BYI-1
Mult. :
Соответствующие детали
IRFZ48
Microsemi Corporation
Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-3
ARF463AP1
Microsemi Corporation
RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN
ARF461D
Microsemi Corporation
Description: Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN
BYI-1F
Microsemi Corporation
IC BYISTOR FOR PWR AMP 55GV
APTMC120HRM40CT3G
Microsemi Corporation
Phase leg 1200V 34mOhm 179nC Dual Common Emitter Power Module MOSFET
BYI-1T
Microsemi Corporation
IC BYISTOR FOR PWR AMP 55LU
APTMC120HR11CT3G
Microsemi Corporation
Phase leg 1200V 98mOhm 49nC Dual Common Emitter Power Module MOSFET