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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Mount | Package / Case | Surface Mount | Number of Pins | Memory Types | Number of Elements | Operating Temperature (Max.) | Packaging | Published | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Supply Voltage | Terminal Pitch | Reach Compliance Code | Frequency | Time@Peak Reflow Temperature-Max (s) | Pin Count | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Max Supply Voltage | Min Supply Voltage | Memory Size | Number of Ports | Speed | Operating Mode | Clock Frequency | Access Time | Data Bus Width | Organization | Output Characteristics | Memory Width | Standby Current-Max | Memory Density | Max Frequency | Access Time (Max) | I/O Type | Refresh Cycles | Access Mode | Height | Height Seated (Max) | Length | Width | Radiation Hardening | RoHS Status | Lead Free |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипMT18VDDF12872HY-335F1Anlielectronics Тип | Micron Technology Inc. |
MODULE DDR SDRAM 1GB 200SODIMM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Socket | 200-SODIMM | - | 200 | DDR SDRAM | 18 | - | Bulk | 2003 | e4 | - | Obsolete | 1 (Unlimited) | 200 | EAR99 | Gold (Au) | 70°C | 0°C | AUTO/SELF REFRESH | 8542.32.00.36 | DUAL | NO LEAD | 260 | 1 | 2.5V | - | unknown | - | 30 | 200 | Not Qualified | 2.5V | - | - | COMMERCIAL | - | 2.7V | 2.3V | 1GB | 1 | 333MT/s | SYNCHRONOUS | - | 700 ps | - | 128MX72 | - | 72 | - | 9663676416 bit | 333MHz | - | - | - | - | 31.8mm | - | - | - | - | ROHS3 Compliant | Lead Free | ||
| MT18VDDF12872HY-335F1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипMT4JSF12864HZ-1G4D1Anlielectronics Тип | Micron Technology Inc. |
DRAM Module DDR3 SDRAM 1Gbyte 204SODIMM Tray
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Socket | 204-SODIMM | - | 204 | DDR3 SDRAM | 4 | - | - | 2011 | - | - | Obsolete | 3 (168 Hours) | 204 | EAR99 | - | 70°C | 0°C | WD-MAX | - | DUAL | NO LEAD | NOT SPECIFIED | 1 | 1.35V | 0.6mm | unknown | - | NOT SPECIFIED | 204 | Not Qualified | 1.5V | - | - | COMMERCIAL | - | 1.575V | 1.425V | 1GB | 1 | 1333MT/s | SYNCHRONOUS | 667MHz | - | - | - | 3-STATE | 64 | - | - | 1.333GHz | 0.255 ns | COMMON | 8192 | SINGLE BANK PAGE BURST | - | 30.15mm | 67.6mm | - | - | ROHS3 Compliant | - | ||
| MT4JSF12864HZ-1G4D1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипMT18KDF1G72PDZ-1G4E1Anlielectronics Тип | Micron Technology Inc. |
DRAM Module DDR3L SDRAM 8Gbyte 240RDIMM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Socket | 240-RDIMM | - | 240 | DDR3L SDRAM | 18 | - | - | 2015 | - | - | Obsolete | 3 (168 Hours) | 240 | - | - | 70°C | 0°C | AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY | - | DUAL | NO LEAD | - | 1 | 1.35V | 1mm | unknown | - | - | - | - | 1.35V | - | - | COMMERCIAL | - | 1.45V | 1.283V | 8GB | 1 | 1333MT/s | SYNCHRONOUS | - | - | 72b | 1GX72 | - | 72 | - | 77309411328 bit | 1.333GHz | - | - | - | DUAL BANK PAGE BURST | - | - | 133.35mm | - | - | ROHS3 Compliant | - | ||
| MT18KDF1G72PDZ-1G4E1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипMT8HTF12864AZ-800M1Anlielectronics Тип | Micron Technology Inc. |
MODULE DDR2 SDRAM 1GB 240UDIMM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 5 Weeks | - | 240-UDIMM | NO | 240 | DDR2 SDRAM | - | - | - | 2014 | - | - | Obsolete | 3 (168 Hours) | 240 | - | - | 70°C | 0°C | SELF REFRESH; WD-MAX | - | DUAL | NO LEAD | - | 1 | 1.8V | - | - | - | - | - | - | 1.8V | 1.9V | - | COMMERCIAL | 1.7V | - | - | 1GB | 1 | 800MT/s | SYNCHRONOUS | - | - | 64b | 128MX64 | - | 64 | - | 8589934592 bit | 400MHz | - | - | - | SINGLE BANK PAGE BURST | - | 30.5mm | 133.35mm | - | - | ROHS3 Compliant | - | ||
