PDMB200B12C
Mult. :
Соответствующие детали

PDMB600E6
KYOCERA Corporation
Description: Insulated Gate Bipolar Transistor, 600A I(C), 600V V(BR)CES, N-Channel, MODULE-7

PBMB150E6
KYOCERA Corporation
Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel, MODULE-12

PDMB75E6
KYOCERA Corporation
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, MODULE-7

PDMB50B12
KYOCERA Corporation
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, MODULE-7

PDMB75B12
KYOCERA Corporation
Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, MODULE-7

PCHMB75B12
KYOCERA Corporation
Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, MODULE-5

PHMB600E6C
KYOCERA Corporation
Insulated Gate Bipolar Transistor, 600A I(C), 600V V(BR)CES, N-Channel, MODULE-4

PDMB200BS12C
KYOCERA Corporation
Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-7

PCHMB50B12
KYOCERA Corporation
Description: Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel,

PCHMB75B12A
KYOCERA Corporation
Description: Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, MODULE-5

PDMB300E6
KYOCERA Corporation
Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel, MODULE-7

PDMB200B12C2
KYOCERA Corporation
Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-7

PDMB300B12C
KYOCERA Corporation
Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-7

PBMB100E6
KYOCERA Corporation
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, MODULE-12

PBMB200B12
KYOCERA Corporation
Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-14

PRHMB50B12
KYOCERA Corporation
Description: Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, MODULE-5

PBMB75E6
KYOCERA Corporation
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, MODULE-12

PHMB400B12
KYOCERA Corporation
Description: Insulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES, N-Channel,

PHMB1200B12
KYOCERA Corporation
Insulated Gate Bipolar Transistor
Другие включают "PDMB2" Детали

PDMB200B12C
KYOCERA Corporation
Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-7

PDMB200BS12C
KYOCERA Corporation
Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-7

PDMB200E6
KYOCERA Corporation
Description: Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel, MODULE-7

PDMB200B12C2
KYOCERA Corporation
Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-7