SGFCF10S-DT1

SUMITOMO ELECTRIC Industries Ltd

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET, ROHS COMPLIANT, PLASTIC, Z2D, 6 PIN

FLM4450-18F

SUMITOMO ELECTRIC Device Innovations Inc

Description: RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IK, 2 PIN

FSX017LG

SUMITOMO ELECTRIC Device Innovations Inc

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE LG, 4 PIN

FLL177ME

SUMITOMO ELECTRIC Device Innovations Inc

RF Small Signal Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE ME, 2 PIN

FLK027XV

SUMITOMO ELECTRIC Industries Ltd

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-4

FHX35LG

SUMITOMO ELECTRIC Industries Ltd

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC, CASE LG, SMT, 4 PIN

FLM1213-4F

SUMITOMO ELECTRIC Device Innovations Inc

Description: RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IA, 2 PIN

EGNC105MK

SUMITOMO ELECTRIC Device Innovations Inc

Description: Transistor

FHX45X

SUMITOMO ELECTRIC Device Innovations Inc

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE

EGNB010MK

SUMITOMO ELECTRIC Industries Ltd

Description: RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL-CERAMIC PACKAGE-2

EGN28B200IV-R

SUMITOMO ELECTRIC Device Innovations Inc

Transistor

EGNB090MK

SUMITOMO ELECTRIC Industries Ltd

RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Nitride, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC, MK, 2 PIN

SGK5867-60A

SUMITOMO ELECTRIC Industries Ltd

Description: RF Power Field-Effect Transistor,

EGN29B100IV-R

SUMITOMO ELECTRIC Device Innovations Inc

Description: Transistor

SGN19C210I2D

SUMITOMO ELECTRIC Industries Ltd

Description: RF Power Field-Effect Transistor,

SGN21C105MK

SUMITOMO ELECTRIC Industries Ltd

RF Power Field-Effect Transistor,

EGN21C160I2D

SUMITOMO ELECTRIC Industries Ltd

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC, I2D, 2 PIN

SGN2933-150D-R

SUMITOMO ELECTRIC Industries Ltd

RF Power Field-Effect Transistor,

FLM3439-4F

SUMITOMO ELECTRIC Device Innovations Inc

Description: RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 2 PIN

ELM5964-4PST

SUMITOMO ELECTRIC Industries Ltd

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, PLASTIC, CASE I2C, 7 PIN