| MT8HTF12864AZ-800M1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипMT9HTF12872AZ-80EM1Anlielectronics Тип | Micron Technology Inc. |
MODULE DDR2 SDRAM 1GB 240UDIMM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 5 Weeks | - | 240-UDIMM | NO | 240 | DDR2 SDRAM | - | - | - | 2014 | - | - | Obsolete | 1 (Unlimited) | 240 | - | - | 70°C | 0°C | AUTO/SELF REFRESH; WD-MAX | - | DUAL | NO LEAD | - | 1 | 1.8V | - | - | - | - | - | - | 1.8V | 1.9V | - | COMMERCIAL | 1.7V | - | - | 1GB | 1 | 800MT/s | SYNCHRONOUS | - | - | 72b | 128MX72 | - | 72 | - | 9663676416 bit | 400MHz | - | - | - | SINGLE BANK PAGE BURST | - | 30.5mm | 133.35mm | - | - | ROHS3 Compliant | - | ||
| MT9HTF12872AZ-80EM1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипMT9LSDT1672AY-133G3Anlielectronics Тип | Micron Technology Inc. |
MODULE SDRAM 128MB 168UDIMM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Socket | 168-UDIMM | - | 168 | SDRAM | 9 | - | Bulk | 2002 | - | - | Obsolete | 1 (Unlimited) | - | - | - | 65°C | 0°C | - | - | - | - | - | - | - | - | - | 133MHz | - | - | - | 3.3V | - | - | - | - | 3.6V | 3V | 128MB | - | 133MHz | - | - | - | 72b | - | - | - | - | - | 133MHz | - | - | - | - | 34.9mm | - | - | - | No | ROHS3 Compliant | Lead Free | ||
| MT9LSDT1672AY-133G3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипMT4HTF1664HY-40EB3Anlielectronics Тип | Micron Technology Inc. |
MOD DDR2 SDRAM 128MB 200SODIMM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | 200-SODIMM | NO | 200 | DDR2 SDRAM | - | - | Bulk | 2004 | e3 | yes | Discontinued | 1 (Unlimited) | 200 | - | Matte Tin (Sn) | 70°C | 0°C | - | - | DUAL | - | 260 | - | 1.8V | 0.6mm | - | - | 30 | - | - | 1.8V | - | - | COMMERCIAL | - | - | - | 128MB | - | 400MT/s | - | - | - | 64b | 16MX64 | 3-STATE | 64 | 0.02A | 1073741824 bit | 400MHz | 0.6 ns | COMMON | 8192 | - | 30mm | - | - | - | No | ROHS3 Compliant | Lead Free | ||
| MT4HTF1664HY-40EB3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMT8HTF12864HDY-667E1Anlielectronics Тип | Micron Technology Inc. |
MODULE DDR2 SDRAM 1GB 200SODIMM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Socket | 200-SODIMM | - | 200 | DDR2 SDRAM | 8 | - | - | 2010 | - | - | Obsolete | 1 (Unlimited) | 200 | - | - | 70°C | 0°C | - | - | DUAL | NO LEAD | - | - | 1.8V | 0.6mm | unknown | - | - | - | Not Qualified | 1.8V | - | - | COMMERCIAL | - | 1.9V | 1.7V | 1GB | - | 667MT/s | - | 333MHz | - | - | - | 3-STATE | 64 | 0.056A | - | 667MHz | 0.45 ns | COMMON | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| MT8HTF12864HDY-667E1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипMT36HTF51272PY-667E1Anlielectronics Тип | Micron Technology Inc. |
MODULE DDR2 SDRAM 4GB 240RDIMM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | 240-RDIMM | - | 240 | DDR2 SDRAM | - | - | - | 2002 | - | - | Obsolete | 1 (Unlimited) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 4GB | - | 667MT/s | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| MT36HTF51272PY-667E1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMT18HVF25672PZ-667H1Anlielectronics Тип | Micron Technology Inc. |
MODULE DDR2 SDRAM 2GB 240RDIMM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | 240-RDIMM | NO | 240 | DDR2 SDRAM | - | 70°C | - | 2010 | e4 | - | Obsolete | 3 (168 Hours) | 240 | EAR99 | GOLD | - | - | AUTO/SELF REFRESH | 8542.32.00.36 | DUAL | NO LEAD | - | 1 | 1.8V | 1mm | - | - | - | 240 | Not Qualified | - | 1.9V | 1.8V | COMMERCIAL | 1.7V | - | - | 2GB | 1 | 667MT/s | SYNCHRONOUS | 333MHz | - | - | 256MX72 | 3-STATE | 72 | 0.126A | 19327352832 bit | - | 0.45 ns | COMMON | 8192 | SINGLE BANK PAGE BURST | - | 18.05mm | 133.35mm | 17.9mm | - | ROHS3 Compliant | - | ||
