - | - | - | ROHS3 Compliant | ||
| ISL6612AIBZ | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипEL7158ISZAnlielectronics Тип | Renesas Electronics America Inc. |
IC GATE DRVR HI/LOW SIDE 8SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 11 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | High-Side or Low-Side | 0.8V 2.4V | Industrial grade | -40°C~125°C TJ | Tube | 2003 | e3 | Active | 3 (168 Hours) | - | EAR99 | Matte Tin (Sn) - annealed | 4.5V~12V | - | - | NOT SPECIFIED | - | - | - | NOT SPECIFIED | EL7158 | 8 | - | 12V | 12A | Non-Inverting | - | 12ns 12.2ns | HALF BRIDGE BASED PERIPHERAL DRIVER | Single | 1 | - | - | - | IGBT | 12A 12A | - | - | - | - | - | - | ROHS3 Compliant | ||
| EL7158ISZ | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипISL6208CRZAnlielectronics Тип | Renesas Electronics America Inc. |
IC GATE DRVR HALF-BRIDGE 8QFN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 8-VQFN Exposed Pad | - | Half-Bridge | 0.5V 2V | Commercial grade | -10°C~125°C TJ | Tube | 2001 | e3 | Active | 1 (Unlimited) | - | - | Matte Tin (Sn) | 4.5V~5.5V | - | - | NOT SPECIFIED | - | - | - | NOT SPECIFIED | ISL6208 | 8 | - | - | - | Non-Inverting | - | 8ns 8ns | - | Synchronous | 2 | - | - | - | N-Channel MOSFET | 2A 2A | - | - | 33V | - | - | - | ROHS3 Compliant | ||
| ISL6208CRZ | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипEL7212CSZ-T7Anlielectronics Тип | Renesas Electronics America Inc. |
IC MOSFET DRIVER DUAL HS 8-SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 15 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | YES | Low-Side | 0.8V 2.4V | Industrial grade | -40°C~125°C TJ | Cut Tape (CT) | 2002 | e3 | Active | 3 (168 Hours) | 8 | EAR99 | Matte Tin (Sn) - annealed | 4.5V~15V | DUAL | GULL WING | NOT SPECIFIED | 1 | - | - | NOT SPECIFIED | EL7212 | 8 | R-PDSO-G8 | - | - | Inverting | - | 7.5ns 10ns | BUFFER OR INVERTER BASED MOSFET DRIVER | Independent | 2 | - | - | 2A | N-Channel, P-Channel MOSFET | 2A 2A | NO | - | - | - | 4.9mm | 3.911mm | ROHS3 Compliant | ||
| EL7212CSZ-T7 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипEL7155CSZ-T7Anlielectronics Тип | Renesas Electronics America Inc. |
IC GATE DRVR HI/LOW SIDE 8SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 18 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | High-Side or Low-Side | 0.8V 2.4V | Industrial grade | -40°C~125°C TJ | Tape & Reel (TR) | 2002 | e3 | Active | 3 (168 Hours) | - | EAR99 | MATTE TIN | 4.5V~16.5V | - | - | NOT SPECIFIED | - | - | - | NOT SPECIFIED | EL7155 | 8 | - | 16V | 200mA | Non-Inverting | - | 14.5ns 15ns | HALF BRIDGE BASED PERIPHERAL DRIVER | Synchronous | 2 | - | - | - | IGBT | 3.5A 3.5A | - | - | - | - | - | - | ROHS3 Compliant | ||
| EL7155CSZ-T7 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипISL95808HRZ-TAnlielectronics Тип | Renesas Electronics America Inc. |
IC GATE DRVR HALF-BRIDGE 8DFN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | 8-VFDFN Exposed Pad | - | Half-Bridge | - | Commercial grade | -10°C~125°C TJ | Tape & Reel (TR) | 2001 | e3 | Active | 1 (Unlimited) | - | - | MATTE TIN | 4.5V~5.5V | - | - | NOT SPECIFIED | - | - | - | NOT SPECIFIED | - | 8 | - | - | - | Non-Inverting | - | 8ns 8ns | - | Synchronous | 2 | - | - | - | N-Channel MOSFET | 2A 2A | - | - | 33V | - | - | - | ROHS3 Compliant | ||
| ISL95808HRZ-T | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипHIP6601BCBZAnlielectronics Тип | Renesas Electronics America Inc. |
IC GATE DRVR HALF-BRIDGE 8SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | YES | Half-Bridge | - | - | 0°C~125°C TJ | Tube | - | e3 | Obsolete | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 10.8V~13.2V | DUAL | GULL WING | NOT SPECIFIED | 1 | 12V | - | NOT SPECIFIED | HIP6601B | 8 | R-PDSO-G8 | - | - | Non-Inverting | - | 20ns 20ns | - | Synchronous | 2 | - | - | - | N-Channel MOSFET | - | YES | - | 15V | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | ||
| HIP6601BCBZ | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипISL6208IBZAnlielectronics Тип | Renesas Electronics America Inc. |
