IRFR420A
Mult. :
Соответствующие детали
MMBTH10
Samsung Semiconductor
Transistor
SSH4N90AS
Samsung Semiconductor
Description: Power Field-Effect Transistor, 4.5A I(D), 900V, 3.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
IRFS9520
Samsung Semiconductor
Power Field-Effect Transistor, 6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN
SSH5N80A
Samsung Semiconductor
Power Field-Effect Transistor, 5A I(D), 800V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
SFR9110
Samsung Semiconductor
Description: Power Field-Effect Transistor, 2.8A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
SSR1N50
Samsung Semiconductor
Description: Power Field-Effect Transistor, 1.2A I(D), 500V, 8.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3
SSP1N60A
Samsung Semiconductor
Power Field-Effect Transistor, 1A I(D), 600V, 12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
SSD2106
Samsung Semiconductor
Power Field-Effect Transistor, 2.5A I(D), 20V, 0.25ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
SSH5N80
Samsung Semiconductor
Power Field-Effect Transistor, 5A I(D), 800V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
SFR9214
Samsung Semiconductor
Description: Power Field-Effect Transistor, 1.53A I(D), 250V, 4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3
STP15L01F
Samsung Electro-Mechanics
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MMBT5086
Samsung Semiconductor
Transistor
SSS2N90A
Samsung Semiconductor
Description: Power Field-Effect Transistor, 1.5A I(D), 900V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN
SSH6N55
Samsung Semiconductor
Power Field-Effect Transistor, 6A I(D), 550V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
IRF9222
Samsung Semiconductor
Transistor
SSH7N90
Samsung Semiconductor
Power Field-Effect Transistor, 7A I(D), 900V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
SFS9510
Samsung Semiconductor
Power Field-Effect Transistor, 2.5A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN
IRFP242
Samsung Semiconductor
Description: Power Field-Effect Transistor, 16A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
SSH10N80
Samsung Semiconductor
Power Field-Effect Transistor, 10A I(D), 800V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
SSH10N60
Samsung Semiconductor
Power Field-Effect Transistor, 10A I(D), 600V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN