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  • SIEMS01461-1.pdf

BSM150GAL120DN2E3166

Siemens
Description: Insulated Gate Bipolar Transistor, 210A I(C), 1200V V(BR)CES, N-Channel
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Соответствующие детали

Siemens

BSM25GAL100D

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Description: Insulated Gate Bipolar Transistor, 25A I(C), 1000V V(BR)CES, N-Channel

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250 Ma 240 V N-channel Si Small Signal Mosfet TO-92

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BSM15GD120D2

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Description: Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel

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BSM35GD120D2

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Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel

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Другие включают "BSM15" Детали

Siemens

BSM150GAL120DN2E3166

Siemens

Description: Insulated Gate Bipolar Transistor, 210A I(C), 1200V V(BR)CES, N-Channel

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