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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Mount | Package / Case | Surface Mount | Number of Pins | Memory Types | Number of Elements | Operating Temperature (Max.) | Packaging | Published | Series | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Supply Voltage | Terminal Pitch | Reach Compliance Code | Frequency | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Max Supply Voltage | Min Supply Voltage | Memory Size | Number of Ports | Speed | Operating Mode | Clock Frequency | Access Time | Data Bus Width | Organization | Output Characteristics | Memory Width | Standby Current-Max | Memory Density | Max Frequency | Access Time (Max) | I/O Type | Refresh Cycles | Access Mode | Height | Height Seated (Max) | Length | Width | Radiation Hardening | RoHS Status | Lead Free |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипMT4HTF3264AY-53ED3Anlielectronics Тип | Micron Technology Inc. |
DRAM Module DDR2 SDRAM 256MByte 240UDIMM Tray
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Socket | 240-UDIMM | - | 240 | DDR2 SDRAM | 4 | - | Bulk | 2002 | - | - | - | Obsolete | 1 (Unlimited) | 240 | - | - | 85°C | 0°C | - | - | DUAL | NO LEAD | - | - | 1.8V | 1mm | unknown | - | - | - | - | Not Qualified | 1.8V | - | - | COMMERCIAL | - | 1.9V | 1.7V | 256MB | - | 533MT/s | - | 267MHz | 50 ps | - | - | 3-STATE | 64 | - | - | 533MHz | - | COMMON | 8192 | - | 29.5mm | - | - | - | - | ROHS3 Compliant | Lead Free | ||
| MT4HTF3264AY-53ED3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипMT16HTF12864HY-40ED3Anlielectronics Тип | Micron Technology Inc. |
MODULE DDR2 SDRAM 1GB 200SODIMM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | 200-SODIMM | NO | 200 | DDR2 SDRAM | - | - | Bulk | 2004 | - | e4 | yes | Discontinued | 1 (Unlimited) | 200 | EAR99 | Gold (Au) | 70°C | 0°C | AUTO/SELF REFRESH | 8542.32.00.36 | ZIG-ZAG | - | 260 | 1 | 1.8V | - | - | - | 30 | 200 | - | - | 1.8V | 1.9V | - | COMMERCIAL | 1.7V | - | - | 1GB | 1 | 400MT/s | - | - | - | 64b | 128MX64 | - | 64 | - | 8589934592 bit | 400MHz | - | - | - | DUAL BANK PAGE BURST | 30mm | - | - | - | No | ROHS3 Compliant | Lead Free | ||
| MT16HTF12864HY-40ED3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипMT9HTF6472PY-40ED2Anlielectronics Тип | Micron Technology Inc. |
MODULE DDR2 SDRAM 512MB 240RDIMM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | 240-RDIMM | NO | 240 | DDR2 SDRAM | - | - | Bulk | 2006 | - | e3 | yes | Discontinued | 1 (Unlimited) | 240 | - | Matte Tin (Sn) | 55°C | 0°C | - | - | DUAL | - | 260 | - | 1.8V | 1mm | - | - | 30 | - | - | - | 1.8V | - | - | COMMERCIAL | - | - | - | 512MB | - | 400MT/s | - | 200MHz | - | 72b | 64MX72 | 3-STATE | 72 | 0.063A | 4831838208 bit | 400MHz | 0.6 ns | COMMON | 8192 | - | 30mm | - | - | - | No | ROHS3 Compliant | Lead Free | ||
| MT9HTF6472PY-40ED2 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMT18HTF12872PY-80ED2Anlielectronics Тип | Micron Technology Inc. |
MODULE DDR2 SDRAM 1GB 240RDIMM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Socket | 240-RDIMM | - | 240 | DDR2 SDRAM | 18 | - | Bulk | 2002 | - | - | - | Obsolete | 1 (Unlimited) | 240 | - | - | 70°C | 0°C | - | - | DUAL | - | - | - | 1.8V | 1mm | - | - | - | - | - | - | 1.8V | - | - | COMMERCIAL | - | 1.9V | 1.7V | 1GB | - | 800MT/s | - | 400MHz | 40 ps | 72b | 128MX72 | 3-STATE | 72 | 0.126A | 9663676416 bit | 800MHz | - | COMMON | 8192 | - | 30mm | - | - | - | No | ROHS3 Compliant | Lead Free | ||
