SGM50HF12A1TFD

Hangzhou Silan Microelectronics

IGBT Transistors / Modules ROHS

SGM75HF12A1TFD

Hangzhou Silan Microelectronics

IGBT Transistors / Modules ROHS

APT110GL100JN

Microsemi Corporation

110A, 1000V, N-CHANNEL IGBT, ISOTOP-4

SGT50T65FD1P7

Hangzhou Silan Microelectronics

TO-247-3L IGBT Transistors / Modules ROHS

APTGT200U170D4G

Microsemi Corporation

Insulated Gate Bipolar Transistor, 280A I(C), 1700V V(BR)CES, N-Channel, MODULE-4

APTGT75X120RTP3

Microsemi Corporation

Insulated Gate Bipolar Transistor, 105A I(C), 1200V V(BR)CES, N-Channel, MODULE-35

APT35GP120B2DF2

Microsemi Corporation

Insulated Gate Bipolar Transistor, 96A I(C), 1200V V(BR)CES, N-Channel

APTGF330SK60D3

Microsemi Corporation

Insulated Gate Bipolar Transistor, 460A I(C), 600V V(BR)CES, N-Channel, MODULE-7

APT35G50BN

Microsemi Corporation

TRANSISTOR,IGBT,N-CHAN,500V V(BR)CES,35A I(C),TO-247

APTGF125X60E3G

Microsemi Corporation

Insulated Gate Bipolar Transistor, 180A I(C), 600V V(BR)CES, N-Channel, MODULE-33

APTGF10X60RTP2G

Microsemi Corporation

Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, MODULE-24

APT15GT60BR

Microsemi Corporation

Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN

APT75GN60SG

Microsemi Corporation

Insulated Gate Bipolar Transistor

APTGT150X120E3G

Microsemi Corporation

Description: Insulated Gate Bipolar Transistor, 220A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, E3, 33 PIN

APT15GN120K

Microsemi Corporation

Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN

APTGF50X120P2G

Microsemi Corporation

Insulated Gate Bipolar Transistor, 72A I(C), 1200V V(BR)CES, N-Channel, MODULE-17

APT25GP90B

Microsemi Corporation

Insulated Gate Bipolar Transistor, 72A I(C), 900V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN

APTGF25X120E2G

Microsemi Corporation

Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, MODULE-17

APTGF50X60RTP3G

Microsemi Corporation

Description: Insulated Gate Bipolar Transistor, 35A I(C), 600V V(BR)CES, N-Channel, MODULE-35

APT35GP120B2DF2

Microsemi Corporation

Insulated Gate Bipolar Transistor, 96A I(C), 1200V V(BR)CES, N-Channel

APT35G60BN

Microsemi Corporation

Description: TRANSISTOR,IGBT,N-CHAN,600V V(BR)CES,35A I(C),TO-247

APT35GL60BN

Microsemi Corporation

35A, 600V, N-CHANNEL IGBT, TO-247

APT35G50BN

Microsemi Corporation

TRANSISTOR,IGBT,N-CHAN,500V V(BR)CES,35A I(C),TO-247