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AGR21090EF Технические параметры
Advanced AGR21090EF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - RF | |
| Марка | Advanced | |
| Package / Case | Axial | |
| Surface Mount | YES | |
| Supplier Device Package | Axial | |
| Number of Terminals | 2Terminals | |
| Transistor Element Material | SILICON | |
| RoHS | Details | |
| Brand | Advanced Semiconductor, Inc. | |
| Manufacturer | Advanced Semiconductor, Inc. | |
| Factory Pack QuantityFactory Pack Quantity | 10 | |
| Package Description | FLANGE MOUNT, R-CDFM-F2 | |
| Package Style | FLANGE MOUNT | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Reflow Temperature-Max (s) | 30 | |
| Operating Temperature-Max | 200 °C | |
| Manufacturer Part Number | AGR21090EF | |
| Package Shape | RECTANGULAR | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | AVAGO TECHNOLOGIES INC | |
| Risk Rank | 5.25 | |
| Operating Temperature | -65°C ~ 175°C | |
| Series | Military, MIL-PRF-55182/01, RNC55 | |
| Packaging | Bulk | |
| Size / Dimension | 0.094 Dia x 0.250 L (2.39mm x 6.35mm) | |
| Tolerance | ±0.5% | |
| JESD-609 Code | e0 | |
| Part Status | Active | |
| Number of Terminations | 2Terminations |
| Свойство продукта | Значение свойства | |
|---|---|---|
| ECCN Code | EAR99 | |
| Temperature Coefficient | ±25ppm/°C | |
| Resistance | 124 kOhms | |
| Terminal Finish | TIN LEAD | |
| Composition | Metal Film | |
| Power (Watts) | 0.125W, 1/8W | |
| Additional Feature | HIGH RELIABILITY | |
| Subcategory | MOSFETs | |
| Technology | Si | |
| Terminal Position | DUAL | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | 225 | |
| Reach Compliance Code | compliant | |
| JESD-30 Code | R-CDFM-F2 | |
| Qualification Status | Not Qualified | |
| Failure Rate | S (0.001%) | |
| Configuration | SINGLE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | SOURCE | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | N-CHANNEL | |
| Product Type | RF MOSFET Transistors | |
| DS Breakdown Voltage-Min | 65 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 250 W | |
| Highest Frequency Band | S BAND | |
| Features | Military, Moisture Resistant, Weldable | |
| Product Category | RF MOSFET Transistors | |
| Height Seated (Max) | -- |
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