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BLF861A Технические параметры
Advanced BLF861A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - RF | |
| Марка | Advanced | |
| Package / Case | Axial | |
| Supplier Device Package | Axial | |
| Unit Weight | 0.619058 oz | |
| Factory Pack QuantityFactory Pack Quantity | 1 | |
| Manufacturer | Advanced Semiconductor, Inc. | |
| Brand | Advanced Semiconductor, Inc. | |
| RoHS | Details | |
| Vds - Drain-Source Breakdown Voltage | 65 V | |
| Transistor Polarity | N-Channel | |
| Maximum Operating Temperature | + 200 C | |
| Minimum Operating Temperature | - 65 C | |
| Mounting Styles | Flange Mount | |
| Rds On - Drain-Source Resistance | 160 mOhms | |
| Id - Continuous Drain Current | 18 A | |
| Operating Temperature | -55°C ~ 250°C | |
| Series | Military, MIL-PRF-39007, RWR80S | |
| Packaging | Bulk |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Size / Dimension | 0.094 Dia x 0.406 L (2.39mm x 10.31mm) | |
| Tolerance | ±1% | |
| Part Status | Active | |
| Number of Terminations | 2Terminations | |
| Temperature Coefficient | ±20ppm/°C | |
| Type | RF Power MOSFET | |
| Resistance | 330 Ohms | |
| Composition | Wirewound | |
| Power (Watts) | 2W | |
| Subcategory | MOSFETs | |
| Technology | Si | |
| Operating Frequency | 860 MHz | |
| Failure Rate | R (0.01%) | |
| Output Power | 150 W | |
| Product Type | RF MOSFET Transistors | |
| Gain | 14.5 dB | |
| Features | Military, Moisture Resistant | |
| Product Category | RF MOSFET Transistors | |
| Height Seated (Max) | -- |
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