MMBTH10

Samsung Semiconductor

Transistor

IRFR420A

Samsung Semiconductor

Power Field-Effect Transistor, 2.3A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3

SSP1N60A

Samsung Semiconductor

Power Field-Effect Transistor, 1A I(D), 600V, 12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

SSU1N60

Samsung Semiconductor

Power Field-Effect Transistor, 1A I(D), 600V, 12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3

SSH8N60

Samsung Semiconductor

Power Field-Effect Transistor, 8A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

SSH7N90

Samsung Semiconductor

Power Field-Effect Transistor, 7A I(D), 900V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

SI-B9V142570EU

Samsung Electronics Co. Ltd

-

SFW9644

Samsung Semiconductor

Power Field-Effect Transistor, 8.6A I(D), 250V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3

IRF9221

Samsung Semiconductor

Transistor

IRFW820TM

Samsung Semiconductor

-

SFS9530

Samsung Semiconductor

Power Field-Effect Transistor, 8A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN

SSH6N55

Samsung Semiconductor

Power Field-Effect Transistor, 6A I(D), 550V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

SSD2106

Samsung Semiconductor

Power Field-Effect Transistor, 2.5A I(D), 20V, 0.25ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8

IRF9222

Samsung Semiconductor

Transistor

SSH9N90A

Samsung Semiconductor

Power Field-Effect Transistor, 9A I(D), 900V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

SSH4N90AS

Samsung Semiconductor

Description: Power Field-Effect Transistor, 4.5A I(D), 900V, 3.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

SSH5N80A

Samsung Semiconductor

Power Field-Effect Transistor, 5A I(D), 800V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

SFR9110

Samsung Semiconductor

Description: Power Field-Effect Transistor, 2.8A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

IRFS9520

Samsung Semiconductor

Power Field-Effect Transistor, 6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN

SSD2102

Samsung Semiconductor

Power Field-Effect Transistor, 5.3A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8