CIL21J4R7KNE

Samsung Semiconductor

-

CIGT201610LM1R0MNE

Samsung Electro-Mechanics

FIXED IND 1UH 2.4A 72MOHM SMD

CIGT201208EHR47MNE

Samsung Electro-Mechanics

FIXED IND 470NH 3.7A 35MOHM SMD

CIG2MWR47NNE

Samsung Semiconductor

-

CIG2MW1R5NNE

Samsung Semiconductor

-

CIGT252010LMR33MNE

Samsung Electro-Mechanics

FIXED IND 330NH 5A 22MOHM SMD

CIGT201610HM1R0MNE

Samsung Semiconductor

-

CIGT201610GM1R0MWE

Samsung Semiconductor

-

CIM05H121NC

Samsung Semiconductor

Ferrite Chip,

CIGT201610GMR47MWE

Samsung Semiconductor

-

CIGT252010EH1R0MNE

Samsung Electro-Mechanics

FIXED IND 1UH 4.1A 30MOHM SMD

CIGT201610EHR47MNE

Samsung Electro-Mechanics

FIXED IND 470NH 4.8A 22MOHM SMD

CIH10TR10JNC

Samsung Electro-Mechanics

Inductor High Frequency Chip Multi-Layer 100nH 5% 100MHz 12Q-Factor Ceramic 350mA 1Ohm DCR 0603 Paper T/R

CIH05T10NJNC

Samsung Electro-Mechanics

Inductor High Frequency Chip Multi-Layer 10nH 5% 100MHz 8Q-Factor Ceramic 300mA 420mOhm DCR 0402 Paper T/R

CIH10T1N0SNC

Samsung Electro-Mechanics

FIXED IND 1NH 800MA 50 MOHM SMD

CIGT252010LM2R2MNE

Samsung Electro-Mechanics

FIXED IND 2.2UH 2.1A 97MOHM SMD

CIGW201610GHR33MLE

Samsung Electro-Mechanics

FIXED IND 330NH 4A 23MOHM SMD

CIH10T15NJNC

Samsung Electro-Mechanics

Inductor High Frequency Chip Multi-Layer 15nH 5% 100MHz 12Q-Factor Ceramic 500mA 320mOhm DCR 0603 Paper T/R

CIG21L3R3MNE

Samsung Electro-Mechanics

Inductor Power Chip Shielded Multi-Layer 3.3uH 20% 1MHz Ferrite 800mA 220mOhm DCR 0805 Embossed T/R

CIGT201208EH1R0MNE

Samsung Electro-Mechanics

Power Inductor : LxW size(mm) 2012 Thickness0.8 Inductance (uH) 20%: 1

CIH10TR10JNC

Samsung Electro-Mechanics

Inductor High Frequency Chip Multi-Layer 100nH 5% 100MHz 12Q-Factor Ceramic 350mA 1Ohm DCR 0603 Paper T/R

CIH10T1N0SNC

Samsung Electro-Mechanics

FIXED IND 1NH 800MA 50 MOHM SMD

CIH10T15NJNC

Samsung Electro-Mechanics

Inductor High Frequency Chip Multi-Layer 15nH 5% 100MHz 12Q-Factor Ceramic 500mA 320mOhm DCR 0603 Paper T/R

CIH10T12NJNC

Samsung Electro-Mechanics

Inductor High Frequency Chip Multi-Layer 12nH 5% 100MHz 12Q-Factor Ceramic 600mA 280mOhm DCR 0603 Paper T/R

CIH10TR10KNC

Samsung Semiconductor

General Purpose Inductor, 0.1uH, 10%, Ceramic-Core, 0603

CIH10T5N6KNC

Samsung Electro-Mechanics

General Purpose Inductor, 0.0056uH, 10%, 1 Element, Ceramic-Core, SMD, 0603, CHIP, 0603, ROHS COMPLIANT

CIH10TR15KNC

Samsung Electro-Mechanics

Description: General Purpose Inductor, 0.15uH, 10%, 1 Element, Ceramic-Core, SMD, 0603, CHIP, 0603, ROHS COMPLIANT

CIH10T18NJNC

Samsung Electro-Mechanics

Inductor High Frequency Chip Multi-Layer 18nH 5% 100MHz 12Q-Factor Ceramic 500mA 350mOhm DCR 0603 Paper T/R

CIH10T47NJNC

Samsung Electro-Mechanics

Inductor High Frequency Chip Multi-Layer 47nH 5% 100MHz 12Q-Factor Ceramic 400mA 770mOhm DCR 0603 Paper T/R

CIH10T68NJNC

Samsung Electro-Mechanics

Inductor High Frequency Chip Multi-Layer 68nH 5% 100MHz 12Q-Factor Ceramic 350mA 850mOhm DCR 0603 Paper T/R