| MT18HTF12872PY-80ED2 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMT4VDDT1664HY-335F3Anlielectronics Тип | Micron Technology Inc. |
MODULE DDR SDRAM 128MB 200SODIMM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Socket | 200-SODIMM | - | 200 | DDR SDRAM | 4 | - | - | 2003 | - | - | - | Discontinued | 1 (Unlimited) | 200 | - | - | 70°C | 0°C | - | - | DUAL | NO LEAD | - | - | 2.5V | 0.6mm | unknown | 200MHz | - | - | - | Not Qualified | 2.5V | - | - | COMMERCIAL | - | 2.7V | 2.3V | 128MB | - | - | - | - | 700 ps | - | - | 3-STATE | 64 | - | - | - | - | COMMON | 8192 | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| MT4VDDT1664HY-335F3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMT16HTF12864AY-80ED4Anlielectronics Тип | Micron Technology Inc. |
MODULE DDR2 SDRAM 1GB 240UDIMM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Socket | 240-UDIMM | - | 240 | DDR2 SDRAM | 16 | - | Bulk | 2002 | - | - | - | Obsolete | 1 (Unlimited) | 240 | - | - | 70°C | 0°C | - | - | DUAL | NO LEAD | - | - | 1.8V | 1mm | unknown | - | - | - | - | Not Qualified | 1.8V | - | - | COMMERCIAL | - | 1.9V | 1.7V | 1GB | - | 800MT/s | - | 400MHz | 40 ps | - | 128MX64 | 3-STATE | 64 | 0.112A | 8589934592 bit | 800MHz | - | COMMON | 8192 | - | 30mm | - | - | - | - | ROHS3 Compliant | Lead Free | ||
| MT16HTF12864AY-80ED4 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипMT8VDDT6464HDY-335J1Anlielectronics Тип | Micron Technology Inc. |
DRAM Module DDR SDRAM 512Mbyte 200SODIMM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Socket | 200-SODIMM | - | 200 | DDR SDRAM | 8 | - | - | 2003 | - | - | - | Obsolete | 1 (Unlimited) | 200 | - | - | 70°C | 0°C | - | - | DUAL | - | - | - | 2.5V | 0.6mm | - | - | - | - | - | - | 2.5V | - | - | COMMERCIAL | - | 2.7V | 2.3V | 512MB | - | 333MT/s | - | 167MHz | - | 64b | 64MX64 | 3-STATE | 64 | 0.04A | 4294967296 bit | 333MHz | 0.7 ns | COMMON | - | - | - | - | - | - | No | ROHS3 Compliant | - | ||
| MT8VDDT6464HDY-335J1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипMT36KSF2G72PZ-1G4D1Anlielectronics Тип | Micron Technology Inc. |
MODULE DDR3L SDRAM 16GB 240RDIMM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | 240-RDIMM | - | 240 | DDR3L SDRAM | - | - | - | 2013 | - | - | - | Obsolete | 3 (168 Hours) | - | - | - | 70°C | 0°C | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 1.35V | - | - | - | - | - | - | 16GB | - | 1333MT/s | - | - | - | 72b | - | - | - | - | - | 1.333GHz | - | - | - | - | - | - | - | - | No | ROHS3 Compliant | - | ||
| MT36KSF2G72PZ-1G4D1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипMT18KSF1G72PDZ-1G4E1Anlielectronics Тип | Micron Technology Inc. |
DRAM Module DDR3L SDRAM 8Gbyte 240RDIMM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Socket | 240-RDIMM | - | 240 | DDR3L SDRAM | 18 | - | - | 2015 | - | - | - | Obsolete | 3 (168 Hours) | 240 | EAR99 | - | 70°C | 0°C | AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V SUPPLY; WD-MAX | 8542.32.00.36 | DUAL | NO LEAD | - | 1 | 1.35V | - | unknown | - | - | - | - | - | 1.35V | - | - | COMMERCIAL | - | 1.45V | 1.283V | 8GB | 1 | 1333MT/s | SYNCHRONOUS | - | - | 72b | 1GX72 | - | 72 | - | 77309411328 bit | 1.333GHz | - | - | - | DUAL BANK PAGE BURST | - | 30.5mm | 133.35mm | - | - | ROHS3 Compliant | - | ||
| MT18KSF1G72PDZ-1G4E1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипMT18KSF1G72PZ-1G4E1Anlielectronics Тип | Micron Technology Inc. |
