Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
AGR09180EF Технические параметры
Advanced AGR09180EF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - RF | |
| Марка | Advanced | |
| Surface Mount | YES | |
| Number of Terminals | 4Terminals | |
| Transistor Element Material | SILICON | |
| Factory Pack QuantityFactory Pack Quantity | 10 | |
| Manufacturer | Advanced Semiconductor, Inc. | |
| Brand | Advanced Semiconductor, Inc. | |
| RoHS | Details | |
| Package Description | FLANGE MOUNT, R-CDFM-F4 | |
| Package Style | FLANGE MOUNT | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Reflow Temperature-Max (s) | 30 | |
| Operating Temperature-Max | 150 °C | |
| Manufacturer Part Number | AGR09180EF | |
| Package Shape | RECTANGULAR | |
| Number of Elements | 2 Elements | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | AVAGO TECHNOLOGIES INC | |
| Risk Rank | 5.25 | |
| Packaging | Tray | |
| JESD-609 Code | e0 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| ECCN Code | EAR99 | |
| Terminal Finish | TIN LEAD | |
| Additional Feature | HIGH RELIABILITY | |
| Subcategory | MOSFETs | |
| Technology | Si | |
| Terminal Position | DUAL | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | 225 | |
| Reach Compliance Code | compliant | |
| JESD-30 Code | R-CDFM-F4 | |
| Qualification Status | Not Qualified | |
| Configuration | COMMON SOURCE, 2 ELEMENTS | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | SOURCE | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | N-CHANNEL | |
| Product Type | RF MOSFET Transistors | |
| DS Breakdown Voltage-Min | 65 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 500 W | |
| Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
| Product Category | RF MOSFET Transistors |
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