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  • a99496ca2a671e22b1cf2ca8eb4a697a.pdf

C2M0160120D

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MOSFET N-CH 1200V 17.7A TO-247
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Соответствующие детали

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C3M0065090D

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MOSFET N-CH 900V 36A TO247-3

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C3M0030090K

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Description: Power Field-Effect Transistor, 73A I(D), 900V, 0.039ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247,

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C3M0065090J

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MOSFET N-CH 900V 35A D2PAK-7

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C3M0075120K

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Description: MOSFET N-CH SICFET 1.2KV TO247-4

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C3M0065100K

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1000V, 65 MOHM, G3 SIC MOSFET

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C3M0075120D

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Description: Power Field-Effect Transistor, 32A I(D), 1200V, 0.09ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247,

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C2M0080120D

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Description: MOSFET N-CH 1200V 31.6A TO247

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C2M0025120D

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Description: MOSFET N-CH 1200V 90A TO-247

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C3M0280090D

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MOSFET N-CH 900V 11.5A

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C2M0040120D

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Description: MOSFET N-CH 1200V 60A TO-247

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CGHV1F025S

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FET RF 100V 6GHZ 12DFN

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CGH25120F

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CGH25120F - 120W, 2300 - 2700MHz, GaN HEMT (Flange Package)

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CAS300M12BM2

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Mosfet Module, 1.2KV, Panel; Transistor Polarity-dual N Channel Rohs Compliant: Yes

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C3M0065100J

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Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode

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CAS300M17BM2

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Mosfet Transistor, Dual N Channel, 325 A, 1.7 Kv, 0.008 Ohm, 20 V, 2.3 V Rohs Compliant: Yes

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CAB450M12XM3

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1200 V; 450 A Silicon Carbide Conduction-Loss Optimized XM3 Half-Bridge Module

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CAB400M12XM3

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Mosfet Mod, Dual N-Ch, 1.2Kv, 395A Rohs Compliant: Yes |WOLFSPEED CAB400M12XM3

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CGHV14250F

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250-W; 1200 – 1400-MHz; GaN HEMT for L-Band Radar Systems

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C3M0280090J

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Description: MOSFET N-CH 900V 11A

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Другие включают "C2M01" Детали

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C2M0160120D

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MOSFET N-CH 1200V 17.7A TO-247

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