Memory Cards Products For Sale - PDF - Memory Cards, Modules -Page10

Изображение	Тип	Марка	Объяснение	Установленная цена	Количество	RoHS	Mount	Surface Mount	Number of Pins	Number of Terminals	Access Time-Max	CAS Latency	Chip Configuration	Chip Density (bit)	Clock Frequency-Max (fCLK)	Data Bus Width (bit)	ECC Support	ECCN (US)	HTS	Ihs Manufacturer	Lead Shape	Manufacturer	Manufacturer Part Number	Max. Access Time (ns)	Maximum Clock Rate (MHz)	Maximum Operating Supply Voltage (V)	Maximum Operating Temperature (°C)	Memory Types	Minimum Operating Supply Voltage (V)	Minimum Operating Temperature (°C)	Module	Module Density	Module Sides	Mounting	Number of Elements	Number of Chip Banks	Number of Chip per Module	Number of Ranks	Number of Words	Number of Words Code	Operating Current (mA)	Operating Temperature-Max	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Height	Package Length	Package Shape	Package Style	Package Width	Part Life Cycle Code	Part Package Code	PC Type	PCB changed	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Schedule B	SPD EEPROM Support	Standard Package Name	Supplier Package	Supplier Temperature Grade	Supply Voltage-Nom (Vsup)	Typical Operating Supply Voltage (V)	Operating Temperature	Packaging	Published	JESD-609 Code	Pbfree Code	Part Status	Moisture Sensitivity Level (MSL)	Number of Terminations	ECCN Code	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Additional Feature	HTS Code	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Supply Voltage	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Operating Supply Voltage	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Max Supply Voltage	Min Supply Voltage	Memory Size	Number of Ports	Speed	Operating Mode	Supply Current-Max	Access Time	Data Bus Width	Organization	Output Characteristics	Seated Height-Max	Memory Width	Density	Standby Current-Max	Memory Density	Max Frequency	PLL	Parallel/Serial	I/O Type	Memory IC Type	Programming Voltage	Refresh Cycles	Access Mode	Self Refresh	Module Type	Height Seated (Max)	Length	Width	Radiation Hardening	RoHS Status

Изображение	Тип	Марка	Объяснение	Количество	Mount	Surface Mount	Number of Pins	Number of Terminals	Access Time-Max	CAS Latency	Chip Configuration	Chip Density (bit)	Clock Frequency-Max (fCLK)	Data Bus Width (bit)	ECC Support	ECCN (US)	HTS	Ihs Manufacturer	Lead Shape	Manufacturer	Manufacturer Part Number	Max. Access Time (ns)	Maximum Clock Rate (MHz)	Maximum Operating Supply Voltage (V)	Maximum Operating Temperature (°C)	Memory Types	Minimum Operating Supply Voltage (V)	Minimum Operating Temperature (°C)	Module	Module Density	Module Sides	Mounting	Number of Elements	Number of Chip Banks	Number of Chip per Module	Number of Ranks	Number of Words	Number of Words Code	Operating Current (mA)	Operating Temperature-Max	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Height	Package Length	Package Shape	Package Style	Package Width	Part Life Cycle Code	Part Package Code	PC Type	PCB changed	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Schedule B	SPD EEPROM Support	Standard Package Name	Supplier Package	Supplier Temperature Grade	Supply Voltage-Nom (Vsup)	Typical Operating Supply Voltage (V)	Operating