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  • MBRD835L
  • Material Declaration MBRD835LT4G
  • Qualification Assembly/Test Site 13/Mar/2014

MBRD835LT4G

ON Semiconductor
Diode; Schottky Barrier; Vr 35V; If 8A; Pkg D-PAK; Vf 0.51V; Tj 150C; Cs 75A; Ir 35mA
Есть складские запасы
Min. : 1
Mult. :
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