RD04HMS2
Mult. :
Соответствующие детали
MGF1923-01
Mitsubishi Electric
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET,
MGFC47B3538B
Mitsubishi Electric
RF Power Field-Effect Transistor, N-Channel
FS1UM-18A
Mitsubishi Electric
Description: Power Field-Effect Transistor, 1A I(D), 900V, 15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MGFC45V4450A
Mitsubishi Electric
Description: RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-38, 2 PIN
MGFC36V4450A-51
Mitsubishi Electric
Description: RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-8, 2 PIN
FS12KMA-4A
Mitsubishi Electric
Power Field-Effect Transistor, 12A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MGFS45V2527A
Mitsubishi Electric
Description: RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-51, 3 PIN
MGFC40V4450
Mitsubishi Electric
Description: RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-18, 2 PIN
RD06HHF1-101
Mitsubishi Electric
RF Power Field-Effect Transistor, 1-Element, High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3
FS10KM-9
Mitsubishi Electric
Power Field-Effect Transistor, 10A I(D), 450V, 0.73ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MGFX39V0717
Mitsubishi Electric
Description: RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-8, 2 PIN
RD01MUS1-101
Mitsubishi Electric
Description: RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-Oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3
FS50KMJ-03F
Mitsubishi Electric
Power Field-Effect Transistor, 50A I(D), 30V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220FN, 3 PIN
2SJ145
Mitsubishi Electric
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, SC-70, 3 PIN
FS10VS-14A
Mitsubishi Electric
Power Field-Effect Transistor, 10A I(D), 700V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RD00HVS1
Mitsubishi Electric
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3
MGFC39V6472A
Mitsubishi Electric
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-8, 2 PIN
RD02MUS1B
Mitsubishi Electric
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-10
RD35HUF2
Mitsubishi Electric
RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-8