Temperature	Packaging	Published	JESD-609 Code	Pbfree Code	Part Status	Moisture Sensitivity Level (MSL)	Number of Terminations	ECCN Code	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Additional Feature	HTS Code	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Supply Voltage	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Operating Supply Voltage	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Max Supply Voltage	Min Supply Voltage	Memory Size	Number of Ports	Speed	Operating Mode	Supply Current-Max	Access Time	Data Bus Width	Organization	Output Characteristics	Seated Height-Max	Memory Width	Density	Standby Current-Max	Memory Density	Max Frequency	PLL	Parallel/Serial	I/O Type	Memory IC Type	Programming Voltage	Refresh Cycles	Access Mode	Self Refresh	Module Type	Height Seated (Max)	Length	Width	Radiation Hardening	RoHS Status
	Mfr. Тип SMC128CFB6E Anlielectronics Тип	Micron Technology Inc.	Flash Card 128M-byte 3.3V/5V CompactFlash 50-Pin Tray Сборник данных Сравнение	Min.:1 Mult.:1	Socket	-	50	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	CompactFlash®	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	2009	-	yes	Discontinued	3 (168 Hours)	50	3A991.B.1.A	-	85°C	-40°C	CAN ALSO OPERATE WITH 5V SUPPLY	8542.32.00.51	-	UPPER	-	-	1	3.3V	-	-	50	-	-	-	-	-	INDUSTRIAL	-	5.5V	2.97V	128MB	-	-	-	-	-	-	128MX8	-	-	8	1 Gb	-	-	-	-	PARALLEL	-	-	3.3V	-	-	-	-	4.1mm	42.8mm	36.4mm	No	ROHS3 Compliant
SMC128CFB6E Micron Technology Inc. RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип SMC02GBFK6E Anlielectronics Тип	Micron Technology Inc.	MEMORY CARD COMPACTFLASH 2GB Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	CompactFlash®	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-40°C~85°C	-	2008	-	-	Obsolete	1 (Unlimited)	-	-	-	85°C	-40°C	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	2GB	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	ROHS3 Compliant
SMC02GBFK6E Micron Technology Inc. RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип SMC04GBFK6E Anlielectronics Тип	Micron Technology Inc.	MEMORY CARD COMPACTFLASH 4GB Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	CompactFlash®	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-40°C~85°C	-	2008	-	-	Obsolete	1 (Unlimited)	-	-	-	85°C	-40°C	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	4GB	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	ROHS3 Compliant
SMC04GBFK6E Micron Technology Inc. RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип SMS01GDFB5E Anlielectronics Тип	Micron Technology Inc.	Flash Card 1G-byte 3.3V MicroSD Card 8-Pin MicroSD Tray Сборник данных Сравнение	Min.:1 Mult.:1	Socket	-	8	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	microSD™	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-25°C~85°C	-	2008	-	-	Obsolete	3 (168 Hours)	-	-	-	85°C	-25°C	-	-	-	-	-	-	-	-	-	-	-	-	-	3.3V	-	-	-	-	3.6V	2.7V	1GB	-	Class 2	-	-	-	-	-	-	-	-	8 Gb	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	No	ROHS3 Compliant