MODULE DDR3L SDRAM 8GB 240RDIMM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | 240-RDIMM | NO | 240 | DDR3L SDRAM | - | - | - | 2015 | - | - | - | Obsolete | 3 (168 Hours) | 240 | EAR99 | - | 70°C | 0°C | AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V SUPPLY; WD-MAX | 8542.32.00.36 | DUAL | - | - | 1 | 1.35V | 1mm | - | - | - | - | - | - | 1.35V | 1.45V | - | COMMERCIAL | 1.283V | - | - | 8GB | 1 | 1333MT/s | - | - | - | 72b | 1GX72 | - | 72 | - | 77309411328 bit | 1.333GHz | - | - | - | SINGLE BANK PAGE BURST | - | 30.5mm | 133.35mm | - | No | ROHS3 Compliant | - | ||
| MT18KSF1G72PZ-1G4E1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипMT18JSF51272PKZ-1G4K1Anlielectronics Тип | Micron Technology Inc. |
DRAM Module DDR3 SDRAM 4Gbyte 244RDIMM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | 244-MiniRDIMM | NO | 244 | DDR3 SDRAM | - | - | - | 2013 | - | - | - | Obsolete | 3 (168 Hours) | 240 | - | - | 70°C | 0°C | AUTO/SELF REFRESH; WD-MAX | - | DUAL | - | - | 1 | 1.5V | - | - | - | - | - | R-XDMA-N240 | - | 1.5V | 1.575V | - | COMMERCIAL | 1.425V | - | - | 4GB | 1 | 1333MT/s | - | - | - | 72b | 512MX72 | - | 72 | - | 38654705664 bit | 1.333GHz | - | - | - | DUAL BANK PAGE BURST | - | 30.15mm | 82mm | - | No | ROHS3 Compliant | - | ||
| MT18JSF51272PKZ-1G4K1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипMTA18ADF2G72PDZ-2G3B1Anlielectronics Тип | Micron Technology Inc. |
MODULE DDR4 SDRAM 16GB 288RDIMM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | 288-RDIMM | NO | 288 | DDR4 SDRAM | - | 85°C | - | 2017 | - | - | - | Active | 3 (168 Hours) | 288 | - | - | - | - | AUTO/SELF REFRESH; WD-MAX | - | DUAL | NO LEAD | - | 1 | 1.2V | - | - | - | - | - | - | - | - | 1.26V | - | OTHER | 1.14V | - | - | 16GB | 1 | 2400MT/s | SYNCHRONOUS | - | - | - | 2GX72 | - | 72 | - | 154618822656 bit | - | - | - | - | DUAL BANK PAGE BURST | - | 18.9mm | 133.35mm | 3.9mm | - | ROHS3 Compliant | - | ||
| MTA18ADF2G72PDZ-2G3B1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMT9VDDT6472HY-335F2Anlielectronics Тип | Micron Technology Inc. |
MODULE DDR SDRAM 512MB 200SODIMM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Socket | 200-SODIMM | - | 200 | DDR SDRAM | 9 | - | Bulk | 2002 | - | e4 | yes | Obsolete | 1 (Unlimited) | 200 | - | GOLD | 70°C | 0°C | AUTO/SELF REFRESH | 8542.32.00.36 | ZIG-ZAG | - | 260 | 1 | 2.5V | 0.6mm | - | - | 30 | 200 | - | - | 2.5V | - | - | COMMERCIAL | - | 2.7V | 2.3V | 512MB | 1 | 333MT/s | - | 166MHz | - | - | 64MX72 | 3-STATE | 72 | 0.045A | 4831838208 bit | 333MHz | 0.7 ns | COMMON | - | SINGLE BANK PAGE BURST | 31.8mm | - | 67.6mm | 31.75mm | No | ROHS3 Compliant | Lead Free | ||
| MT9VDDT6472HY-335F2 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMT16LSDF6464HG-13ED2Anlielectronics Тип | Micron Technology Inc. |
MODULE SDRAM 512MB 144SODIMM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | 144-SODIMM | NO | 144 | SDRAM | - | 70°C | Bulk | 2002 | - | - | - | Discontinued | 1 (Unlimited) | 144 | - | - | - | - | - | - | DUAL | NO LEAD | - | - | 3.3V | 0.8mm | unknown | 133MHz | - | - | - | Not Qualified | - | - | 3.3V | COMMERCIAL | - | - | - | 512MB | - | - | - | - | - | - | 64MX64 | 3-STATE | 64 | 0.032A | 4294967296 bit | - | 5.4 ns | COMMON | 8192 | - | 31.8mm | - | - | - | - | Non-RoHS Compliant | Contains Lead | ||
| MT16LSDF6464HG-13ED2 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMT5VDDT1672HG-335F3Anlielectronics Тип | Micron Technology Inc. |
