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AGR09090EF Технические параметры
Advanced AGR09090EF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - RF | |
| Марка | Advanced | |
| Mounting Type | Surface Mount, MLCC | |
| Package / Case | 1111 (2828 Metric) | |
| Surface Mount | YES | |
| Number of Terminals | 2Terminals | |
| Transistor Element Material | SILICON | |
| Package | Tape & Reel (TR);Cut Tape (CT);Digi-Reel®; | |
| Mfr | American Technical Ceramics | |
| Product Status | Active | |
| Voltage Rated | 300V | |
| Factory Pack QuantityFactory Pack Quantity | 10 | |
| Manufacturer | Advanced Semiconductor, Inc. | |
| Brand | Advanced Semiconductor, Inc. | |
| RoHS | Details | |
| Package Description | FLANGE MOUNT, R-CDFM-F2 | |
| Package Style | FLANGE MOUNT | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Reflow Temperature-Max (s) | 30 | |
| Operating Temperature-Max | 200 °C | |
| Manufacturer Part Number | AGR09090EF | |
| Package Shape | RECTANGULAR | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | BROADCOM LTD | |
| Risk Rank | 5.31 | |
| Drain Current-Max (ID) | 8.5 A | |
| Operating Temperature | -55°C ~ 125°C | |
| Series | Porcelain Superchip® ATC 100B | |
| Packaging | Tray | |
| Size / Dimension | 0.110 L x 0.110 W (2.79mm x 2.79mm) | |
| Tolerance | ±5% | |
| JESD-609 Code | e0 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| ECCN Code | EAR99 | |
| Temperature Coefficient | P90 | |
| Terminal Finish | TIN LEAD | |
| Applications | RF, Microwave, High Frequency, Bypass, Decoupling | |
| Additional Feature | HIGH RELIABILITY | |
| Capacitance | 180 pF | |
| Subcategory | MOSFETs | |
| Technology | Si | |
| Terminal Position | DUAL | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | 225 | |
| Reach Compliance Code | compliant | |
| JESD-30 Code | R-CDFM-F2 | |
| Qualification Status | Not Qualified | |
| Failure Rate | - | |
| Lead Spacing | - | |
| Configuration | SINGLE | |
| Operating Mode | ENHANCEMENT MODE | |
| Lead Style | - | |
| Case Connection | SOURCE | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | N-CHANNEL | |
| Product Type | RF MOSFET Transistors | |
| Drain Current-Max (Abs) (ID) | 8.5 A | |
| DS Breakdown Voltage-Min | 65 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 219 W | |
| Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
| Features | High Q, Low Loss, Low ESL | |
| Product Category | RF MOSFET Transistors | |
| Height Seated (Max) | - | |
| Thickness (Max) | 0.102 (2.59mm) | |
| Ratings | - |
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