SMS01GDFB5E Micron Technology Inc. RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип MT4HTF3264HY-667F1 Anlielectronics Тип	Micron Technology	DRAM Module DDR2 SDRAM 256Mbyte 200SODIMM Tray Сборник данных Сравнение	Min.:1 Mult.:1	Socket	NO	200	200	0.45 ns	5	32Mx16	512M	333 MHz	64	No	EAR99	8542.32.00.32	MICRON TECHNOLOGY INC	No Lead	Micron Technology Inc	MT4HTF3264HY-667F1	-	667	1.9	70	-	1.7	0	DRAM Module	256Mbyte	Single	Socket	4	4	4	Single	33554432 words	32000000	1000	70 °C	PLASTIC/EPOXY	DIMM	-	DIMM200,24	30(Max)	67.75(Max)	RECTANGULAR	MICROELECTRONIC ASSEMBLY	2.45(Max)	Obsolete	-	PC2-5300	200	-	5.84	Compliant	Yes	-	Yes	DIM	SODIMM	Commercial	1.8 V	1.8	-	Tray	-	-	-	Obsolete	-	-	-	-	70 °C	0 °C	-	-	CMOS	DUAL	NO LEAD	-	-	-	0.6 mm	unknown	200	R-PDMA-N200	Not Qualified	1.8 V	-	1.8 V	COMMERCIAL	-	1.9 V	1.7 V	-	-	-	-	1.4 mA	-	64 b	32Mx64	3-STATE	-	64	-	0.028 A	2147483648 bit	667 MHz	No	-	COMMON	DDR DRAM MODULE	-	8K	-	Yes	200SODIMM	-	-	-	No	RoHS Compliant
MT4HTF3264HY-667F1 Micron Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип MTA18ADF4G72PZ-3G2B1.001 Anlielectronics Тип	Micron Technology	DRAM Module DDR4 SDRAM 32Gbyte 288VLP RDIMM Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	-	22	4Gx4	16G	-	72	Yes	4A994.a	8473.30.11.40	-	-	-	-	-	3200	1.26	95	-	1.14	0	DRAM Module	32Gbyte	Double	Socket	-	16	-	Single	-	-	3096	-	-	-	-	-	18.9(Max)	133.48(Max)	-	-	3.9(Max)	-	-	PC4-3200	288	-	-	-	-	-	Yes	-	VLP RDIMM	Commercial	-	1.2	-	-	-	-	-	NRND	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	288	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	4Gx72	-	-	-	-	-	-	-	Yes	-	-	-	-	-	-	Yes	288VLP RDIMM	-	-	-	-	-
MTA18ADF4G72PZ-3G2B1.001 Micron Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип MT4LSDT1664AG-133G1 Anlielectronics Тип	Micron Technology	DRAM Module SDRAM 128Mbyte 168UDIMM Tray Сборник данных Сравнение	Min.:1 Mult.:1	-	NO	-	168	5.4 ns	3	16Mx16	256M	133 MHz	64	No	EAR99	-	MICRON TECHNOLOGY INC	No Lead	Micron Technology Inc	MT4LSDT1664AG-133G1	5.4	133	3.6	65	-	3	0	DRAM Module	128Mbyte	Single	Socket	-	4	4	Single	16777216 words	16000000	540	65 °C	PLASTIC/EPOXY	DIMM	DIMM, DIMM168	DIMM168	25.53(Max)	133.5(Max)	RECTANGULAR	MICROELECTRONIC ASSEMBLY	3.18(Max)	Active	-	PC-133	168	-	5.68	-	Yes	-	Yes	DIM	DIMM	Commercial	3.3 V	3.3	-	Tray	-	-	-	Unconfirmed	-	-	-	-	-	-	-	-	CMOS	DUAL	NO LEAD	-	-	-	1.27 mm	compliant	168	R-PDMA-N168	Not Qualified	-	-	3.3 V	COMMERCIAL	-	-	-	-	-	-	-	1.08 mA	-	-	16Mx64	3-STATE	-	64	-	0.008 A	1073741824 bit	-	No	-	COMMON	SYNCHRONOUS DRAM MODULE	-	8K	-	Yes	168UDIMM	-	-	-	-	RoHS non-compliant
MT4LSDT1664AG-133G1 Micron Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип MT8HTF12864HZ-800G1 Anlielectronics Тип	Micron Technology	DRAM Module DDR2 SDRAM 1Gbyte 200SODIMM Tray Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	-	6	128Mx8	1G	-	64	No	EAR99	-	-	No Lead	-	-	-	800	1.9	70	-	1.7	0	DRAM Module	1Gbyte	Double	Socket	-	8	8	Single	-	-	1280	-	-	-	-	-	30.15(Max)	67.75(Max)	-	-	3.8(Max)	-	-	PC2-6400	200	-	-	-	-	-	Yes	DIM	SODIMM	Commercial	-	1.8	-	Tray	-	-	-	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	200	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	128Mx64	-	-	-	-	-	-	-	No	-	-	-	-	8K	-	Yes	200SODIMM	-	-	-	-	Yes with exemptions
