CLY2
Mult. :
Соответствующие детали

UJ3C120080K3S
Qorvo
Description: Power Field-Effect Transistor, 33A I(D), 1200V, 0.1ohm, 1-Element, N-Channel, Silicon Carbide, Junction Cascode FET, TO-247,

TGF2957
Qorvo
RF Power Field-Effect Transistor

FPD2250SOT89
Qorvo
RF Power Field-Effect Transistor, 1-Element, Silicon, N-Channel, High Electron Mobility FET, SOT-89, 3 PIN

TGF2023-01
Qorvo
Transistor

PD25025F
Qorvo
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,

SP2030
Qorvo
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

TGF2120
Qorvo
RF Small Signal Field-Effect Transistor,

QPD1035L
Qorvo
GaN FETs 30W, DC - 6GHz, Flanged

QPD1035
Qorvo
GaN FETs 30W, DC - 6GHz

UF4C120070B7S
Qorvo
1200V, Sic Fet

UJ3C065030K3S
Qorvo
TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS

FPD750SOT343E
Qorvo
Description: RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, LEAD FREE, PLASTIC PACKAGE-4

T1G3000532-SM
Qorvo
RF Power Field-Effect Transistor,

FPD3000
Qorvo
RF Power Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, High Electron Mobility FET, DIE

TGF2952
Qorvo
Description: RF Small Signal Field-Effect Transistor

TGF2953
Qorvo
RF Power Field-Effect Transistor

FPD1500SOT89
Qorvo
RF Power Field-Effect Transistor, 1-Element, Silicon, N-Channel, High Electron Mobility FET, SOT-89, 3 PIN

UJ4C075033L8S
Qorvo
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QPD2795
Qorvo
RF Power Field-Effect Transistor,