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AGR09045EF Технические параметры
Advanced AGR09045EF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - RF | |
| Марка | Advanced | |
| Surface Mount | YES | |
| Number of Terminals | 2Terminals | |
| Transistor Element Material | SILICON | |
| Vds - Drain-Source Breakdown Voltage | 65 V | |
| Vgs th - Gate-Source Threshold Voltage | 4.8 V | |
| Pd - Power Dissipation | 117 W | |
| Transistor Polarity | N-Channel | |
| Maximum Operating Temperature | + 200 C | |
| Vgs - Gate-Source Voltage | 15 V | |
| Minimum Operating Temperature | - 65 C | |
| Manufacturer | Advanced Semiconductor, Inc. | |
| Brand | Advanced Semiconductor, Inc. | |
| RoHS | Details | |
| Id - Continuous Drain Current | 4.25 A | |
| Package Description | FLANGE MOUNT, R-CDFM-F2 | |
| Package Style | FLANGE MOUNT | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Reflow Temperature-Max (s) | 30 | |
| Operating Temperature-Max | 200 °C | |
| Manufacturer Part Number | AGR09045EF | |
| Package Shape | RECTANGULAR | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | AVAGO TECHNOLOGIES INC | |
| Risk Rank | 5.25 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Drain Current-Max (ID) | 4.25 A | |
| Packaging | Tray | |
| JESD-609 Code | e0 | |
| ECCN Code | EAR99 | |
| Type | RF Power MOSFET | |
| Terminal Finish | TIN LEAD | |
| Additional Feature | HIGH RELIABILITY | |
| Subcategory | MOSFETs | |
| Technology | Si | |
| Terminal Position | DUAL | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | 225 | |
| Reach Compliance Code | compliant | |
| JESD-30 Code | R-CDFM-F2 | |
| Qualification Status | Not Qualified | |
| Operating Frequency | 895 MHz | |
| Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | SOURCE | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | N-CHANNEL | |
| Product Type | RF MOSFET Transistors | |
| DS Breakdown Voltage-Min | 65 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 125 W | |
| Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
| Product Category | RF MOSFET Transistors |
Индекс :
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