MT8HTF12864HZ-800G1 Micron Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип MT4LSDT864AG-10EG2 Anlielectronics Тип	Micron Technology	DRAM Module SDRAM 64Mbyte 168UDIMM Tray Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	-	2	8Mx16	128M	-	64	No	EAR99	-	-	No Lead	-	-	6	100	3.6	65	-	3	0	DRAM Module	64Mbyte	-	Socket	-	-	4	Single	-	-	560	-	-	-	-	-	25.53(Max)	133.5(Max)	-	-	3.18(Max)	-	-	-	168	-	-	-	-	-	-	DIM	DIMM	Commercial	-	3.3	-	Tray	-	-	-	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	168	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	8Mx64	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	168UDIMM	-	-	-	-	RoHS non-compliant
MT4LSDT864AG-10EG2 Micron Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип MT18JDF51272PDZ-1G6D1 Anlielectronics Тип	Micron Technology	DRAM Module DDR3 SDRAM 4Gbyte 240RDIMM Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	-	11	256Mx8	2G	-	72	Yes	EAR99	-	-	No Lead	-	-	-	1600	1.575	70	-	1.425	0	DRAM Module	4Gbyte	Double	Socket	-	8	18	Dual	-	-	1773	-	-	-	-	-	18.9(Max)	133.5(Max)	-	-	4(Max)	-	-	PC3-12800	240	-	-	-	-	-	Yes	DIM	VLP RDIMM	Commercial	-	1.5	-	-	-	-	-	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	240	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	512Mx72	-	-	-	-	-	-	-	-	-	-	-	-	8K	-	Yes	240RDIMM	-	-	-	-	Yes with exemptions
MT18JDF51272PDZ-1G6D1 Micron Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип MT18KSF51272HZ-1G4K1 Anlielectronics Тип	Micron Technology	DRAM Module DDR3L SDRAM 4Gbyte 204SODIMM Сборник данных Сравнение	Min.:1 Mult.:1	-	NO	-	204	-	9	256Mx8	2G	-	72	Yes	EAR99	-	MICRON TECHNOLOGY INC	No Lead	Micron Technology Inc	MT18KSF51272HZ-1G4K1	-	1333	1.45	70	-	1.283	0	DRAM Module	4Gbyte	Double	Socket	-	8	18	Dual	536870912 words	512000000	873	70 °C	UNSPECIFIED	DIMM	HALOGEN FREE, SODIMM-204	-	30.15(Max)	67.75(Max)	RECTANGULAR	MICROELECTRONIC ASSEMBLY	3.8(Max)	Active	-	PC3-10600	204	-	5.71	-	-	-	Yes	DIM	SODIMM	Commercial	1.35 V	1.35	-	-	-	-	-	Obsolete	-	-	EAR99	-	-	-	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V SUPPLY; WD-MAX	8542.32.00.36	CMOS	DUAL	NO LEAD	-	1	-	-	compliant	204	R-XDMA-N204	-	-	1.45 V	-	COMMERCIAL	1.283 V	-	-	-	1	-	SYNCHRONOUS	-	-	-	512Mx72	-	30.15 mm	72	-	-	4	-	No	-	-	DDR DRAM MODULE	-	8K	DUAL BANK PAGE BURST	Yes	204SODIMM	-	67.6 mm	3.8 mm	-	Yes with exemptions
MT18KSF51272HZ-1G4K1 Micron Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип MT18JSF51272AZ-1G4M1 Anlielectronics Тип	Micron Technology	DRAM Module DDR3 SDRAM 4Gbyte 240UDIMM Tray Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	-	9	256Mx8	2G	-	72	Yes	EAR99	8542.32.00.71	-	No Lead	-	-	-	1333	1.575	70	-	1.425	0	DRAM Module	4Gbyte	Double	Socket	-	8	18	Dual	-	-	2133	-	-	-	-	-	30.5(Max)	133.5(Max)	-	-	4(Max)	-	-	PC3-10600	240	-	-	-	-	-	Yes	DIM	UDIMM	Commercial	-	1.5	-	Tray	-	-	-	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	240	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	512Mx72	-	-	-	-	-	-	-	No	-	-	-	-	8K	-	Yes	240UDIMM	-	-	-	-	Yes with exemptions
MT18JSF51272AZ-1G4M1 Micron Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип MT8JTF51264HDZ-1G4D1 Anlielectronics Тип	Micron Technology	DRAM Module DDR3 SDRAM 4Gbyte 204SODIMM Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	-	9	256Mx16	4G	-	64	No	EAR99	8473.30.11.40	-	No Lead	-	-	-	1333	1.575	70	-	1.425	0	DRAM Module	4Gbyte	Double	Socket	-	8	8	Dual	-	-	1040	-	-	-	-	-	30.15(Max)	67.75(Max)	-	-	3.8(Max)	-	-	PC3-10600	204	-	-	-	-	-	Yes	DIM	SODIMM	Commercial	-	1.5	-	-	-	-	-	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	204	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	512Mx64	-	-	-	-	-	-	-	No	-	-	-	-	8K	-	Yes	204SODIMM	-	-	-	-	Yes with exemptions
