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AGR09070EF Технические параметры

Advanced  AGR09070EF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - RF
Марка Advanced
Surface Mount YES
Number of Terminals 2Terminals
Transistor Element Material SILICON
Factory Pack QuantityFactory Pack Quantity 10
Manufacturer Advanced Semiconductor, Inc.
Brand Advanced Semiconductor, Inc.
RoHS Details
Drain Current-Max (ID) 8.5 A
Risk Rank 5.31
Ihs Manufacturer BROADCOM LTD
Part Life Cycle Code Active
Number of Elements 1 Element
Package Shape RECTANGULAR
Manufacturer Part Number AGR09070EF
Operating Temperature-Max 200 °C
Reflow Temperature-Max (s) 30
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Style FLANGE MOUNT
Package Description FLANGE MOUNT, R-CDFM-F2
Packaging Tray
JESD-609 Code e0
Свойство продукта Значение свойства
ECCN Code EAR99
Terminal Finish TIN LEAD
Additional Feature HIGH RELIABILITY
Subcategory MOSFETs
Technology Si
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 225
Reach Compliance Code compliant
JESD-30 Code R-CDFM-F2
Qualification Status Not Qualified
Configuration SINGLE
Operating Mode ENHANCEMENT MODE
Case Connection SOURCE
Transistor Application AMPLIFIER
Polarity/Channel Type N-CHANNEL
Product Type RF MOSFET Transistors
Drain Current-Max (Abs) (ID) 8.5 A
DS Breakdown Voltage-Min 65 V
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 265 W
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
Product Category RF MOSFET Transistors
Просмотр сходства
AGR09070EF brand manufacturers: Advanced, Anli stock, AGR09070EF reference price.Advanced. AGR09070EF parameters, AGR09070EF Datasheet PDF and pin diagram description download.You can use the AGR09070EF Transistors - FETs, MOSFETs - RF, DSP Datesheet PDF, find AGR09070EF pin diagram and circuit diagram and usage method of function,AGR09070EF electronics tutorials.You can download from the Anli.