IC MOSFET DRVR SYNC BUCK 8-SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | Half-Bridge | 0.5V 2V | Commercial grade | -40°C~125°C TJ | Tube | 2001 | e3 | Active | 3 (168 Hours) | - | - | Matte Tin (Sn) - annealed | 4.5V~5.5V | - | - | NOT SPECIFIED | - | - | - | NOT SPECIFIED | ISL6208 | 8 | - | - | - | Non-Inverting | - | 8ns 8ns | - | Synchronous | 2 | - | - | - | N-Channel MOSFET | 2A 2A | - | - | 33V | - | - | - | ROHS3 Compliant | ||
| ISL6208IBZ | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипEL7156CSZ-T7Anlielectronics Тип | Renesas Electronics America Inc. |
IC GATE DRVR HI/LOW SIDE 8SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 18 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | YES | High-Side or Low-Side | 0.8V 2.4V | Industrial grade | -40°C~125°C TJ | Cut Tape (CT) | - | e3 | Active | 3 (168 Hours) | 8 | EAR99 | Matte Tin (Sn) - annealed | 4.5V~16.5V | DUAL | GULL WING | NOT SPECIFIED | 1 | 5V | - | NOT SPECIFIED | EL7156 | 8 | R-PDSO-G8 | 16.5V | 200mA | Non-Inverting | - | 14.5ns 15ns | HALF BRIDGE BASED PERIPHERAL DRIVER | Single | 1 | - | -5V | 3.5A | IGBT | 3.5A 3.5A | - | - | - | - | 4.9022mm | - | ROHS3 Compliant | ||
| EL7156CSZ-T7 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипEL7212CSZAnlielectronics Тип | Renesas Electronics America Inc. |
RENESAS - EL7212CSZ - MOSFET Driver Dual, Inverting, 4.5V-15V supply, 2A peak out, 4 Ohm output, SOIC-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 15 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | YES | Low-Side | 0.8V 2.4V | Industrial grade | -40°C~125°C TJ | Tube | 2002 | e3 | Active | 3 (168 Hours) | 8 | EAR99 | Matte Tin (Sn) - annealed | 4.5V~15V | DUAL | GULL WING | NOT SPECIFIED | 1 | - | - | NOT SPECIFIED | EL7212 | 8 | R-PDSO-G8 | 16.5V | - | Inverting | 7.5ns | 7.5ns 10ns | BUFFER OR INVERTER BASED MOSFET DRIVER | Independent | 2 | - | - | 2A | N-Channel, P-Channel MOSFET | 2A 2A | NO | - | - | - | 4.9mm | 3.911mm | ROHS3 Compliant | ||
| EL7212CSZ | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипICL7667CBAZAAnlielectronics Тип | Renesas Electronics America Inc. |
RENESAS - ICL7667CBAZA - MOSFET-Treiber, Low-Side, 4.5V-15V Versorgungsspannung, 1Aout, 20ns Verzögerung, SOIC-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | YES | High-Side or Low-Side | 0.8V 2V | Commercial grade | 0°C~70°C TA | Tube | 1999 | e3 | Active | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) - annealed | 4.5V~15V | DUAL | GULL WING | NOT SPECIFIED | 2 | - | - | NOT SPECIFIED | ICL7667 | 8 | R-PDSO-G8 | 15V | - | Inverting | - | 20ns 20ns | BUFFER OR INVERTER BASED MOSFET DRIVER | Independent | 2 | - | - | - | N-Channel MOSFET | - | NO | - | - | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | ||
| ICL7667CBAZA | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипISL2111ABZAnlielectronics Тип | Renesas Electronics America Inc. |
IC GATE DRVR HALF-BRIDGE 8SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | YES | Half-Bridge | 1.4V 2.2V | Industrial grade | -40°C~125°C TJ | Tube | 2001 | e3 | Active | 1 (Unlimited) | 8 | - | Matte Tin (Sn) | 8V~14V | DUAL | GULL WING | NOT SPECIFIED | 1 | 12V | - | NOT SPECIFIED | ISL2111 | 8 | R-PDSO-G8 | - | - | Non-Inverting | - | 9ns 7.5ns | - | Independent | 2 | 0.06 μs | - | - | N-Channel MOSFET | 3A 4A | YES | 0.06 μs | 114V | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | ||
| ISL2111ABZ | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипISL6700IBZAnlielectronics Тип | Renesas Electronics America Inc. |
IC GATE DRVR HALF-BRIDGE 8SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | YES | Half-Bridge | 0.8V 2.2V | Industrial grade | -40°C~125°C TJ | Tube | 2001 | e3 | Active | 1 (Unlimited) | 8 | - | MATTE TIN | 9V~15V | DUAL | GULL WING | NOT SPECIFIED | 1 | 12V | - | NOT SPECIFIED | ISL6700 | 8 | R-PDSO-G8 | 75V | 1.25A | Non-Inverting | - | 5ns 5ns | FULL BRIDGE BASED MOSFET DRIVER | Independent | 2 | 0.095 μs | - | - | N-Channel MOSFET | 1.4A 1.3A | YES | 0.09 μs | 80V | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | ||
| ISL6700IBZ |
Индекс :
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