MT8JTF51264HDZ-1G4D1 Micron Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип MT16KTF1G64HZ-1G4D1 Anlielectronics Тип	Micron Technology	DRAM Module DDR3 SDRAM 8Gbyte 204SODIMM Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	-	9	512Mx8	4G	-	64	No	4A994.a	8542.32.00.32	-	No Lead	-	-	-	1333	1.45	95	-	1.283	0	DRAM Module	8Gbyte	Double	Socket	-	-	16	Dual	-	-	1472	-	-	-	-	-	30.15(Max)	67.75(Max)	-	-	3.8(Max)	-	-	PC3-10600	204	-	-	-	-	-	Yes	DIM	SODIMM	-	-	1.35	-	-	-	-	-	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	204	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1Gx64	-	-	-	-	-	-	-	No	-	-	-	-	8K	-	Yes	204SODIMM	-	-	-	-	Yes with exemptions
MT16KTF1G64HZ-1G4D1 Micron Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип MT36JDZS51272PZ-1G4F1 Anlielectronics Тип	Micron Technology	DRAM Module DDR3 SDRAM 4Gbyte 240RDIMM Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	-	9	256Mx4	1G	-	72	Yes	4A994.a	-	-	No Lead	-	-	-	1333	-	95	-	-	0	DRAM Module	4Gbyte	-	Socket	-	-	36	Dual	-	-	-	-	-	-	-	-	18.9(Max)	133.5(Max)	-	-	8.61(Max)	-	-	PC3-10600	240	-	-	-	-	-	-	DIM	VLP RDIMM	-	-	1.5	-	-	-	-	-	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	240	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	512Mx72	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	240RDIMM	-	-	-	-	Yes with exemptions
MT36JDZS51272PZ-1G4F1 Micron Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип MT16KTF1G64AZ-1G4E1 Anlielectronics Тип	Micron Technology	DRAM Module DDR3L SDRAM 8Gbyte 240UDIMM Tray Сборник данных Сравнение	Min.:1 Mult.:1	-	NO	-	240	-	9	512Mx8	4G	-	64	No	EAR99	-	MICRON TECHNOLOGY INC	No Lead	Micron Technology Inc	MT16KTF1G64AZ-1G4E1	-	1333	1.45/1.575	70	-	1.283/1.425	0	DRAM Module	8Gbyte	Double	Socket	-	-	18	Dual	1073741824 words	1000000000	1248	70 °C	UNSPECIFIED	DIMM	DIMM,	-	30.5(Max)	133.5(Max)	RECTANGULAR	MICROELECTRONIC ASSEMBLY	4(Max)	Obsolete	DIMM	PC3-10600	240	-	5.67	-	-	-	Yes	DIM	UDIMM	Commercial	1.35 V	1.35/1.5	-	-	-	e4	-	Obsolete	-	-	EAR99	GOLD	-	-	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V SUPPLY; WD-MAX	8542.32.00.36	CMOS	DUAL	NO LEAD	-	1	-	1 mm	unknown	240	R-XDMA-N240	-	-	1.45 V	-	COMMERCIAL	1.283 V	-	-	-	1	-	SYNCHRONOUS	-	-	-	1Gx64	-	30.5 mm	64	-	-	68719476736 bit	-	No	-	-	DDR DRAM MODULE	-	8K	DUAL BANK PAGE BURST	Yes	240UDIMM	-	133.35 mm	4 mm	-	Supplier Unconfirmed
MT16KTF1G64AZ-1G4E1 Micron Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип MT16LSDT3264AY-13EG3 Anlielectronics Тип	Micron Technology	DRAM Module SDRAM 256Mbyte 168UDIMM Tray Сборник данных Сравнение	Min.:1 Mult.:1	Socket	-	168	-	-	2	16Mx8	128M	-	64	No	EAR99	-	-	No Lead	-	-	5.4	133	3.6	65	-	3	0	DRAM Module	256Mbyte	-	Socket	16	-	16	Dual	-	-	1336	-	-	-	-	-	35.05(Max)	133.5(Max)	-	-	3.99(Max)	-	-	-	168	-	-	Compliant	-	-	-	DIM	DIMM	Commercial	-	3.3	-	Tray	-	-	-	Obsolete	-	-	-	-	65 °C	0 °C	-	-	-	-	-	-	-	-	-	-	168	-	-	3.3 V	-	-	-	-	3.6 V	3 V	-	-	-	-	-	5.4 ns	64 b	32Mx64	-	-	-	-	-	-	133 MHz	-	-	-	-	-	-	-	-	168UDIMM	-	-	-	No	Yes with exemptions