| MT18HVF25672PZ-667H1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMT36HTF51272FDZ-80EH1N8Anlielectronics Тип | Micron Technology Inc. |
MODULE DDR2 SDRAM 4GB 240FBDIMM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | 240-FBDIMM | NO | 240 | DDR2 SDRAM | - | 95°C | - | 2010 | e4 | - | Discontinued | 3 (168 Hours) | 240 | EAR99 | GOLD | - | - | AUTO/SELF REFRESH | 8542.32.00.36 | DUAL | - | - | 1 | 1.8V | 1mm | - | - | - | 240 | - | 1.8V | - | - | OTHER | - | - | - | 4GB | 1 | 800MT/s | - | 400MHz | - | 72b | 512MX72 | 3-STATE | 72 | - | 38654705664 bit | 800MHz | - | COMMON | 8192 | FOUR BANK PAGE BURST | - | 30.5mm | 133.35mm | - | No | ROHS3 Compliant | - | ||
| MT36HTF51272FDZ-80EH1N8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипMT8VDDT6464HDY-40BJ1Anlielectronics Тип | Micron Technology Inc. |
DRAM Module DDR SDRAM 512Mbyte 200SODIMM Tray
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Socket | 200-SODIMM | - | 200 | DDR SDRAM | 8 | - | - | 2003 | - | - | Obsolete | 1 (Unlimited) | 200 | - | - | 70°C | 0°C | - | - | DUAL | - | - | - | 2.6V | 0.6mm | - | - | - | - | - | 2.6V | - | - | COMMERCIAL | - | 2.7V | 2.5V | 512MB | - | 400MT/s | - | - | 900 ns | 64b | 64MX64 | 3-STATE | 64 | 0.04A | 4294967296 bit | 400MHz | - | COMMON | - | - | - | - | - | - | No | ROHS3 Compliant | - | ||
| MT8VDDT6464HDY-40BJ1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипMT8VDDT6464HY-335F3Anlielectronics Тип | Micron Technology Inc. |
DRAM Module DDR SDRAM 512Mbyte 200SODIMM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Socket | 200-SODIMM | - | 200 | DDR SDRAM | 8 | - | - | 2003 | e4 | - | Obsolete | 1 (Unlimited) | 200 | EAR99 | GOLD | 70°C | 0°C | AUTO/SELF REFRESH; WD-MAX | - | DUAL | - | 260 | 1 | 2.5V | 0.6mm | - | - | 30 | 200 | - | 2.5V | - | - | COMMERCIAL | - | 2.7V | 2.3V | 512MB | 1 | 333MT/s | - | 167MHz | - | - | - | 3-STATE | 8 | 0.04A | - | 333MHz | 0.7 ns | COMMON | - | SINGLE BANK PAGE BURST | - | 31.9mm | 67.6mm | - | No | ROHS3 Compliant | - | ||
| MT8VDDT6464HY-335F3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипMT18KSF51272AZ-1G4K1Anlielectronics Тип | Micron Technology Inc. |
DRAM Module DDR3L SDRAM 4Gbyte 240UDIMM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | Socket | 240-UDIMM | - | 240 | DDR3L SDRAM | 18 | - | - | 2012 | e4 | - | Obsolete | 3 (168 Hours) | 240 | EAR99 | GOLD | 70°C | 0°C | AUTO/SELF REFRESH; WD-MAX; SEATED HGT-NOM | 8542.32.00.36 | DUAL | NO LEAD | - | 1 | 1.35V | - | - | - | - | 240 | - | 1.35V | - | - | COMMERCIAL | - | 1.45V | 1.235V | 4GB | 1 | 1333MT/s | SYNCHRONOUS | - | - | 72b | 512MX72 | - | 72 | - | 38654705664 bit | 1.333GHz | - | - | - | DUAL BANK PAGE BURST | - | 30.5mm | 133.35mm | - | - | ROHS3 Compliant | - | ||
| MT18KSF51272AZ-1G4K1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипMT18KDF51272PZ-1G4K1Anlielectronics Тип | Micron Technology Inc. |
DRAM Module DDR3L SDRAM 4Gbyte 240RDIMM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Socket | 240-RDIMM | - | 240 | DDR3L SDRAM | 18 | - | - | 2013 | - | - | Obsolete | 3 (168 Hours) | 240 | EAR99 | - | 70°C | 0°C | AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V SUPPLY; WD-MAX | 8542.32.00.36 | DUAL | NO LEAD | - | 1 | 1.35V | 1mm | - | - | - | - | - | 1.35V | - | - | COMMERCIAL | - | 1.45V | 1.283V | 4GB | 1 | 1333MT/s | SYNCHRONOUS | - | - | 72b | 512MX72 | - | 72 | - | 38654705664 bit | 1.333GHz | - | - | - | SINGLE BANK PAGE BURST | - | - | 133.35mm | - | - | ROHS3 Compliant | - | ||
