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2N6439 Технические параметры

Advanced  2N6439 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка Advanced
Package / Case 316-01
Emitter- Base Voltage VEBO 4 V
Pd - Power Dissipation 146 W
Transistor Polarity NPN
Maximum Operating Temperature + 200 C
DC Collector/Base Gain hfe Min 10
Unit Weight 0.836769 oz
Minimum Operating Temperature - 65 C
Factory Pack QuantityFactory Pack Quantity 1
Mounting Styles Screw Mount
Gain Bandwidth Product fT 400 MHz
Свойство продукта Значение свойства
Manufacturer Advanced Semiconductor, Inc.
Brand Advanced Semiconductor, Inc.
RoHS Details
Collector- Emitter Voltage VCEO Max 33 V
Packaging Tray
Type RF Bipolar Power
Subcategory Transistors
Technology Si
Operating Frequency 400 MHz
Product Type RF Bipolar Transistors
Transistor Type Bipolar Power
Product Category RF Bipolar Transistors
Просмотр сходства
2N6439 brand manufacturers: Advanced, Anli stock, 2N6439 reference price.Advanced. 2N6439 parameters, 2N6439 Datasheet PDF and pin diagram description download.You can use the 2N6439 Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find 2N6439 pin diagram and circuit diagram and usage method of function,2N6439 electronics tutorials.You can download from the Anli.