MT16LSDT3264AY-13EG3 Micron Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип MT18JDF1G72PDZ-1G6D1 Anlielectronics Тип	Micron Technology	DRAM Module DDR3 SDRAM 8Gbyte 240RDIMM Сборник данных Сравнение	Min.:1 Mult.:1	Socket	NO	240	240	-	11	512Mx8	4G	-	72	Yes	EAR99	-	MICRON TECHNOLOGY INC	No Lead	Micron Technology Inc	MT18JDF1G72PDZ-1G6D1	-	1600	1.575	70	-	1.425	0	DRAM Module	8Gbyte	Double	Socket	18	8	18	Dual	1073741824 words	1000000000	1863	70 °C	UNSPECIFIED	DIMM	DIMM,	-	18.9(Max)	133.5(Max)	RECTANGULAR	MICROELECTRONIC ASSEMBLY	4(Max)	Obsolete	DIMM	PC3-12800	240	NOT SPECIFIED	5.66	Compliant	Yes	8473300002	Yes	DIM	VLP RDIMM	Commercial	1.5 V	1.5	-	-	-	-	-	Obsolete	-	-	EAR99	-	70 °C	0 °C	AUTO/SELF REFRESH	8542.32.00.36	CMOS	DUAL	NO LEAD	NOT SPECIFIED	1	-	1 mm	unknown	240	R-XDMA-N240	-	1.5 V	1.575 V	-	COMMERCIAL	1.425 V	1.575 V	1.425 V	-	1	-	SYNCHRONOUS	-	-	-	1Gx72	-	18.9 mm	72	-	-	77309411328 bit	1.6 GHz	Yes	-	-	DDR DRAM MODULE	-	8K	DUAL BANK PAGE BURST	Yes	240RDIMM	-	133.35 mm	-	-	Yes with exemptions
MT18JDF1G72PDZ-1G6D1 Micron Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип MT4HTF6464HY-667G1 Anlielectronics Тип	Micron Technology	DRAM Module DDR2 SDRAM 512Mbyte 200SODIMM Tray Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	-	5	64Mx16	1G	-	64	No	EAR99	8542.32.00.02	-	No Lead	-	-	-	667	1.9	70	-	1.7	0	DRAM Module	512Mbyte	Single	Socket	-	8	4	Single	-	-	-	-	-	-	-	-	30(Max)	67.75(Max)	-	-	2.45(Max)	-	-	PC2-5300	200	-	-	-	-	-	Yes	DIM	SODIMM	Commercial	-	1.8	-	Tray	-	-	-	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	200	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	64Mx64	-	-	-	-	-	-	-	No	-	-	-	-	8K	-	Yes	200SODIMM	-	-	-	-	Yes with exemptions
MT4HTF6464HY-667G1 Micron Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип MT8VDDT3264AY-40BGB Anlielectronics Тип	Micron Technology	DRAM Module DDR SDRAM 256Mbyte 184UDIMM Tray Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	-	3	32Mx8	256M	-	64	No	EAR99	-	-	No Lead	-	-	-	400	2.7	70	-	2.5	0	DRAM Module	256Mbyte	-	Socket	-	-	8	Single	-	-	1600	-	-	-	-	-	28.7(Max)	133.5(Max)	-	-	3.18(Max)	-	-	-	184	-	-	-	-	-	-	DIM	UDIMM	Commercial	-	2.6	-	Tray	-	-	-	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	184	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	32Mx64	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	184UDIMM	-	-	-	-	Yes with exemptions
MT8VDDT3264AY-40BGB Micron Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -

Memory Cards, Modules

Memory Cards definition: A memory card or memory cartridge is an electronic data storage device used for storing digital information, typically using flash memory. M... Memory Cards Product Listing: SMC128CFB6E,SMC02GBFK6E,SMC04GBFK6E,SMS01GDFB5E,MT4HTF3264HY-667F1.Memory Cards, Modules type:Solid State Drives (SSDs), Hard Disk Drives (HDDs)(10123),Memory Cards(4894),Memory - Modules(4731),USB Flash Drives(1663),Specialized(1118) .Memory Cards has 246 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.

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Memory Cards, Modules