MODULE DDR SDRAM 128MB 200SODIMM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | 200-SODIMM | NO | 200 | DDR SDRAM | - | - | Bulk | 2005 | - | e0 | no | Discontinued | 1 (Unlimited) | 200 | EAR99 | TIN LEAD | 70°C | 0°C | AUTO/SELF REFRESH | 8542.32.00.36 | ZIG-ZAG | - | 235 | 1 | 2.5V | 0.6mm | - | - | 30 | 200 | - | - | 2.5V | 2.7V | - | COMMERCIAL | 2.3V | - | - | 128MB | 1 | 333MT/s | - | 167MHz | - | 72b | 16MX72 | 3-STATE | 72 | 0.02A | 1207959552 bit | 333MHz | 0.9 ns | COMMON | 8192 | FOUR BANK PAGE BURST | 31.8mm | - | - | - | No | Non-RoHS Compliant | Contains Lead | ||
| MT5VDDT1672HG-335F3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMT8HTF6464HY-53EB3Anlielectronics Тип | Micron Technology Inc. |
MODUL DDR2 SDRAM 512MB 200SODIMM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Socket | 200-SODIMM | - | 200 | DDR2 SDRAM | 8 | - | Bulk | 2004 | - | - | - | Obsolete | 1 (Unlimited) | - | - | - | 85°C | 0°C | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 1.8V | - | - | - | - | 1.9V | 1.7V | 512MB | - | 533MT/s | - | - | - | - | - | - | - | - | - | 533MHz | - | - | - | - | 30mm | - | - | - | - | ROHS3 Compliant | Lead Free | ||
| MT8HTF6464HY-53EB3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMT8VDDT1664AG-335DBAnlielectronics Тип | Micron Technology Inc. |
MODULE DDR SDRAM 128MB 184UDIMM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | 184-UDIMM | - | 184 | DDR SDRAM | - | - | Bulk | 2002 | - | - | - | Obsolete | 1 (Unlimited) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 128MB | - | 333MT/s | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 31.8mm | - | - | - | - | Non-RoHS Compliant | Contains Lead | ||
| MT8VDDT1664AG-335DB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMTEDFAE008SCA-1P2ITAnlielectronics Тип | Micron Technology Inc. |
MOD FLASH NAND SLC 8GB VBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | - | Module | - | - | FLASH - NAND (SLC) | - | - | - | 2017 | eU500 | - | - | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 8GB | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| MTEDFAE008SCA-1P2IT | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMT9KBF51272AKZ-1G4E2Anlielectronics Тип | Micron Technology Inc. |
DRAM Module DDR3L SDRAM 4Gbyte 244VLP Mini-UDIMM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | 244-MiniUDIMM | - | 244 | DDR3L SDRAM | - | - | - | 2013 | - | - | - | Obsolete | 3 (168 Hours) | - | - | - | 70°C | 0°C | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 1.35V | - | - | - | - | - | - | 4GB | - | 1333MT/s | - | - | - | 72b | - | - | - | - | - | 666.66MHz | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| MT9KBF51272AKZ-1G4E2 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMT16VDDF6464HY-40BK1Anlielectronics Тип | Micron Technology Inc. |
MODULE DDR SDRAM 512MB 200SODIMM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | 200-SODIMM | NO | 200 | DDR SDRAM | - | 70°C | - | 2005 | - | e3 | yes | Discontinued | 1 (Unlimited) | 200 | - | MATTE TIN | - | - | - | - | DUAL | NO LEAD | 225 | - | 2.6V | 0.6mm | - | - | NOT SPECIFIED | - | - | Not Qualified | - | - | 2.6V | COMMERCIAL | - | - | - | 512MB | - | 400MT/s | - | - | - | - | 64MX64 | 3-STATE | 64 | 0.064A | 4294967296 bit | - | 0.7 ns | COMMON | 8192 | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| MT16VDDF6464HY-40BK1 |
Индекс :
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