| MT18KDF51272PZ-1G4K1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMT18KSF1G72HZ-1G6E2Anlielectronics Тип | Micron Technology Inc. |
DRAM Module DDR3L SDRAM 8Gbyte 204SODIMM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Socket | 204-SODIMM | - | 204 | DDR3L SDRAM | 18 | - | - | 2013 | e4 | - | Obsolete | 3 (168 Hours) | 204 | - | Gold (Au) | 70°C | 0°C | AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY | - | ZIG-ZAG | NO LEAD | NOT SPECIFIED | 1 | 1.35V | - | - | - | NOT SPECIFIED | - | - | 1.35V | - | - | COMMERCIAL | - | 1.45V | 1.283V | 8GB | 1 | 1600MT/s | SYNCHRONOUS | - | - | - | 1GX72 | - | 72 | - | 77309411328 bit | 1.6GHz | - | - | - | DUAL BANK PAGE BURST | - | 30.15mm | 67.6mm | 3.8mm | - | ROHS3 Compliant | - | ||
| MT18KSF1G72HZ-1G6E2 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMT16VDDF6464HG-40BG2Anlielectronics Тип | Micron Technology Inc. |
MODULE DDR SDRAM 512MB 200SODIMM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | 200-SODIMM | NO | 200 | DDR SDRAM | - | 70°C | Bulk | 2002 | - | - | Obsolete | 1 (Unlimited) | 200 | - | - | - | - | - | - | DUAL | NO LEAD | - | - | 2.6V | 0.6mm | not_compliant | - | - | - | Not Qualified | - | - | 2.6V | COMMERCIAL | - | - | - | 512MB | - | 400MT/s | - | - | - | - | 64MX64 | 3-STATE | 64 | 0.064A | 4294967296 bit | - | 0.7 ns | COMMON | 8192 | - | 38.1mm | - | - | - | - | Non-RoHS Compliant | Contains Lead | ||
| MT16VDDF6464HG-40BG2 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMT18HTF25672AY-40EA1Anlielectronics Тип | Micron Technology Inc. |
MODULE DDR2 SDRAM 2GB 240UDIMM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Socket | 240-UDIMM | - | 240 | DDR2 SDRAM | 18 | - | Bulk | 2010 | - | - | Discontinued | 1 (Unlimited) | - | - | - | 85°C | 0°C | - | - | - | - | - | - | - | - | - | - | - | - | - | 1.8V | - | - | - | - | 1.9V | 1.7V | 2GB | - | 400MT/s | - | - | 60 ps | 72b | - | - | - | - | - | 400MHz | - | - | - | - | 30mm | - | - | - | No | ROHS3 Compliant | Lead Free | ||
| MT18HTF25672AY-40EA1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMT18HTF6472AY-40EB2Anlielectronics Тип | Micron Technology Inc. |
MODULE DDR2 SDRAM 512MB 240UDIMM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Socket | 240-UDIMM | - | 240 | DDR2 SDRAM | 18 | - | Bulk | 2010 | - | - | Obsolete | 1 (Unlimited) | 240 | - | - | 85°C | 0°C | - | - | DUAL | NO LEAD | - | - | 1.8V | 1mm | unknown | - | - | - | Not Qualified | 1.8V | - | - | COMMERCIAL | - | 1.9V | 1.7V | 512MB | - | 400MT/s | - | 200MHz | 60 ps | - | 64MX72 | 3-STATE | 72 | - | - | 400MHz | - | COMMON | 8192 | - | 30mm | - | - | - | - | ROHS3 Compliant | Lead Free | ||
| MT18HTF6472AY-40EB2 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMT4HTF1664HY-53EB3Anlielectronics Тип | Micron Technology Inc. |
MOD DDR2 SDRAM 128MB 200SODIMM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | 200-SODIMM | NO | 200 | DDR2 SDRAM | - | - | Bulk | 2004 | e3 | yes | Discontinued | 1 (Unlimited) | 200 | - | Matte Tin (Sn) | 70°C | 0°C | - | - | DUAL | - | 260 | - | 1.8V | 0.6mm | - | - | 30 | - | - | 1.8V | - | - | COMMERCIAL | - | - | - | 128MB | - | 533MT/s | - | 267MHz | - | 64b | 16MX64 | 3-STATE | 64 | 0.02A | 1073741824 bit | 533MHz | 0.5 ns | COMMON | 8192 | - | 30mm | - | - | - | No | ROHS3 Compliant | Lead Free | ||
| MT4HTF1664HY-53EB3 |
Индекс :
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